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1. 发明公开

EP1756244A4 CERIUM OXIDE ABRASIVE AND SLURRY CONTAINING THE SAME 有权
标题翻译：氧化铈的研磨和含有泥浆
公开(公告)号：EP1756244A4
公开(公告)日：2008-03-26
申请号：EP06715744
申请日：2006-01-24
申请人： LG CHEMICAL LTD , KIM JONG PIL
发明人： NHO JUN-SEOK , OH MYOUNG-HWAN , KIM JANG-YUL , CHO SEUNG-BEOM
IPC分类号： C09K3/14 , B24B37/00 , B82Y10/00 , B82Y30/00 , B82Y99/00 , C01F17/00 , H01L21/304
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2004/03 , C01P2004/04 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C09K3/1409 , C09K3/1463
摘要： Disclosed are a cerium oxide abrasive for selectively polishing various SiO2 films and SiO2-Si3N4 films; and a slurry containing the same. The cerium oxide abrasive and the polishing slurry of the present invention have a high polishing rate and are also free from microscratches in a polished surface upon polishing since polycrystalline cerium oxide having a mean crystalline particle size of 5 nm or less is synthesized by using hexagonal cerium carbonate having a hexagonal crystal structure as a raw material of cerium.

2. 发明申请

WO2006080796A8 CERIUM OXIDE ABRASIVE AND SLURRY CONTAINING THE SAME 审中-公开
标题翻译：氧化铈磨料和含有这种磨料的浆料
公开(公告)号：WO2006080796A8
公开(公告)日：2006-12-14
申请号：PCT/KR2006000271
申请日：2006-01-24
申请人： LG CHEMICAL LTD , NHO JUN-SEOK , OH MYOUNG-HWAN , KIM JANG-YUL , KIM JONG-PIL , CHO SEUNG-BEOM
发明人： NHO JUN-SEOK , OH MYOUNG-HWAN , KIM JANG-YUL , KIM JONG-PIL , CHO SEUNG-BEOM
IPC分类号： C09K3/14 , B24B37/00 , B82Y10/00 , B82Y30/00 , B82Y99/00 , C01F17/00 , H01L21/304
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2004/03 , C01P2004/04 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C09K3/1409 , C09K3/1463
摘要： Disclosed are a cerium oxide abrasive for selectively polishing various SiO2 films and SiO2-Si3N4 films; and a slurry containing the same. The cerium oxide abrasive and the polishing slurry of the present invention have a high polishing rate and are also free from microscratches in a polished surface upon polishing since polycrystalline cerium oxide having a mean crystalline particle size of 5 nm or less is synthesized by using hexagonal cerium carbonate having a hexagonal crystal structure as a raw material of cerium.
摘要翻译：公开了用于选择性抛光各种SiO 2膜和SiO 2 -Si 3 N 4膜的氧化铈研磨剂; 和含有它的浆液。由于本发明的氧化铈研磨剂和研磨剂的研磨速度快，研磨后的研磨面上也没有微划痕，因为平均结晶粒径为5nm以下的多晶氧化铈通过使用六方铈作为铈原料的具有六方晶结构的碳酸盐。

3. 发明申请

WO2010123300A3 SLURRY FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光浆
公开(公告)号：WO2010123300A3
公开(公告)日：2011-03-31
申请号：PCT/KR2010002537
申请日：2010-04-22
申请人： LG CHEMICAL LTD , CHOI EUN-MI , SHIN DONG-MOK , CHO SEUNG-BEOM
发明人： CHOI EUN-MI , SHIN DONG-MOK , CHO SEUNG-BEOM
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C23F1/16 , C23F1/18
摘要： The present invention relates to a slurry for chemical mechanical polishing, comprising an abrasive; an oxidant; an organic acid; and a polymeric additive comprising polyolefin-polyalkyleneoxide copolymer, wherein the polyolefin-polyalkyleneoxide copolymer comprises a polyolefin repeat unit and two or more polyalkyleneoxide repeat units, and at least one polyalkyleneoxide repeat unit is branched.
摘要翻译：本发明涉及一种用于化学机械抛光的浆料，其包含研磨剂; 氧化剂有机酸; 以及包含聚烯烃 - 聚环氧烷共聚物的聚合物添加剂，其中所述聚烯烃 - 聚环氧烷共聚物包含聚烯烃重复单元和两个或更多个聚环氧烷重复单元，并且至少一个聚环氧烷烃重复单元是分支的。

4. 发明申请

WO2011112008A3 CRYSTALLINE CERIUM OXIDE AND METHOD FOR PREPARING SAME 审中-公开
标题翻译：氧化铈和其制备方法
公开(公告)号：WO2011112008A3
公开(公告)日：2012-01-12
申请号：PCT/KR2011001641
申请日：2011-03-09
申请人： LG CHEMICAL LTD , CHOI SANG-SOON , CHO SEUNG-BEOM , HA HYUN-CHUL , KWAK ICK-SOON , CHO JUN-YEON
发明人： CHOI SANG-SOON , CHO SEUNG-BEOM , HA HYUN-CHUL , KWAK ICK-SOON , CHO JUN-YEON
IPC分类号： C01F17/00 , C09K3/14
CPC分类号： C09K3/1463 , B82Y30/00 , C01F17/0043 , C01F17/005 , C01P2002/60 , C01P2002/72 , C01P2004/03 , C01P2004/38 , C01P2004/39 , C01P2004/51 , C01P2004/52 , C01P2004/62 , C01P2004/64 , C09K3/1409 , Y10T428/2982
摘要： The present invention relates to a crystalline cerium oxide which has an easily adjustable crystal structure, shape and size, and superior abrasive characteristics, and which can be prepared in an economically advantageous and efficient manner through a simple process, as well as to a method for preparing the crystalline cerium oxide. The crystalline cerium oxide can be a submicron crystalline cerium oxide having a volume mean particle diameter of a predetermined range and standard deviation of particle diameters of a predetermined range.
摘要翻译：本发明涉及结晶二氧化铈，它具有易于调节的晶体结构，形状和尺寸以及优异的研磨特性，并且可以通过简单的工艺以经济上有利和有效的方式制备，以及一种方法制备结晶二氧化铈。结晶二氧化铈可以是具有预定范围的体积平均粒径和预定范围的粒径的标准偏差的亚微米结晶二氧化铈。

5. 发明申请

WO2007055523A9 CERIUM CARBONATE POWDER, CERIUM OXIDE POWDER, METHOD FOR PREPARING THE SAME, AND CMP SLURRY COMPRISING THE SAME 审中-公开
标题翻译：碳酸钙粉末，氧化铈粉末，其制备方法和包括其的CMP浆料
公开(公告)号：WO2007055523A9
公开(公告)日：2010-02-18
申请号：PCT/KR2006004686
申请日：2006-11-10
申请人： LG CHEMICAL LTD
发明人： OH MYOUNG-HWAN , NHO JUN-SEOK , KIM JONG-PIL , KIM JANG-YUL , CHO SEUNG-BEOM
IPC分类号： C01F17/00 , C01B32/60
CPC分类号： C01F17/005 , B82Y30/00 , C01F17/0043 , C01P2002/60 , C01P2002/76 , C01P2004/03 , C01P2004/54 , C01P2004/62 , C01P2004/64 , C09K3/1409 , C09K3/1463
摘要： Disclosed is a method of preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and subjecting the mixture solution to a precipitation reaction, wherein the concentration of cerium in the cerium precursor solution ranges from IM to 1OM, the molar concentration ratio of the cerium precursor to the carbonate precursor ranges from 1:1 to 1:7, and the cerium precursor solution contains at least one additive selected from the group consisting of carbonate compounds, acrylic compounds, and sulfate ion-containing compounds. According to the disclosed invention, cerium carbonate powder having a uniform particle size of 0.05 to 1ú can be prepared through a liquid-phase process by controlling the concentration of the cerium precursor solution, the molar concentration ratio of the cerium precursor to the carbonate precursor solution, the kind of additives, and the like. Also, the cerium carbonate powder is enabled to have a uniform shape with an aspect ratio of 1 to 5, even though it has an orthorhombic crystal structure.
摘要翻译：公开了一种通过将铈前体溶液与碳酸盐前体溶液混合并使混合溶液进行沉淀反应制备碳酸铈粉末的方法，其中铈前体溶液中铈的浓度为1M至10M，摩尔浓度比碳酸酯前体的铈前体的范围为1：1至1：7，并且铈前体溶液含有至少一种选自碳酸酯化合物，丙烯酸酯化合物和含硫酸根离子的化合物的添加剂。根据所公开的发明，通过控制铈前体溶液的浓度，铈前体与碳酸酯前体溶液的摩尔浓度比，可以通过液相法制备具有0.05〜1μ的均匀粒径的碳酸铈粉末，添加剂的种类等。此外，碳酸铈粉末能够具有纵横比为1〜5的均匀形状，即使其具有正交晶体结构。

6. 发明申请

WO2007086665A1 CMP SLURRY AND METHOD FOR POLISHING SEMICONDUCTOR WAFER USING THE SAME 审中-公开
标题翻译： CMP浆料和使用其抛光半导体波长的方法
公开(公告)号：WO2007086665A1
公开(公告)日：2007-08-02
申请号：PCT/KR2007000332
申请日：2007-01-19
申请人： LG CHEMICAL LTD
发明人： CHO SEUNG-BEOM , KIM JONG-PIL , NHO JUN-SEOK , OH MYOUNG-HWAN , KIM JANG-YUL
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , H01L21/3212
摘要： Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.
摘要翻译：公开了一种CMP浆料，其中将包含重均分子量为30-500并含有羟基（OH），羧基（COOH）或二者）的化合物加入到包含磨料颗粒和水的CMP浆料中并且具有第一粘度，使得CMP浆料被控制为具有比第一粘度低5-30％的第二粘度。还公开了使用CMP浆料来研磨半导体晶片的方法。根据所公开的发明，可以减少CMP浆料中的磨料颗粒的聚集粒度，同时可以减少CMP浆料的粘度，并且可以提高抛光时晶片的全局平面性。因此，CMP浆料可以有利地用于制造需要精细图案的半导体器件的工艺中，并且可以通过其在半导体工艺中的使用来提高半导体器件的可靠性和生产。

7. 发明申请

WO2011049318A3 SLURRY COMPOSITION FOR CMP, AND POLISHING METHOD 审中-公开
标题翻译：用于CMP的浆料组合物和抛光方法
公开(公告)号：WO2011049318A3
公开(公告)日：2011-09-01
申请号：PCT/KR2010007006
申请日：2010-10-13
申请人： LG CHEMICAL LTD , SHIN DONG-MOK , CHOI EUN-MI , CHO SEUNG-BEOM
发明人： SHIN DONG-MOK , CHOI EUN-MI , CHO SEUNG-BEOM
IPC分类号： C09K3/14 , H01L21/304
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The present invention relates to a slurry composition for CMP comprising: abrasive particles; a dispersant; an ionic polymer additive; and a nonionic polymer additive including a polyolefin-polyethylene glycol copolymer comprising two or more polyethylene glycol repeating units wherein at least one polyethylene glycol repeating unit is branched, and a polishing method using the same. The slurry composition for CMP has a low polishing rate to a single crystal silicon film or a polysilicon film and a high polishing rate to a silicon oxide film, thereby showing excellent polishing selectivity ratio.
摘要翻译：本发明涉及用于CMP的浆料组合物，其包含：磨粒; 分散剂; 离子聚合物添加剂; 和包含聚烯烃 - 聚乙二醇共聚物的非离子型聚合物添加剂以及使用其的聚乙二醇共聚物的抛光方法，所述聚烯烃 - CMP用浆料组合物对于单晶硅膜或多晶硅膜的研磨速度慢，对氧化硅膜的研磨速度快，显示出优异的研磨选择比。

8. 发明申请

WO2011034287A3 METHOD FOR PREPARING A CERIUM CARBONATE COMPOUND, METHOD FOR PREPARING CERIUM OXIDE, AND CRYSTALLINE CERIUM OXIDE 审中-公开
标题翻译：制备碳酸铈化合物的方法，制备氧化铈的方法以及结晶氧化铈
公开(公告)号：WO2011034287A3
公开(公告)日：2011-07-21
申请号：PCT/KR2010005459
申请日：2010-08-18
申请人： LG CHEMICAL LTD , CHO SEUNG-BEOM , CHOI SANG-SOON , CHO JUN-YEON
发明人： CHO SEUNG-BEOM , CHOI SANG-SOON , CHO JUN-YEON
IPC分类号： C01F17/00 , C09K3/14
CPC分类号： C01F17/0043 , B82Y30/00 , C01F17/005 , C01P2002/60 , C01P2002/72 , C01P2004/03 , C01P2004/61 , C01P2004/64 , C04B35/6261 , C04B35/6263 , C04B35/62675 , C04B2235/3229 , C04B2235/442 , C04B2235/5454 , C04B2235/549 , C09K3/1409
摘要： The present invention relates to a method for preparing a cerium carbonate compound, which enables the easy adjustment of the crystal structure, size, shape, etc. of the cerium carbonate compound, and which enables the preparation of the cerium carbonate compound in an economic and efficient manner. The method for preparing a cerium carbonate compound comprises a step of enabling lanthanite to react under a temperature-rising condition to prepare a cerium carbonate compound comprising orthorhombic cerium oxycarbonate hydrate (Ce2O(CO3)2·H2O) or hexagonal cerium hydroxy carbonate (Ce(OH)·(CO3)).
摘要翻译：碳酸铈化合物的制备方法技术领域本发明涉及碳酸铈化合物的制备方法，其能够容易地调节碳酸铈化合物的晶体结构，尺寸，形状等，并且能够经济地制备碳酸铈化合物高效的方式。制备碳酸铈化合物的方法包括使镧石在升温条件下反应以制备包含斜方晶系碳酸氧铈水合物（Ce 2 O（CO 3）2·H 2 O）或六方碳酸羟基铈（Ce（ OH）·（CO 3））。

9. 发明申请

WO2009116806A9 METHOD FOR PREPARING CERIUM CARBONATE 审中-公开
标题翻译：制备碳酸钙的方法
公开(公告)号：WO2009116806A9
公开(公告)日：2009-11-26
申请号：PCT/KR2009001383
申请日：2009-03-18
申请人： LG CHEMICAL LTD , CHOI SANG-SOON , OH MYOUNG-HWAN , CHO SEUNG-BEOM
发明人： CHOI SANG-SOON , OH MYOUNG-HWAN , CHO SEUNG-BEOM
IPC分类号： C09K3/14 , C01F17/00 , H01L21/304
CPC分类号： C01F17/005 , B82Y30/00 , C01F17/0043 , C01P2002/72 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： The present invention relates to a method for preparing cerium carbonate which enables preparation of hexagonal cerium carbonate by a simplified process, a cerium carbonate powder prepared thereby, and a method for preparing a cerium oxide powder using the same. The method for preparing cerium carbonate comprises the step of contact-reacting orthorhombic cerium carbonate with a primary alcohol aqueous solution comprising water and primary alcohol at a weight ratio of 1:0.1 or more at a temperature of 160 °C or more to form hexagonal cerium carbonate.
摘要翻译：本发明涉及一种制备碳酸铈的方法，其可以通过简化的方法制备六方碳酸铈，由此制备的碳酸铈粉末，以及使用其制备二氧化铈粉末的方法。制备碳酸铈的方法包括在160℃或更高的温度下使正交碳酸铈与含有水和伯醇的伯醇水溶液以1:0.1或更高的重量比接触反应以形成六方晶铈的步骤碳酸盐。

10. 发明专利

AU2003219607A1 METHOD FOR PREPARING SINGLE CRYSTALLINE CERIUM OXIDE POWDERS 未知
公开(公告)号：AU2003219607A1
公开(公告)日：2003-11-03
申请号：AU2003219607
申请日：2003-04-14
申请人： LG CHEMICAL LTD
发明人： HAN DAE-GON , NOH JUN-SEOK , KWON TAE-HYUN , CHO SEUNG-BEOM , HONG HYE-JEONG
IPC分类号： C01F17/00
摘要： The present invention relates to a method for preparing single crystalline cerium oxide nanopowder capable of easily controlling the shape and granularity of particles. The method includes preparing cerium hydroxide by precipitating a cerium salt in the presence of a solvent mixture of organic solvent and water and hydrothermally reacting the prepared cerium hydroxide. The prepared single crystalline cerium oxide has a particle size of not less than about 30 nm and an excellent degree of dispersion.

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