会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Method of forming vias in semiconductor substrates and resulting structures
    • 在半导体衬底和结构中形成通孔的方法
    • US07855140B2
    • 2010-12-21
    • US11781083
    • 2007-07-20
    • Charles M. WatkinsKyle K. KirbyAlan G. WoodSalman AkramWarren M. Farnworth
    • Charles M. WatkinsKyle K. KirbyAlan G. WoodSalman AkramWarren M. Farnworth
    • H01L21/4763
    • H01L21/76898
    • Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from an active surface through a conductive element thereon and a portion of the substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from a back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by laser ablation or drilling from the back surface of the substrate followed by dry etching to complete the through via.
    • 公开了在半导体衬底中形成贯通孔的方法和所得到的结构。 在一个实施例中,可以通过从活性表面通过其上的导电元件和导电元件下面的基底的一部分形成部分通孔来形成通孔。 然后可以通过从后表面的激光烧蚀或钻孔来完成通孔。 在另一个实施例中,部分通孔可以通过激光烧蚀或从衬底的背面钻孔到其中的预定距离来形成。 通孔可以通过形成延伸通过导电元件和下面的衬底以与激光钻孔的部分通孔相交的部分通孔从活性表面完成。 在另一个实施例中,可以首先通过激光烧蚀或从衬底的背面进行钻孔形成部分通孔,然后通过干蚀刻来完成通孔。
    • 8. 发明授权
    • Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages
    • 用于制造图像传感器封装等的框架结构和半导体附着工艺以及所产生的封装
    • US07645635B2
    • 2010-01-12
    • US10919604
    • 2004-08-16
    • Alan G. WoodKyle K. KirbyWarren M. FarnworthSalman Akram
    • Alan G. WoodKyle K. KirbyWarren M. FarnworthSalman Akram
    • H01L21/00
    • H01L27/14618B33Y80/00H01L27/14625H01L2224/48091H01L2924/00014
    • A semiconductor package such as an image sensor package, and methods for fabrication. A frame structure includes an array of frames, each having an aperture therethrough, into which an image sensor die in combination with a cover glass, filter, lens or other components may be installed in precise mutual alignment. Singulated image sensor dice and other components may be picked and placed into each frame of the frame structure. Alternatively, the frame structure may be configured to be aligned with and joined to a wafer bearing a plurality of image sensor dice, wherein optional, downwardly protruding skirts along peripheries of the frames may be received into kerfs cut along streets between die locations on the wafer, followed by installation of other package components. In either instance, the frame structure in combination with singulated image sensor dice or a joined wafer is singulated into individual image sensor packages. Various external connection approaches may be used for the packages.
    • 诸如图像传感器封装的半导体封装以及制造方法。 框架结构包括每个具有穿过其中的孔的框架阵列,图像传感器与盖玻片,过滤器,透镜或其它部件组合的模具可以精确相互对准地安装在该框架中。 单片图像传感器骰子和其他组件可以被拾取并放置在框架结构的每个帧中。 或者,框架结构可以被配置为与承载多个图像传感器骰子的晶片对准并且连接到其上,其中沿着框架的周边的任选的向下突出的裙边可以被接收到沿着晶片上的模具位置之间沿着街道切割的切口 ,然后安装其他包装组件。 在任一情况下,将帧结构与单独的图像传感器芯片或连接的晶片组合成单独的图像传感器封装。 各种外部连接方法可用于包装。
    • 9. 发明授权
    • Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
    • 在半导体衬底中形成通孔的方法,而不损坏其有效区域和结果
    • US07598167B2
    • 2009-10-06
    • US11140402
    • 2005-05-27
    • Charles M. WatkinsKyle K. KirbyAlan G. WoodSalman AkramWarren M. Farnworth
    • Charles M. WatkinsKyle K. KirbyAlan G. WoodSalman AkramWarren M. Farnworth
    • H01L21/4763
    • H01L21/76898
    • Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from the active surface through a conductive element thereon and a portion of the semiconductor substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from the back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a semiconductor substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying semiconductor substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by ablation or drilling from the back surface of the semiconductor substrate followed by dry etching to complete the through via and expose the underside of the conductive element.
    • 公开了在半导体衬底中形成贯通孔的方法和所得到的结构。 在一个实施例中,通孔可以通过在其上的导电元件和导电元件下面的半导体衬底的一部分从活性表面形成部分通孔而形成通孔。 然后可以通过从后表面的激光烧蚀或钻孔来完成通孔。 在另一个实施例中,部分通孔可以通过激光烧蚀或从半导体衬底的背面钻孔到其中的预定距离来形成。 通孔可以通过形成延伸穿过导电元件和下面的半导体衬底以与激光钻孔的部分通孔相交的部分通孔从活性表面完成。 在另一个实施例中,可以首先通过从半导体衬底的后表面进行烧蚀或钻孔形成部分通孔,然后进行干法蚀刻以完成通孔并暴露导电元件的下侧。