专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010117970A3 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
标题翻译：多功能电容耦合等离子体蚀刻室
公开(公告)号：WO2010117970A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030020
申请日：2010-04-06
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
IPC分类号： H01L21/3065 , H05H1/34 , H05H1/36
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.
摘要翻译：一种与气体一起使用的等离子体处理系统。等离子体处理系统包括第一电极，第二电极，气体输入端口，电源和无源电路。气体输入端口可操作以在第一电极和第二电极之间提供气体。电源可操作地从第一电极和第二电极之间的气体点燃等离子体。无源电路耦合到第二电极，并且被配置为调节第二电极的阻抗，电压电位和DC偏置电位中的一个或多个。无源射频电路包括与电感器并联布置的电容器。

2. 发明申请

WO2010080423A3 COMBINED WAFER AREA PRESSURE CONTROL AND PLASMA CONFINEMENT ASSEMBLY 审中-公开
标题翻译：组合晶片区域压力控制和等离子体约束组装
公开(公告)号：WO2010080423A3
公开(公告)日：2010-09-02
申请号：PCT/US2009068189
申请日：2009-12-16
申请人： LAM RES CORP , FISCHER ANDREAS , KOSHIISHI AKIRA
发明人： FISCHER ANDREAS , KOSHIISHI AKIRA
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32449 , H01J37/32623
摘要： A combined pressure control/plasma confinement assembly configured for confining a plasma and for at least partially regulating pressure in a plasma processing chamber during plasma processing of a substrate is provided. The assembly includes a movable plasma confinement structure having therein a plurality of perforations and configured to surround the plasma when deployed. The assembly also includes a movable pressure control structure disposed outside of the movable plasma confinement structure such that the movable plasma confinement structure is disposed between the plasma and the movable pressure control structure during the plasma processing, the movable pressure control structure being deployable and retractable along with the movable plasma confinement structure to facilitate handling of the substrate, the movable pressure control structure being independently movable relative to the movable plasma confinement structure to regulate the pressure by blocking at least a portion of the plurality of perforations.
摘要翻译：提供了一种组合式压力控制/等离子体约束组件，其被配置用于在等离子体处理基板期间约束等离子体并且用于至少部分地调节等离子体处理室中的压力。该组件包括可移动的等离子体约束结构，其中具有多个穿孔并且被配置为当展开时围绕等离子体。该组件还包括设置在可移动的等离子体约束结构外部的可移动的压力控制结构，使得可移动的等离子体约束结构在等离子体处理期间设置在等离子体和可移动的压力控制结构之间，可移动的压力控制结构沿着等离子体利用可移动等离子体约束结构来促进基板的处理，可移动压力控制结构相对于可移动等离子体约束结构可独立地移动，以通过阻挡多个穿孔的至少一部分来调节压力。

3. 发明公开

EP2417626A4 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
标题翻译：等离子刻蚀与电容式多频率和功率
公开(公告)号：EP2417626A4
公开(公告)日：2014-08-06
申请号：EP10762275
申请日：2010-04-06
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
IPC分类号： H01L21/3065 , C23C16/509 , H01J37/32 , H05H1/34 , H05H1/36
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

4. 发明专利

SG10201602785TA E-BEAM ENHANCED DECOUPLED SOURCE FOR SEMICONDUCTOR PROCESSING 未知
公开(公告)号：SG10201602785TA
公开(公告)日：2016-05-30
申请号：SG10201602785T
申请日：2012-04-10
申请人： LAM RES CORP
发明人： HOLLAND JOHN PATRICK , VENTZEK PETER L G , SINGH HARMEET , SHINAGAWA JUN , KOSHIISHI AKIRA
摘要： PROBLEM TO BE SOLVED: To improve separate control of the ion concentration and the radical concentration in plasma.SOLUTION: A semiconductor substrate processing system 300 includes a chamber 301, a substrate support 303, and a separate plasma generation chamber 355. The system also includes a plurality of fluid transmission pathways 316 fluidly connecting the plasma generation chamber 355 to the chamber 301. The system further includes an electron beam source 363 for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. The electron beam source 363 is defined to transmit an electron beam through the processing chamber above and across the substrate support 303.SELECTED DRAWING: Figure 3A

5. 发明专利

SG193943A1 E-BEAM ENHANCED DECOUPLED SOURCE FOR SEMICONDUCTOR PROCESSING 未知
公开(公告)号：SG193943A1
公开(公告)日：2013-11-29
申请号：SG2013071790
申请日：2012-04-10
申请人： LAM RES CORP
发明人： HOLLAND JOHN PATRICK , VENTZEK PETER L G , SINGH HARMEET , SHINAGAWA JUN , KOSHIISHI AKIRA
摘要： A semiconductor substrate processing system includes a processing chamber, a substrate support, and a separate plasma chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion.to. radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.

6. 发明专利

SG171841A1 COMBINED WAFER AREA PRESSURE CONTROL AND PLASMA CONFINEMENT ASSEMBLY 未知
公开(公告)号：SG171841A1
公开(公告)日：2011-07-28
申请号：SG2011038585
申请日：2009-12-16
申请人： LAM RES CORP
发明人： FISCHER ANDREAS , KOSHIISHI AKIRA
摘要： A combined pressure control/plasma confinement assembly configured for confining a plasma and for at least partially regulating pressure in a plasma processing chamber during plasma processing of a substrate is provided. The assembly includes a movable plasma confinement structure having therein a plurality of perforations and configured to surround the plasma when deployed. The assembly also includes a movable pressure control structure disposed outside of the movable plasma confinement structure such that the movable plasma confinement structure is disposed between the plasma and the movable pressure control structure during the plasma processing, the movable pressure control structure being deployable and retractable along with the movable plasma confinement structure to facilitate handling of the substrate, the movable pressure control structure being independently movable relative to the movable plasma confinement structure to regulate the pressure by blocking at least a portion of the plurality of perforations.

7. 发明专利

SG10201602780VA E-BEAM ENHANCED DECOUPLED SOURCE FOR SEMICONDUCTOR PROCESSING 未知
公开(公告)号：SG10201602780VA
公开(公告)日：2016-05-30
申请号：SG10201602780V
申请日：2012-04-10
申请人： LAM RES CORP
发明人： HOLLAND JOHN PATRICK , VENTZEK PETER L G , SINGH HARMEET , SHINAGAWA JUN , KOSHIISHI AKIRA
摘要： PROBLEM TO BE SOLVED: To improve separate control of the ion concentration and the radical concentration in plasma.SOLUTION: A semiconductor substrate processing system 300 includes a chamber 301, a substrate support 303, and a separate plasma generation chamber 355. The system also includes a plurality of fluid transmission pathways 316 fluidly connecting the plasma generation chamber 355 to the chamber 301. The system further includes an electron beam source 363 for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. The electron beam source 363 is defined to transmit an electron beam through the processing chamber above and across the substrate support 303.SELECTED DRAWING: Figure 3A

8. 发明专利

SG11201402690TA SEMICONDUCTOR PROCESSING SYSTEM WITH SOURCE FOR DECOUPLED ION AND RADICAL CONTROL 未知
公开(公告)号：SG11201402690TA
公开(公告)日：2014-10-30
申请号：SG11201402690T
申请日：2012-12-04
申请人： LAM RES CORP
发明人： KOSHIISHI AKIRA , VENTZEK PETER L G , SHINAGAWA JUN , HOLLAND JOHN PATRICK
IPC分类号： H01B13/00
摘要： A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.

9. 发明专利

SG174503A1 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 未知
公开(公告)号：SG174503A1
公开(公告)日：2011-11-28
申请号：SG2011068285
申请日：2010-04-06
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

10. 发明专利

FR2952226A1 ANNEAU DE BORD CHAUD AVEC SURFACE SUPÉRIEURE EN PENTE 未知
公开(公告)号：FR2952226A1
公开(公告)日：2011-05-06
申请号：FR1058977
申请日：2010-11-02
申请人： LAM RES CORP
发明人： KOSHIISHI AKIRA , MANI SATHYA , BHATTACHARYYA GAUTAM , BETTENCOURT GREGORY R , CHAO SANDY
IPC分类号： H01L21/673 , H01L21/3065
摘要： Anneau de bord chaud avec une durée de vie prolongée comprenant un corps annulaire ayant une surface supérieure en pente. L'anneau de bord chaud comprend un gradin sous-jacent d'un bord extérieur d'un substrat semi-conducteur supporté dans une chambre de traitement au plasma dans laquelle on utilise du plasma pour traiter le substrat. Le gradin comprend une surface verticale qui entoure le bord extérieur du substrat et la surface supérieure en pente s'étend vers le haut et vers l'extérieur à partir de la périphérie supérieure de la surface verticale. (Voir Figure 4).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式