专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060039598A1 Method and apparatus for inspecting substrate pattern 有权
标题翻译：检查基板图案的方法和装置
公开(公告)号：US20060039598A1
公开(公告)日：2006-02-23
申请号：US11207772
申请日：2005-08-22
申请人： Kye-Weon Kim , Chung-Sam Jun , Ki-Suk Chung , Sang-Mun Chon , Seong-Jin Kim , Byung-Sug Lee , Yu-Sin Yang
发明人： Kye-Weon Kim , Chung-Sam Jun , Ki-Suk Chung , Sang-Mun Chon , Seong-Jin Kim , Byung-Sug Lee , Yu-Sin Yang
IPC分类号： G06K9/00
CPC分类号： G01N21/21 , G01N21/33 , G01N21/9501 , G01N21/95607 , G01N2021/95615
摘要： A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.
摘要翻译：公开了使用统计推断功能检查检查图案的方法。关于由参考基板上的感兴趣单元处理形成的多个参考图案的光参考信号数据和参考图案特征数据，产生推理函数。

2. 发明授权

US07385689B2 Method and apparatus for inspecting substrate pattern 有权
标题翻译：检查基板图案的方法和装置
公开(公告)号：US07385689B2
公开(公告)日：2008-06-10
申请号：US11207772
申请日：2005-08-22
申请人： Kye-Weon Kim , Chung-Sam Jun , Ki-Suk Chung , Sang-Mun Chon , Seong-Jin Kim , Byung-Sug Lee , Yu-Sin Yang
发明人： Kye-Weon Kim , Chung-Sam Jun , Ki-Suk Chung , Sang-Mun Chon , Seong-Jin Kim , Byung-Sug Lee , Yu-Sin Yang
IPC分类号： G01N21/00
CPC分类号： G01N21/21 , G01N21/33 , G01N21/9501 , G01N21/95607 , G01N2021/95615
摘要： A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.
摘要翻译：公开了使用统计推断功能检查检查图案的方法。关于由参考基板上的感兴趣单元处理形成的多个参考图案的光参考信号数据和参考图案特征数据，产生推理函数。

3. 发明授权

US06870948B2 Method and apparatus for numerically analyzing grain growth on semiconductor wafer using SEM image 失效
标题翻译：使用SEM图像对半导体晶片上的晶粒生长进行数值分析的方法和装置
公开(公告)号：US06870948B2
公开(公告)日：2005-03-22
申请号：US09977238
申请日：2001-10-16
申请人： Chung-sam Jun , Sang-Mun Chon , Sang-Bong Choi , Kye-Weon Kim , Sang-Hoon Lee , Yu-Sin Yang , Sang-Min Kim , Sang-Kil Lee
发明人： Chung-sam Jun , Sang-Mun Chon , Sang-Bong Choi , Kye-Weon Kim , Sang-Hoon Lee , Yu-Sin Yang , Sang-Min Kim , Sang-Kil Lee
IPC分类号： G01B15/00 , G01B15/08 , G01N15/00 , G01N15/14 , G01N23/20 , G01N23/225 , G06T1/00 , G06T7/00 , H01L21/66 , G06K9/00 , H01L21/8242
CPC分类号： G06T7/0004 , G01N15/1475 , G01N2015/0092 , G06T2207/30148 , H01J2237/2815
摘要： A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images. After comparing standardized image data values of the respective pixels with a predetermined threshold value, the number of pixels whose standardized image data value is greater than the threshold value is counted. The growth degree of grains on the surface of the wafer is calculated by numerating a ratio of the counted number with respect to a total number of the pixels contained within the analysis target image.
摘要翻译：一种用于数值分析生长在半导体晶片的表面上的晶粒的生长度的方法和装置，其中通过使用由半导体晶片的表面扫描的半导体晶片的表面的图像文件自动计算和计算晶粒的生长度 SEM。使用SEM扫描晶片的表面的预定部分，并将扫描的SEM图像同时存储到数据库中。自动数值程序将网格应用于分析屏幕框架，并在测量图像上选择分析区域。此后，使用相邻像素的图像数据的平均值对由网格指定的各个像素执行用于减少噪声的影响的平滑处理。然后基于相应的图像执行标准化处理，以便去除所测量的图像之间的亮度差异。在将各像素的标准化图像数据值与预定阈值进行比较之后，对标准化图像数据值大于阈值的像素数进行计数。通过对计数的数量相对于分析对象图像中包含的像素的总数的比率进行计算来计算晶片表面上的晶粒的生长度。

4. 发明授权

US07486392B2 Method of inspecting for defects and apparatus for performing the method 有权
标题翻译：检查缺陷的方法和执行该方法的装置
公开(公告)号：US07486392B2
公开(公告)日：2009-02-03
申请号：US11476651
申请日：2006-06-29
申请人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
发明人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/4738
摘要： In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.
摘要翻译：在检查物体的方法中，将第一光照射到裸物体上，并且从裸物体反射第一反射信号。将第二光照射到经处理的物体上，并且第二反射信号从被处理物体反射。第一和第二反射信号被微分，从而产生相应的第一和第二差分信号。通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。从对应于信号偏离部分的处理对象的一部分检测缺陷。

5. 发明申请

US20070002317A1 Method of inspecting for defects and apparatus for performing the method 有权
标题翻译：检查缺陷的方法和执行该方法的装置
公开(公告)号：US20070002317A1
公开(公告)日：2007-01-04
申请号：US11476651
申请日：2006-06-29
申请人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
发明人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/4738
摘要： In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.
摘要翻译：在检查物体的方法中，将第一光照射到裸物体上，并且从裸物体反射第一反射信号。将第二光照射到经处理的物体上，并且第二反射信号从被处理物体反射。第一和第二反射信号被微分，从而产生相应的第一和第二差分信号。通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。从对应于信号偏离部分的处理对象的一部分检测缺陷。

6. 发明授权

US07446865B2 Method of classifying defects 有权
标题翻译：分类缺陷的方法
公开(公告)号：US07446865B2
公开(公告)日：2008-11-04
申请号：US11421019
申请日：2006-05-30
申请人： Ki-Suk Chung , Chung-Sam Jun , Yu-Sin Yang , Byung-Sug Lee , Ji-Young Shin , Tae-Sung Kim
发明人： Ki-Suk Chung , Chung-Sam Jun , Yu-Sin Yang , Byung-Sug Lee , Ji-Young Shin , Tae-Sung Kim
IPC分类号： G01N21/00
CPC分类号： G06T7/0004
摘要： A method of classifying defects of an object includes irradiating multi-wavelength light onto the object, splitting light reflected from the object into light beams, each of the light beams having different wavelengths, obtaining image information of the object based on each of the light beams, forming a characteristic matrix that represent the wavelengths and the image information, and analyzing the characteristic matrix to determine types of the defects on the object. Thus, the defects may be accurately classified using a difference between reactivity of each of the defects in accordance with variations of the wavelengths and inspection conditions.
摘要翻译：对物体的缺陷进行分类的方法包括将多波长光照射到物体上，将从物体反射的光分成光束，每个光束具有不同的波长，基于每个光束获得物体的图像信息，形成表示波长和图像信息的特征矩阵，并且分析特征矩阵以确定对象上的缺陷的类型。因此，可以使用根据波长的变化和检查条件的每个缺陷的反应性之间的差异来精确地分类缺陷。

7. 发明授权

US07573568B2 Method and apparatus for detecting a photolithography processing error, and method and apparatus for monitoring a photolithography process 有权
标题翻译：用于检测光刻处理误差的方法和装置，以及用于监测光刻工艺的方法和装置
公开(公告)号：US07573568B2
公开(公告)日：2009-08-11
申请号：US10909238
申请日：2004-07-30
申请人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
发明人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G03F7/70608 , G03F7/70616
摘要： An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.
摘要翻译：用于监测光刻工艺的装置包括测量器和数据处理器。测量器测量衬底的光学特性。数据处理器基于光学测量器来确定衬底的缺陷。

8. 发明授权

US06927077B2 Method and apparatus for measuring contamination of a semiconductor substrate 失效
标题翻译：用于测量半导体衬底的污染物的方法和装置
公开(公告)号：US06927077B2
公开(公告)日：2005-08-09
申请号：US10704753
申请日：2003-11-12
申请人： Tae-Min Eom , Yu-Sin Yang , Kwan-Woo Ryu , Park-Song Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Tae-Min Eom , Yu-Sin Yang , Kwan-Woo Ryu , Park-Song Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： H01L21/66 , G01R31/303 , G01R31/311 , H01L21/00 , G01N21/00 , G01R31/302
CPC分类号： G01R31/303 , G01R31/311
摘要： An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.
摘要翻译：一种用于测量半导体衬底的污染的装置，包括用于装载衬底的卡盘，位置检测装置，用于识别所加载的衬底的前表面，以获得要测量的衬底的一部分的位置数据，用于移动的第一驱动部件所述卡盘根据位置数据来测量所述基板的后部;以及表面测量装置，设置在所述卡盘下方，用于选择性地测量所述基板的后部处的所述基板的金属污染。在操作中，将基板装载到卡盘上，通过识别形成在基板上的图案来获得要测量的基板的一部分的位置数据，然后根据位置数据移动基板，以测量基板的后部衬底和金属污染物在衬底的后部被选择性地测量。

9. 发明授权

US07310140B2 Method and apparatus for inspecting a wafer surface 有权
标题翻译：检查晶片表面的方法和装置
公开(公告)号：US07310140B2
公开(公告)日：2007-12-18
申请号：US10877684
申请日：2004-06-25
申请人： Tae-Min Eom , Yu-Sin Yang , Chung-Sam Jun , Yun-Jung Jee , Joung-Soo Kim , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi
发明人： Tae-Min Eom , Yu-Sin Yang , Chung-Sam Jun , Yun-Jung Jee , Joung-Soo Kim , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/55 , G01N2021/556
摘要： In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.
摘要翻译：在用于检查晶片表面的方法和装置中，将晶片装入室中。将包括用于感测晶片的垂直位置的第一光和用于检查晶片表面的第二光的入射光照射到晶片上。第一光被反射在晶片的检查区域或下一个检查区域上，并被检测以控制晶片位置。第二光被分散在检查区域上，并被检测以检查检查区域的晶片表面。在检查晶片的检查区域的表面之前检查晶片的位置信息并调整晶片的位置，以便能够精确地检查晶片表面。

10. 发明申请

US20060082766A1 Method of inspecting defects and apparatus for performing the same 有权
标题翻译：检查缺陷的方法及其执行装置
公开(公告)号：US20060082766A1
公开(公告)日：2006-04-20
申请号：US11253028
申请日：2005-10-17
申请人： Joung-Soo Kim , Sang-Mun Chon , Chung-Sam Jun , Yu-Sin Yang
发明人： Joung-Soo Kim , Sang-Mun Chon , Chung-Sam Jun , Yu-Sin Yang
IPC分类号： G01N21/88
CPC分类号： G01N21/95607 , G01N21/21 , G01N21/47
摘要： In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.
摘要翻译：在检查缺陷的方法中，基于作为检查条件的第一特征参数来检查实际物体的第一实际区域。确定实际物体的检查区域从第一实际区域变为第二实际区域的点。然后基于作为检查条件的第二特征参数检查第二实际区域。第一和第二参数可以包括从参考对象反射的光的对比度，光的强度，光的亮度，参考对象上的微小结构的大小等。每个参考区域的特征参数在参考对象被设置。因此，可以将缺陷精确地分类，从而可以显着降低检查缺陷的时间和成本。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式