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1. 发明授权

US07012945B2 Multi DFB laser diode 失效
标题翻译：多DFB激光二极管
公开(公告)号：US07012945B2
公开(公告)日：2006-03-14
申请号：US10725822
申请日：2003-12-01
申请人： Kyung-Hyun Park , Young-Ahn Leem , Dong-Churl Kim , Dae-Su Yee , Sung-Bock Kim , Yong-Soon Baek
发明人： Kyung-Hyun Park , Young-Ahn Leem , Dong-Churl Kim , Dae-Su Yee , Sung-Bock Kim , Yong-Soon Baek
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , H01S5/028 , H01S5/0623 , H01S5/06258 , H01S5/0658 , H01S5/1215 , H01S5/1237 , H01S5/2081 , H01S5/2226 , H01S5/3213 , H01S5/32333 , H01S2301/173
摘要： A multi DFB laser diode for generating spontaneous pulses comprises first and second DFB sections each of which has a substrate including a diffraction grating, an active layer formed on the substrate, a clad layer formed on the active layer and including a refraction varying layer, and an electrode formed on the active layer; and a phase tuning section including a substrate, an active layer formed on the substrate, a clad layer formed on the active layer, and an electrode isolated from the electrode of the first and second DFB sections. The refraction varying layer in the active layer of the first DFB section has a refractive index different from that of the refraction varying layer in the active layer of the second DFB section.
摘要翻译：用于产生自发脉冲的多DFB激光二极管包括第一和第二DFB部分，每个DFB部分具有包括衍射光栅的衬底，在衬底上形成的有源层，形成在有源层上并包括折射变化层的覆层，以及形成在有源层上的电极; 以及相位调谐部，其包括基板，形成在所述基板上的有源层，形成在所述有源层上的覆盖层，以及与所述第一DFB部和所述第二DFB部的电极隔离的电极。第一DFB部分的有源层中的折射变化层具有与第二DFB部分的有源层中的折射变化层的折射率不同的折射率。

2. 发明授权

US06928098B2 High frequency optical pulse source 有权
标题翻译：高频光脉冲源
公开(公告)号：US06928098B2
公开(公告)日：2005-08-09
申请号：US10632587
申请日：2003-07-31
申请人： Dong-Churl Kim , Young-Ahn Leem , Dae-Su Yee , Kyung-Hyun Pakr , Sung-Bock Kim , Yong-Soon Baek , Eun-Deok Sim
发明人： Dong-Churl Kim , Young-Ahn Leem , Dae-Su Yee , Kyung-Hyun Pakr , Sung-Bock Kim , Yong-Soon Baek , Eun-Deok Sim
IPC分类号： H01S5/12 , H01S5/0625 , H01S5/065 , H01S5/00 , H01S3/08
CPC分类号： H01S5/06258 , H01S5/0657
摘要： Disclosed is a high frequency optical pulse source generating stable optical pulses over a wide current range in an optical transmission system to enhance stability and reliability, the high frequency optical pulse source implementing, in one chip, a multi-section distributed feedback (DFB) laser diode with a phase control section arranged between two DFB laser diodes. By controlling the current applied to the electrode of the phase control section while applying currents to the first and second DFB sections, the present invention causes self-mode locking between the compound-cavity modes having similar threshold currents, thereby generating stable tens GHz-level optical pulses. Hence, the present invention generates optical pulses uniformly over a wide current range, thereby enhancing the stability and reliability of the element.
摘要翻译：公开了一种在光传输系统中在宽电流范围内产生稳定的光脉冲以提高稳定性和可靠性的高频光脉冲源，高频光脉冲源在一个芯片中实现了多段分布反馈（DFB）激光器二极管，相位控制部分布置在两个DFB激光二极管之间。通过控制施加到相位控制部分的电极的电流，同时向第一和第二DFB部分施加电流，本发明引起具有类似阈值电流的化合物腔模式之间的自锁定，从而产生稳定的数十GHz级光脉冲。因此，本发明在宽电流范围内均匀地产生光脉冲，从而提高元件的稳定性和可靠性。

3. 发明授权

US07680169B2 Self-mode locked multi-section semiconductor laser diode 失效
标题翻译：自锁式多段半导体激光二极管
公开(公告)号：US07680169B2
公开(公告)日：2010-03-16
申请号：US10726141
申请日：2003-12-01
申请人： Kyung-Hyun Park , Dae-Su Yee , Dong-Churl Kim , Young-Ahn Leem , Sung-Bock Kim
发明人： Kyung-Hyun Park , Dae-Su Yee , Dong-Churl Kim , Young-Ahn Leem , Sung-Bock Kim
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/06258 , H01S5/0657 , H01S5/1228 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/34306
摘要： A multi-section semiconductor laser diode is disclosed. The laser diode includes a complex-coupled DFB laser section that includes a complex-coupled grating and an active structure for controlling the intensity of oscillating laser light, to oscillate laser light in a single mode, and an external cavity including a phase control section and an amplifier section, the phase control section having a passive waveguide that controls a phase variation of feedback laser light, the amplification section having an active structure that controls the strength of the feedback laser light. Currents are separately provided to the three sections to generate optical pulses with tuning range of tens of GHz. Applications include the clock recovery in the 3R regeneration of the optical communication.
摘要翻译：公开了一种多段半导体激光二极管。激光二极管包括复耦DFB激光器部分，其包括复耦合光栅和用于控制振荡激光的强度，以单一模式振荡激光的有源结构，以及包括相位控制部分的外部腔和放大器部分，相位控制部分具有控制反馈激光的相位变化的无源波导，该放大部分具有控制反馈激光强度的有源结构。电流分别提供给三个部分，以产生具有几十GHz调谐范围的光脉冲。应用包括在光通信的3R再生中的时钟恢复。

4. 发明授权

US06639735B2 Method for manufacturing an optical device 失效
公开(公告)号：US06639735B2
公开(公告)日：2003-10-28
申请号：US09927221
申请日：2001-08-10
申请人： Kyung-Hyun Park , Jong-Hoi Kim , Yong-Soon Baek , Moon-Ho Park , Sung-Bock Kim , Kwang-Ryong Oh
发明人： Kyung-Hyun Park , Jong-Hoi Kim , Yong-Soon Baek , Moon-Ho Park , Sung-Bock Kim , Kwang-Ryong Oh
IPC分类号： G02B308
CPC分类号： G02B6/1228 , G02B6/12004 , G02B2006/12176 , H01S5/1014 , H01S5/1032 , H01S5/2081
摘要： Disclosed is a method for the fabrication of a spot-size converter with a lateral-tapered waveguide (or an active layer), which utilizes a mask during a lithographic process wherein the mask has a pad that can absorb strain to be occurred during forming a lateral-tapered waveguide pattern at its distal end and the lateral-tapered waveguide is fabricated by forming the distal end on the order of about 0.6 &mgr;m in width followed by forming the lateral-tapered waveguide on the order of 0.1 &mgr;m using an wet etching. Thus, it is possible to reduce a fabrication cost because it is free from a high-resolution electron beam lithography and a stepper, and hence enhance a reproducibility of the lateral-tapered waveguide because it is free from an excessive wet etching during the use of a contact exposure equipment. Further, it is possible to integrate the spot-size converter fabricated by the above with an optical device, resulting in an increased position adjustment and reproducibility of the spot-size converter, which in turn, leads to increase in yield for the optical device.

5. 发明授权

US5824453A Fabricating method of GaAs substrate having V-shaped grooves 失效
标题翻译：具有V形槽的GaAs衬底的制造方法
公开(公告)号：US5824453A
公开(公告)日：1998-10-20
申请号：US946915
申请日：1997-10-09
申请人： Sung-Bock Kim , Seong-Ju Park , Jeong-Rae Ro , El-Hang Lee
发明人： Sung-Bock Kim , Seong-Ju Park , Jeong-Rae Ro , El-Hang Lee
IPC分类号： H01L29/06 , H01L21/20 , H01L21/302 , H01L21/306 , H01L21/308 , G03F7/00
CPC分类号： H01L21/02395 , H01L21/02433 , H01L21/02546 , H01L21/02639 , H01L21/30617
摘要： Disclosed is a fabricating method of a GaAs substrate having a V-shaped groove in a higher density, that is a double density, the method comprising the steps of forming a Si.sub.3 N.sub.4 layer on a main surface of the GaAs substrate; patterning the Si.sub.3 N.sub.4 layer using a photo-lithography to form a patterned Si.sub.3 N.sub.4 layer having a minimum width; wet-etching the GaAs substrate using the patterned Si.sub.3 N.sub.4 layer as a mask, so as to form (111) and (100) surfaces of the GaAs substrate beneath the patterned Si.sub.3 N.sub.4 ; selectively growing a GaAs film on the GaAs substrate etched thus using the patterned Si.sub.3 N.sub.4 layer as a mask so as to form the GaAs film with two (111) facets only on a (100) surface of the GaAs substrate; and removing the Si.sub.3 N.sub.4 layer. The V-shaped grooves can be formed on a GaAs substrate utilizing a difference of growth rate caused by surface orientation of the substrate, and therefore the grooves can be formed in double density.
摘要翻译：本发明公开了一种GaAs衬底的制造方法，该GaAs衬底具有较高密度的V形沟槽，即双重密度，该方法包括以下步骤：在GaAs衬底的主表面上形成Si 3 N 4层; 使用光刻法构图Si 3 N 4层以形成具有最小宽度的图案化的Si 3 N 4层; 使用图案化的Si 3 N 4层作为掩模对GaAs衬底进行湿法蚀刻，以在图案化的Si 3 N 4之下形成GaAs衬底的（111）和（100）表面; 在GaAs衬底上选择性地生长GaAs膜，使用图案化的Si 3 N 4层作为掩模进行蚀刻，以便仅在GaAs衬底的（100）表面上形成具有两个（111）面的GaAs膜; 并去除Si3N4层。可以使用由衬底的表面取向引起的生长速度差，在GaAs衬底上形成V形槽，因此可以以双重密度形成沟槽。

6. 发明授权

US6019008A Linear motion apparatus under ultra high vacuum 失效
标题翻译：直线运动装置在超高真空下
公开(公告)号：US6019008A
公开(公告)日：2000-02-01
申请号：US903797
申请日：1997-07-31
申请人： Sung-Bock Kim , Wan-Soo Yun , El-Hang Lee
发明人： Sung-Bock Kim , Wan-Soo Yun , El-Hang Lee
IPC分类号： H01L21/68 , B25J1/08 , B25J18/02
CPC分类号： B25J18/025 , B25J1/08 , Y10S414/135 , Y10T403/32467 , Y10T74/18848 , Y10T74/20468
摘要： A linear motion apparatus for moving an object in a vacuum chamber comprising an antenna or a telescoping shaft such as a fishing rod to effectively utilize space, and to avoid the need of a rear projection thereby achieving stability. The linear motion apparatus includes: a body having a space portion penetrated horizontally; a rotary handle which penetrates at a right angle to the space portion of the body thereby controlling a linear motion; locking portion which is mounted in the space portion of the body, is inserted into a shaft of the rotary handle, and used to lock the motion; a guide rod which is formed as a multistage rod, whose one end is inserted and fixed into a predetermined position of the space portion of the body; linear motion force providing portion whose one end is fixed to the rotary plate and the other end is fixed to a nose portion of the guide rod, thereby providing a linear motion force to the guide rod; and a bellows seal which surrounds a circumference of the guide rod, is shrunken or expanded according to a linear motion of the guide rod. As a result, this apparatus performs a linear motion control by a contraction and expansion under ultra high vacuum.
摘要翻译：一种用于在包括天线或诸如钓鱼杆的伸缩轴的真空室中移动物体的线性运动装置，以有效利用空间，并且避免了后部突出物的需要，从而实现稳定性。线性运动装置包括：主体，其具有水平地穿透的空间部分; 旋转手柄，其以直角穿过主体的空间部分，从而控制直线运动; 安装在主体的空间部分中的锁定部分插入旋转手柄的轴中，并用于锁定运动; 导杆，其形成为多级杆，其一端插入并固定到本体的空间部分的预定位置; 直线运动力提供部分，其一端固定在旋转板上，另一端固定在导杆的鼻部，从而向导杆提供线性运动力; 并且围绕导杆的圆周的波纹管密封件根据导杆的直线运动而收缩或膨胀。结果，该装置通过在超高真空下的收缩和膨胀进行直线运动控制。

7. 发明授权

US06242326B1 Method for fabricating compound semiconductor substrate having quantum dot array structure 有权
标题翻译：具有量子点阵列结构的化合物半导体衬底的制造方法
公开(公告)号：US06242326B1
公开(公告)日：2001-06-05
申请号：US09452853
申请日：1999-12-02
申请人： Jung-Rae Ro , Sung-Bock Kim , Kyoung-Wan Park
发明人： Jung-Rae Ro , Sung-Bock Kim , Kyoung-Wan Park
IPC分类号： H01L21203
CPC分类号： B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02513 , H01L21/02516 , H01L21/02546 , H01L21/0259 , H01L21/02614 , H01L29/127 , Y10S438/962
摘要： A method for fabricating a compound semiconductor substrate having a quantum dot array structure includes the steps of forming a plurality of dielectric thin layer patterns on a substrate, thereby forming an exposed area of the substrate, sequentially forming buffer layers and barrier layers in a pyramid shape on the exposed area of the substrate, forming Ga droplets on the barrier layers, transforming the Ga droplets into GaAs quantum dots, performing a thermal process to the substrate, and growing the buffer layers and the barrier layers to thereby form a passivation layer capping the GaAs quantum dots.
摘要翻译：一种制造具有量子点阵列结构的化合物半导体衬底的方法包括以下步骤：在衬底上形成多个电介质薄层图案，从而形成衬底的暴露区域，依次形成金字塔形状的缓冲层和阻挡层在衬底的暴露区域上，在阻挡层上形成Ga液滴，将Ga液滴转变成GaAs量子点，对衬底进行热处理，并使缓冲层和阻挡层生长，从而形成钝化层 GaAs量子点。

8. 发明授权

US5770475A Crystal growth method for compound semiconductor 失效
标题翻译：化合物半导体的晶体生长方法
公开(公告)号：US5770475A
公开(公告)日：1998-06-23
申请号：US717903
申请日：1996-09-23
申请人： Sung-Bock Kim , Jeong-Rae Ro , El-Hang Lee
发明人： Sung-Bock Kim , Jeong-Rae Ro , El-Hang Lee
IPC分类号： H01L21/205 , H01L21/306 , H01L21/00
CPC分类号： B82Y10/00 , H01L21/02395 , H01L21/0243 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02609 , H01L21/02658 , H01L21/30617
摘要： A crystal growth method for a compound semiconductor is capable of forming a plurality of quantum wells (formed of a barrier layer having a large energy band gap and an active layer having a small energy band gap) on the compound semiconductor substrate. After etching a V-shaped groove having a (111) surface with a predetermined angle .theta.1 with respect to the (100) surface on the GaAs semiconductor substrate, the substrate is further etched by a hydrochloric solution and a solution of H.sub.2 SO.sub.4 :H.sub.2 O.sub.2 :H.sub.2 O=20:1 to cause the V-shaped groove walls to become a non-(111) surface having a lower predetermined slope angle .theta.2. The quantum wells then grown in the bottom of the V-shaped groove will be effectively disconnected from simultaneous growths on the side walls of the groove thus giving rise to closely controlled multi-dimensional quantum well structures.
摘要翻译：化合物半导体的晶体生长方法能够在化合物半导体基板上形成多个量子阱（由具有大能带隙的势垒层和具有小能带隙的有源层形成）。在GaAs半导体衬底上蚀刻具有相对于（100）表面的具有预定角度θ（111）的（111）表面的V形槽之后，用盐酸溶液和H 2 SO 4 :H 2 O 2： H 2 O = 20:1使V形槽壁成为具有较低预定倾斜角度θ2的非（111）表面。然后在V形槽的底部生长的量子阱将被有效地从在槽的侧壁上同时生长，从而产生紧密控制的多维量子阱结构。

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