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1. 发明授权

US6432831B2 Gas distribution apparatus for semiconductor processing 有权
标题翻译：用于半导体加工的气体分配装置
公开(公告)号：US6432831B2
公开(公告)日：2002-08-13
申请号：US81497201
申请日：2001-03-23
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , HAO FANGLI , LENZ ERIC
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , H01J37/32 , H01L21/302
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , H01J37/3244
摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.
摘要翻译：一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。气体分配系统包括固定在一起以在其间限定气体分配室的支撑板和喷头。包括一个或多个挡板的挡板组件位于气体分配室内。挡板装置包括向挡板室的中心部分供应处理气体的第一气体供应源和向挡板室的周边区域供应第二处理气体的第二气体供应源。因为在靠近第一和第二气体供应出口的位置处的气体的压力较大，所以可以使喷头背面的气体压力比单个气体供应的情况更均匀。在一种布置中，第一和第二气体供应开放在顶部挡板和温度控制的支撑构件之间的增压室中，其中气室通过O形环分成中心区域和外围区域。在第二种布置中，第一气体供应通向上挡板上方的中心区域，第二气体供应通道进入上挡板和下挡板之间的集气室的周边。

2. 发明公开

EP2484185A4 UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 审中-公开
标题翻译： VEREINHEITLICHEBESCHRÄNKUNGSRINGANORDNUNGENUND VERFAHRENDAFÜR
公开(公告)号：EP2484185A4
公开(公告)日：2014-07-23
申请号：EP10819603
申请日：2010-09-27
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KALYANARAMAN RAJARAMANAN , MANI SATHYANARAYANAN , BHATTACHARYYA GUATAM
IPC分类号： C23C16/455 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32477 , H01J37/32495 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/32834 , H01J2237/334
摘要： An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.
摘要翻译：一种用于在等离子体处理室中执行压力控制的装置，包括上电极，下电极，单位化约束环装置，其中上电极，下电极和单位化约束环装置至少构成为围绕限制室区域促进等离子体产生和限制。该装置还包括至少一个柱塞，该柱塞构造用于沿垂直方向移动单位化限制环装置以调节第一气体导通路径和第二气体导电路径中的至少一个，以执行压力控制，其中第一气体导电路径形成在上电极和单元化限制环装置之间，并且第二气体导电路径形成在下电极和单一组合环装置之间。

3. 发明公开

EP2460179A4 LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS 审中-公开
标题翻译：点火保护在静电吸盘
公开(公告)号：EP2460179A4
公开(公告)日：2012-06-06
申请号：EP10804865
申请日：2010-06-29
申请人： LAM RES CORP
发明人： STEVENSON TOM , BYUN DANIEL , ULLAL SAURABH , KADKHODAYAN BABAK , DHINDSA RAJINDER
IPC分类号： H01L21/687 , B23Q3/15 , C23C16/458 , H01L21/683 , H02N13/00
CPC分类号： H01L21/68757 , H01J37/32541 , H01J37/3255 , H01L21/67109 , H01L21/6831 , H01L21/6833 , H01L21/6875

4. 发明公开

EP2417625A4 MODULATED MULTI-FREQUENCY PROCESSING METHOD 审中-公开
标题翻译： MODULIERTES MULTIFREQUENZVERARBEITUNGSSYSTEM
公开(公告)号：EP2417625A4
公开(公告)日：2015-12-02
申请号：EP10762274
申请日：2010-04-06
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , HUDSON ERIC , DHINDSA RAJINDER , BAILEY ANDREW
IPC分类号： H01L21/3065 , H01J37/32 , H05H1/24 , H05H1/36
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32137 , H01J37/32146 , H01J2237/334 , H01J2237/3348

5. 发明公开

EP1769101A4 APPARATUS INCLUDING GAS DISTRIBUTION MEMBER SUPPLYING PROCESS GAS AND RADIO FREQUENCY (RF) POWER FOR PLASMA PROCESSING 审中-公开
标题翻译： VORRICHTUNG MIT PROZESSGASZUFÜHRENDEMGASVERTEILERELEMENT UND HOCHFREQUENZSTROMFÜRDIE PLASMAVERARBEITUNG
公开(公告)号：EP1769101A4
公开(公告)日：2010-03-03
申请号：EP05732428
申请日：2005-04-11
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , LENZ ERIC
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J21/36 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32724 , H01L21/306
摘要： A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.
摘要翻译：一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。气体分配构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。

6. 发明公开

EP1993745A4 PLASMA PROCESSING REACTOR WITH MULTIPLE CAPACITIVE AND INDUCTIVE POWER SOURCES 有权
标题翻译：具有多个电容和电感，电源等离子处理反应器
公开(公告)号：EP1993745A4
公开(公告)日：2010-03-17
申请号：EP07751025
申请日：2007-02-15
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER
IPC分类号： B08B6/00 , C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32091 , H01J37/32642 , H01J37/32862

7. 发明公开

EP2417626A4 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
标题翻译：等离子刻蚀与电容式多频率和功率
公开(公告)号：EP2417626A4
公开(公告)日：2014-08-06
申请号：EP10762275
申请日：2010-04-06
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
IPC分类号： H01L21/3065 , C23C16/509 , H01J37/32 , H05H1/34 , H05H1/36
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

8. 发明公开

EP2316253A4 A COMPOSITE SHOWERHEAD ELECTRODE ASSEMBLY FOR A PLASMA PROCESSING APPARATUS 有权
标题翻译： VERBUNDDUSCHKOPFELEKTRODENANORDNUNGFÜREINE PLASMAVERARBEITUNGSVORRICHTUNG
公开(公告)号：EP2316253A4
公开(公告)日：2013-08-07
申请号：EP09806941
申请日：2009-08-06
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER
IPC分类号： H05H1/34 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/265 , H01L21/3065
CPC分类号： H01L21/67069 , C23C16/45565 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32605 , Y10T29/49002 , Y10T29/4913 , Y10T29/49401 , Y10T29/49428 , Y10T29/49769 , Y10T29/49895 , Y10T29/49959 , Y10T156/10
摘要： A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling due to mismatch in coefficients of thermal expansion. The interface gel comprises, for example, a silicone based composite filled with aluminum oxide microspheres. The interface gel can conform to irregularly shaped features and maximize surface contact area between mating surfaces. The interface gel can be pre-applied to a consumable upper electrode.
摘要翻译：用于等离子体处理装置的喷头电极包括在电极板和背板的相对表面之间的界面凝胶。界面凝胶在温度循环期间由于热膨胀系数不匹配而产生的横向位移期间保持导热性。界面凝胶包括例如填充有氧化铝微球的基于硅氧烷的复合材料。界面凝胶可以符合不规则形状的特征并最大化配合表面之间的表面接触面积。界面凝胶可以预先施加到可消耗的上电极上。

9. 发明公开

EP2301309A4 CLAMPED SHOWERHEAD ELECTRODE ASSEMBLY 有权
标题翻译：商定装纸花洒电极装置
公开(公告)号：EP2301309A4
公开(公告)日：2013-07-31
申请号：EP09794804
申请日：2009-07-06
申请人： LAM RES CORP
发明人： KADKHODAYAN BABAK , DHINDSA RAJINDER , DE LA LLERA ANTHONY , KELLOGG MICHAEL C
IPC分类号： H05H1/34 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/3065 , H05H1/38
CPC分类号： H01J37/32532 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32605

10. 发明公开

EP1661171A4 MULTIPLE FREQUENCY PLASMA ETCH REACTOR 审中-公开
标题翻译： TONE-等离子体蚀刻反应器
公开(公告)号：EP1661171A4
公开(公告)日：2009-03-11
申请号：EP04781695
申请日：2004-08-20
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
IPC分类号： H01J37/32 , B23B3/10 , H01L21/311 , H01L21/467 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece (18) is processed with a plasma (8) in a vacuum plasma processing chamber (10) by exciting the plasma at several frequencies (51, 52, 54, 56, 58), such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes top central (14, 36, 36a) and bottom electrodes (13, 16) and a peripheral top (42) and/or bottom electrode (34) arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies. Controller 24 is employed to direct parameter control of various motors (M), valves (V), frequencies (58), power (59), temperature control means (25, 45) and set points (50).

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