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1. 发明申请

WO2007040958A2 ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME 审中-公开
标题翻译：具有变化厚度，型材和/或形状的电介质材料和/或孔的静电块组件，使用方法和装置
公开(公告)号：WO2007040958A2
公开(公告)日：2007-04-12
申请号：PCT/US2006036110
申请日：2006-09-15
申请人： LAM RES CORP , DHINDSA RAJINDER , LENZ ERIC , LI LUMIN , KOZAKEVICH FELIX
发明人： DHINDSA RAJINDER , LENZ ERIC , LI LUMIN , KOZAKEVICH FELIX
IPC分类号： H01T23/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity can be located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.
摘要翻译：公开了具有介电材料和/或具有变化的厚度，型材和/或形状的空腔的静电卡盘组件。静电卡盘组件包括导电支架和静电卡盘陶瓷层。电介质层或插入件位于导电支架和静电卡盘陶瓷层之间。空腔可以位于静电卡盘陶瓷层的就座表面中。嵌入式极图可以可选地并入静电卡盘组件中。公开了制造静电卡盘组件的方法，是在等离子体处理过程中改进工件上方的磁通场的均匀性的方法。

2. 发明申请

WO2005020264A2 MULTIPLE FREQUENCY PLASMA ETCH REACTOR 审中-公开
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：WO2005020264A2
公开(公告)日：2005-03-03
申请号：PCT/US2004027064
申请日：2004-08-20
申请人： LAM RES CORP , DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
发明人： DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
IPC分类号： H01J37/32 , H01J
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。腔室包括中心顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或者通过将至少一个等离子体激发频率传递到排除另一个等离子体激发频率的滤波器装置连接到参考电位频率。

3. 发明专利

IL205779A APPARATUS FOR PRODUCING HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 未知
公开(公告)号：IL205779A
公开(公告)日：2011-08-31
申请号：IL20577910
申请日：2010-05-13
申请人： LI LUMIN , LAM RES CORP , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
发明人： LI LUMIN , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

4. 发明专利

IL173861A HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 未知
公开(公告)号：IL173861A
公开(公告)日：2010-11-30
申请号：IL17386106
申请日：2006-02-21
申请人： LI LUMIN , LAM RES CORP , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
发明人： LI LUMIN , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

5. 发明申请

WO2007078572A3 APPARATUS AND METHOD FOR CONTROLLING PLASMA DENSITY PROFILE 审中-公开
标题翻译：控制等离子体密度分布的装置和方法
公开(公告)号：WO2007078572A3
公开(公告)日：2009-02-05
申请号：PCT/US2006046780
申请日：2006-12-08
申请人： LAM RES CORP , DHINDSA RAJINDER , KOZAKEVICH FELIX , LI LUMIN , TRUSSELL DAVE
发明人： DHINDSA RAJINDER , KOZAKEVICH FELIX , LI LUMIN , TRUSSELL DAVE
IPC分类号： H01L21/683
CPC分类号： H01J37/32082 , H01J37/32174
摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.
摘要翻译：多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。多个调谐元件分别设置在RF功率传输路径的数量内。每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

6. 发明申请

WO2005022623B1 HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 审中-公开
标题翻译：使用各种频率的RF功率的调制的高比例比较
公开(公告)号：WO2005022623B1
公开(公告)日：2005-05-26
申请号：PCT/US2004025406
申请日：2004-08-06
申请人： LAM RES CORP , RUSU CAMELIA , DHINDSA RAJINDER , HUDSON ERIC A , SRINIVASAN MUKUND , LI LUMIN , KOZAKEVICH FELIX
发明人： RUSU CAMELIA , DHINDSA RAJINDER , HUDSON ERIC A , SRINIVASAN MUKUND , LI LUMIN , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).
摘要翻译：提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。衬底被放置在处理室中，处理室能够提供第一频率的RF功率，不同于第一频率的第二频率以及不同于第一和第二频率的第三频率。向处理室提供蚀刻剂气体（408）。提供第一蚀刻步骤（412），其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。提供第二蚀刻步骤（416），其中第一频率，第二频率和第三频率处于不同的功率设置。可选地，还可以提供第三蚀刻步骤（420）。

7. 发明申请

WO2005001877B1 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 审中-公开
标题翻译：机械等离子体磁化强化
公开(公告)号：WO2005001877B1
公开(公告)日：2008-05-02
申请号：PCT/US2004018557
申请日：2004-06-10
申请人： LAM RES CORP , KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
发明人： KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理衬底的等离子体处理装置。提供了具有室壁的等离子体处理室。在室壁内提供衬底支撑件。提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

8. 发明申请

WO2008008259A2 APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
标题翻译：用于控制等离子体潜能的装置和方法
公开(公告)号：WO2008008259A2
公开(公告)日：2008-01-17
申请号：PCT/US2007015509
申请日：2007-07-06
申请人： LAM RES CORP , KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
发明人： KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。上电极设置在下电极的上方，并与腔电隔离。电压源连接到上电极。电压源被定义为控制上电极相对于腔室的电位。由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

9. 发明申请

WO2005001877A3 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 审中-公开
标题翻译：磁场强化对等离子体机械约束的影响
公开(公告)号：WO2005001877A3
公开(公告)日：2005-03-31
申请号：PCT/US2004018557
申请日：2004-06-10
申请人： LAM RES CORP , KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
发明人： KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理基板的等离子体处理装置。提供具有室壁的等离子体处理室。衬底支架设置在室壁内。提供至少一个约束环，其中约束环和衬底支撑件限定等离子体体积。提供了用于产生用于磁性增强由至少一个约束环提供的物理限制的磁场的磁源。

10. 发明申请

WO03015123B1 DUAL FREQUENCY PLASMA ETCH REACTOR WITH INDEPENDENT PLASMA DENSITY/CHEMISTRY AND ION ENERGY CONTROL 审中-公开
标题翻译：具有独立等离子体密度/化学和离子能量控制的双频等离子体蚀刻反应器
公开(公告)号：WO03015123B1
公开(公告)日：2003-11-20
申请号：PCT/US0225223
申请日：2002-08-08
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND , LENZ ERIC , LI LUMIN
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , LENZ ERIC , LI LUMIN
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , H01J37/32082 , Y10S156/916
摘要： A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources, The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.
摘要翻译：用于处理工件的真空等离子体室包括用于与腔室中的气体电耦合并分别连接到第一和第二相对较高和低频RF源的第一和第二电极。腔室包括参考电位的壁和等离子体限制区域与墙壁隔开。连接到源极和电极的滤波器装置使来自第一源的电流流向第一电极，防止电流从第一电源到第二电极和第二电源的大量流动，并使电流从第二电源到流到第一和第二电极并且防止电流从第二源到第一源的实质性流动。

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