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1. 发明申请

WO2005059962A3 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 审中-公开
标题翻译：温度控制热边缘组件，用于降低等离子体反应器蚀刻速率
公开(公告)号：WO2005059962A3
公开(公告)日：2006-02-23
申请号：PCT/US2004041768
申请日：2004-12-10
申请人： LAM RES CORP , FISCHER ANDREAS , LOEWENHARDT PETER
发明人： FISCHER ANDREAS , LOEWENHARDT PETER
IPC分类号： H01J37/32 , H01L21/00 , H01L21/687 , H01L21/306 , B24B5/00 , B24B7/22 , B24B29/00 , B24B37/04 , B24B41/06 , C23F1/02
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要翻译：适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。组件包括导电下环，陶瓷中间环和上环。中间环覆盖在下环上并且适于经由下环连接到RF电极。上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

2. 发明申请

WO2004102638A3 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 审中-公开
标题翻译：窄带隙电容耦合反应器的射频脉冲
公开(公告)号：WO2004102638A3
公开(公告)日：2005-07-28
申请号：PCT/US2004013707
申请日：2004-04-29
申请人： LAM RES CORP , LOEWENHARDT PETER , SRINIVASAN MUKUND , FISCHER ANDREAS
发明人： LOEWENHARDT PETER , SRINIVASAN MUKUND , FISCHER ANDREAS
IPC分类号： H01J37/32
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided, comprising a capacitively coupled process chamber (100), a gas source (110), a first (104) and a second electrode (108) within the process chamber. A first radio frequency power source (144) is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source (148) is electrically connected to at least one of the first and second electrodes. A first modulation control (133) is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的装置，其包括处理室内的电容耦合处理室（100），气体源（110），第一（104）和第二电极（108）。第一射频电源（144）电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源（148）电连接到第一和第二电极中的至少一个。第一调制控制（133）连接到第一射频电源，以提供对第一射频电源的受控调制。

3. 发明申请

WO2004003963A3 PLASMA PROCESSOR WITH ELECTRODE SIMULTANEOUSLY RESPONSIVE TO PLURAL FREQUENCIES 审中-公开
标题翻译：电极处理器，电极同时响应多种频率
公开(公告)号：WO2004003963A3
公开(公告)日：2004-07-22
申请号：PCT/US0319366
申请日：2003-06-20
申请人： LAM RES CORP , VAHEDI VAHID , LOEWENHARDT PETER , ELLINGBOE BERT , KUTHI ANDY , FISCHER ANDREAS
发明人： VAHEDI VAHID , LOEWENHARDT PETER , ELLINGBOE BERT , KUTHI ANDY , FISCHER ANDREAS
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
摘要翻译：处理工件的真空室中的等离子体由包括第一电极同时响应于第一和第二RF频率的功率的第一电极和直流接地第二电极之间的等离子体约束体积界定。直流接地延伸部基本上与第一电极对准。在第一频率处的相当大的功率百分比被耦合到包括第一和第二电极而不是扩展的路径，而在第二频率处的相当大的功率百分比耦合到包括第一电极和延伸的路径，而不是第二频率的路径电极。施加到第一电极的第一和第二频率处的相对功率的改变控制第一电极的直流偏置电压。

4. 发明申请

WO2012154454A2 MITIGATION OF SILICIDE FORMATION ON WAFER BEVEL 审中-公开
标题翻译：减少水分上的硅化物形成
公开(公告)号：WO2012154454A2
公开(公告)日：2012-11-15
申请号：PCT/US2012036018
申请日：2012-05-01
申请人： LAM RES CORP , FISCHER ANDREAS , BASS WILLIAM SCOTT
发明人： FISCHER ANDREAS , BASS WILLIAM SCOTT
IPC分类号： H01L21/3065
CPC分类号： H01L21/02274 , H01L21/28097 , H01L21/28518 , H01L29/517
摘要： A method for preventing formation of metal silicide material on a wafer bevel is provided, where the wafer bevel surrounds a central region of the wafer. The wafer is placed in bevel plasma processing chamber. A protective layer is deposited on the wafer bevel. The wafer is removed from the bevel plasma processing chamber. A metal layer is deposited over at least part of the central region of the wafer, wherein part of the metal layer is deposited over the protective layer. Semiconductor devices are formed while preventing metal silicide formation on the wafer bevel.
摘要翻译：提供了一种用于防止在晶片斜面上形成金属硅化物材料的方法，其中晶片斜面围绕晶片的中心区域。将晶片放置在斜面等离子体处理室中。保护层沉积在晶片斜面上。从斜面等离子体处理室移除晶片。金属层沉积在晶片的中心区域的至少一部分上，其中金属层的一部分沉积在保护层上。形成半导体器件，同时防止在晶片斜面上形成金属硅化物。

5. 发明申请

WO2010036707A3 ADJUSTABLE THERMAL CONTACT BETWEEN AN ELECTROSTATIC CHUCK AND A HOT EDGE RING BY CLOCKING A COUPLING RING 审中-公开
标题翻译：通过连接环绕静电卡盘和热边缘环之间可调节的热接触
公开(公告)号：WO2010036707A3
公开(公告)日：2010-07-01
申请号：PCT/US2009058034
申请日：2009-09-23
申请人： LAM RES CORP , POVOLNY HENRY S , FISCHER ANDREAS
发明人： POVOLNY HENRY S , FISCHER ANDREAS
IPC分类号： H01L21/368 , H01L21/687 , H05H1/34
CPC分类号： H01L21/67103 , H01J37/32642 , H01J37/32715 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/6831 , Y10T279/23 , Y10T403/21
摘要： A clockable device for use with an electrostatic chuck configured to hold a substrate in a plasma environment is disclosed. The clockable device comprises a first portion of the electrostatic chuck having at least one face with variable thermal contact areas located thereon. A second portion of the electrostatic chuck has at least one face with variable thermal contact areas located thereon. The at least one face of the second portion is configured to be placed in thermal contact with the at least one face of the first portion to control a thermal gradient across a face of the substrate.
摘要翻译：公开了一种与静电卡盘一起使用的可定时装置，该静电卡盘构造成将基板保持在等离子体环境中。可计时装置包括具有位于其上的可变热接触区域的至少一个面的静电卡盘的第一部分。静电卡盘的第二部分具有位于其上的可变热接触区域的至少一个面。第二部分的至少一个面构造成与第一部分的至少一个表面热接触，以控制横跨衬底的表面的热梯度。

6. 发明申请

WO2008010943A3 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 审中-公开
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：WO2008010943A3
公开(公告)日：2009-04-09
申请号：PCT/US2007015928
申请日：2007-07-13
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

7. 发明申请

WO2007120994A3 METHODS AND APPARATUS FOR SELECTIVE PRE-COATING OF A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于选择性预涂等离子体处理室的方法和设备
公开(公告)号：WO2007120994A3
公开(公告)日：2008-10-02
申请号：PCT/US2007063102
申请日：2007-03-01
申请人： LAM RES CORP , FISCHER ANDREAS
发明人： FISCHER ANDREAS
IPC分类号： H01L21/302
CPC分类号： H01J37/32642 , C23C16/4404 , C23C16/5096 , H01J37/32623
摘要： An apparatus for selectively pre-coating a plasma processing chamber, Including a chamber wall is disclosed. The apparatus includesa first set of RF electrodes, the first set of RF electrodes configured to strikea first pre-coat plasma, the first set of RF electrodes defining a first plasma chamber zone. The apparatus also includes a first set of conflnemenr rings disposed around the first set of RF electrodes; and a second set of confinement rings disposed between the Hrst set ofccnfinement rings and the chamber wall. The apparatus further includes a gas delivery system configured to apply a first pre-coat layer to the first phlsxna zone when a first pre-coat gas is delivered and the first set of RF electrodes is energized. The apparatus also includes the gas delivery system configured to apply a second pre-coat layer to the second plasma zone when a second pre-coat gas is delivered.
摘要翻译：公开了一种用于选择性预涂覆等离子体处理室的设备，包括室壁。该设备包括第一组RF电极，第一组RF电极被配置为对第一预涂层等离子体进行冲击，第一组RF电极限定第一等离子体室区域。该装置还包括围绕第一组RF电极设置的第一组密封环; 以及设置在第一组限制环和腔室壁之间的第二组限制环。该设备还包括气体输送系统，该气体输送系统构造成当第一预涂覆气体被输送并且第一组RF电极被激励时将第一预涂层施加到第一纤维区域。该装置还包括气体输送系统，该气体输送系统构造成当输送第二预涂覆气体时将第二预涂层施加到第二等离子体区域。

8. 发明申请

WO2006012003A3 REDUCING PLASMA IGNITION PRESSURE 审中-公开
标题翻译：降低等离子体点火压力
公开(公告)号：WO2006012003A3
公开(公告)日：2006-07-06
申请号：PCT/US2005021098
申请日：2005-06-14
申请人： LAM RES CORP , WIEPKING MARK , LYNDAKER BRADFORD J , KUTHI ANDRAS , FISCHER ANDREAS
发明人： WIEPKING MARK , LYNDAKER BRADFORD J , KUTHI ANDRAS , FISCHER ANDREAS
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了一种用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。该方法包括在等离子体点火步骤中点燃等离子体。当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时，执行等离子体点火步骤。该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压，该偏置补偿电压高于第一偏置补偿电压，第二室压力基本上等于第一室压力。

9. 发明申请

WO2012154747A4 HIGH PRESSURE BEVEL ETCH PROCESS 审中-公开
标题翻译：高压斜面蚀刻工艺
公开(公告)号：WO2012154747A4
公开(公告)日：2013-03-14
申请号：PCT/US2012036954
申请日：2012-05-08
申请人： LAM RES CORP , FANG TONG , KIM YUNSANG S , FISCHER ANDREAS
发明人： FANG TONG , KIM YUNSANG S , FISCHER ANDREAS
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/32366 , H01J37/32385 , H01L21/02021 , H01L21/3065 , H01L21/32136 , H01L21/32138
摘要： A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.
摘要翻译：提供了一种在斜面等离子体处理室中对半导体进行斜面边缘处理的方法，其中半导体衬底支撑在半导体衬底支撑件上。该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 使处理气体流入斜面等离子体处理室; 在半导体衬底的周边处将处理气体激励成等离子体; 用等离子体对半导体衬底进行斜面加工。

10. 发明申请

WO2012154747A3 HIGH PRESSURE BEVEL ETCH PROCESS 审中-公开
标题翻译：高压水洗工艺
公开(公告)号：WO2012154747A3
公开(公告)日：2013-01-17
申请号：PCT/US2012036954
申请日：2012-05-08
申请人： LAM RES CORP , FANG TONG , KIM YUNSANG S , FISCHER ANDREAS
发明人： FANG TONG , KIM YUNSANG S , FISCHER ANDREAS
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/32366 , H01J37/32385 , H01L21/02021 , H01L21/3065 , H01L21/32136 , H01L21/32138
摘要： A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.
摘要翻译：提供了一种在半导体衬底支撑在半导体衬底支撑件上的斜面等离子体处理室中斜面加工半导体的方法。该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 将工艺气体流入斜面等离子体处理室; 使所述工艺气体在所述半导体衬底的外围处于等离子体中; 并用等离子体对半导体衬底进行斜面加工。

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