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1. 发明申请

US20120145999A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120145999A1
公开(公告)日：2012-06-14
申请号：US13193690
申请日：2011-07-29
申请人： Dongwoo Suh , Sung Bock Kim , Hojun Ryu
发明人： Dongwoo Suh , Sung Bock Kim , Hojun Ryu
IPC分类号： H01L29/775 , B82Y40/00 , B82Y99/00 , H01L21/336
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/068 , H01L29/66439 , H01L29/775 , H01L29/78696 , Y10S977/762
摘要： Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.
摘要翻译：提供半导体器件及其制造方法。该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开，并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

2. 发明授权

US07813388B2 Self-pulsating laser diode 失效
标题翻译：自脉冲激光二极管
公开(公告)号：US07813388B2
公开(公告)日：2010-10-12
申请号：US11932937
申请日：2007-10-31
申请人： Kyung Hyun Park , Hyun Sung Ko , Young Ahn Leem , Min Yong Jeon , Eun Deok Sim , Sung Bock Kim
发明人： Kyung Hyun Park , Hyun Sung Ko , Young Ahn Leem , Min Yong Jeon , Eun Deok Sim , Sung Bock Kim
IPC分类号： H01S3/098
CPC分类号： H01S5/0625 , H01S5/0658
摘要： Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.
摘要翻译：提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

3. 发明授权

US07583868B2 3R recovery system 失效
标题翻译： 3R恢复系统
公开(公告)号：US07583868B2
公开(公告)日：2009-09-01
申请号：US11295414
申请日：2005-12-06
申请人： Dae Su Yee , Young Ahn Leem , Dong Churl Kim , Kyung Hyun Park , Sung Bock Kim
发明人： Dae Su Yee , Young Ahn Leem , Dong Churl Kim , Kyung Hyun Park , Sung Bock Kim
IPC分类号： G02B6/12 , G02B6/26 , G02F1/01 , G02F1/035 , G02F1/295
CPC分类号： H04B10/299 , G02B6/12004
摘要： A full 3R (re-timing, re-shaping, re-amplifying) recovery system is provided. In the full 3R recovery system, a self-pulsating laser diode (SP-LD) and an electroabsorption modulator (EAM) are integrated and disposed on a semiconductor substrate.
摘要翻译：提供了一个完整的3R（重新定时，重新整形，再放大）恢复系统。在完整的3R恢复系统中，自脉冲激光二极管（SP-LD）和电吸收调制器（EAM）被集成并设置在半导体衬底上。

4. 发明授权

US6074936A Method of fabricating a quantum device 失效
标题翻译：制造量子器件的方法
公开(公告)号：US6074936A
公开(公告)日：2000-06-13
申请号：US93195
申请日：1998-06-08
申请人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
发明人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
IPC分类号： H01L21/30 , H01L21/20 , H01L21/205 , H01L21/311 , H01L21/36 , H01L21/00
CPC分类号： B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02639 , H01L21/31116 , Y10S438/962
摘要： A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.
摘要翻译：一种制造量子线结构和器件的方法，以及量子点结构和器件包括以下步骤：在半导体衬底上沉积绝缘层，在绝缘层中形成线图案和方形图案，形成V形槽图案结构和通过热蚀刻将反向四边形金字塔图案化的结构蒸发成量子阱层的未被掩模层的线状掩模区域和方形掩模区域保护的部分，通过交替生长形成量子线和量子点阻挡层和V沟槽图案化衬底上的有源层和反向四边形金字塔图案化衬底。

5. 发明授权

US5824453A Fabricating method of GaAs substrate having V-shaped grooves 失效
标题翻译：具有V形槽的GaAs衬底的制造方法
公开(公告)号：US5824453A
公开(公告)日：1998-10-20
申请号：US946915
申请日：1997-10-09
申请人： Sung-Bock Kim , Seong-Ju Park , Jeong-Rae Ro , El-Hang Lee
发明人： Sung-Bock Kim , Seong-Ju Park , Jeong-Rae Ro , El-Hang Lee
IPC分类号： H01L29/06 , H01L21/20 , H01L21/302 , H01L21/306 , H01L21/308 , G03F7/00
CPC分类号： H01L21/02395 , H01L21/02433 , H01L21/02546 , H01L21/02639 , H01L21/30617
摘要： Disclosed is a fabricating method of a GaAs substrate having a V-shaped groove in a higher density, that is a double density, the method comprising the steps of forming a Si.sub.3 N.sub.4 layer on a main surface of the GaAs substrate; patterning the Si.sub.3 N.sub.4 layer using a photo-lithography to form a patterned Si.sub.3 N.sub.4 layer having a minimum width; wet-etching the GaAs substrate using the patterned Si.sub.3 N.sub.4 layer as a mask, so as to form (111) and (100) surfaces of the GaAs substrate beneath the patterned Si.sub.3 N.sub.4 ; selectively growing a GaAs film on the GaAs substrate etched thus using the patterned Si.sub.3 N.sub.4 layer as a mask so as to form the GaAs film with two (111) facets only on a (100) surface of the GaAs substrate; and removing the Si.sub.3 N.sub.4 layer. The V-shaped grooves can be formed on a GaAs substrate utilizing a difference of growth rate caused by surface orientation of the substrate, and therefore the grooves can be formed in double density.
摘要翻译：本发明公开了一种GaAs衬底的制造方法，该GaAs衬底具有较高密度的V形沟槽，即双重密度，该方法包括以下步骤：在GaAs衬底的主表面上形成Si 3 N 4层; 使用光刻法构图Si 3 N 4层以形成具有最小宽度的图案化的Si 3 N 4层; 使用图案化的Si 3 N 4层作为掩模对GaAs衬底进行湿法蚀刻，以在图案化的Si 3 N 4之下形成GaAs衬底的（111）和（100）表面; 在GaAs衬底上选择性地生长GaAs膜，使用图案化的Si 3 N 4层作为掩模进行蚀刻，以便仅在GaAs衬底的（100）表面上形成具有两个（111）面的GaAs膜; 并去除Si3N4层。可以使用由衬底的表面取向引起的生长速度差，在GaAs衬底上形成V形槽，因此可以以双重密度形成沟槽。

6. 发明授权

US08993991B2 Semiconductor devices including a nanowire and methods of manufacturing the same 有权
标题翻译：包括纳米线的半导体器件及其制造方法
公开(公告)号：US08993991B2
公开(公告)日：2015-03-31
申请号：US13193690
申请日：2011-07-29
申请人： Dongwoo Suh , Sung Bock Kim , Hojun Ryu
发明人： Dongwoo Suh , Sung Bock Kim , Hojun Ryu
IPC分类号： H01L29/06 , B82Y10/00 , B82Y40/00 , H01L29/66 , H01L29/775 , H01L29/786 , H01L21/02
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/068 , H01L29/66439 , H01L29/775 , H01L29/78696 , Y10S977/762
摘要： Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.
摘要翻译：提供半导体器件及其制造方法。该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开，并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

7. 发明授权

US07277222B2 Apparatus and method for wavelength conversion and clock signal extraction using semiconductor optical amplifiers 有权
标题翻译：使用半导体光放大器进行波长转换和时钟信号提取的装置和方法
公开(公告)号：US07277222B2
公开(公告)日：2007-10-02
申请号：US11491646
申请日：2006-07-24
申请人： Dong Churl Kim , Min Yong Jeon , Young Ahn Leem , Eun Deok Sim , Kyung Hyun Park , Sung Bock Kim
发明人： Dong Churl Kim , Min Yong Jeon , Young Ahn Leem , Eun Deok Sim , Kyung Hyun Park , Sung Bock Kim
IPC分类号： H01S3/00
CPC分类号： H04B10/299
摘要： Provided is an apparatus and method for simultaneous optical wavelength conversion and optical clock signal extraction using semiconductor optical amplifiers (SOAs). The apparatus includes: a wavelength converter receiving a pump beam having input information and a probe beam having a different wavelength from the pump beam, and outputting the pump beam with an overshoot shifted to a red wavelength and an undershoot shifted to a blue wavelength due to non-linear characteristics and self-phase modulation of semiconductor optical amplifiers (SOAs) and the probe beam delivered the input information from the pump beam; an optical divider dividing output paths of the probe beam to which the input information has been delivered and the pump beam having the overshoot and the undershoot; a converted-wavelength extractor filtering the probe beam received from the optical divider; and a clock data regenerator obtaining a pseudo return-to-zero (PRZ) signal from the pump beam received from the optical divider and extracting a clock signal from the PRZ signal.The apparatus and method can simultaneously perform wavelength conversion and optical clock signal extraction on an NRZ signal using an optical method, without converting the NRZ signal into an electrical signal.
摘要翻译：提供了一种使用半导体光放大器（SOA）同时进行光波长转换和光时钟信号提取的装置和方法。该装置包括：波长转换器，其接收具有输入信息的泵浦光束和具有与泵浦光束不同的波长的探测光束，并且由于偏移到红色波长的过冲和由于由于半导体光放大器（SOA）的非线性特性和自相位调制以及探测光束从泵浦光束传送输入信息; 分割器分割输入信息已被传送到的探测光束的输出路径和具有过冲和下冲的泵浦光束; 转换波长提取器对从分光器接收的探测光束进行滤波; 以及时钟数据再生器，从从光分路器接收的泵浦光束获得伪归零（PRZ）信号，并从PRZ信号提取时钟信号。该装置和方法可以使用光学方法在NRZ信号上同时进行波长转换和光时钟信号提取，而不将NRZ信号转换成电信号。

8. 发明授权

US07248616B2 Bidirectional transceiver and method for driving the same 有权
标题翻译：双向收发器及其驱动方法
公开(公告)号：US07248616B2
公开(公告)日：2007-07-24
申请号：US10714016
申请日：2003-11-14
申请人： Sung Bock Kim , Eundeok Sim , Ki Soo Kim
发明人： Sung Bock Kim , Eundeok Sim , Ki Soo Kim
IPC分类号： H01S3/08
CPC分类号： H04B10/40
摘要： There are provided a bi-directional transceiver module and a method for driving the same. The bi-directional transceiver module includes a 1.3 μm Distributed Bragg Reflection Laser Diode (DBR LD) including an active layer which performs light-emission in response to a light at 1.3 μm and a DBR mirror formed near the active layer. The DBR mirror is formed to prevent an upstream signal emerging from the 1.3 μm DBR LD from being deleted by a PD. A monitoring PD and a PD for detecting an optical signal are integrated and mounted behind the DBR mirror using a butt-joint method. The 1.3 μm DBR LD, the monitoring PD, and the PD for detecting the optical signal are electrically isolated by insulated areas. To drive the bi-directional transceiver module, a forward bias (+) is applied to a p-electrode formed on the 1.3 μm DBR LD, a backward bias (−) is applied to p-electrodes formed on the monitoring PD and the PD for detecting the optical signal, and a n-electrode as a common electrode is grounded.
摘要翻译：提供了双向收发器模块及其驱动方法。双向收发器模块包括1.3μm分布布拉格反射激光二极管（DBR LD），其包括响应于1.3μm的光执行发光的有源层和在有源层附近形成的DBR镜。 DBR镜被形成为防止从1.3mum DBR LD出现的上行信号被PD删除。用于检测光信号的监控PD和PD集成并使用对接方法安装在DBR镜后面。 1.3mum DBR LD，监控PD和用于检测光信号的PD通过绝缘区域进行电隔离。为了驱动双向收发器模块，正向偏压（+）被施加到形成在1.3mum DBR LD上的p电极，反向偏压（ - ）施加到形成在监测PD和PD上的p电极用于检测光信号，并且作为公共电极的n电极接地。

9. 发明申请

US20070127535A1 Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method on manufacturing the same, and VCSEL diode 有权
标题翻译：垂直腔表面发射激光器（VCSEL）二极管中的分布式布拉格反射器（DBR）结构，其制造方法和VCSEL二极管
公开(公告)号：US20070127535A1
公开(公告)日：2007-06-07
申请号：US11544832
申请日：2006-10-05
申请人： Ki Soo Kim , Wonk Seok Han , Sung Bock Kim , Dae Kon Oh
发明人： Ki Soo Kim , Wonk Seok Han , Sung Bock Kim , Dae Kon Oh
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306
摘要： A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.
摘要翻译：提供VCSEL二极管中的DBR结构，制造DBR结构的方法和VCSEL二极管。 VCSEL二极管中的DBR结构包括：具有预定折射率并设置在InP衬底上的InAlGaAs层; 第一InAlAs层，其折射率低于InAlGaAs层并且设置在InAlGaAs层上; InP层，其折射率低于InAlGaAs层并且设置在第一InAlAs层上; 和具有比InAlGaAs层低的折射率的第二InAlAs层并且设置在InP层上。因此，DBR结构可以减少在InAlGaAs层和InP层之间的结上的II型带阵列引起的光损耗，从而提高器件特性。

10. 发明授权

US06985273B2 Electro-absorption optical modulator having multiple quantum well 失效
标题翻译：具有多个量子阱的电吸收光学调制器
公开(公告)号：US06985273B2
公开(公告)日：2006-01-10
申请号：US10743463
申请日：2003-12-23
申请人： Young Shik Kang , Je Ha Kim , Ji Youn Lim , Sung Bock Kim
发明人： Young Shik Kang , Je Ha Kim , Ji Youn Lim , Sung Bock Kim
IPC分类号： G02F
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2001/0175
摘要： Disclosed is an electro-absorption optical modulator using a semiconductor device. The optical modulator makes use of a change in light absorption caused by displacement of an absorption curve depending on a bias voltage applied to the device. Here, a level of the light absorption depending on the bias voltage is expressed as a transfer function of output light to the applied bias, and the transfer function has a non-linear profile due to a characteristic of a material. Unlike signal modulation of a digital optical communication system, an analog optical transmission system can be subjected to deterioration in performance, because the non-linear characteristic of the transfer function for the optical modulator generates signal distortion when an electrical signal is converted into an optical signal. The typical optical modulator has an absorption layer constituted of quantum wells having the same width. However, the inventive optical modulator has the absorption layer formed by the combination of quantum wells having a width different form each other, thus having excellent linearity.
摘要翻译：公开了使用半导体器件的电吸收光调制器。光调制器利用由施加到器件的偏置电压引起的吸收曲线位移引起的光吸收变化。这里，根据偏置电压的光吸收水平被表示为输出光到施加偏压的传递函数，并且传递函数由于材料的特性而具有非线性轮廓。与数字光通信系统的信号调制不同，模拟光传输系统由于光调制器的传递函数的非线性特性在将电信号转换成光信号时会产生信号失真。典型的光调制器具有由具有相同宽度的量子阱构成的吸收层。然而，本发明的光调制器具有通过量子阱的组合形成的吸收层，该量子阱具有彼此不同的宽度，因此具有优异的线性。

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