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1. 发明授权

US08264662B2 In-line particle detection for immersion lithography 有权
标题翻译：浸没光刻的在线粒子检测
公开(公告)号：US08264662B2
公开(公告)日：2012-09-11
申请号：US11764573
申请日：2007-06-18
申请人： Li-Jui Chen , Tsai-Sheng Gau , Chi-Kang Peng
发明人： Li-Jui Chen , Tsai-Sheng Gau , Chi-Kang Peng
IPC分类号： G03B27/52 , G03B27/58 , G03B27/32 , G03B27/42
CPC分类号： G03B27/42 , G03F7/70341 , G03F7/7085 , G03F7/70908
摘要： An immersion lithography system, comprising a lens unit configured to project a pattern from an end thereof and onto a wafer, a hood unit configured to confine an immersion fluid to a region of the wafer surrounding the end of the lens unit, a wafer stage configured to position the wafer proximate the end of the lens unit, and at least one of an image capturing apparatus and a scattering light detection apparatus, wherein the image capturing apparatus is coupled to the wafer stage and is configured to capture an image of a surface of the hood unit proximate the wafer stage, and wherein the scattering light detection apparatus is proximate the end of the lens unit and the hood unit and is configured to detect particles on a surface of the wafer stage.
摘要翻译：一种浸没光刻系统，包括被配置为将图案从其端部突出到晶片上的透镜单元，被配置为将浸没流体限制在围绕透镜单元的端部的晶片的区域的罩单元，被配置为将晶片定位在透镜单元的端部附近，以及图像捕获设备和散射光检测设备中的至少一个，其中图像捕获设备耦合到晶片台，并且被配置为捕获图像的表面的图像所述罩单元靠近所述晶片台，并且其中所述散射光检测装置靠近所述透镜单元和所述罩单元的端部，并且被配置为检测所述晶片台的表面上的颗粒。

2. 发明申请

US20080309892A1 IN-LINE PARTICLE DETECTION FOR IMMERSION LITHOGRAPHY 有权
标题翻译：在线颗粒检测用于浸没层析
公开(公告)号：US20080309892A1
公开(公告)日：2008-12-18
申请号：US11764573
申请日：2007-06-18
申请人： Li-Jui Chen , Tsai-Sheng Gau , Chi-Kang Peng
发明人： Li-Jui Chen , Tsai-Sheng Gau , Chi-Kang Peng
IPC分类号： G03B27/42 , G01N21/00
CPC分类号： G03B27/42 , G03F7/70341 , G03F7/7085 , G03F7/70908
摘要： An immersion lithography system, comprising a lens unit configured to project a pattern from an end thereof and onto a wafer, a hood unit configured to confine an immersion fluid to a region of the wafer surrounding the end of the lens unit, a wafer stage configured to position the wafer proximate the end of the lens unit, and at least one of an image capturing apparatus and a scattering light detection apparatus, wherein the image capturing apparatus is coupled to the wafer stage and is configured to capture an image of a surface of the hood unit proximate the wafer stage, and wherein the scattering light detection apparatus is proximate the end of the lens unit and the hood unit and is configured to detect particles on a surface of the wafer stage.
摘要翻译：一种浸没光刻系统，包括被配置为将图案从其端部突出到晶片上的透镜单元，被配置为将浸没流体限制在围绕透镜单元的端部的晶片的区域的罩单元，被配置为将晶片定位在透镜单元的端部附近，以及图像捕获设备和散射光检测设备中的至少一个，其中图像捕获设备耦合到晶片台，并且被配置为捕获图像的表面的图像所述罩单元靠近所述晶片台，并且其中所述散射光检测装置靠近所述透镜单元和所述罩单元的端部，并且被配置为检测所述晶片台的表面上的颗粒。

3. 发明申请

US20050086629A1 Method of defining forbidden pitches for a lithography exposure tool 失效
公开(公告)号：US20050086629A1
公开(公告)日：2005-04-21
申请号：US10688500
申请日：2003-10-17
申请人： Jaw-Jung Shin , Chun-Kuang Chen , Tsai-Sheng Gau , Burn-Jeng Lin , Li-Chun Tien , Mi-Chang Chang , Yu-Jun Chou , Jan-Wen You , King-Chang Shu , Li-Jui Chen
发明人： Jaw-Jung Shin , Chun-Kuang Chen , Tsai-Sheng Gau , Burn-Jeng Lin , Li-Chun Tien , Mi-Chang Chang , Yu-Jun Chou , Jan-Wen You , King-Chang Shu , Li-Jui Chen
IPC分类号： G03F1/14 , G03F7/20 , G06F17/50
CPC分类号： G03F7/70641 , G03F1/44 , G03F7/70425 , G03F7/70433 , G03F7/705
摘要： A method of identifying and defining forbidden pitches or forbidden pitch ranges for a lithographic exposure tool under a given set of exposure conditions is provided. In the method, a computer simulation is performed, and its results are compared to frequently used pitches to see if such frequently used pitches may yield depth-of-focus (DOF) values greater than the focus budget for the exposure tool. If so, a verification test is performed by using a test mask and actually exposing a surface with the same pattern pitches simulated. From this, actual DOF values are obtained and compared to the focus budget of the exposure tool. Any pitches having a DOF value greater than the focus budget are designated as forbidden pitches. This forbidden pitch information may be integrated into a design rule to restrict the use of such forbidden pitches under the given exposure conditions where they are likely to arise.

4. 发明授权

US07675604B2 Hood for immersion lithography 有权
标题翻译：用于浸没光刻的罩
公开(公告)号：US07675604B2
公开(公告)日：2010-03-09
申请号：US11427434
申请日：2006-06-29
申请人： Li-Jui Chen , Tzung-Chi Fu , Ching-Yu Chang , Fu-Jye Liang , Lin-Hung Shiu , Chun-Kuang Chen , Tsai-Sheng Gau
发明人： Li-Jui Chen , Tzung-Chi Fu , Ching-Yu Chang , Fu-Jye Liang , Lin-Hung Shiu , Chun-Kuang Chen , Tsai-Sheng Gau
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G03F7/70341
摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least two of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.
摘要翻译：光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 流体保持模块，被配置为将流体保持在所述成像透镜模块和所述基板载台上的基板之间的空间中; 以及配置在所述流体保持模块中且与所述空间相邻的加热元件。所述加热元件包括以下至少两个：对所述流体不溶的密封剂，用于密封所述流体保持模块中的所述加热元件; 密封开口，其构造在流体保持模块的顶部和侧部之一中，用于密封流体保持模块中的加热元件; 和/或配置有加热元件的不均匀的温度补偿装置。

5. 发明授权

US07135259B2 Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control 有权
标题翻译：监测热板温度的散射方法，促进关键尺寸控制
公开(公告)号：US07135259B2
公开(公告)日：2006-11-14
申请号：US10447010
申请日：2003-05-28
申请人： Li-Jui Chen , Chih-Ming Ke , Bang-Ching Ho , Jen-Chieh Shih , Tsai-Sheng Gau
发明人： Li-Jui Chen , Chih-Ming Ke , Bang-Ching Ho , Jen-Chieh Shih , Tsai-Sheng Gau
IPC分类号： H01L21/66
CPC分类号： G01K11/12 , G01K11/00 , G01K11/125 , G03F7/38
摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.
摘要翻译：在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。

6. 发明授权

US07751025B2 Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control 失效
标题翻译：监测热板温度的散射方法，促进关键尺寸控制
公开(公告)号：US07751025B2
公开(公告)日：2010-07-06
申请号：US11549306
申请日：2006-10-13
申请人： Li-Jui Chen , Chih-Ming Ke , Bang-Ching Ho , Jen-Chieh Shih , Tsai-Sheng Gau
发明人： Li-Jui Chen , Chih-Ming Ke , Bang-Ching Ho , Jen-Chieh Shih , Tsai-Sheng Gau
IPC分类号： G03B27/32 , G03D5/00 , B05C11/00
CPC分类号： G01K11/12 , G01K11/00 , G01K11/125 , G03F7/38
摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.
摘要翻译：在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。

7. 发明授权

US06973636B2 Method of defining forbidden pitches for a lithography exposure tool 失效
标题翻译：定义光刻曝光工具的禁止间距的方法
公开(公告)号：US06973636B2
公开(公告)日：2005-12-06
申请号：US10688500
申请日：2003-10-17
申请人： Jaw-Jung Shin , Chun-Kuang Chen , Tsai-Sheng Gau , Burn-Jeng Lin , Li-Chun Tien , Mi-Chang Chang , Yu-Jun Chou , Jan-Wen You , King-Chang Shu , Li-Jui Chen
发明人： Jaw-Jung Shin , Chun-Kuang Chen , Tsai-Sheng Gau , Burn-Jeng Lin , Li-Chun Tien , Mi-Chang Chang , Yu-Jun Chou , Jan-Wen You , King-Chang Shu , Li-Jui Chen
IPC分类号： G03F1/14 , G03F7/20 , G06F17/50
CPC分类号： G03F7/70641 , G03F1/44 , G03F7/70425 , G03F7/70433 , G03F7/705
摘要： A method of identifying and defining forbidden pitches or forbidden pitch ranges for a lithographic exposure tool under a given set of exposure conditions is provided. In the method, a computer simulation is performed, and its results are compared to frequently used pitches to see if such frequently used pitches may yield depth-of-focus (DOF) values greater than the focus budget for the exposure tool. If so, a verification test is performed by using a test mask and actually exposing a surface with the same pattern pitches simulated. From this, actual DOF values are obtained and compared to the focus budget of the exposure tool. Any pitches having a DOF value greater than the focus budget are designated as forbidden pitches. This forbidden pitch information may be integrated into a design rule to restrict the use of such forbidden pitches under the given exposure conditions where they are likely to arise.
摘要翻译：提供了一种在给定的曝光条件下识别和限定光刻曝光工具的禁止间距或禁止间距范围的方法。在该方法中，执行计算机模拟，并将其结果与经常使用的间距进行比较，以查看这种经常使用的间距是否可以产生比曝光工具的焦点预算大的焦点深度（DOF）值。如果是这样，则通过使用测试掩模执行验证测试，并且实际上暴露出模拟相同模式间距的表面。从此，获得实际的DOF值，并与曝光工具的焦点预算进行比较。 DOF值大于焦点预算的任何间距都被指定为禁止间距。该禁止音调信息可以被集成到设计规则中，以限制在可能出现的给定曝光条件下使用这种禁止间距。

8. 发明申请

US20070068453A1 Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control 失效
标题翻译：监测热板温度的散射方法，促进关键尺寸控制
公开(公告)号：US20070068453A1
公开(公告)日：2007-03-29
申请号：US11549306
申请日：2006-10-13
申请人： Li-Jui Chen , Chih-Ming Ke , Bang-Ching Ho , Jen-Chieh Shih , Tsai-Sheng Gau
发明人： Li-Jui Chen , Chih-Ming Ke , Bang-Ching Ho , Jen-Chieh Shih , Tsai-Sheng Gau
IPC分类号： B05C13/02 , B05C11/00
CPC分类号： G01K11/12 , G01K11/00 , G01K11/125 , G03F7/38
摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.
摘要翻译：在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。

9. 发明授权

US06744058B1 Geometric compensation method for charged particle beam irradiation 失效
标题翻译：带电粒子束照射的几何补偿方法
公开(公告)号：US06744058B1
公开(公告)日：2004-06-01
申请号：US10324964
申请日：2002-12-20
申请人： Tsai-Sheng Gau , Li-Jui Chen
发明人： Tsai-Sheng Gau , Li-Jui Chen
IPC分类号： H01J37302
CPC分类号： H01J37/3026 , G03B27/00 , H01J2237/2817 , H01J2237/3175
摘要： A charged particle beam method for irradiating an array of sub-regions within an areal region within a substrate with a series of shots of a charged particle beam provides that a sequencing of irradiation of the array of sub-regions is geometrically determined such as to minimize charged particle beam deflection when irradiating the series of sub-regions with the series of shots of the charged particle beam. Due to the geometric determination which provides the minimized charged particle beam deflection, the charged particle beam method has enhanced accuracy.
摘要翻译：一种带电粒子束方法，用于利用带电粒子束的一系列照射在衬底内的区域内的子区域阵列照射，使得对几个子区域的阵列的照射进行几何确定，以使当带电粒子束的一系列射击照射一系列子区域时，带电粒子束偏转。由于提供最小化带电粒子束偏转的几何确定，带电粒子束方法具有增强的精度。

10. 发明授权

US07338909B2 Micro-etching method to replicate alignment marks for semiconductor wafer photolithography 有权
标题翻译：用于复制半导体晶片光刻的对准标记的微蚀刻方法
公开(公告)号：US07338909B2
公开(公告)日：2008-03-04
申请号：US10872238
申请日：2004-06-18
申请人： Yu-Liang Lin , Henry Lo , Chung-Long Chang , Gorge Huang , Tony Lu , Gnesh Yeh , Candy Liang , Chun-Hsien Lin , Mei Sheng Zhou , Sunny Su , Ai-Sen Liu , Cheng-Lin Huang , Li-Jui Chen , Shih Che Wang
发明人： Yu-Liang Lin , Henry Lo , Chung-Long Chang , Gorge Huang , Tony Lu , Gnesh Yeh , Candy Liang , Chun-Hsien Lin , Mei Sheng Zhou , Sunny Su , Ai-Sen Liu , Cheng-Lin Huang , Li-Jui Chen , Shih Che Wang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L23/544 , H01L21/31111 , H01L21/67282 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.
摘要翻译：一种用于局部蚀刻衬底区域的方法和装置，该方法包括提供包含工艺表面的衬底; 在工艺表面上沉积材料层; 以及施加湿蚀刻剂以覆盖所述工艺表面的目标蚀刻部分，同时排除相邻的周围区域以选择性地蚀刻覆盖所述目标蚀刻部分的所述材料层。

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