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1. 发明申请

WO2009008958A3 METHOD OF POST ETCH POLYMER RESIDUE REMOVAL 审中-公开
标题翻译：去除聚合物残留物去除方法
公开(公告)号：WO2009008958A3
公开(公告)日：2009-04-16
申请号：PCT/US2008007759
申请日：2008-06-20
申请人： LAM RES CORP , YUN SEOKMIN , WILCOXSON MARK , ZHU JI , CHUANG KEVIN , CHANG HSIAO WEI , LOU DAVID
发明人： YUN SEOKMIN , WILCOXSON MARK , ZHU JI , CHUANG KEVIN , CHANG HSIAO WEI , LOU DAVID
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.
摘要翻译：用于从衬底表面去除蚀刻后聚合物残余物的系统和方法包括鉴定用于从衬底表面去除蚀刻后聚合物残余物的干闪光化学物质。干闪化学物质被配置为通过在通过低k电介质膜层形成特征的区域中的蚀刻操作来选择性去除留下的后蚀刻聚合物残余物。使用短闪光处理来施加所识别的干闪光化学物质，以除去至少一部分后蚀刻聚合物残余物，同时最小化对电介质膜层的损伤。然后将湿清洗化学品施加到基底的表面。湿式清洁化学品的应用有助于基本上去除短时间闪蒸过程留下的剩余后蚀刻聚合物残留物。

2. 发明申请

WO2009008958A2 METHOD OF POST ETCH POLYMER RESIDUE REMOVAL 审中-公开
标题翻译：去除聚合物残余物后的方法
公开(公告)号：WO2009008958A2
公开(公告)日：2009-01-15
申请号：PCT/US2008/007759
申请日：2008-06-20
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , WILCOXSON, Mark , ZHU, Ji , CHUANG, Kevin , CHANG, Hsiao, Wei , LOU, David
发明人： YUN, Seokmin , WILCOXSON, Mark , ZHU, Ji , CHUANG, Kevin , CHANG, Hsiao, Wei , LOU, David
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.
摘要翻译：用于从衬底表面除去蚀刻后聚合物残余物的系统和方法包括识别用于从衬底表面去除蚀刻后聚合物残余物的干式快速化学物质。干闪光化学品被配置为选择性地去除在通过低k电介质膜层形成特征的区域中由蚀刻操作留下的蚀刻后聚合物残留物。使用短闪速工艺来施加所识别的干闪光化学品，以去除至少一部分蚀刻后聚合物残余物，同时最小化对介电膜层的损害。然后将湿清洁化学物质施加到基底的表面。湿式清洁化学品的应用有助于基本上去除短闪过程留下的剩余蚀刻后聚合物残留物。

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