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1. 发明申请

US20040036103A1 Memory device and method of manufacturing the same 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：US20040036103A1
公开(公告)日：2004-02-26
申请号：US10223327
申请日：2002-08-20
申请人： Macronix International Co., Ltd.
发明人： Hsu-Shun Chen , Li-Hsin Chuang , Hsiang-Lan Long , Yi-Chou Chen
IPC分类号： H01L021/8242
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233
摘要： A method of fabricating a memory device that includes defining a semiconductor substrate of a first dopant type, providing a doped layer of a second dopant type over the substrate, providing a dielectric layer over the doped layer, forming a plug in the dielectric layer, doping the plug with a dopant of the second type substantially over the entire region of the plug, doping the plug having doped with the second dopant type with a dopant of the first type, and providing a memory cell over the plug.
摘要翻译：一种制造存储器件的方法，其包括限定第一掺杂剂类型的半导体衬底，在衬底上提供第二掺杂剂类型的掺杂层，在掺杂层上提供介电层，在介电层中形成插塞，掺杂所述插头具有基本上在所述插头的整个区域上的第二类型的掺杂剂，用具有所述第一类型的掺杂剂掺杂掺杂有所述第二掺杂剂的所述插塞，以及在所述插头上提供存储器单元。

2. 发明申请

US20040037106A1 Laser programmable electrically readable phase-change memory method and device 有权
标题翻译：激光可编程电可读相变存储器的方法和装置
公开(公告)号：US20040037106A1
公开(公告)日：2004-02-26
申请号：US10223975
申请日：2002-08-20
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Chih-Yuan Lu , Yi-Chou Chen
IPC分类号： G11C017/14
CPC分类号： G11C13/0004 , G11C13/04 , G11C16/18 , G11C2213/72
摘要： Roughly described, a phase-change memory such as a chalcogenide-based memory is programmed optically and read electrically. No complex electrical circuits are required for programming the cells. On the other hand, this memory can be read by electrical circuitry directly. The read out speed is much faster than for optical disks, and integrated circuit chips made this way are more compatible with other electrical circuits than are optical disks. Thus memories according to the invention can have simple, low power-consuming, electrical circuits, and do not require slow and power-hungry disk drives for reading. The invention therefore provides a unique low power, fast read/write memory with simple electrical circuits.
摘要翻译：粗略地描述，诸如基于硫族化物的存储器之类的相变存储器被光学地编程并且被电读取。编程电池不需要复杂的电路。另一方面，该存储器可以直接由电路读取。读出速度比光盘快得多，而采用这种方式制成的集成电路芯片与其他电路比光盘更为兼容。因此，根据本发明的存储器可以具有简单的，低功耗的电路，并且不需要用于读取的缓慢且耗电的磁盘驱动器。因此，本发明提供了具有简单电路的独特的低功率，快速读/写存储器。

3. 发明申请

US20040110094A1 Method and system for lithography using phase-change material 有权
标题翻译：使用相变材料的光刻方法和系统
公开(公告)号：US20040110094A1
公开(公告)日：2004-06-10
申请号：US10315003
申请日：2002-12-10
申请人： Macronix International Co., Ltd.
发明人： Yi-Chou Chen , Chih-Yuan Lu , Hsiang-Lan Lung , Li-Hsin Chuang
IPC分类号： H01L021/82 , G03C005/00
CPC分类号： H01L45/1213 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： Methods and systems are provided for forming an electrical interconnect layer between two layers of an integrated circuit. The interconnect layer is formed using a material having a first electrical conductivity corresponding to a first state and a second electrical conductivity corresponding to a second state, where the first electrical conductivity is different from the second electrical conductivity. An area of the material of the interconnect layer may be selected, for example, using a mask. Then energy may be applied to the selected area to change the electrical conductivity of the material in the selected area of the interconnect layer. Thus, the present invention may be used to implement optical memory devices which may be read by an electrical circuit.
摘要翻译：提供了用于在集成电路的两层之间形成电互连层的方法和系统。互连层使用具有对应于第一状态的第一电导率和对应于第二状态的第二电导率的材料形成，其中第一电导率不同于第二电导率。可以例如使用掩模来选择互连层的材料的区域。然后可以将能量施加到所选择的区域以改变在互连层的选定区域中的材料的导电性。因此，本发明可以用于实现可由电路读取的光学存储器件。

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