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    • 1. 发明授权
    • Semiconductor optical device
    • 半导体光学器件
    • US08809906B2
    • 2014-08-19
    • US13613177
    • 2012-09-13
    • Lei ZhuShigeaki SekiguchiShinsuke TanakaKenichi Kawaguchi
    • Lei ZhuShigeaki SekiguchiShinsuke TanakaKenichi Kawaguchi
    • H01L31/102
    • G02B6/122G02B6/29352G02B2006/121G02F1/025H01L31/105
    • A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.
    • 半导体光学器件包括第一覆盖层,第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层,其中,光波导层包括第一半导体层,第二半导体层,设置在第一覆盖层 半导体层并且沿一个方向延伸,以及覆盖第二半导体层的顶表面的第三半导体层,并且其中第一半导体层包括设置在第二半导体层一侧的n型区域,p型区域 设置在第二半导体层的另一侧,以及设置在n型区域和p型区域之间的i型区域,并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。
    • 2. 发明申请
    • SEMICONDUCTOR OPTICAL DEVICE
    • 半导体光学器件
    • US20130126941A1
    • 2013-05-23
    • US13613177
    • 2012-09-13
    • Lei ZhuShigeaki SekiguchiShinsuke TanakaKenichi Kawaguchi
    • Lei ZhuShigeaki SekiguchiShinsuke TanakaKenichi Kawaguchi
    • H01L31/105
    • G02B6/122G02B6/29352G02B2006/121G02F1/025H01L31/105
    • A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.
    • 半导体光学器件包括第一覆盖层,第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层,其中,光波导层包括第一半导体层,第二半导体层,设置在第一覆盖层 半导体层并且沿一个方向延伸,以及覆盖第二半导体层的顶表面的第三半导体层,并且其中第一半导体层包括设置在第二半导体层一侧的n型区域,p型区域 设置在第二半导体层的另一侧,以及设置在n型区域和p型区域之间的i型区域,并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。