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1. 发明申请

WO2006107495A1 ETCH PROFILE CONTROL 审中-公开
标题翻译： ETCH简档控制
公开(公告)号：WO2006107495A1
公开(公告)日：2006-10-12
申请号：PCT/US2006/008302
申请日：2006-03-07
申请人： LAM RESEARCH CORPORATION , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric, A. , EPPLER, Aaron
发明人： RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric, A. , EPPLER, Aaron
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
摘要翻译：提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。将基板放置在等离子体处理室中。包含O 2和包含至少一种H2S的硫成分气体的蚀刻剂气体和含有至少一个碳硫键的化合物被提供到等离子体室中。等离子体由蚀刻剂气体形成。通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

2. 发明申请

WO2005020264A2 MULTIPLE FREQUENCY PLASMA ETCH REACTOR 审中-公开
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：WO2005020264A2
公开(公告)日：2005-03-03
申请号：PCT/US2004027064
申请日：2004-08-20
申请人： LAM RES CORP , DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
发明人： DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
IPC分类号： H01J37/32 , H01J
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。腔室包括中心顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或者通过将至少一个等离子体激发频率传递到排除另一个等离子体激发频率的滤波器装置连接到参考电位频率。

3. 发明申请

WO0231859A3 STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY 审中-公开
标题翻译：用于等离子体加工均质的梯级上电极
公开(公告)号：WO0231859A3
公开(公告)日：2002-09-12
申请号：PCT/US0142611
申请日：2001-10-10
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND , EPPLER AARON , LENZ ERIC
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , EPPLER AARON , LENZ ERIC
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32009 , H01J37/3244 , Y10T156/10
摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
摘要翻译：一种具有前表面的等离子体放电电极，其中心部分包括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。可以改变下部电极上的台阶和相应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

4. 发明申请

WO2003107410A3 PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS 审中-公开
公开(公告)号：WO2003107410A3
公开(公告)日：2003-12-24
申请号：PCT/US2003/018791
申请日：2003-06-13
申请人： LAM RESEARCH CORPORATION , EPPLER, Aaron , SRINIVASAN, Mukund , CHEBI, Robert
发明人： EPPLER, Aaron , SRINIVASAN, Mukund , CHEBI, Robert
IPC分类号： H01L21/311
摘要： A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x 1, y 1, and z 0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x 1 and y 4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.

5. 发明申请

WO2006049736A1 ETCHING METHOD INCLUDING PHOTORESIST PLASMA CONDITIONING STEP WITH HYDROGEN FLOW RATE RAMPING 审中-公开
标题翻译：蚀刻方法，其中包括具有氢气流速波动的光电子等离子体调节步骤
公开(公告)号：WO2006049736A1
公开(公告)日：2006-05-11
申请号：PCT/US2005/034172
申请日：2005-09-23
申请人： LAM RESEARCH CORPORATION , KANARIK, Keren, Jacobs , EPPLER, Aaron
发明人： KANARIK, Keren, Jacobs , EPPLER, Aaron
IPC分类号： G03F7/40 , H01L21/027 , H01L21/311
CPC分类号： H01L21/0276 , H01L21/31116
摘要： A method for etching a feature in an etch layer (208) through a photoresist mask (212) over a substrate (204) is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma so as to harden the photoresist (214). The conditioning plasma is stopped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer (208) with the etch plasma.
摘要翻译：提供了一种用于通过衬底（204）上的光致抗蚀剂掩模（212）蚀刻蚀刻层（208）中的特征的方法。将具有设置在光致抗蚀剂掩模下方的蚀刻层的衬底放置在处理室中。对光致抗蚀剂掩模进行调节，其中调节装置包括提供调节气体，该调节气体包括具有流速的含氢气体和至处理室的流速的碳氟化合物和氢氟烃中的至少一种; 并使调节气体通电以形成调理等离子体，从而使光致抗蚀剂（214）硬化。调理等离子体停止。蚀刻等离子体被提供到处理室，其中蚀刻等离子体不同于调节等离子体。蚀刻等离子体在蚀刻层（208）中蚀刻特征。

6. 发明申请

WO0231859A9 STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY 审中-公开
标题翻译：用于等离子体加工均质的梯级上电极
公开(公告)号：WO0231859A9
公开(公告)日：2003-05-22
申请号：PCT/US0142611
申请日：2001-10-10
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND , EPPLER AARON , LENZ ERIC
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , EPPLER AARON , LENZ ERIC
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32009 , H01J37/3244 , Y10T156/10
摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
摘要翻译：一种具有前表面的等离子体放电电极，其中心部分包括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。可以改变下部电极上的台阶和相应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

7. 发明申请

WO2008137670A1 HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN 审中-公开
标题翻译： HARDMASK打开和调试配置控制与HARDMASK开放
公开(公告)号：WO2008137670A1
公开(公告)日：2008-11-13
申请号：PCT/US2008/062411
申请日：2008-05-02
申请人： LAM RESEARCH CORPORATION , LEE, Jong Pil , KAWAGUCHI, Seiji , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric , EPPLER, Aaron
发明人： LEE, Jong Pil , KAWAGUCHI, Seiji , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric , EPPLER, Aaron
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/31122
摘要： A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O 2 .
摘要翻译：提供了一种用于打开形成在衬底上的蚀刻层上的碳基硬掩模层的方法。硬掩模层设置在图案化掩模下方。将基板放置在等离子体处理室中。通过将包括COS成分的硬掩模开口气体流入等离子体室来打开硬掩模层，从硬掩模开口气体形成等离子体，并阻止硬掩模开口气体的流动。硬掩模层可以由无定形碳制成，或由旋涂碳制成，并且硬掩模开口气体可以进一步包括O 2。

8. 发明申请

WO2005031835A1 ETCH WITH RAMPING 审中-公开
标题翻译： ETCH与RAMPING
公开(公告)号：WO2005031835A1
公开(公告)日：2005-04-07
申请号：PCT/US2004/030338
申请日：2004-09-15
申请人： LAM RESEARCH CORPORATION , JACOBS, Keren , EPPLER, Aaron
发明人： JACOBS, Keren , EPPLER, Aaron
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01L21/31116
摘要： A method for etching a feature in an etch layer through a mask over a substrate. The substrate is placed in a process chamber. An etch plasma is provided to the process chamber, where the etch plasma begins to etch. A feature is etched in the etch layer with the etch plasma. At least one etch plasma parameter is ramped during the etching of the feature to optimize plasma parameters with the changing etch depth and the feature is etched with the ramped plasma until the feature is etched to a feature depth.
摘要翻译：一种用于通过衬底上的掩模蚀刻蚀刻层中的特征的方法。将基板放置在处理室中。将蚀刻等离子体提供给处理室，其中蚀刻等离子体开始蚀刻。蚀刻等离子体在蚀刻层中蚀刻特征。在蚀刻特征期间，至少一个蚀刻等离子体参数被斜坡化，以改变蚀刻深度来优化等离子体参数，并且利用斜坡等离子体蚀刻特征，直到特征被蚀刻到特征深度。

9. 发明申请

WO2005020264A3 MULTIPLE FREQUENCY PLASMA ETCH REACTOR 审中-公开
公开(公告)号：WO2005020264A3
公开(公告)日：2005-03-03
申请号：PCT/US2004/027064
申请日：2004-08-20
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , SADJADI, Reza, S., M. , KOZAKEVICH, Felix , TRUSSELL, Dave , LI, Lumin , LENZ, Eric , RUSU, Camelia , SRINIVASAN, Mukund , EPPLER, Aaron , TIETZ, Jim , MARKS, Jeffrey
发明人： DHINDSA, Rajinder , SADJADI, Reza, S., M. , KOZAKEVICH, Felix , TRUSSELL, Dave , LI, Lumin , LENZ, Eric , RUSU, Camelia , SRINIVASAN, Mukund , EPPLER, Aaron , TIETZ, Jim , MARKS, Jeffrey
IPC分类号： H01L21/311
摘要： A workpiece (18) is processed with a plasma (8) in a vacuum plasma processing chamber (10) by exciting the plasma at several frequencies (51, 52, 54, 56, 58), such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes top central (14, 36, 36a) and bottom electrodes (13, 16) and a peripheral top (42) and/or bottom electrode (34) arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies. Controller 24 is employed to direct parameter control of various motors (M), valves (V), frequencies (58), power (59), temperature control means (25, 45) and set points (50).

10. 发明申请

WO2003107410A2 PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS 审中-公开
标题翻译：用于蚀刻电阻膜和/或蚀刻轮廓特性的方法
公开(公告)号：WO2003107410A2
公开(公告)日：2003-12-24
申请号：PCT/US2003/018791
申请日：2003-06-13
申请人： LAM RESEARCH CORPORATION , EPPLER, Aaron , SRINIVASAN, Mukund , CHEBI, Robert
发明人： EPPLER, Aaron , SRINIVASAN, Mukund , CHEBI, Robert
IPC分类号： H01L21/311
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x 1, y 1, and z 0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x 1 and y 4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.
摘要翻译：蚀刻电介质层中的开口的过程包括在等离子体蚀刻反应器中支撑半导体衬底，所述衬底在电介质层上方具有电介质层和图案化的光致抗蚀剂和/或硬掩模层; 向等离子体蚀刻反应器供应包括（a）碳氟化合物气体（CxFyHz，其中x 1，y 1和z 0）的蚀刻剂气体，（b）含硅烷的气体，氢气或烃气体（CxHy，其中x 1和y 4），（c）任选的含氧气体，和（d）任选的惰性气体，其中含硅烷气体与氟碳化合物气体的流量比小于或等于0.1，氢气或碳氢化合物气体与碳氟化合物气体的比率小于或等于0.5; 将蚀刻剂气体激发成等离子体; 以及具有增强的光致抗蚀剂/硬掩模的电介质层中的等离子体蚀刻开口至介电层选择性和/或最小的光致抗蚀剂失真或条纹。

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