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1. 发明授权

EP2342951B1 LOWER ELECTRODE ASSEMBLY OF PLASMA PROCESSING CHAMBER 有权
公开(公告)号：EP2342951B1
公开(公告)日：2019-03-06
申请号：EP09829445.7
申请日：2009-10-29
申请人： Lam Research Corporation
发明人： AUGUSTINO, Jason , CHAU, Quan , GAFF, Keith William , HA, Hanh Tuong , RICHARDSON, Brett C. , SINGH, Harmeet
IPC分类号： H05H1/34 , H01L21/3065 , H01J37/20 , H01J37/32

2. 发明申请

WO2022035629A1 SUBSTRATE SUPPORTS WITH MULTILAYER STRUCTURE INCLUDING COUPLED HEATER ZONES WITH LOCAL THERMAL CONTROL 审中-公开
公开(公告)号：WO2022035629A1
公开(公告)日：2022-02-17
申请号：PCT/US2021/044122
申请日：2021-08-02
申请人： LAM RESEARCH CORPORATION
发明人： SINGH, Harmeet , MITROVIC, Slobodan , EHRLICH, Darrell , WU, Benny
IPC分类号： H01L21/67 , H01L21/683 , H05B3/14 , H05B3/28 , C23C16/458 , H01J37/32
摘要： A substrate support assembly for supporting a substrate includes a baseplate, a ceramic plate arranged on the baseplate, and N resistive heaters arranged in X rows and Y columns and coupled to the ceramic plate. X, Y, and N are integers greater than 1, and N is less than or equal to X*Y. Each of the N resistive heaters have a first terminal and a second terminal. The ceramic plate includes Y conductors arranged in a first layer of the ceramic plate, and X conductors arranged in a second layer of the ceramic plate. The first terminals of each resistive heater in one of the X rows are directly connected to the Y conductors, respectively, by first vias. Second terminals of each resistive heater in the one of the X rows are directly connected to one of the X conductors by second vias.

3. 发明申请

WO2018236614A1 HIGH ASPECT RATIO ETCH OF OXIDE METAL OXIDE METAL STACK 审中-公开
公开(公告)号：WO2018236614A1
公开(公告)日：2018-12-27
申请号：PCT/US2018/036934
申请日：2018-06-11
申请人： LAM RESEARCH CORPORATION
发明人： GUHA, Joydeep , REDDY, Sirish K. , CHATTOPADHYAY, Kaushik , MOUNTSIER, Thomas W. , EPPLER, Aaron , LILL, Thorsten , VAHEDI, Vahid , SINGH, Harmeet
IPC分类号： H01L21/311 , H01L21/3213 , H01L21/3065 , H01L21/033
CPC分类号： H01L21/31144 , H01L21/30604 , H01L21/3065 , H01L21/3081 , H01L21/3086 , H01L21/31116 , H01L21/31122 , H01L21/32137 , H01L21/32139 , H01L21/76802
摘要： A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask is formed over the stack. The hardmask is patterned. The OMOM stack is etched through the hardmask.

4. 发明申请

WO2011081645A2 ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY 审中-公开
标题翻译：调整基板温度以提高光盘的均匀性
公开(公告)号：WO2011081645A2
公开(公告)日：2011-07-07
申请号：PCT/US2010/003149
申请日：2010-12-13
申请人： LAM RESEARCH CORPORATION , GAFF, Keith William , SINGH, Harmeet , COMENDANT, Keith , VAHEDI, Vahid
发明人： GAFF, Keith William , SINGH, Harmeet , COMENDANT, Keith , VAHEDI, Vahid
IPC分类号： H01L21/3065
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Abstract A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：摘要一种等离子体蚀刻系统，其具有具有多个可独立控制的加热器区域的基板支撑组件。等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

5. 发明申请

WO2010062345A2 LOWER ELECTRODE ASSEMBLY OF PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：等离子体处理室的下部电极组件
公开(公告)号：WO2010062345A2
公开(公告)日：2010-06-03
申请号：PCT/US2009/005857
申请日：2009-10-29
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , CHAU, Quan , GAFF, Keith William , HA, Hanh Tuong , RICHARDSON, Brett C. , SINGH, Harmeet
发明人： AUGUSTINO, Jason , CHAU, Quan , GAFF, Keith William , HA, Hanh Tuong , RICHARDSON, Brett C. , SINGH, Harmeet
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01J37/20 , H01J37/32091 , H01J37/32541 , H01J37/3255 , H01J37/32642 , H01J37/32715
摘要： A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.
摘要翻译：用于等离子体处理室中的下电极组件包括金属底座和上边缘环和下边缘环。金属基座包括钎焊在一起并在基座的下侧表面上形成钎焊线的金属板，从下侧表面水平向内延伸的边缘环支撑表面以及边缘环支撑表面上方的上侧表面。上边缘环包括安装在边缘环支撑表面上的下表面，并且下边缘环围绕底座的下侧表面，在上边缘环和下边缘环的相对表面之间以及下边缘环与外边缘之间具有间隙基地周围。该间隙的总间隙长度与平均间隙宽度的纵横比足以阻止钎焊线处的电弧。

6. 发明申请

WO2010055441A2 IMPROVED SUBSTRATE TEMPERATURE CONTROL BY USING LIQUID CONTROLLED MULTIZONE SUBSTRATE SUPPORT 审中-公开
标题翻译：通过使用液体控制的多基板支撑来改进基板温度控制
公开(公告)号：WO2010055441A2
公开(公告)日：2010-05-20
申请号：PCT/IB2009/054876
申请日：2009-11-03
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , SINGH, Harmeet , COMENDANT, Keith
发明人： SINGH, Harmeet , COMENDANT, Keith
IPC分类号： C23C14/50 , C23C16/46
CPC分类号： H01L21/67248 , C23C16/4586 , C23C16/46 , C23C16/463 , C23C16/50 , C23C16/52 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.
摘要翻译：提供了一种用于等离子体处理装置的反应室中的基板支架。衬底支撑件包括基部构件和覆盖基底构件的传热构件。传热构件具有多个区域以分别加热和冷却传热构件的每个区域。静电吸盘覆盖传热部件。静电卡盘具有用于在等离子体处理装置的反应室中支撑基板的支撑表面。冷液源和热液体源与每个区域中的流动通道流体连通。阀装置可操作以通过调节热液体与在流动通道中循环的冷液体的混合比来独立地控制液体的温度。在另一个实施例中，沿着供应管线和输送管线的加热元件在流动通道中循环之前加热来自液体源的液体。

7. 发明申请

WO2008049024A1 METHODS AND APPARATUS FOR TUNING A SET OF PLASMA PROCESSING STEPS 审中-公开
标题翻译：用于调整一套等离子体处理步骤的方法和装置
公开(公告)号：WO2008049024A1
公开(公告)日：2008-04-24
申请号：PCT/US2007/081682
申请日：2007-10-17
申请人： LAM RESEARCH CORPORATION , VAHEDI, Vahid , DAUGHERTY, John E , SINGH, Harmeet , CHEN, Anthony
发明人： VAHEDI, Vahid , DAUGHERTY, John E , SINGH, Harmeet , CHEN, Anthony
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

8. 发明申请

WO2022173557A1 C-SHROUD MODIFICATION FOR PLASMA UNIFORMITY WITHOUT IMPACTING MECHANICAL STRENGTH OR LIFETIME OF THE C-SHROUD 审中-公开
公开(公告)号：WO2022173557A1
公开(公告)日：2022-08-18
申请号：PCT/US2022/012618
申请日：2022-01-14
申请人： LAM RESEARCH CORPORATION
发明人： MANKIDY, Pratik , JAEWON, Kim , SINGH, Harmeet , LI, Ming
IPC分类号： H01J37/32
摘要： A confinement ring for use in a plasma processing chamber includes an upper horizontal section, a vertical section, and a lower horizontal section. The upper horizontal section extends between an upper inner radius and an outer radius of the confinement ring, The lower horizontal section extends between an lower inner radius and the outer radius of the confinement ring, and includes an extension section that extends to the lower inner radius. A top surface of the lower horizontal section provides for an angle down toward the lower inner radius. The vertical section is disposed between the outer radius and an inside radius of the confinement ring. The vertical section connects the upper horizontal section to the lower horizontal section of the confinement ring.

9. 发明申请

WO2013124756A1 METHODS AND APPARATUS FOR SYNCHRONISING RF PULSES IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于在等离子体处理系统中同步RF脉冲的方法和装置
公开(公告)号：WO2013124756A1
公开(公告)日：2013-08-29
申请号：PCT/IB2013/051010
申请日：2013-02-07
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG
发明人： VALCORE, John , SINGH, Harmeet , LYNDAKER, Bradford J.
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/32183 , H01J37/32146 , H01J37/32174
摘要： A synchronized pulsing arrangement for providing at least two synchronized pulsing RF signals to a plasma processing chamber of a plasma processing system is provided. The arrangement includes a first RF generator for providing a first RF signal. The first RF signal is provided to the plasma processing chamber to energize a plasma therein, the first RF signal representing a pulsing RF signal. The arrangement also includes a second RF generator for providing a second RF signal to the plasma processing chamber. The second RF generator has a sensor subsystem for detecting values of at least one parameter associated with the plasma processing chamber that reflects whether the first RF signal is pulsed high or pulsed low and a pulse controlling subsystem for pulsing the second RF signal responsive to the detecting the values of at least one parameter.
摘要翻译：提供了一种用于向等离子体处理系统的等离子体处理室提供至少两个同步脉冲RF信号的同步脉冲装置。该装置包括用于提供第一RF信号的第一RF发生器。第一RF信号被提供给等离子体处理室以激励其中的等离子体，第一RF信号表示脉冲RF信号。该装置还包括用于向等离子体处理室提供第二RF信号的第二RF发生器。第二RF发生器具有用于检测与等离子体处理室相关联的至少一个参数的值的传感器子系统，其反映第一RF信号是高脉冲还是脉冲低脉冲，以及响应于检测脉冲控制第二RF信号的脉冲控制子系统至少有一个参数的值。

10. 发明申请

WO2013039718A1 A COMPONENT OF A SUBSTRATE SUPPORT ASSEMBLY PRODUCING LOCALIZED MAGNETIC FIELDS 审中-公开
标题翻译：基座支撑组件的组件生产本地化磁场
公开(公告)号：WO2013039718A1
公开(公告)日：2013-03-21
申请号：PCT/US2012/053386
申请日：2012-08-31
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet , GAFF, Keith , RICHARDSON, Brett , LEE, Sung
发明人： SINGH, Harmeet , GAFF, Keith , RICHARDSON, Brett , LEE, Sung
IPC分类号： C23C16/00
CPC分类号： H01J37/32669 , H01F7/20 , H01J37/32715 , H01L21/31116 , H01L21/67069
摘要： A component of a substrate support assembly such as a substrate support or edge ring includes a plurality of current loops incorporated in the substrate support and/or the edge ring. The current loops are laterally spaced apart and extend less than halfway around the substrate support or edge ring with each of the current loops being operable to induce a localized DC magnetic field of field strength less than 20 Gauss above a substrate supported on the substrate support during plasma processing of the substrate. When supplied with DC power, the current loops generate localized DC magnetic fields over the semiconductor substrate so as to locally affect the plasma and compensate for non-uniformity in plasma processing across the substrate.
摘要翻译：诸如衬底支撑件或边缘环的衬底支撑组件的部件包括结合在衬底支撑件和/或边缘环中的多个电流回路。电流环横向间隔开并且延伸小于基板支撑件或边缘环周围的一半，其中每个电流回路可操作以在基板支撑件上支撑的基板上方引起小于20高斯的场强的局部DC磁场，基板的等离子体处理。当提供直流电源时，电流环路在半导体衬底上产生局部DC磁场，以便局部地影响等离子体并且补偿横跨衬底的等离子体处理的不均匀性。

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