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1. 发明申请

WO2012078569A1 PLASMA PROCESSING SYSTEM CONTROL BASED ON RF VOLTAGE 审中-公开
标题翻译：基于射频电压的等离子体处理系统控制
公开(公告)号：WO2012078569A1
公开(公告)日：2012-06-14
申请号：PCT/US2011/063422
申请日：2011-12-06
申请人： LAM RESEARCH CORPORATION , VALCORE, JR., John C. , POVOLNY, Henry S.
发明人： VALCORE, JR., John C. , POVOLNY, Henry S.
IPC分类号： G01R31/26
CPC分类号： H01J37/32137 , G05B15/02 , G05B19/418 , G05B2219/45031 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/32917 , H01J37/32926 , H01J37/3299
摘要： A method for controlling a plasma processing system using wafer bias information derived from RF voltage information is proposed. The RF voltage is processed via an analog or digital methodology to obtain peak voltage information at least for each of the fundamental frequencies and the broadband frequency. The peak voltage information is then employed to derive the wafer bias information to serve as a feedback or control signal to hardware/software of the plasma processing system.
摘要翻译：提出了使用从RF电压信息导出的晶片偏置信息来控制等离子体处理系统的方法。 RF电压通过模拟或数字方法进行处理，以获得至少对于每个基本频率和宽带频率的峰值电压信息。然后使用峰值电压信息来导出晶片偏置信息以用作到等离子体处理系统的硬件/软件的反馈或控制信号。

2. 发明申请

WO2010036707A2 ADJUSTABLE THERMAL CONTACT BETWEEN AN ELECTROSTATIC CHUCK AND A HOT EDGE RING BY CLOCKING A COUPLING RING 审中-公开
标题翻译：静电卡盘和热边缘环之间的可调节热接触，通过一个耦合环
公开(公告)号：WO2010036707A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/058034
申请日：2009-09-23
申请人： LAM RESEARCH CORPORATION , POVOLNY, Henry S. , FISCHER, Andreas
发明人： POVOLNY, Henry S. , FISCHER, Andreas
IPC分类号： H01L21/368 , H01L21/687 , H05H1/34
CPC分类号： H01L21/67103 , H01J37/32642 , H01J37/32715 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/6831 , Y10T279/23 , Y10T403/21
摘要： A clockable device for use with an electrostatic chuck configured to hold a substrate in a plasma environment is disclosed. The clockable device comprises a first portion of the electrostatic chuck having at least one face with variable thermal contact areas located thereon. A second portion of the electrostatic chuck has at least one face with variable thermal contact areas located thereon. The at least one face of the second portion is configured to be placed in thermal contact with the at least one face of the first portion to control a thermal gradient across a face of the substrate.
摘要翻译：公开了一种与静电卡盘一起使用的可时钟设备，该静电卡盘被配置成将衬底保持在等离子体环境中。可时钟设备包括静电吸盘的第一部分，该第一部分具有至少一个带有位于其上的可变热接触区域的面。静电吸盘的第二部分具有至少一个具有位于其上的可变热接触区域的面。第二部分的至少一个面被配置为与第一部分的至少一个面热接触以控制横跨衬底面的热梯度。

3. 发明申请

WO2013009794A1 METHODS OF DECHUCKING AND SYSTEM THEREOF 审中-公开
标题翻译：删除方法及其系统
公开(公告)号：WO2013009794A1
公开(公告)日：2013-01-17
申请号：PCT/US2012/046135
申请日：2012-07-11
申请人： LAM RESEARCH CORPORATION , POVOLNY, Henry, S.
发明人： POVOLNY, Henry, S.
IPC分类号： C23C16/00 , C23F1/00 , H01T23/00
CPC分类号： H01L21/6831 , H01J37/32715 , H01J37/32788 , H01J37/32816 , Y10T29/49764 , Y10T29/49815 , Y10T29/49817 , Y10T29/49822
摘要： A method for dechucking a substrate from an electrostatic chuck (ESC) in a plasma processing system is provided. The method includes flowing a first gas into a plasma chamber. The method also includes flowing a second gas to a backside of the substrate to create a high pressure buildup of the second gas under the backside. The method further includes reducing a flow of the second gas such that at least a portion is trapped under the substrate backside. The method yet also includes pumping out the plasma chamber to increase a pressure differential between a first pressure that exists under the backside of the substrate and a second pressure that exists in a region above the substrate, wherein the pressure differential enables the substrate to be lifted from the ESC. The method yet also includes removing the substrate from the ESC.
摘要翻译：提供了一种用于在等离子体处理系统中从静电卡盘（ESC）去除基板的方法。该方法包括使第一气体流入等离子体室。该方法还包括将第二气体流动到衬底的背面，以产生第二气体在背面下方的高压累积。该方法还包括减少第二气体的流动，使得至少一部分被捕获在衬底背面下方。该方法还包括泵出等离子体室以增加存在于衬底背面的第一压力与存在于衬底上方的区域中的第二压力之间的压力差，其中压力差使衬底能够被提升从ESC。该方法还包括从ESC去除衬底。

4. 发明申请

WO2010036707A3 ADJUSTABLE THERMAL CONTACT BETWEEN AN ELECTROSTATIC CHUCK AND A HOT EDGE RING BY CLOCKING A COUPLING RING 审中-公开
标题翻译：通过连接环绕静电卡盘和热边缘环之间可调节的热接触
公开(公告)号：WO2010036707A3
公开(公告)日：2010-07-01
申请号：PCT/US2009058034
申请日：2009-09-23
申请人： LAM RES CORP , POVOLNY HENRY S , FISCHER ANDREAS
发明人： POVOLNY HENRY S , FISCHER ANDREAS
IPC分类号： H01L21/368 , H01L21/687 , H05H1/34
CPC分类号： H01L21/67103 , H01J37/32642 , H01J37/32715 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/6831 , Y10T279/23 , Y10T403/21
摘要： A clockable device for use with an electrostatic chuck configured to hold a substrate in a plasma environment is disclosed. The clockable device comprises a first portion of the electrostatic chuck having at least one face with variable thermal contact areas located thereon. A second portion of the electrostatic chuck has at least one face with variable thermal contact areas located thereon. The at least one face of the second portion is configured to be placed in thermal contact with the at least one face of the first portion to control a thermal gradient across a face of the substrate.
摘要翻译：公开了一种与静电卡盘一起使用的可定时装置，该静电卡盘构造成将基板保持在等离子体环境中。可计时装置包括具有位于其上的可变热接触区域的至少一个面的静电卡盘的第一部分。静电卡盘的第二部分具有位于其上的可变热接触区域的至少一个面。第二部分的至少一个面构造成与第一部分的至少一个表面热接触，以控制横跨衬底的表面的热梯度。

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