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1. 发明申请

US20050034811A1 Sensor array for measuring plasma characteristics in plasma processing enviroments 有权
标题翻译：用于测量等离子体处理环境中的等离子体特性的传感器阵列
公开(公告)号：US20050034811A1
公开(公告)日：2005-02-17
申请号：US10640892
申请日：2003-08-14
申请人： Leonard Mahoney , Carl Almgren , Gregory Roche , William Saylor , William Sproul , Hendrik Walde
发明人： Leonard Mahoney , Carl Almgren , Gregory Roche , William Saylor , William Sproul , Hendrik Walde
IPC分类号： C23C16/00 , C23F1/00 , G01K11/00 , G01N27/60 , G01R27/26 , G01R27/28 , H01J20060101 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/306 , H01L21/461 , H05H1/00
CPC分类号： H01J37/32935 , H01J37/32954
摘要： A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.
摘要翻译：等离子体处理系统设置有用于等离子体性质的原位测量的诊断装置。诊断装置通常包括设置在等离子体处理室内的非侵入式传感器阵列，用于刺激传感器的电路，以及用于记录和传送用于监测或控制等离子体处理的传感器测量的装置。在一种形式中，传感器是动态脉冲双浮动Langmuir探头，其测量接近加工系统内的等离子体边界或边界的入射带电粒子电流和电子温度。等离子体测量可以用于监视处理等离子体的状态或者提供给用于控制等离子体处理的过程系统控制器。

2. 发明申请

US20050151544A1 Sensor array for measuring plasma characteristics in plasma processing environments 有权
公开(公告)号：US20050151544A1
公开(公告)日：2005-07-14
申请号：US11066520
申请日：2005-02-25
申请人： Leonard Mahoney , Carl Almgren , Gregory Roche , William Saylor , William Sproul , Hendrik Walde
发明人： Leonard Mahoney , Carl Almgren , Gregory Roche , William Saylor , William Sproul , Hendrik Walde
IPC分类号： C23C16/00 , C23F1/00 , G01K11/00 , G01N27/60 , G01R27/26 , G01R27/28 , H01J20060101 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/306 , H01L21/461 , H05H1/00
CPC分类号： H01J37/32935 , H01J37/32954
摘要： A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

3. 发明申请

US20050284570A1 Diagnostic plasma measurement device having patterned sensors and features 审中-公开
标题翻译：具有图案化传感器和特征的诊断等离子体测量装置
公开(公告)号：US20050284570A1
公开(公告)日：2005-12-29
申请号：US10875954
申请日：2004-06-24
申请人： Daniel Doran , Leonard Mahoney , Steven Roberts , Gregory Roche
发明人： Daniel Doran , Leonard Mahoney , Steven Roberts , Gregory Roche
IPC分类号： C23F1/00 , C23F4/00 , G01L21/30 , H01J37/32
CPC分类号： C23F4/00 , H01J37/32935
摘要： A diagnostic plasma measurement device is provided having sensors and features disposed using pattern transfer fabrication techniques. A measurement device comprises a primary substrate with sensors for measuring plasma or surface properties disposed by a stepped pattern transfer technique, such as step-and-repeat photolithography, about the surface of the probe. Sensor fields include sensors that measure physical and electrical properties of a plasma, as well as sensors that measure properties of the wafer surface. Fields or components for processing electronics, electrical interconnections, memory, photovoltaic power, and wireless communication are also provided. By utilizing pattern transfer fabrication techniques, the invention generally provides for reduced risks of contamination of a plasma processing environment and increased manufacturability and reliability of the completed sensor device.
摘要翻译：提供诊断等离子体测量装置，其具有使用图案转移制造技术设置的传感器和特征。测量装置包括具有传感器的初级衬底，该传感器用于通过阶梯式图案转移技术（诸如分步重复光刻法）围绕探针的表面测量等离子体或表面性质。传感器领域包括测量等离子体的物理和电学特性的传感器以及测量晶片表面性质的传感器。还提供了用于处理电子，电互连，存储器，光伏电力和无线通信的领域或组件。通过利用图案转移制造技术，本发明通常提供降低等离子体处理环境的污染风险，并提高完整的传感器装置的可制造性和可靠性。

4. 发明申请

US20050039852A1 Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments 审中-公开
标题翻译：用于测量等离子体处理环境中的等离子体和表面特性的晶圆探针
公开(公告)号：US20050039852A1
公开(公告)日：2005-02-24
申请号：US10951084
申请日：2004-09-27
申请人： Gregory Roche , Leonard Mahoney , Daniel Carter , Steven Roberts
发明人： Gregory Roche , Leonard Mahoney , Daniel Carter , Steven Roberts
IPC分类号： H01J37/32 , H01L21/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32935 , H01L21/67253
摘要： There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
摘要翻译：本发明提供一种用于测量在晶片衬底上利用集成传感器的等离子体处理环境中的等离子体和表面特性的晶片探针。安装在基板上的微处理器从集成传感器接收输入信号以处理，存储和发送数据。无线通信收发器从微处理器接收数据并将等离子体处理系统外的信息传送到在等离子体处理期间收集数据的计算机。集成传感器可以是双浮动朗缪尔探头，温度测量装置，谐振束气体传感器或霍尔磁传感器。还提供了一种独立的电源，其利用由等离子体构成的地形学依赖的充电装置或利用堆叠的电容器的充电结构。

5. 发明申请

US20050034812A1 Wafer probe for measuring plasma and surface characteristics in plasma processing environments 有权
标题翻译：用于测量等离子体处理环境中的等离子体和表面特性的晶圆探针
公开(公告)号：US20050034812A1
公开(公告)日：2005-02-17
申请号：US10951162
申请日：2004-09-27
申请人： Gregory Roche , Leonard Mahoney , Daniel Carter , Steven Roberts
发明人： Gregory Roche , Leonard Mahoney , Daniel Carter , Steven Roberts
IPC分类号： H01J37/32 , H01L21/00 , C23F1/00
CPC分类号： H01J37/32935 , H01L21/67253
摘要： There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
摘要翻译：本发明提供一种用于测量在晶片衬底上利用集成传感器的等离子体处理环境中的等离子体和表面特性的晶片探针。安装在基板上的微处理器从集成传感器接收输入信号以处理，存储和发送数据。无线通信收发器从微处理器接收数据并将等离子体处理系统外的信息传送到在等离子体处理期间收集数据的计算机。集成传感器可以是双浮动朗缪尔探头，温度测量装置，谐振束气体传感器或霍尔磁传感器。还提供了一种独立的电源，其利用由等离子体构成的地形学依赖的充电装置或利用堆叠的电容器的充电结构。

6. 发明申请

US20060171848A1 Diagnostic plasma sensors for endpoint and end-of-life detection 审中-公开
标题翻译：用于终点和寿命终止检测的诊断等离子体传感器
公开(公告)号：US20060171848A1
公开(公告)日：2006-08-03
申请号：US11047256
申请日：2005-01-31
申请人： Gregory Roche , Daniel Carter , David Madsen , Leonard Mahoney
发明人： Gregory Roche , Daniel Carter , David Madsen , Leonard Mahoney
IPC分类号： G01N27/00
CPC分类号： H01J37/32935 , G01R31/2642 , H01L22/34
摘要： A plasma measurement device comprises data sensors for sensing properties of the plasma environment together with diagnostic sensors for measuring properties related to the functional integrity of the measurement device. Events reported by the diagnostic sensors of the invention may be interpreted as failures of the measurement device, as warnings requiring operator attention or intervention, or alternatively may be employed as data in a predictive algorithm to estimate the remaining useful lifetime of the device. By providing an ability to detect events indicative of faults or failures in a plasma measurement device during use of the device, the invention provides enhanced certainty and confidence in the integrity of data collected by the plasma measurement device.
摘要翻译：等离子体测量装置包括用于感测等离子体环境的属性的数据传感器以及用于测量与测量装置的功能完整性相关的属性的诊断传感器。由本发明的诊断传感器报告的事件可被解释为测量装置的故障，作为需要操作者注意或干预的警告，或者替代地可以用作预测算法中的数据来估计设备的剩余使用寿命。通过提供在使用装置期间检测指示等离子体测量装置中的故障或故障的事件的能力，本发明提供了由等离子体测量装置收集的数据的完整性的增强的确定性和置信度。

7. 发明申请

US20050011611A1 Wafer probe for measuring plasma and surface characteristics in plasma processing environments 审中-公开
标题翻译：用于测量等离子体处理环境中的等离子体和表面特性的晶圆探针
公开(公告)号：US20050011611A1
公开(公告)日：2005-01-20
申请号：US10920138
申请日：2004-08-17
申请人： Leonard Mahoney , Daniel Carter , Steven Roberts , Gregory Roche
发明人： Leonard Mahoney , Daniel Carter , Steven Roberts , Gregory Roche
IPC分类号： H01J37/32 , H01L21/00 , C23F1/00
CPC分类号： H01J37/32935 , H01L21/67253
摘要： There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, optical emission sensors, or other sensors of plasma or surface properties. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
摘要翻译：本发明提供一种用于测量在晶片衬底上利用集成传感器的等离子体处理环境中的等离子体和表面特性的晶片探针。安装在基板上的微处理器从集成传感器接收输入信号以处理，存储和发送数据。无线通信收发器从微处理器接收数据并将等离子体处理系统外的信息传送到在等离子体处理期间收集数据的计算机。集成传感器可以是双浮动Langmuir探针，温度测量装置，谐振束气体传感器，光发射传感器或其他等离子体或表面性质的传感器。还提供了一种独立的电源，其利用由等离子体构成的地形学依赖的充电装置或利用堆叠的电容器的充电结构。

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