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1. 发明申请

WO0137311A3 METHOD AND APPARATUS FOR CONTROLLING THE VOLUME OF A PLASMA 审中-公开
标题翻译：用于控制等离子体积的方法和装置
公开(公告)号：WO0137311A3
公开(公告)日：2001-10-11
申请号：PCT/US0042158
申请日：2000-11-14
申请人： LAM RES CORP , BAILEY ANDREW D III , SCHOEPP ALAN M , BRIGHT NICOLAS
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , BRIGHT NICOLAS
IPC分类号： H05H1/46 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32688
摘要： A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.
摘要翻译：公开了一种等离子体限制装置，用于在使用等离子体增强过程处理处理室内的衬底的同时控制等离子体的体积。该装置包括具有多个第一磁性元件的第一磁性桶。第一磁性元件被配置用于在处理室内产生第一磁场。该装置还包括具有多个第二磁性元件的第二磁性桶。第二磁性元件构造成用于在处理室内产生第二磁场。第二磁场被配置为与第一磁场组合以在第一磁性铲斗和第二磁性铲斗之间产生合成的磁场。所得到的磁场被配置为允许来自处理的副产物气体通过，同时基本上将等离子体限制在至少由处理室限定的体积和所得的磁场中。

2. 发明申请

WO0145134A2 METHOD AND APPARATUS FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
标题翻译：用于生产统一过程速率的方法和装置
公开(公告)号：WO0145134A2
公开(公告)日：2001-06-21
申请号：PCT/US0042174
申请日：2000-11-14
申请人： LAM RES CORP , BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065 , H01J37/00
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译：公开了一种用等离子体处理衬底的等离子体处理装置。该装置包括具有第一RF频率的第一RF电源和处理室。此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。第一对同心环和第二对同心环彼此基本相同和对称地对准。大致圆形天线在处理室内形成方位对称等离子体。该装置还包括设置在天线和处理室之间的耦合窗口。耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。耦合窗具有第一层和第二层。第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

3. 发明申请

WO0145134A9 METHOD AND APPARATUS FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
标题翻译：用于生产统一过程速率的方法和装置
公开(公告)号：WO0145134A9
公开(公告)日：2002-11-14
申请号：PCT/US0042174
申请日：2000-11-14
申请人： LAM RES CORP , BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译：公开了一种用等离子体处理衬底的等离子体处理装置。该装置包括具有第一RF频率的第一RF电源和处理室。此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。第一对同心环和第二对同心环彼此基本相同和对称地对准。大致圆形天线在处理室内形成方位对称等离子体。该装置还包括设置在天线和处理室之间的耦合窗口。耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。耦合窗具有第一层和第二层。第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

4. 发明申请

WO2012018448A3 PLASMA PROCESSING CHAMBER WITH DUAL AXIAL GAS INJECTION AND EXHAUST 审中-公开
标题翻译：具有双轴向气体注射和排气的等离子体处理室
公开(公告)号：WO2012018448A3
公开(公告)日：2012-04-05
申请号：PCT/US2011041522
申请日：2011-06-22
申请人： LAM RES CORP , DHINDSA RAJINDER , MARAKHATNOV ALEXEI , BAILEY ANDREW D III
发明人： DHINDSA RAJINDER , MARAKHATNOV ALEXEI , BAILEY ANDREW D III
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H01L21/3065 , C23C16/4412 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/50 , H01J37/32091 , H01J37/32449 , H01J37/32834 , H01L21/31
摘要： An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.
摘要翻译：电极暴露于等离子体产生体积并且被限定为将射频功率传输至等离子体产生体积，并且包括用于保持暴露于等离子体产生体积的基板的上表面。气体分配单元设置在等离子体产生容积上方并且与电极基本平行地定向。气体分配单元包括用于将等离子体处理气体的输入流在基本上垂直于电极的上表面的方向上引导到等离子体产生体积中的气体供给端口的布置。气体分配单元还包括通孔布置，每个通孔延伸穿过气体分配单元以将等离子体生成体积流体连接到排气区域。通孔中的每一个引导来自等离子体产生体积的排气流在基本上垂直于电极上表面的方向上。

5. 发明申请

WO2008042581A3 OFFSET CORRECTION METHODS AND ARRANGEMENT FOR POSITIONING AND INSPECTING SUBSTRATES 审中-公开
标题翻译：偏移校正方法和定位和检查基板的安排
公开(公告)号：WO2008042581A3
公开(公告)日：2008-10-09
申请号：PCT/US2007078578
申请日：2007-09-14
申请人： LAM RES CORP , CHEN JACK , BAILEY ANDREW D III , MOORING BEN , CAIN STEPHEN J
发明人： CHEN JACK , BAILEY ANDREW D III , MOORING BEN , CAIN STEPHEN J
IPC分类号： G03B15/00 , B08B7/00 , B41B17/00 , G01B11/00 , G01B11/02 , G01N21/00 , G01R31/26 , G03B15/02 , G03B15/03
CPC分类号： H01L21/681 , H01L21/67259 , H01L21/67288
摘要： A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.
摘要翻译：提供了用于捕获衬底图像的斜角检查模块。该模块包括旋转马达，该旋转马达连接到衬底卡盘并且被配置为旋转衬底卡盘从而允许衬底旋转。该模块还包括照相机和光学外壳，该照相机和光学外壳连接到照相机并且被配置成旋转，使得光被引导朝向基板。照相机从照相机安装架安装，照相机安装架被配置成使照相机能够在180度平面上旋转，从而允许照相机捕获衬底的顶视图，底视图和侧视图中的至少一个的图像。该模块还包括背光装置，该背光装置被配置为向基板提供照明，由此使得照相机能够捕捉图像，该图像示出了基板与背景之间的对比。

6. 发明申请

WO2006104842B1 APPARATUS FOR SERVICING A PLASMA PROCESSING SYSTEM WITH A ROBOT 审中-公开
标题翻译：用机器人维修等离子体加工系统的装置
公开(公告)号：WO2006104842B1
公开(公告)日：2008-01-03
申请号：PCT/US2006010577
申请日：2006-03-24
申请人： LAM RES CORP , BAILEY ANDREW D III
发明人： BAILEY ANDREW D III
IPC分类号： B25H1/00
CPC分类号： B25J5/00 , B08B1/00 , B08B9/00 , H01J37/32743 , H01J37/32862 , H01L21/67751 , Y10T29/49723
摘要： A robot apparatus for executing a set of service procedures on a plasma processing system including a docking port is disclosed. The apparatus includes a platform and a docking probe coupled to the platform, wherein the docking probe is configured to dock with the docking port. The apparatus also includes a robot arm coupled to the platform, and further configured to substantially perform the set of service procedures, and a tool coupled to the robot arm. The apparatus further includes a computer coupled to the platform, wherein the computer is further configured to execute the set of service procedures, and wherein when the docking probe is docked to the docking port, the set of service procedures is performed by the tool.
摘要翻译：公开了一种用于在包括对接端口的等离子体处理系统上执行一组服务程序的机器人装置。该装置包括耦合到平台的平台和对接探针，其中对接探针配置成与对接端口对接。该装置还包括联接到平台的机器人臂，并且还被配置为基本上执行该组服务程序，以及联接到机器人手臂的工具。所述装置还包括耦合到所述平台的计算机，其中所述计算机还被配置为执行所述一组服务过程，并且其中当所述对接探针对接到所述对接端口时，所述一组服务过程由所述工具执行。

7. 发明申请

WO2004030084A3 METHOD FOR QUANTIFYING UNIFORMITY PATTERNS AND INCLUSION OF EXPERT KNOWLEDGE FOR TOOL DEVELOPMENT AND CONTROL 审中-公开
标题翻译：量化均匀性模式的方法和包含专家知识的工具开发和控制
公开(公告)号：WO2004030084A3
公开(公告)日：2004-06-24
申请号：PCT/US0330610
申请日：2003-09-24
申请人： LAM RES CORP , BAILEY ANDREW D III , YADAV PUNEET , MISRA PRATIK
发明人： BAILEY ANDREW D III , YADAV PUNEET , MISRA PRATIK
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A system and method of for determining multiple uniformity metrics of a semiconductor wafer manufacturing process includes collecting a quantity across each one of a group of semiconductor wafers. The collected quantity data is scaled and a principal component analysis (PCA) is performed on the collected, scaled quantity data to produce a first set of metrics for the first group of semiconductor wafers. The first set of metrics including a first loads matrix and a first scores matrix.
摘要翻译：用于确定半导体晶片制造工艺的多个均匀性度量的系统和方法包括收集跨越一组半导体晶片中的每一个的数量。收集的数量数据被缩放并且对收集的缩放量数据执行主成分分析（PCA）以产生用于第一组半导体晶片的第一组度量。第一组度量包括第一加载矩阵和第一分数矩阵。

8. 发明申请

WO2007130630A3 METHOD AND APPARATUS FOR ISOLATED BEVEL EDGE CLEAN 审中-公开
标题翻译：用于隔离水边缘清洁的方法和装置
公开(公告)号：WO2007130630A3
公开(公告)日：2008-12-31
申请号：PCT/US2007010929
申请日：2007-05-04
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BAILEY ANDREW D III , JASON A RYDER , WILCOXSON MARK H , GASPARITSCH JEFFREY G , RANDY JOHNSON , HOFFMANN STEPHAN P
发明人： YOON HYUNGSUK ALEXANDER , BAILEY ANDREW D III , JASON A RYDER , WILCOXSON MARK H , GASPARITSCH JEFFREY G , RANDY JOHNSON , HOFFMANN STEPHAN P
IPC分类号： B08B11/02
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译：用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物底物。

9. 发明申请

WO2007038580A3 APPARATUS AND METHODS TO REMOVE FILMS ON BEVEL EDGE AND BACKSIDE OF WAFER 审中-公开
标题翻译：装置和方法去除水平边缘和背面的膜
公开(公告)号：WO2007038580A3
公开(公告)日：2007-08-09
申请号：PCT/US2006037648
申请日：2006-09-26
申请人： LAM RES CORP , KIM YUNSANG , BAILEY ANDREW D III
发明人： KIM YUNSANG , BAILEY ANDREW D III
IPC分类号： H01J37/32
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分布板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。

10. 发明申请

WO2007005211A3 METHODS AND APPARATUS FOR OPTIMIZING AN ELECTRICAL RESPONSE TO A CONDUCTIVE LAYER ON A SUBSTRATE 审中-公开
标题翻译：用于优化对衬底上的导电层的电响应的方法和设备
公开(公告)号：WO2007005211A3
公开(公告)日：2007-05-03
申请号：PCT/US2006023033
申请日：2006-06-13
申请人： LAM RES CORP , BAILEY ANDREW D III
发明人： BAILEY ANDREW D III
IPC分类号： G01R35/00
CPC分类号： G01B7/105 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of determining a first thickness of a first conductive film formed of a first conductive material on a target substrate is disclosed. The method includes positioning a first eddy current sensor near a set of positions on the target substrate. The method also includes measuring, using the first eddy current sensor, a first set of electrical responses that includes at least one of a first voltage measurement and a first current measurement. The method further includes correcting the set of first electrical responses using a temperature-dependent compensation factor, thereby obtaining a corrected first set of electrical responses, the temperature-dependent compensation factor being obtained from a calibration substrate different from the target substrate, the calibration substrate having a second conductive film formed of a second conductive material that is substantially similar to the first conductive material of the target substrate; and determining the first thickness using the corrected first set of electrical responses.
摘要翻译：公开了确定在目标基板上由第一导电材料形成的第一导电膜的第一厚度的方法。该方法包括将第一涡流传感器定位在目标基板上的一组位置附近。该方法还包括使用第一涡流传感器测量包括第一电压测量值和第一电流测量值中的至少一个的第一组电响应。该方法还包括使用取决于温度的补偿因子来校正该组第一电响应，从而获得校正的第一组电响应，取决于温度的补偿因子是从与目标基板不同的校准基板获得的，校准基板具有由与目标衬底的第一导电材料基本相似的第二导电材料形成的第二导电膜; 以及使用经校正的第一组电响应来确定第一厚度。

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