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1. 发明授权

US06291357B1 Method and apparatus for etching a substrate with reduced microloading 失效
标题翻译：减少微加载蚀刻基板的方法和装置
公开(公告)号：US06291357B1
公开(公告)日：2001-09-18
申请号：US09414329
申请日：1999-10-06
申请人： Luke Zhang , Ruiping Wang , Ida Ariani Adisaputro , Kwang-Soo Kim
发明人： Luke Zhang , Ruiping Wang , Ida Ariani Adisaputro , Kwang-Soo Kim
IPC分类号： H01L2100
CPC分类号： H01L21/67069
摘要： A substrate 20 is placed in a process zone 115 of a process chamber 110, process gas is introduced into the process zone 115, and an energized gas is formed in the process zone 115. First process conditions are set to form etch-passivating deposits onto a surface 22 of the substrate 20. Second process conditions are set to etch the surface 22 of the substrate 20. The etch-passivating deposits formed before the etching process improve etching uniformity and reduce etch-rate microloading.
摘要翻译：将衬底20放置在处理室110的处理区115中，将工艺气体引入处理区115中，并且在处理区115中形成通电的气体。首先设置工艺条件以形成蚀刻钝化沉积物设置衬底20的表面22.设定第二工艺条件以蚀刻衬底20的表面22.在蚀刻工艺之前形成的蚀刻钝化沉积改善了蚀刻均匀性并降低了蚀刻速率的微加载。

2. 发明授权

US06489248B2 Method and apparatus for etch passivating and etching a substrate 失效
标题翻译：蚀刻钝化和蚀刻衬底的方法和设备
公开(公告)号：US06489248B2
公开(公告)日：2002-12-03
申请号：US09938208
申请日：2001-08-23
申请人： Luke Zhang , Ruiping Wang , Ida Ariani Adisaputro , Kwang-Soo Kim
发明人： Luke Zhang , Ruiping Wang , Ida Ariani Adisaputro , Kwang-Soo Kim
IPC分类号： H01L2100
CPC分类号： H01L21/67069
摘要： A substrate having a patterned mask and exposed openings is provided in a process chamber having process electrodes. In a plasma ignition stage, a process gas is provided in the process chamber and is energized by maintaining the process electrodes at a plasma ignition bias power level. In an etch-passivating stage, an etch-passivating material is formed on at least portions of the substrate by maintaining the process electrodes at an etch-passivating bias power level. In an etching stage, the exposed openings on the substrate are etched by maintaining the process electrodes at an etching bias power level.
摘要翻译：具有图案化掩模和暴露开口的基板设置在具有工艺电极的处理室中。在等离子体点火阶段，处理气体被提供在处理室中，并且通过将处理电极保持在等离子体点火偏压功率水平而被通电。在蚀刻钝化阶段，通过将处理电极保持在蚀刻钝化偏压功率水平，在衬底的至少部分上形成蚀刻钝化材料。在蚀刻阶段，通过将处理电极保持在蚀刻偏压功率水平来蚀刻衬底上的暴露的开口。

3. 发明授权

US08890409B2 Microcavity and microchannel plasma device arrays in a single, unitary sheet 有权
标题翻译：微腔和微通道等离子体器件阵列在单一的单一片材中
公开(公告)号：US08890409B2
公开(公告)日：2014-11-18
申请号：US12991237
申请日：2009-05-14
申请人： J. Gary Eden , Sung-Jin Park , Taek-Lim Kim , Kwang-Soo Kim
发明人： J. Gary Eden , Sung-Jin Park , Taek-Lim Kim , Kwang-Soo Kim
IPC分类号： H01J17/49 , H01J9/26 , H01J9/32 , H05H1/24 , H01J61/86 , H01J11/36
CPC分类号： H05H1/24 , H01J11/36 , H01J61/86 , H05H1/2406 , H05H2001/2418
摘要： An array of microcavity plasma devices is formed in a unitary sheet of oxide with embedded microcavities or microchannels and encapsulated metal driving electrodes isolated by oxide from the microcavities or microchannels and arranged so as to generate sustain a plasma in the embedded microcavities or microchannels upon application of time-varying voltage when a plasma medium is contained in the microcavities or microchannels.
摘要翻译：微腔等离子体装置的阵列形成在具有嵌入的微腔或微通道的一体的氧化物片材中，并且被封装的金属驱动电极由氧化物从微腔或微通道分离，并被布置成在施加了微腔或微通道时在嵌入的微腔或微通道中产生维持等离子体当等离子体介质包含在微通道或微通道中时，具有时变电压。

4. 发明授权

US08404558B2 Method for making buried circumferential electrode microcavity plasma device arrays, and electrical interconnects 有权
标题翻译：用于制造埋置的圆周电极微腔等离子体器件阵列和电互连的方法
公开(公告)号：US08404558B2
公开(公告)日：2013-03-26
申请号：US13188712
申请日：2011-07-22
申请人： J. Gary Eden , Sung-Jin Park , Kwang-Soo Kim
发明人： J. Gary Eden , Sung-Jin Park , Kwang-Soo Kim
IPC分类号： H01L33/16 , H01J17/04 , H01J17/49
CPC分类号： H01J11/18 , G09F9/313
摘要： In a preferred method of formation embodiment, a metal foil or film is obtained or formed with micro-holes. The foil is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity in a plane(s) transverse to the microcavity axis, and can be electrically isolated or connected. Preferred embodiments provide inexpensive microplasma device electrode structures and a fabrication method for realizing microplasma arrays that are lightweight and scalable to large areas. Electrodes buried in metal oxide and complex patterns of electrodes can also be formed without reference to microplasma devices—that is, for general electrical circuitry.
摘要翻译：在优选的形成实施方案中，获得或形成有微孔的金属箔或膜。箔被阳极化以形成金属氧化物。自动形成一个或多个自图形金属电极并将其埋在通过阳极氧化处理产生的金属氧化物中。电极在横截于微腔轴的平面中围绕每个微腔的封闭圆周形成，并且可以电隔离或连接。优选实施例提供廉价的微型器件电极结构和用于实现轻量级并且可扩展到大面积的微等离子体阵列的制造方法。掩埋在金属氧化物中的电极和电极的复杂图案也可以形成，而不参考微等离子体装置，即用于一般的电路。

5. 发明授权

US07715632B2 Apparatus and method for recognizing an image 有权
标题翻译：用于识别图像的装置和方法
公开(公告)号：US07715632B2
公开(公告)日：2010-05-11
申请号：US11249092
申请日：2005-10-12
申请人： Sang-Cheol Park , Byoung-Chul Ko , Kwang-Soo Kim , Kyong-Ha Park
发明人： Sang-Cheol Park , Byoung-Chul Ko , Kwang-Soo Kim , Kyong-Ha Park
IPC分类号： G06K9/46 , G06K9/66 , G06K9/62
CPC分类号： G06K9/00248
摘要： Disclosed are an apparatus and a method for recognizing a specific subject from a still image or a moving image at a high speed. An object of the apparatus and the method is to reduce the amount of information required for image recognition. One feature vector value is extracted by using one feature template for dividing an image into a plurality of areas, and learning and image recognition is performed with respect to a subject to be recognized in the image using the extracted feature vector value.
摘要翻译：公开了一种用于从静止图像或运动图像高速识别特定被摄体的装置和方法。该装置和方法的目的是减少图像识别所需的信息量。通过使用一个特征模板将图像分割成多个区域来提取一个特征向量值，并且使用所提取的特征向量值对于要在图像中识别的对象执行学习和图像识别。

6. 发明申请

US20090297931A1 JELLY-ROLL TYPE ELECTRODE ASSEMBLY AND SECONDARY BATTERY INCLUDING THE SAME 有权
标题翻译： JELLY-ROLL型电极组件及其二次电池
公开(公告)号：US20090297931A1
公开(公告)日：2009-12-03
申请号：US12536782
申请日：2009-08-06
申请人： Won-Seog Oh , Soon-Ki Woo , Kwang-Soo Kim , Chang-Seob Kim
发明人： Won-Seog Oh , Soon-Ki Woo , Kwang-Soo Kim , Chang-Seob Kim
IPC分类号： H01M6/10
CPC分类号： H01M10/0431 , H01M2/1673 , H01M2/1686 , H01M2/26 , H01M2/348 , H01M4/13 , H01M4/661 , H01M10/0525 , H01M10/0587 , H01M10/4235 , H01M2200/10 , Y10T29/49108 , Y10T29/49115
摘要： An electrode assembly including a first electrode strip having a first electrode collector coated with at least a first electrode active material, an exposed portion of the first electrode collector attached with a first electrode tab; a second electrode strip having a second electrode collector coated with at least a second electrode active material and is rolled together with the first electrode strip, an exposed portion of the second electrode collector is attached with a second electrode tab; and at least one inter-electrode strip separator is positioned between the first and second electrode strips, wherein at least one sheet of protective separator, which is extended from the inter-electrode strip separator, is further positioned on a side of the first electrode strip attached with the first electrode tab.
摘要翻译：一种电极组件，包括具有涂覆有至少第一电极活性材料的第一电极集电体的第一电极条，所述第一电极集电体的暴露部分附着有第一电极接线片; 第二电极带，具有涂覆有至少第二电极活性材料的第二电极集流体，并与第一电极带一起卷绕，第二电极集电体的暴露部分附着有第二电极片; 并且至少一个电极间带状分离器位于第一和第二电极条之间，其中从电极间隔离带延伸的至少一个保护隔离片进一步定位在第一电极条的一侧附有第一电极片。

7. 发明授权

US07375947B2 Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：使用偏置电源输出的晶圆电压测量对ESC电压进行反馈控制的方法
公开(公告)号：US07375947B2
公开(公告)日：2008-05-20
申请号：US11672362
申请日：2007-02-07
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/283 , B23B31/28
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量确定晶片电压，并且该晶片电压用于精确地控制DC晶片钳位电压。

8. 发明授权

US07359177B2 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：具有E.S.C.反馈控制的双偏压等离子体反应器电压使用晶圆电压测量在偏置电源输出
公开(公告)号：US07359177B2
公开(公告)日：2008-04-15
申请号：US11127036
申请日：2005-05-10
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/683 , H01T23/00 , G01L21/30 , G01R31/00 , H01J7/24 , H05B31/26 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.
摘要翻译：等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和测量电压和测量电流的第二频率分量分别乘以第三和第四系数。处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压并乘以所选系数。

9. 发明申请

US20080055114A1 APPARATUS AND METHOD FOR GENERATING DRIVER ASSISTANCE INFORMATION OF TRAVELING VEHICLE 有权
标题翻译：用于生成行驶车辆驾驶员辅助信息的装置和方法
公开(公告)号：US20080055114A1
公开(公告)日：2008-03-06
申请号：US11774253
申请日：2007-07-06
申请人： Kwang-Soo Kim , Se-Young Oh , Jin-Won Kim , Sang-Cheol Park , Sam-Yong Kim , Young-Woo Ryu , Jeong-Gwan Kang
发明人： Kwang-Soo Kim , Se-Young Oh , Jin-Won Kim , Sang-Cheol Park , Sam-Yong Kim , Young-Woo Ryu , Jeong-Gwan Kang
IPC分类号： G08G1/04
CPC分类号： G01S15/931 , B60R1/00 , B60R2300/30 , B60R2300/301 , B60R2300/602 , B60R2300/804 , B60W50/14 , B60W2420/403 , B60W2550/402 , G01S15/025 , G06K9/00791
摘要： A method for generating driver assistance information of a traveling vehicle. The method can restructure traveling environments into an image based on a sensor system capable of removing blind spots around a traveling vehicle, and a scheme capable of exactly detecting a lane and a vehicle, and give a collision warning when there is a possibility of collision. Further, the method integrates recognition results of front/rear vehicles based on a lane recognition method applicable to various road environments, including the shape, curvature and loss of a lane, improves the stability of lane recognition, and distinguishes a solid line from a dot line, so it is possible to provide a driver with the subdivided degrees of danger. In addition, when a vehicle deviates from a lane, a voice warning may be output and the position of the vehicle for a road is restructured as an image.
摘要翻译：一种用于产生行驶车辆的驾驶员辅助信息的方法。该方法可以基于能够去除行驶车辆周围的盲点的传感器系统，以及能够精确地检测车道和车辆的方案，将移动环境重新构成图像，并且在存在碰撞的可能性时发出碰撞警告。此外，该方法基于适用于各种道路环境的车道识别方法（包括车道的形状，曲率和损失）来整合前后车辆的识别结果，提高车道识别的稳定性，并将实线与点区分开线，所以可以为司机提供细分的危险程度。此外，当车辆偏离车道时，可以输出声音警告，并且将道路车辆的位置重新构成为图像。

10. 发明授权

US07289661B2 Apparatus and method for inspecting a substrate 有权
标题翻译：用于检查基板的装置和方法
公开(公告)号：US07289661B2
公开(公告)日：2007-10-30
申请号：US10661633
申请日：2003-09-15
申请人： Chung-Sam Jun , Sun-Yong Choi , Kwang-Soo Kim , Joo-Woo Kim , Jeong-Hyun Choi , Dong-Jin Park
发明人： Chung-Sam Jun , Sun-Yong Choi , Kwang-Soo Kim , Joo-Woo Kim , Jeong-Hyun Choi , Dong-Jin Park
IPC分类号： G06K9/00
CPC分类号： H01L21/67253 , G01N21/9503 , G01N21/95607 , G01N2021/0162 , G01N2021/0187 , G01N2021/1736 , G01N2021/1772 , G01N2021/8411 , G01N2021/8896 , G01N2021/95615 , G01N2201/103 , G01N2201/1087
摘要： An automated and integrated substrate inspecting apparatus for performing an EBR/EEW inspection, a defect inspection of patterns and reticle error inspection of a substrate includes a first stage for supporting a substrate; a first image acquisition unit for acquiring a first image of a peripheral portion of the substrate supported by the first stage; a second stage for supporting the substrate; a second image acquisition unit for acquiring a second image of the substrate supported by the second stage; a transfer robot for transferring the substrate between the first stage and the second stage; and a data processing unit, connected to the first image acquisition unit and the second image acquisition unit, for inspecting results of an edge bead removal process and an edge exposure process performed on the substrate using the first image, and for inspecting for defects of patterns formed on the substrate using the second image.
摘要翻译：用于执行EBR / EEW检查的自动化和一体化的基板检查装置，对基板的图案和掩模版错误检查的缺陷检查包括用于支撑基板的第一阶段; 第一图像获取单元，用于获取由所述第一平台支撑的所述基板的周边部分的第一图像; 用于支撑衬底的第二阶段; 第二图像获取单元，用于获取由第二平台支撑的基板的第二图像; 用于在第一阶段和第二阶段之间转移衬底的传送机器人; 以及数据处理单元，连接到第一图像获取单元和第二图像获取单元，用于检查使用第一图像在基板上执行的边缘珠去除处理和边缘曝光处理的结果，并且用于检查图案的缺陷使用第二图像在基板上形成。

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