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    • 2. 发明申请
    • Wafer probe for measuring plasma and surface characteristics in plasma processing environments
    • 用于测量等离子体处理环境中的等离子体和表面特性的晶圆探针
    • US20050034812A1
    • 2005-02-17
    • US10951162
    • 2004-09-27
    • Gregory RocheLeonard MahoneyDaniel CarterSteven Roberts
    • Gregory RocheLeonard MahoneyDaniel CarterSteven Roberts
    • H01J37/32H01L21/00C23F1/00
    • H01J37/32935H01L21/67253
    • There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
    • 本发明提供一种用于测量在晶片衬底上利用集成传感器的等离子体处理环境中的等离子体和表面特性的晶片探针。 安装在基板上的微处理器从集成传感器接收输入信号以处理,存储和发送数据。 无线通信收发器从微处理器接收数据并将等离子体处理系统外的信息传送到在等离子体处理期间收集数据的计算机。 集成传感器可以是双浮动朗缪尔探头,温度测量装置,谐振束气体传感器或霍尔磁传感器。 还提供了一种独立的电源,其利用由等离子体构成的地形学依赖的充电装置或利用堆叠的电容器的充电结构。
    • 3. 发明申请
    • Wafer probe for measuring plasma and surface characteristics in plasma processing environments
    • 用于测量等离子体处理环境中的等离子体和表面特性的晶圆探针
    • US20050011611A1
    • 2005-01-20
    • US10920138
    • 2004-08-17
    • Leonard MahoneyDaniel CarterSteven RobertsGregory Roche
    • Leonard MahoneyDaniel CarterSteven RobertsGregory Roche
    • H01J37/32H01L21/00C23F1/00
    • H01J37/32935H01L21/67253
    • There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, optical emission sensors, or other sensors of plasma or surface properties. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
    • 本发明提供一种用于测量在晶片衬底上利用集成传感器的等离子体处理环境中的等离子体和表面特性的晶片探针。 安装在基板上的微处理器从集成传感器接收输入信号以处理,存储和发送数据。 无线通信收发器从微处理器接收数据并将等离子体处理系统外的信息传送到在等离子体处理期间收集数据的计算机。 集成传感器可以是双浮动Langmuir探针,温度测量装置,谐振束气体传感器,光发射传感器或其他等离子体或表面性质的传感器。 还提供了一种独立的电源,其利用由等离子体构成的地形学依赖的充电装置或利用堆叠的电容器的充电结构。
    • 4. 发明申请
    • Diagnostic plasma measurement device having patterned sensors and features
    • 具有图案化传感器和特征的诊断等离子体测量装置
    • US20050284570A1
    • 2005-12-29
    • US10875954
    • 2004-06-24
    • Daniel DoranLeonard MahoneySteven RobertsGregory Roche
    • Daniel DoranLeonard MahoneySteven RobertsGregory Roche
    • C23F1/00C23F4/00G01L21/30H01J37/32
    • C23F4/00H01J37/32935
    • A diagnostic plasma measurement device is provided having sensors and features disposed using pattern transfer fabrication techniques. A measurement device comprises a primary substrate with sensors for measuring plasma or surface properties disposed by a stepped pattern transfer technique, such as step-and-repeat photolithography, about the surface of the probe. Sensor fields include sensors that measure physical and electrical properties of a plasma, as well as sensors that measure properties of the wafer surface. Fields or components for processing electronics, electrical interconnections, memory, photovoltaic power, and wireless communication are also provided. By utilizing pattern transfer fabrication techniques, the invention generally provides for reduced risks of contamination of a plasma processing environment and increased manufacturability and reliability of the completed sensor device.
    • 提供诊断等离子体测量装置,其具有使用图案转移制造技术设置的传感器和特征。 测量装置包括具有传感器的初级衬底,该传感器用于通过阶梯式图案转移技术(诸如分步重复光刻法)围绕探针的表面测量等离子体或表面性质。 传感器领域包括测量等离子体的物理和电学特性的传感器以及测量晶片表面性质的传感器。 还提供了用于处理电子,电互连,存储器,光伏电力和无线通信的领域或组件。 通过利用图案转移制造技术,本发明通常提供降低等离子体处理环境的污染风险,并提高完整的传感器装置的可制造性和可靠性。