专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005001877B1 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 审中-公开
标题翻译：机械等离子体磁化强化
公开(公告)号：WO2005001877B1
公开(公告)日：2008-05-02
申请号：PCT/US2004018557
申请日：2004-06-10
申请人： LAM RES CORP , KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
发明人： KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理衬底的等离子体处理装置。提供了具有室壁的等离子体处理室。在室壁内提供衬底支撑件。提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

2. 发明申请

WO2008008259A2 APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
标题翻译：用于控制等离子体潜能的装置和方法
公开(公告)号：WO2008008259A2
公开(公告)日：2008-01-17
申请号：PCT/US2007015509
申请日：2007-07-06
申请人： LAM RES CORP , KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
发明人： KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。上电极设置在下电极的上方，并与腔电隔离。电压源连接到上电极。电压源被定义为控制上电极相对于腔室的电位。由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

3. 发明申请

WO2005001877A3 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 审中-公开
标题翻译：磁场强化对等离子体机械约束的影响
公开(公告)号：WO2005001877A3
公开(公告)日：2005-03-31
申请号：PCT/US2004018557
申请日：2004-06-10
申请人： LAM RES CORP , KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
发明人： KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理基板的等离子体处理装置。提供具有室壁的等离子体处理室。衬底支架设置在室壁内。提供至少一个约束环，其中约束环和衬底支撑件限定等离子体体积。提供了用于产生用于磁性增强由至少一个约束环提供的物理限制的磁场的磁源。

4. 发明申请

WO2005112093A3 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 审中-公开
标题翻译：具有快速气体切换能力的气体分配系统
公开(公告)号：WO2005112093A3
公开(公告)日：2007-01-11
申请号：PCT/US2005013582
申请日：2005-04-22
申请人： LAM RES CORP , HUANG ZHISONG , SAM JOSE TONG , LENZ ERIC , DHINDSA RAJINDER , SADJADI REZA
发明人： HUANG ZHISONG , SAM JOSE TONG , LENZ ERIC , DHINDSA RAJINDER , SADJADI REZA
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于向诸如等离子体处理装置的等离子体处理室之类的室提供不同气体组成的气体分配系统。气体分配系统可以包括气体供应部，流量控制部和切换部。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括可操作以快速打开和关闭的快速切换阀，以允许第一和第二气体的快速切换，优选地，在任一种气体的流动中不会出现不期望的压力波动或流动不稳定性。

5. 发明专利

IL190716A METHOD FOR PLASMA ETCHING 未知
公开(公告)号：IL190716A
公开(公告)日：2011-07-31
申请号：IL19071608
申请日：2008-04-08
申请人： LAM RES CORP , LI LUMIN , HUANG ZHISONG , SADJADI REZA
发明人： LI LUMIN , HUANG ZHISONG , SADJADI REZA
IPC分类号： H01L21/311 , H01L21/768

6. 发明专利

AU2003282718A8 A method for plasma etching performance enhancement 未知
公开(公告)号：AU2003282718A8
公开(公告)日：2004-05-04
申请号：AU2003282718
申请日：2003-10-06
申请人： LI LUMIN , SADJADI REZA , LAM RES CORP
发明人： HUANG ZHISONG , SADJADI REZA
IPC分类号： H01L21/311 , H01L21/768 , H01L21/00
摘要： A method for forming a dual damascene feature is provided. Vias are formed in an etch layer. A trench patterned mask is provided over the etch layer. A trench is etched, where the etching the trench comprises a cycle of forming protective sidewalls over the sidewalls of the vias and etching a trench through the trench patterned mask. The mask is then stripped.

7. 发明专利

IL167935A METHOD FOR PLASMA ETCHING 未知
公开(公告)号：IL167935A
公开(公告)日：2009-12-24
申请号：IL16793505
申请日：2005-04-10
申请人： LAM RES CORP , LI LUMIN , HUANG ZHISONG , SADJADI REZA
发明人： LI LUMIN , HUANG ZHISONG , SADJADI REZA
IPC分类号： H01L21/311 , H01L21/768

8. 发明专利

IL179695A METHOD FOR PLASMA STRIPPING USING PERIODIC MODULATION OF GAS CHEMISTRY AND HYDROCARBON ADDITION 未知
公开(公告)号：IL179695A
公开(公告)日：2011-08-31
申请号：IL17969506
申请日：2006-11-29
申请人： LAM RES CORP , WILCOXSON MARK HENRY , SADJADI REZA , HUDSON ERIC A , TIETZ JAMES V , YUN SEOKMIN , ZHU JI , CIRIGLIANO PETER , LEE SANGHEON , CHOI THOMAS S , LOEWENHARDT PETER
发明人： WILCOXSON MARK HENRY , SADJADI REZA , HUDSON ERIC A , TIETZ JAMES V , YUN SEOKMIN , ZHU JI , CIRIGLIANO PETER , LEE SANGHEON , CHOI THOMAS S , LOEWENHARDT PETER
IPC分类号： G03F7/42 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

9. 发明申请

WO2006074050A3 ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA 审中-公开
标题翻译：电动增强等离子体的浓度
公开(公告)号：WO2006074050A3
公开(公告)日：2007-04-19
申请号：PCT/US2005047385
申请日：2005-12-29
申请人： LAM REASEARCH CORP , KUTHI ANDRAS , KIM JISOO , LENZ ERIC , DHINDSA RAJINDAR , LI LUMIN , SADJADI REZA
发明人： KUTHI ANDRAS , KIM JISOO , LENZ ERIC , DHINDSA RAJINDAR , LI LUMIN , SADJADI REZA
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

10. 发明专利

IL186729A METHOD FOR RESIST STRIP IN PRESENCE OF REGULAR LOW K AND/OR POROUS LOW K DIELECTRIC MATERIALS 未知
公开(公告)号：IL186729A
公开(公告)日：2012-06-28
申请号：IL18672907
申请日：2007-10-17
申请人： LAM RES CORP , SADJADI REZA , ZHU HELEN
发明人： SADJADI REZA , ZHU HELEN
摘要： A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式