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1. 发明授权

US08120973B2 Write driver of semiconductor memory device 有权
标题翻译：写半导体存储器件的驱动器
公开(公告)号：US08120973B2
公开(公告)日：2012-02-21
申请号：US12487181
申请日：2009-06-18
申请人： Mun-Phil Park , Kwi-Dong Kim , Sung-Ho Kim
发明人： Mun-Phil Park , Kwi-Dong Kim , Sung-Ho Kim
IPC分类号： G11C7/00
CPC分类号： G11C7/1078 , G11C7/1096 , G11C8/08
摘要： A semiconductor memory device includes a first memory bank and a second memory bank and a common write driver configured to drive write data to an activated memory bank of the first memory bank and the second memory bank. The common write driver of the semiconductor memory device includes a common write control block configured to generate common drive control signals corresponding to write data, and a common write drive block configured to drive transmission lines of a first memory bank or transmission lines of a second memory bank that are selected by a bank selection signal in response to the common drive control signals.
摘要翻译：半导体存储器件包括第一存储器组和第二存储器组以及公共写入驱动器，其被配置为将写入数据驱动到第一存储器组和第二存储器组的激活存储器组。半导体存储器件的公共写入驱动器包括：公共写入控制块，被配置为产生与写入数据相对应的公共驱动控制信号，以及公共写入驱动块，被配置为驱动第一存储体的传输线或第二存储器的传输线存储体，其响应于公共驱动控制信号由存储体选择信号选择。

2. 发明授权

US08379473B2 Semiconductor memory device and method for operating the same 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08379473B2
公开(公告)日：2013-02-19
申请号：US12614867
申请日：2009-11-09
申请人： Kwi-Dong Kim , Mun-Phil Park , Sung-Ho Kim
发明人： Kwi-Dong Kim , Mun-Phil Park , Sung-Ho Kim
IPC分类号： G11C8/00
CPC分类号： G11C7/10 , G11C8/18 , G11C11/4076 , G11C11/4096
摘要： A semiconductor memory device includes first and second write driving blocks to perform a data write operation on first and second memory banks in response to first and second bank strobe signals, respectively, and a common input driving block to transmit data to the first and second write driving blocks through a common data line in response to access information of the first and second memory banks.
摘要翻译：半导体存储器件包括分别响应于第一和第二存储体选通信号而对第一和第二存储体执行数据写入操作的第一和第二写入驱动块，以及用于将数据传输到第一和第二写入的公共输入驱动块驱动块通过公共数据线响应于第一和第二存储体的访问信息。

3. 发明授权

US08233338B2 Multi-bit test control circuit 有权
标题翻译：多位测试控制电路
公开(公告)号：US08233338B2
公开(公告)日：2012-07-31
申请号：US12792444
申请日：2010-06-02
申请人： Kwi-Dong Kim , Mun-Phil Park , Sung-Ho Kim
发明人： Kwi-Dong Kim , Mun-Phil Park , Sung-Ho Kim
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C29/26 , G11C2029/2602
摘要： A multi-bit test control circuit includes an operation unit, a delay unit, and a generation unit. The operation unit is configured to combine a single source signal inputted to each bank with a delay signal generated by delaying the source signal by a certain time to generate a first pulse signal. The delay unit is configured to delay the first pulse signal by a certain time. The generation unit is configured to combine an output signal of the operation unit with an output signal of the delay unit to generate a second pulse signal for a bank interleaving multi-bit test.
摘要翻译：多位测试控制电路包括操作单元，延迟单元和生成单元。操作单元被配置为将输入到每个存储体的单个源信号与通过将源信号延迟一定时间而产生的延迟信号组合以产生第一脉冲信号。延迟单元被配置为将第一脉冲信号延迟一定时间。生成单元被配置为将操作单元的输出信号与延迟单元的输出信号组合，以产生用于存储体交叉多位测试的第二脉冲信号。

4. 发明申请

US20110002179A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US20110002179A1
公开(公告)日：2011-01-06
申请号：US12614867
申请日：2009-11-09
申请人： Kwi-Dong Kim , Mun-Phil Park , Sung-Ho Kim
发明人： Kwi-Dong Kim , Mun-Phil Park , Sung-Ho Kim
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C7/10 , G11C8/18 , G11C11/4076 , G11C11/4096
摘要： A semiconductor memory device includes first and second write driving blocks to perform a data write operation on first and second memory banks in response to first and second bank strobe signals, respectively, and a common input driving block to transmit data to the first and second write driving blocks through a common data line in response to access information of the first and second memory banks.
摘要翻译：半导体存储器件包括分别响应于第一和第二存储体选通信号而对第一和第二存储体执行数据写入操作的第一和第二写入驱动块，以及用于将数据传输到第一和第二写入的公共输入驱动块驱动块通过公共数据线响应于第一和第二存储体的访问信息。

5. 发明申请

US20110103163A1 MULTI-BIT TEST CONTROL CIRCUIT 有权
标题翻译：多位测试控制电路
公开(公告)号：US20110103163A1
公开(公告)日：2011-05-05
申请号：US12792444
申请日：2010-06-02
申请人： Kwi-Dong Kim , Mun-Phil Park , Sung-Ho Kim
发明人： Kwi-Dong Kim , Mun-Phil Park , Sung-Ho Kim
IPC分类号： G11C7/00 , G11C29/00
CPC分类号： G11C29/26 , G11C2029/2602
摘要： A multi-bit test control circuit includes an operation unit, a delay unit, and a generation unit. The operation unit is configured to combine a single source signal inputted to each bank with a delay signal generated by delaying the source signal by a certain time to generate a first pulse signal. The delay unit is configured to delay the first pulse signal by a certain time. The generation unit is configured to combine an output signal of the operation unit with an output signal of the delay unit to generate a second pulse signal for a bank interleaving multi-bit test.
摘要翻译：多位测试控制电路包括操作单元，延迟单元和生成单元。操作单元被配置为将输入到每个存储体的单个源信号与通过将源信号延迟一定时间而产生的延迟信号组合以产生第一脉冲信号。延迟单元被配置为将第一脉冲信号延迟一定时间。生成单元被配置为将操作单元的输出信号与延迟单元的输出信号组合，以产生用于存储体交叉多位测试的第二脉冲信号。

6. 发明申请

US20100246296A1 Write Driver and Semiconductor Memory Device Using the Same 有权
标题翻译：使用相同的驱动器和半导体存储器件
公开(公告)号：US20100246296A1
公开(公告)日：2010-09-30
申请号：US12487181
申请日：2009-06-18
申请人： Mun-Phil Park , Kwi-Dong Kim , Sung-Ho Kim
发明人： Mun-Phil Park , Kwi-Dong Kim , Sung-Ho Kim
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C7/1078 , G11C7/1096 , G11C8/08
摘要： A semiconductor memory device includes a first memory bank and a second memory bank and a common write driver configured to drive write data to an activated memory bank of the first memory bank and the second memory bank. The common write driver of the semiconductor memory device includes a common write control block configured to generate common drive control signals corresponding to write data, and a common write drive block configured to drive transmission lines of a first memory bank or transmission lines of a second memory bank that are selected by a bank selection signal in response to the common drive control signals.
摘要翻译：半导体存储器件包括第一存储器组和第二存储器组以及公共写入驱动器，其被配置为将写入数据驱动到第一存储器组和第二存储器组的激活存储器组。半导体存储器件的公共写入驱动器包括：公共写入控制块，被配置为产生与写入数据相对应的公共驱动控制信号;以及公共写入驱动块，被配置为驱动第一存储体的传输线或第二存储器的传输线存储体，其响应于公共驱动控制信号由存储体选择信号选择。

7. 发明授权

US09293567B2 Laser crystallization apparatus and method 有权
标题翻译：激光结晶装置及方法
公开(公告)号：US09293567B2
公开(公告)日：2016-03-22
申请号：US13828242
申请日：2013-03-14
申请人： Sung-Ho Kim , Min-Hwan Choi
发明人： Sung-Ho Kim , Min-Hwan Choi
IPC分类号： C30B1/04 , H01L29/66 , H01L21/02 , H01L27/12 , B23K26/06 , B23K26/08
CPC分类号： H01L29/6675 , B23K26/0608 , B23K26/083 , H01L21/02002 , H01L21/02532 , H01L21/02675 , H01L27/1285 , H01L29/66757
摘要： A laser crystallization apparatus includes a laser generator that generates a laser beam, a stage mounted with an object substrate with an object thin film to which the laser beam is firstly incident, the stage is relatively movable such that the laser beam scans the object thin film for crystallization, and a reflection mirror that secondly reflects a second reflection laser beam to the object thin film from a first reflection laser beam that is reflected from the object thin film to the reflection mirror.
摘要翻译：激光结晶装置包括产生激光束的激光发生器，安装有目标基板的载物台，激光束首先入射到该目标薄膜上，所述载物台相对移动，使得激光束扫描物体薄膜以及反射镜，其从从物体薄膜反射到反射镜的第一反射激光束将第二反射激光束二次反射到物体薄膜。

8. 发明授权

US08941602B2 Display device having touch sensor and method for driving the same 有权
标题翻译：具有触摸传感器的显示装置及其驱动方法
公开(公告)号：US08941602B2
公开(公告)日：2015-01-27
申请号：US13226887
申请日：2011-09-07
申请人： Sung-Chul Kim , Chang-Su Kyeong , Dae-Jin Myoung , Dae-Kyu Yi , Sung-Ho Kim , Seung-Rok Shin
发明人： Sung-Chul Kim , Chang-Su Kyeong , Dae-Jin Myoung , Dae-Kyu Yi , Sung-Ho Kim , Seung-Rok Shin
IPC分类号： G06F3/041 , G06F3/044 , G09G3/36 , G02F1/1333
CPC分类号： G06F3/0418 , G02F1/13338 , G06F3/044 , G09G3/3648 , G09G2300/0434 , G09G2310/08 , G09G2330/06
摘要： The present invention relates to a display device having a touch sensor in which the touch sensor is driven in a period which has a small noise component from the display device to reduce influence from the noise for minimizing a touch error; and a method for driving the same.The display device having a touch sensor includes a display panel, a panel driving unit for driving the display panel, a timing controller for controlling driving timing of the panel driving unit, a touch sensor integrated with the display panel attached thereto or built therein, and a touch controller for driving the touch sensor in a no noise period excluding a period in which the noise is generated periodically from the display panel by using at least one synchronizing signal from the timing controller, and calculating touch coordinates from a signal from the touch sensor and forwarding the touch coordinates.
摘要翻译：本发明涉及一种具有触摸传感器的显示装置，其中触摸传感器在来自显示装置的噪声分量较小的时段内被驱动，以减少噪声对触摸误差的影响; 及其驱动方法。具有触摸传感器的显示装置包括显示面板，用于驱动显示面板的面板驱动单元，用于控制面板驱动单元的驱动定时的定时控制器，与安装在其上或内置的显示面板集成的触摸传感器，以及触摸控制器，用于通过使用来自定时控制器的至少一个同步信号，在不包括周期性地从显示面板产生噪声的周期的无噪声时段内驱动触摸传感器，以及根据来自触摸传感器的信号来计算触摸坐标并转发触摸坐标。

9. 发明授权

US08674362B2 Organic light emitting display device and method for manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08674362B2
公开(公告)日：2014-03-18
申请号：US13200405
申请日：2011-09-23
申请人： Sung-Ho Kim , Jong-Hyun Choi
发明人： Sung-Ho Kim , Jong-Hyun Choi
IPC分类号： H01L29/04
CPC分类号： H01L27/3258 , H01L51/5275
摘要： An exemplary embodiment may include a substrate, an insulating layer on the substrate, and a pixel electrode including a transparent conductive layer on the insulating layer. A portion of a surface of the insulating layer contacting the transparent conductive layer has a plurality of recessed holes formed by etching with an etchant into an interface between the transparent conductive layer of the pixel electrode and the insulating layer.
摘要翻译：示例性实施例可以包括衬底，衬底上的绝缘层，以及在绝缘层上包括透明导电层的像素电极。绝缘层的与透明导电层接触的表面的一部分具有通过用蚀刻剂蚀刻到像素电极的透明导电层和绝缘层之间的界面中而形成的多个凹陷孔。

10. 发明授权

US08629696B2 Semiconductor device and level shifting circuit for the same 有权
标题翻译：半导体器件和电平移位电路相同
公开(公告)号：US08629696B2
公开(公告)日：2014-01-14
申请号：US13334012
申请日：2011-12-21
申请人： Sung-Ho Kim
发明人： Sung-Ho Kim
IPC分类号： H03K3/00
CPC分类号： H03K19/018521
摘要： A level shifting circuit includes an inverter inverting an input voltage of an input node and driving a first voltage of a first node, a first output driving unit driving an output voltage of an output node to a first level in response to the first voltage of the first node, a first connection unit electrically coupling the first node to a second node or electrically isolating the first node from the second node in response to the first voltage of the first node, an internal driving unit driving a second voltage of the second node to a second level in response to the input voltage of the input node and the output voltage of the output node, and a second output driving unit driving the output voltage of the output node to the second level in response to the second voltage of the second node.
摘要翻译：电平移位电路包括反相输入节点的输入电压并驱动第一节点的第一电压的逆变器，响应于第一电压的第一电压将输出节点的输出电压驱动到第一电平的第一输出驱动单元第一节点，响应于第一节点的第一电压将第一节点电耦合到第二节点或将第一节点与第二节点电隔离的第一连接单元，驱动第二节点的第二电压的内部驱动单元响应于输入节点的输入电压和输出节点的输出电压的第二电平;以及第二输出驱动单元，响应于第二节点的第二电压将输出节点的输出电压驱动到第二电平。

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