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1. 发明申请

WO0137311A3 METHOD AND APPARATUS FOR CONTROLLING THE VOLUME OF A PLASMA 审中-公开
标题翻译：用于控制等离子体积的方法和装置
公开(公告)号：WO0137311A3
公开(公告)日：2001-10-11
申请号：PCT/US0042158
申请日：2000-11-14
申请人： LAM RES CORP , BAILEY ANDREW D III , SCHOEPP ALAN M , BRIGHT NICOLAS
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , BRIGHT NICOLAS
IPC分类号： H05H1/46 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32688
摘要： A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.
摘要翻译：公开了一种等离子体限制装置，用于在使用等离子体增强过程处理处理室内的衬底的同时控制等离子体的体积。该装置包括具有多个第一磁性元件的第一磁性桶。第一磁性元件被配置用于在处理室内产生第一磁场。该装置还包括具有多个第二磁性元件的第二磁性桶。第二磁性元件构造成用于在处理室内产生第二磁场。第二磁场被配置为与第一磁场组合以在第一磁性铲斗和第二磁性铲斗之间产生合成的磁场。所得到的磁场被配置为允许来自处理的副产物气体通过，同时基本上将等离子体限制在至少由处理室限定的体积和所得的磁场中。

2. 发明申请

WO0145134A2 METHOD AND APPARATUS FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
标题翻译：用于生产统一过程速率的方法和装置
公开(公告)号：WO0145134A2
公开(公告)日：2001-06-21
申请号：PCT/US0042174
申请日：2000-11-14
申请人： LAM RES CORP , BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065 , H01J37/00
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译：公开了一种用等离子体处理衬底的等离子体处理装置。该装置包括具有第一RF频率的第一RF电源和处理室。此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。第一对同心环和第二对同心环彼此基本相同和对称地对准。大致圆形天线在处理室内形成方位对称等离子体。该装置还包括设置在天线和处理室之间的耦合窗口。耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。耦合窗具有第一层和第二层。第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

3. 发明申请

WO0145134A9 METHOD AND APPARATUS FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
标题翻译：用于生产统一过程速率的方法和装置
公开(公告)号：WO0145134A9
公开(公告)日：2002-11-14
申请号：PCT/US0042174
申请日：2000-11-14
申请人： LAM RES CORP , BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译：公开了一种用等离子体处理衬底的等离子体处理装置。该装置包括具有第一RF频率的第一RF电源和处理室。此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。第一对同心环和第二对同心环彼此基本相同和对称地对准。大致圆形天线在处理室内形成方位对称等离子体。该装置还包括设置在天线和处理室之间的耦合窗口。耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。耦合窗具有第一层和第二层。第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

4. 发明申请

WO2012166727A3 SUBSTRATE FREEZE DRY APPARATUS AND METHOD 审中-公开
标题翻译：基材冷冻干燥装置和方法
公开(公告)号：WO2012166727A3
公开(公告)日：2013-05-10
申请号：PCT/US2012039855
申请日：2012-05-29
申请人： LAM RES CORP , SIRARD STEPHEN M , HYMES DIANE , SCHOEPP ALAN M
发明人： SIRARD STEPHEN M , HYMES DIANE , SCHOEPP ALAN M
IPC分类号： H01L21/302
CPC分类号： H01L21/02057 , H01L21/67034 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L21/6831
摘要： An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.
摘要翻译：提供一种用于冷冻干燥基材的装置。提供了用于接收基板的室。用于支撑和静电夹持衬底的静电吸盘（ESC）在腔室内。温度控制器控制静电卡盘的温度。冷凝器连接到腔室。真空泵与腔室流体连接。

5. 发明公开

KR20200141532A 텔레센트릭 (tele-centric) 렌즈, 광학 빔 폴딩 어셈블리, 또는 다각형 스캐너를 갖는 렌즈 회로를 포함하는 원자 층 에칭 및 증착 프로세싱 시스템들 审中-公开
公开(公告)号：KR20200141532A
公开(公告)日：2020-12-18
申请号：KR20207035377
申请日：2019-05-02
申请人： LAM RES CORP
发明人： PAENG DONGWOO , KIM YUNSANG S , ZHANG HE , WELLS KEITH , SCHOEPP ALAN M
IPC分类号： H01L21/67 , H01L21/683 , H01S3/00
摘要： 기판프로세싱시스템이프로세싱챔버, 기판지지부, 레이저, 및시준어셈블리를포함한다. 기판지지부는프로세싱챔버내에배치되고, 기판을지지하도록구성된다. 레이저는레이저빔을생성하도록구성된다. 시준어셈블리는기판의노출된재료를가열하기위해기판에서레이저빔을지향시키도록배열된렌즈들또는미러들 (mirrors) 을포함한다. 렌즈들또는미러들은기판의표면에수직인미리결정된범위내의방향으로레이저빔을지향시키도록구성된다.

6. 发明申请

WO9967808A9 HIGH SPUTTER, ETCH RESISTANT WINDOW FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：高速喷雾器，等离子体加工釜的耐蚀窗口
公开(公告)号：WO9967808A9
公开(公告)日：2000-11-02
申请号：PCT/US9914069
申请日：1999-06-22
申请人： LAM RES CORP
发明人： HOWALD ARTHUR M , CHEN ANTHONY L , SCHOEPP ALAN M
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32467 , H01J37/321 , H01J37/32477
摘要： A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.
摘要翻译：等离子体处理室的窗口。窗口包括具有第一电气厚度和形成在等离子体处理室内的蚀刻等离子体的第一电阻率的第一电介质部分。还包括设置在第一电介质部分内的第二电介质部分。第二电介质部分具有小于第一电气厚度的第二电气厚度。第二电介质部分由基本上透明的材料形成，并且对蚀刻等离子体具有第二电阻率。第二电阻率高于第一电阻率。

7. 发明申请

WO0019495A3 CHAMBER LINER FOR SEMICONDUCTOR PROCESS CHAMBERS 审中-公开
标题翻译：用于半导体加工室的腔室衬里
公开(公告)号：WO0019495A3
公开(公告)日：2000-05-25
申请号：PCT/US9922488
申请日：1999-09-28
申请人： LAM RES CORP
发明人： SCHOEPP ALAN M , DENTY WILLIAM M JR , BARNES MICHAEL
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32495 , Y10S156/916
摘要： A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner (116) has a plasma confinement shield (116c) with a plurality of apertures (116e). An outer sidewall (116b) extends upwardly from the plasma confinement shield (116c). An outer flange (116a) extends outwardly from the outer sidewall (116b) such that the outer flange (116a) extends beyond the chamber and into a space at atmospheric pressure. The chamber liner (116) preferably further includes an inner sidewall (116d) that extends upwardly from the plasma confinement shield (116c). The plasma confinement shield (116c), the inner and outer sidewalls (116d and 116b, respectively), and the outer flange (116a) are preferably integral with one another.
摘要翻译：公开了用于半导体处理室和包含室衬的半导体处理室的室衬。处理室包括壳体，该壳体具有限定腔室的内表面，在处理半导体晶片期间真空被吸入其中。室衬（116）具有带有多个孔（116e）的等离子约束屏蔽（116c）。外侧壁（116b）从等离子体约束屏障（116c）向上延伸。外凸缘（116a）从外侧壁（116b）向外延伸，使得外凸缘（116a）延伸超过腔室并进入大气压力下的空间。腔室衬垫（116）优选地还包括从等离子体限制护罩（116c）向上延伸的内侧壁（116d）。等离子体约束屏障（116c），内侧壁和外侧壁（分别为116d和116b）和外凸缘（116a）优选彼此一体化。

8. 发明专利

AU1606101A Materials and gas chemistries for processing systems 未知
公开(公告)号：AU1606101A
公开(公告)日：2001-05-30
申请号：AU1606101
申请日：2000-11-14
申请人： LAM RES CORP
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , HEMKER DAVID J , WILCOXSON MARK H
IPC分类号： C23C16/507 , B05D7/24 , H01J37/32 , H01L21/3065
摘要： A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

9. 发明专利

DE60038811D1 未知
公开(公告)号：DE60038811D1
公开(公告)日：2008-06-19
申请号：DE60038811
申请日：2000-11-14
申请人： LAM RES CORP
发明人： BAILEY ANDREW D , SCHOEPP ALAN M , HEMKER DAVID J , WILCOXSON MARK H
IPC分类号： C23C16/507 , H01J37/32 , B05D7/24 , H01L21/3065
摘要： A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

10. 发明专利

AU3082201A Method and apparatus for controlling the volume of a plasma 未知
公开(公告)号：AU3082201A
公开(公告)日：2001-05-30
申请号：AU3082201
申请日：2000-11-14
申请人： LAM RES CORP
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , BRIGHT NICOLAS
IPC分类号： H05H1/46 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/3065 , H01J37/00
摘要： A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

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