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1. 发明申请

US20130020111A1 SUBSTRATE FOR POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于功率模块封装的基板及其制造方法
公开(公告)号：US20130020111A1
公开(公告)日：2013-01-24
申请号：US13253866
申请日：2011-10-05
申请人： Kyu Hwan Oh , Jong Man Kim , Seog Moon Choi , Young Hoon Kwak , Kwang Soo Kim , Young Ki Lee
发明人： Kyu Hwan Oh , Jong Man Kim , Seog Moon Choi , Young Hoon Kwak , Kwang Soo Kim , Young Ki Lee
IPC分类号： H05K1/05 , H05K1/02 , H05K3/10 , H05K1/00
CPC分类号： H05K1/053 , H01L23/142 , H01L2924/0002 , H05K2203/0315 , Y10T29/49155 , H01L2924/00
摘要： Disclosed herein are a substrate for a power module package and a method for manufacturing the same, including: a base substrate made of a metal material; an anodized layer formed on the base substrate; and a circuit layer formed on the anodized layer, wherein the anodized layer is formed to correspond to circuit patterns on the circuit layer or is formed to be divided into a plurality of areas.
摘要翻译：本文公开了一种用于功率模块封装的基板及其制造方法，包括：由金属材料制成的基底; 形成在基底基板上的阳极化层; 以及形成在所述阳极氧化层上的电路层，其中所述阳极化层形成为对应于所述电路层上的电路图案，或者形成为被划分为多个区域。

2. 发明授权

US08736077B2 Semiconductor package substrate 有权
标题翻译：半导体封装基板
公开(公告)号：US08736077B2
公开(公告)日：2014-05-27
申请号：US13308441
申请日：2011-11-30
申请人： Jong Man Kim , Young Hoon Kwak , Kyu Hwan Oh , Seog Moon Choi , Tae Hoon Kim
发明人： Jong Man Kim , Young Hoon Kwak , Kyu Hwan Oh , Seog Moon Choi , Tae Hoon Kim
IPC分类号： H01L23/488
CPC分类号： H01L23/36 , H01L21/563 , H01L23/562 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/26145 , H01L2224/26175 , H01L2224/29076 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/83385 , H01L2224/834 , H01L2224/83411 , H01L2224/83418 , H01L2224/83447 , H01L2224/83455 , H01L2224/83464 , H01L2224/83466 , H01L2224/83471 , H01L2224/8348 , H01L2224/83484 , H01L2924/15787 , H01L2924/00014 , H01L2924/01014 , H01L2924/014 , H01L2924/0665 , H01L2924/00
摘要： Disclosed herein is a semiconductor package substrate including a base substrate, a mounting member mounted on an upper portion of the base substrate, and an adhesive layer formed between the base substrate and the mounting member, wherein the adhesive layer includes a thermally conductive adhesive and a ductile adhesive formed at the outer circumference of the thermally conductive adhesive.
摘要翻译：本发明公开了一种半导体封装基板，其包括基底基板，安装在基底基板的上部的安装部件和形成在基底基板与安装部件之间的粘合层，其中粘合层包括导热粘合剂和在导热粘合剂的外周形成的韧性粘合剂。

3. 发明授权

US09153514B2 Power module package 有权
标题翻译：电源模块封装
公开(公告)号：US09153514B2
公开(公告)日：2015-10-06
申请号：US13610680
申请日：2012-09-11
申请人： Young Ho Sohn , Young Hoon Kwak , Jong Man Kim , Kyu Hwan Oh , Tae Hyun Kim
发明人： Young Ho Sohn , Young Hoon Kwak , Jong Man Kim , Kyu Hwan Oh , Tae Hyun Kim
IPC分类号： H01L29/72 , H01L23/31 , H01L23/373 , H01L23/433 , H01L23/495
CPC分类号： H01L23/3107 , H01L23/3735 , H01L23/4334 , H01L23/49537 , H01L23/49575 , H01L24/73 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： Disclosed herein is a power module package including: a first substrate having one surface and the other surface; a second substrate contacting one surface of the first substrate; a third substrate contacting one side of the other surface of the first substrate; a first lead frame contacting the other side of the other surface of the first substrate; and a second lead frame electrically connected to the third substrate.
摘要翻译：本文公开了一种功率模块封装，包括：具有一个表面和另一个表面的第一基板; 第二基板，与第一基板的一个表面接触; 第三基板，其接触所述第一基板的另一表面的一侧; 与所述第一基板的另一表面的另一侧接触的第一引线框架; 以及电连接到第三基板的第二引线框架。

4. 发明授权

US09105611B2 Power module package 有权
标题翻译：电源模块封装
公开(公告)号：US09105611B2
公开(公告)日：2015-08-11
申请号：US13610671
申请日：2012-09-11
申请人： Kwang Soo Kim , Yong Hoon Kwak , Sun Woo Yun , Young Ki Lee , Kyu Hwan Oh , Jin Suk Son
发明人： Kwang Soo Kim , Yong Hoon Kwak , Sun Woo Yun , Young Ki Lee , Kyu Hwan Oh , Jin Suk Son
IPC分类号： H01L23/495 , H01L23/433
CPC分类号： H01L23/4334 , H01L23/49531 , H01L23/49537 , H01L23/49575 , H01L2224/48137 , H01L2224/48247 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
摘要： Disclosed herein is a power module package including: a substrate having a ceramic layer formed in one surface thereof; a circuit pattern formed on the ceramic layer; a first lead frame having one side contacting the circuit pattern and the other side protruding toward the outside; and a first semiconductor chip mounted on one side of the first lead frame.
摘要翻译：本文公开了一种功率模块封装，包括：具有在其一个表面中形成的陶瓷层的基板; 形成在陶瓷层上的电路图案; 第一引线框架，其一侧接触电路图案，另一侧向外突出; 以及安装在所述第一引线框架的一侧上的第一半导体芯片。

5. 发明申请

US20130105953A1 POWER MODULE PACKAGE 有权
标题翻译：电源模块封装
公开(公告)号：US20130105953A1
公开(公告)日：2013-05-02
申请号：US13610671
申请日：2012-09-11
申请人： Kwang Soo Kim , Yong Hoon Kwak , Sun Woo Yun , Young Ki Lee , Kyu Hwan Oh , Jin Suk Son
发明人： Kwang Soo Kim , Yong Hoon Kwak , Sun Woo Yun , Young Ki Lee , Kyu Hwan Oh , Jin Suk Son
IPC分类号： H01L23/495
CPC分类号： H01L23/4334 , H01L23/49531 , H01L23/49537 , H01L23/49575 , H01L2224/48137 , H01L2224/48247 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
摘要： Disclosed herein is a power module package including: a substrate having a ceramic layer formed in one surface thereof; a circuit pattern formed on the ceramic layer; a first lead frame having one side contacting the circuit pattern and the other side protruding toward the outside; and a first semiconductor chip mounted on one side of the first lead frame.
摘要翻译：本文公开了一种功率模块封装，包括：具有在其一个表面中形成的陶瓷层的基板; 形成在陶瓷层上的电路图案; 第一引线框架，其一侧接触电路图案，另一侧向外突出; 以及安装在所述第一引线框架的一侧上的第一半导体芯片。

6. 发明申请

US20130146259A1 HEAT SINK 审中-公开
标题翻译：散热器
公开(公告)号：US20130146259A1
公开(公告)日：2013-06-13
申请号：US13402525
申请日：2012-02-22
申请人： Kyu Hwan Oh , Chang Seob Hong , Young Hoon Kwak
发明人： Kyu Hwan Oh , Chang Seob Hong , Young Hoon Kwak
IPC分类号： F28D15/00
CPC分类号： F28F13/08 , F28F1/04 , H01L23/467 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a heat sink including: a pipe for refrigerant movement including a first path, a third path having a cross-sectional area smaller than that of the first path in a thickness direction, and a second path connecting between the first and third paths and having a cross-sectional area in the thickness direction reduced from the first path toward the third path; and a case enclosing the pipe for refrigerant movement.
摘要翻译：本发明公开了一种散热器，包括：用于制冷剂运动的管道，包括第一路径，具有比第一路径的厚度方向的截面积小的第三路径，以及连接在第一和第三路径之间的第二路径并且具有从所述第一路径向所述第三路径减小的所述厚度方向的横截面积; 以及包围用于制冷剂运动的管的壳体。

7. 发明申请

US20130112388A1 HEAT SINK 审中-公开
标题翻译：散热器
公开(公告)号：US20130112388A1
公开(公告)日：2013-05-09
申请号：US13448797
申请日：2012-04-17
申请人： Young Hoon Kwak , Kyu Hwan Oh
发明人： Young Hoon Kwak , Kyu Hwan Oh
IPC分类号： F28F7/00
CPC分类号： H05K7/20254 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a heat sink including: a first region connected to a cooling water introduction part and having a plurality of first pins arranged therein; and a second region connected to a cooling water discharge part and having a plurality of second pins arranged therein.
摘要翻译：这里公开了一种散热器，包括：连接到冷却水引入部分并且具有布置在其中的多个第一销的第一区域; 以及连接到冷却水排出部分并且具有布置在其中的多个第二销的第二区域。

8. 发明申请

US20120161914A1 TRANSFORMER 审中-公开
标题翻译：变压器
公开(公告)号：US20120161914A1
公开(公告)日：2012-06-28
申请号：US13335377
申请日：2011-12-22
申请人： Hee Soo Yoon , Hee Soo Kim , Dong Jin Kim , Kyu Hwan Oh , Kyung Ho Lee , Kyoung Ho Lee , Su Bong Jang , Jeong Ho Yoon , Dong Hwan Lee
发明人： Hee Soo Yoon , Hee Soo Kim , Dong Jin Kim , Kyu Hwan Oh , Kyung Ho Lee , Kyoung Ho Lee , Su Bong Jang , Jeong Ho Yoon , Dong Hwan Lee
IPC分类号： H01F27/28
CPC分类号： H01F27/2804 , H01F2027/2809
摘要： There is provided a transformer having a minimized thickness. The transformer includes: insulating layers; and coil units including primary and secondary coils disposed on the insulating layers to have a common center.
摘要翻译：提供了具有最小厚度的变压器。变压器包括：绝缘层; 以及包括设置在绝缘层上以具有公共中心的初级和次级线圈的线圈单元。

9. 发明申请

US20070193659A1 Method for nitriding metal in salt bath and metal manufactured using the same 审中-公开
标题翻译：盐浴中金属氮化和使用其制造的金属的方法
公开(公告)号：US20070193659A1
公开(公告)日：2007-08-23
申请号：US11588370
申请日：2006-10-27
申请人： Hee Won Jung , Dong Nyung Lee , Young June Park , Dong Sam Kim , Kyu Hwan Oh , Yinzhong Shen
发明人： Hee Won Jung , Dong Nyung Lee , Young June Park , Dong Sam Kim , Kyu Hwan Oh , Yinzhong Shen
IPC分类号： C23C8/26
CPC分类号： C23C8/50
摘要： Provided is a method for nitriding a metal in a salt bath by using a non-cyanide salt and a nitrided metal manufactured using the same. The method includes the steps of: immerging at least one salt selected from the group consisting of KNO3, KNO2, Ca(NO3)2, NaNO3 and NaNO2 into the salt bath; melting the salt by heating and maintaining the molten salt at a predetermined temperature; and submerging the metal in the salt bath. Nitriding in non-cyanide salts, such as potassium nitrate (KNO3), potassium nitrite (KNO2), sodium nitrate (NaNO3), sodium nitrite (NaNO2), calcium nitrate (Ca(NO3)2) and their mixtures, is capable of solving an environmental pollution problem and reducing a cost. Also, the method is capable of increasing nitrided depth of the metal two to six times compared to conventional nitriding methods. As a result, the method can be carried out in various application fields.
摘要翻译：提供了通过使用非氰化物盐和使用其制造的氮化金属在盐浴中氮化金属的方法。该方法包括以下步骤：将至少一种选自KNO 3，KNO 2，Ca（NO 3 3）2的盐， 2 N 2，NaNO 3和NaNO 2进入盐浴; 通过加热和保持熔盐在预定温度来熔化盐; 并将金属浸入盐浴中。在非氰化物盐如硝酸钾（KNO 3 N），亚硝酸钾（KNO 2），硝酸钠（NaNO 3）中氮化，，亚硝酸钠（NaNO 2），硝酸钙（Ca（NO 3 3）2）及其混合物，能够解决环境污染问题并降低成本。此外，与常规氮化方法相比，该方法能够将金属的氮化深度提高两到六倍。结果，该方法可以在各种应用领域中进行。

10. 发明申请

US20070278634A1 AU-AG BASED ALLOY WIRE FOR SEMICONDUCTOR PACKAGE 失效
标题翻译：基于AU-AG的合金线用于半导体封装
公开(公告)号：US20070278634A1
公开(公告)日：2007-12-06
申请号：US11752729
申请日：2007-05-23
申请人： Jong Soo Cho , Yong Jin Park , Jeong Tak Moon , Eun Kyu Her , Kyu Hwan Oh
发明人： Jong Soo Cho , Yong Jin Park , Jeong Tak Moon , Eun Kyu Her , Kyu Hwan Oh
IPC分类号： H01L23/495
CPC分类号： H01L23/4952 , C22C5/02 , C22C30/00 , H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48624 , H01L2924/00011 , H01L2924/00014 , H01L2924/01012 , H01L2924/01013 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01038 , H01L2924/01041 , H01L2924/01042 , H01L2924/01043 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/01327 , H01L2924/20752 , H01L2924/00 , H01L2924/013 , H01L2224/43 , H01L2924/01049
摘要： A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.
摘要翻译：用于半导体封装的金银基线具有高湿度可靠性以及高干燥可靠性。电线包括第一添加剂成分，其含有5〜15重量％的由添加到金（Au） - 银（Ag）基的钯（Pd）和铂（Pt）组成的第一组元素中的至少一种元素合金，其含有10〜40重量％的Ag添加到Au中。

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