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1. 发明申请

WO2004055855B1 GAS DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM ETCHING 审中-公开
标题翻译：气体分配装置和均匀蚀刻方法
公开(公告)号：WO2004055855B1
公开(公告)日：2005-03-17
申请号：PCT/US0338617
申请日：2003-12-04
申请人： LAM RES CORP , LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
发明人： LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： G05D7/0664 , H01J37/3244 , H01L21/31116
摘要： An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).
摘要翻译：用于向处理室的不同区域提供不同气体的装置包括用于提供蚀刻气体流的气体供应装置（1880）与气体供应流体连接的分流器（1831,1836-1840），用于将来自气体供应源的蚀刻气流分成多个支路（1812,1814,1833,1834）和调谐气体系统（1860-1862），1865至1868）流体连接至所述多个腿（1812,1814）中的至少一个腿。

2. 发明申请

WO0019495A3 CHAMBER LINER FOR SEMICONDUCTOR PROCESS CHAMBERS 审中-公开
标题翻译：用于半导体加工室的腔室衬里
公开(公告)号：WO0019495A3
公开(公告)日：2000-05-25
申请号：PCT/US9922488
申请日：1999-09-28
申请人： LAM RES CORP
发明人： SCHOEPP ALAN M , DENTY WILLIAM M JR , BARNES MICHAEL
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32495 , Y10S156/916
摘要： A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner (116) has a plasma confinement shield (116c) with a plurality of apertures (116e). An outer sidewall (116b) extends upwardly from the plasma confinement shield (116c). An outer flange (116a) extends outwardly from the outer sidewall (116b) such that the outer flange (116a) extends beyond the chamber and into a space at atmospheric pressure. The chamber liner (116) preferably further includes an inner sidewall (116d) that extends upwardly from the plasma confinement shield (116c). The plasma confinement shield (116c), the inner and outer sidewalls (116d and 116b, respectively), and the outer flange (116a) are preferably integral with one another.
摘要翻译：公开了用于半导体处理室和包含室衬的半导体处理室的室衬。处理室包括壳体，该壳体具有限定腔室的内表面，在处理半导体晶片期间真空被吸入其中。室衬（116）具有带有多个孔（116e）的等离子约束屏蔽（116c）。外侧壁（116b）从等离子体约束屏障（116c）向上延伸。外凸缘（116a）从外侧壁（116b）向外延伸，使得外凸缘（116a）延伸超过腔室并进入大气压力下的空间。腔室衬垫（116）优选地还包括从等离子体限制护罩（116c）向上延伸的内侧壁（116d）。等离子体约束屏障（116c），内侧壁和外侧壁（分别为116d和116b）和外凸缘（116a）优选彼此一体化。

3. 发明申请

WO2007008509A3 METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：将气体供应系统的气体流量验证为等离子体加工室的方法
公开(公告)号：WO2007008509A3
公开(公告)日：2009-04-23
申请号：PCT/US2006026095
申请日：2006-07-05
申请人： LAM RES CORP , LARSON DEAN J , HEFTY ROBERT C , TIETZ JAMES V , KENNEDY WILLIAM S , LENZ ERIC H , DENTY WILLIAM M JR , MAGNI ENRICO
发明人： LARSON DEAN J , HEFTY ROBERT C , TIETZ JAMES V , KENNEDY WILLIAM S , LENZ ERIC H , DENTY WILLIAM M JR , MAGNI ENRICO
IPC分类号： G01F25/00
CPC分类号： G01F1/42 , G01F1/36 , G01F25/0007 , G05D7/0652
摘要： Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber (12) are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice.
摘要翻译：提供了一种测量用于向等离子体处理室（12）供应气体的气体供应系统中的气体流量的方法。在差分流动方法中，流量控制器以不同的设定流量运行，并且在环境条件下测量设定流量的上游孔口压力。测量的孔口压力参考二次流量验证方法，该方法为不同的设定流量产生相应的实际气体流速。上游孔压力可以用作在室的任何温度条件下进行的随后的孔口压力测量的差分比较。在绝对流动方法中，预定了所选择的气体和孔口的一些参数，并且在气体以流量控制器以设定流量通过孔口流动时，测量气体的其它参数。

4. 发明申请

WO2004055855A3 GAS DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM ETCHING 审中-公开
标题翻译：气体分布装置和均匀蚀刻的方法
公开(公告)号：WO2004055855A3
公开(公告)日：2005-01-06
申请号：PCT/US0338617
申请日：2003-12-04
申请人： LAM RES CORP , LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
发明人： LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： G05D7/0664 , H01J37/3244 , H01L21/31116
摘要： An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).
摘要翻译：用于向处理室的不同区域提供不同气体的装置包括用于提供蚀刻气体流的气体供应源（1880）与气体供应流体连接的分流器（1831,1836-1840），用于将来自气体供应的蚀刻气体流分解成多个腿部（1812,1814,1833,1834）和调节气体系统（1860-1862），1865-1868）与所述多个腿部（1812,1814）中的至少一个腿流体连接。

5. 发明专利

AU2003293396A8 Gas distribution apparatus and method for uniform etching 未知
公开(公告)号：AU2003293396A8
公开(公告)日：2004-07-09
申请号：AU2003293396
申请日：2003-12-04
申请人： LAM RES CORP
发明人： LARSON DEAN J , DENTY WILLIAM M JR , TAKESHITA KENJI , SU XINGCAI , YEN BI-MING , KADKHODAYAN BABAK , WU DI , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
摘要： An apparatus for providing a gas from a gas supply to at least two different zones in a process chamber is provided. A flow divider provides a fluid connection to the gas supply, where the flow divider splits gas flow from the gas supply into a plurality of legs. A master leg is in fluid connection with the flow divider, where the master leg comprises a master fixed orifice. A first slave leg is in fluid connection with the flow divider and in parallel with the master leg, where the first slave leg comprises a first slave leg valve and a first slave leg fixed orifice.

6. 发明专利

SG177220A1 SHOWERHEAD ELECTRODE ASSEMBLY WITH GAS FLOW MODIFICATION FOR EXTENDED ELECTRODE LIFE 未知
公开(公告)号：SG177220A1
公开(公告)日：2012-01-30
申请号：SG2011093168
申请日：2007-12-17
申请人： LAM RES CORP
发明人： AUGUSTINO JASON , DE LA LLERA ANTHONY , RONNE ALLAN K , KIM JAEHYUN , DHINDSA RAJINDER , WANG YEN-KUN , ULLAL SAURABH J , NORELL ANTHONY J , COMENDANT KEITH , DENTY WILLIAM M JR
摘要： A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Figure 3

7. 发明专利

MY155016A METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER 未知
公开(公告)号：MY155016A
公开(公告)日：2015-08-28
申请号：MYPI20063268
申请日：2006-07-10
申请人： LAM RES CORP
发明人： LARSON DEAN J , HEFTY ROBERT C , TIETZ JAMES V , KENNEDY WILLIAM S , LENZ ERIC H , DENTY WILLIAM M JR , MAGNI ENRICO
IPC分类号： G01F25/00
摘要： METHOD OF MEASURING GAS FLOW RATES IN A GAS SUPPLY SYSTEM (100) FOR SUPPLYING GAS TO A PLASMA PROCESSING CHAMBER (12) ARE PROVIDED. IN A DIFFERENTIAL FLOW METHOD, A FLOW CONTROLLER IS OPERATED AT DIFFERENT SET FLOW RATES, AND UPSTREAM ORIFICE PRESSURES ARE MEASURED FOR THE SET FLOW RATES AT AMBIENT CONDITIONS. THE MEASURED ORIFICE PRESSURE ARE REFERENCED TO A SECONDARY FLOW VERIFICATION METHOD THAT GENERATES CORRESPONDING ACTUAL GAS FLOW RATES FOR THE DIFFERENT SET FLOW RATES. THE UPSTREAM ORIFICE PRESSURES CAN BE USED AS A DIFFERENTIAL COMPARISON FOR SUBSEQUENT ORIFICE PRESSURE MEASUREMENT TAKEN AT ANY TEMPERATURE CONDITION OF THE CHAMBER. IN AN ABSOLUTE FLOW METHOD, SOME PARAMETERS OF A SELECTED GAS AND ORIFICE ARE PREDETERMINED, AND OTHER PARAMETER OF THE GAS ARE MEASURED WHILE THE GAS IS BEING FLOWED FROM A FLOW CONTROLLER SET POINT CAN BE FLOWED AR ANY TIME AND AT ANY CHAMBER CONDITION, SUCH AS DURING PLASMA PROCESSING OPERATION. GAS SUPPLY SYSTEMS (100) ARE ALSO DISCLOSED.

8. 发明专利

AU2003293396A1 UNIFORM ETCH SYSTEM 未知
公开(公告)号：AU2003293396A1
公开(公告)日：2004-07-09
申请号：AU2003293396
申请日：2003-12-04
申请人： LAM RES CORP
发明人： LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
摘要： An apparatus for providing a gas from a gas supply to at least two different zones in a process chamber is provided. A flow divider provides a fluid connection to the gas supply, where the flow divider splits gas flow from the gas supply into a plurality of legs. A master leg is in fluid connection with the flow divider, where the master leg comprises a master fixed orifice. A first slave leg is in fluid connection with the flow divider and in parallel with the master leg, where the first slave leg comprises a first slave leg valve and a first slave leg fixed orifice.

9. 发明专利

AU1198800A Chamber liner for semiconductor process chambers 未知
公开(公告)号：AU1198800A
公开(公告)日：2000-04-17
申请号：AU1198800
申请日：1999-09-28
申请人： LAM RES CORP
发明人： SCHOEPP ALAN M , DENTY WILLIAM M JR , BARNES MICHAEL
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/00
摘要： A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.

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