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    • 8. 发明授权
    • X-ray compton scatter imaging on volumetric CT systems
    • 体积CT系统的X射线压缩分散成像
    • US08995609B2
    • 2015-03-31
    • US13565337
    • 2012-08-02
    • Lei ZhuTianye Niu
    • Lei ZhuTianye Niu
    • A61B6/00G01N23/04G21K1/02A61B6/03
    • G01N23/046A61B6/032A61B6/4078A61B6/4233A61B6/483A61B6/508G01N2223/419G01N2223/612G21K1/02G21K2207/005
    • Briefly described, in an exemplary form, the present invention discloses a system, method and apparatus for X-ray Compton scatter imaging. In one exemplary embodiment, the present invention uses two detectors in a volumetric CT system. A first detector is positioned generally in-line with the angle of attack of the incoming energy, or, generally in-line of path x, where x is the path of the incoming energy. The first, or primary, detector detects various forms of radiation emanating from an object undergoing testing. In some embodiments, the present invention further comprises a Compton scattering system positioned generally normal to path x. In some embodiments, the Compton scattering subsystem comprises a second detector and a pin-hole collimator. The second detector detects Compton scattering energy from the object being tested.
    • 简要描述,在示例性形式中,本发明公开了一种用于X射线康普顿散射成像的系统,方法和装置。 在一个示例性实施例中,本发明在体积CT系统中使用两个检测器。 第一检测器通常与入射能量的迎角定位,或者通常沿着路径x排列,其中x是入射能量的路径。 第一或第一检测器检测从经历测试的对象发出的各种形式的辐射。 在一些实施例中,本发明还包括通常垂直于路径x定位的康普顿散射系统。 在一些实施例中,康普顿散射子系统包括第二检测器和针孔准直器。 第二个检测器检测来自被测物体的康普顿散射能量。
    • 10. 发明授权
    • Semiconductor optical device
    • 半导体光学器件
    • US08809906B2
    • 2014-08-19
    • US13613177
    • 2012-09-13
    • Lei ZhuShigeaki SekiguchiShinsuke TanakaKenichi Kawaguchi
    • Lei ZhuShigeaki SekiguchiShinsuke TanakaKenichi Kawaguchi
    • H01L31/102
    • G02B6/122G02B6/29352G02B2006/121G02F1/025H01L31/105
    • A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.
    • 半导体光学器件包括第一覆盖层,第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层,其中,光波导层包括第一半导体层,第二半导体层,设置在第一覆盖层 半导体层并且沿一个方向延伸,以及覆盖第二半导体层的顶表面的第三半导体层,并且其中第一半导体层包括设置在第二半导体层一侧的n型区域,p型区域 设置在第二半导体层的另一侧,以及设置在n型区域和p型区域之间的i型区域,并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。