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1. 发明申请

WO2012061362A2 ELECTRODE SECURING PLATENS AND ELECTRODE POLISHING ASSEMBLIES INCORPORATING THE SAME 审中-公开
标题翻译：电极安装板和电极抛光组件
公开(公告)号：WO2012061362A2
公开(公告)日：2012-05-10
申请号：PCT/US2011/058745
申请日：2011-11-01
申请人： LAM RESEARCH CORPORATION , LA CROIX, Cliff , AVOYAN, Armen , OUTKA, Duane , ZHOU, Catherine , SHIH, Hong
发明人： LA CROIX, Cliff , AVOYAN, Armen , OUTKA, Duane , ZHOU, Catherine , SHIH, Hong
IPC分类号： H01L21/304
CPC分类号： B24B37/30 , B24B41/061
摘要： In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.
摘要翻译：在一个实施例中，电极抛光组件可以包括电极固定压板，多个电极定位紧固件和电极。每个电极定位紧固件可以包括电极间隔肩部，从电极间隔肩部延伸的方差消除肩部，从变形消除肩部延伸的螺纹压板夹持部分和与螺纹压板夹持部分接合的螺纹螺母。电极定位紧固件将电极固定压板夹在螺母和电极间隔肩之间。方差消除肩部至少部分地在电极固定台板的多个方差消除通路之一内。最小位置叠加等于最小通道尺寸减去最大肩部尺寸。最大位置叠加等于最大通道尺寸减去最小肩部尺寸。最大位置叠加大于最小位置叠加。

2. 发明申请

WO2010068753A3 IMMERSIVE OXIDATION AND ETCHING PROCESS FOR CLEANING SILICON ELECTRODES 审中-公开
公开(公告)号：WO2010068753A3
公开(公告)日：2010-06-17
申请号：PCT/US2009/067495
申请日：2009-12-10
申请人： LAM RESEARCH CORPORATION , ZHOU, Catherine , OUTKA, Duane , AVOYAN, Armen , SHIH, Hong
发明人： ZHOU, Catherine , OUTKA, Duane , AVOYAN, Armen , SHIH, Hong
IPC分类号： H05H1/34 , H05H1/42
摘要： A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.

3. 发明申请

WO2010068752A3 PLATEN AND ADAPTER ASSEMBLIES FOR FACILITATING SILICON ELECTRODE POLISHING 审中-公开
公开(公告)号：WO2010068752A3
公开(公告)日：2010-06-17
申请号：PCT/US2009/067494
申请日：2009-12-10
申请人： LAM RESEARCH CORPORATION , AVOYAN, Armen , OUTKA, Duane , ZHOU, Catherine , SHIH, Hong
发明人： AVOYAN, Armen , OUTKA, Duane , ZHOU, Catherine , SHIH, Hong
IPC分类号： H01L21/304
摘要： A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis. The silicon electrode is polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary motion to the engaged silicon electrode, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode rotates about the rotary polishing axis. Additional embodiments are contemplated, disclosed and claimed.

4. 发明申请

WO2010002724A3 PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
公开(公告)号：WO2010002724A3
公开(公告)日：2010-01-07
申请号：PCT/US2009/048797
申请日：2009-06-26
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
发明人： AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
IPC分类号： H05H1/34
摘要： In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

5. 发明申请

WO2010002722A3 BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
公开(公告)号：WO2010002722A3
公开(公告)日：2010-01-07
申请号：PCT/US2009/048794
申请日：2009-06-26
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
发明人： AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
IPC分类号： H05H1/38 , H05H1/34 , H05H1/24
摘要： A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

6. 发明申请

WO2008121290A1 CLEANING OF BONDED SILICON ELECTRODES 审中-公开
标题翻译：粘结硅电极的清洁
公开(公告)号：WO2008121290A1
公开(公告)日：2008-10-09
申请号：PCT/US2008/003972
申请日：2008-03-27
申请人： LAM RESEARCH CORPORATION , OUTKA, Duane , AUGUSTINO, Jason , AVOYAN, Armen , WHITTEN, Stephen , SHIH, Hong , FANG, Yan
发明人： OUTKA, Duane , AUGUSTINO, Jason , AVOYAN, Armen , WHITTEN, Stephen , SHIH, Hong , FANG, Yan
IPC分类号： H01L21/306
CPC分类号： B08B3/04 , H01J37/32862
摘要： Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.
摘要翻译：清洁等离子体处理室部件的方法包括将部件的表面与清洁溶液接触，同时避免清洁溶液损坏其它表面或部件区域。要清洁的示例性等离子体处理室部件是具有硅构件的弹性体接合电极组件，其具有等离子体暴露的硅表面，背衬构件和在硅表面和背衬构件之间的弹性体接合材料。

7. 发明申请

WO2010002631A3 PROCESSES FOR RECONDITIONING MULTI-COMPONENT ELECTRODES 审中-公开
公开(公告)号：WO2010002631A3
公开(公告)日：2010-01-07
申请号：PCT/US2009/048244
申请日：2009-06-23
申请人： LAM RESEARCH CORPORATION , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
发明人： AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
IPC分类号： H05H1/34
摘要： A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.

8. 发明申请

WO2005123282A3 METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS 审中-公开
公开(公告)号：WO2005123282A3
公开(公告)日：2005-12-29
申请号：PCT/US2005/019466
申请日：2005-06-03
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , HUANG, Tuochuan , OUTKA, Duane , KUO, Jack , LIU, Shenjian , MOREL, Bruno , CHEN, Anthony
发明人： SHIH, Hong , HUANG, Tuochuan , OUTKA, Duane , KUO, Jack , LIU, Shenjian , MOREL, Bruno , CHEN, Anthony
IPC分类号： C23G1/02 , B08B3/00 , B08B3/04 , B08B3/14
摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.

9. 发明申请

WO2008088670A1 EXTENDING LIFETIME OF YTTRIUM OXIDE AS A PLASMA CHAMBER MATERIAL 审中-公开
标题翻译：氧化铝作为等离子体材料延长生命周期
公开(公告)号：WO2008088670A1
公开(公告)日：2008-07-24
申请号：PCT/US2008/000018
申请日：2008-01-03
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , OUTKA, Duane , LIU, Shenjian , DAUGHERTY, John
发明人： SHIH, Hong , OUTKA, Duane , LIU, Shenjian , DAUGHERTY, John
IPC分类号： H01L21/205
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least 150°C in an N 2 environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.
摘要翻译：提供延长作为等离子体室材料的氧化钇的寿命的两种方法。一种方法包括通过共同烧结双层生坯，制造等离子体处理室的三层组分，其中一层包含陶瓷颗粒，第二层包含氧化钇颗粒。两层在烧结过程中紧密接触。在优选实施例中，三层部件包括氧化钇的外层，YAG的中间层和第二氧化铝外层。可选地，在烧结过程中将盘压在一起。所得到的三层组分的孔隙率非常低。优选地，氧化钇的外层，YAG的中间层和氧化铝的第二外层中的任一个的孔隙率小于3％。第二种方法包括通过在组件的所有氧化钇表面上刷上密封剂，将具有小于50cP的室温粘度的液体厌氧密封剂施加到组分上来密封氧化钇等离子喷涂组分，湿清洗组分，固化湿在N 2 2环境中在至少150℃的温度下清洁组分超过2小时; 并且通过重复用于施加第一涂层的程序将第二密封剂涂层施加到固化的基底上。

10. 发明申请

WO2009048702A1 CLEANING FIXTURES AND METHODS OF CLEANING ELECTRODE ASSEMBLY PLENUMS 审中-公开
标题翻译：清洁装置和清洁电极组件的方法
公开(公告)号：WO2009048702A1
公开(公告)日：2009-04-16
申请号：PCT/US2008/075675
申请日：2008-09-09
申请人： LAM RESEARCH CORPORATION , OUTKA, Duane , DENTY, Bill , DHINDSA, Rajinder
发明人： OUTKA, Duane , DENTY, Bill , DHINDSA, Rajinder
IPC分类号： H01L21/3065 , H01L21/302 , C23C16/50
CPC分类号： B08B3/04
摘要： According to one embodiment of the present invention, a method of cleaning one or more fluid plenums of an electrode assembly is provided. According to the method, a plurality of fluid ports in communication with the fluid plenum are isolated and differentiated into respective sets of plenum input ports and plenum output ports. The input and output ports are engaged with respective cleaning fluid couplings. A cleaning fluid is directed through the fluid plenum by creating a fluid pressure differential ΔP = P IN - P ouτ across the plenum input and output ports. The pressure differential ΔP is large enough to force cleaning fluid from the cleaning fluid supply duct to the cleaning fluid waste duct through the fluid plenum. Additional embodiments are disclosed and claimed.
摘要翻译：根据本发明的一个实施例，提供一种清洁电极组件的一个或多个流体增压室的方法。根据该方法，与流体增压室连通的多个流体端口被隔离并分成相应的一组增压室输入端口和增压室输出端口。输入和输出端口与相应的清洁液体接头接合。清洁流体通过在整流室输入和输出端口上产生流体压差ΔP= PIN-Pout而引导通过流体通风室。压力差ΔP足够大以将清洁流体从清洁流体供应管道通过流体通风室强制到清洁流体废物管道。公开并要求保护附加实施例。

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