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    • 5. 发明授权
    • System for controlling an overlay, method for controlling overlay, and method for manufacturing a semiconductor device
    • 用于控制覆盖层的系统,用于控制覆盖层的方法以及用于制造半导体器件的方法
    • US07556899B2
    • 2009-07-07
    • US11389114
    • 2006-03-27
    • Makoto IkedaShoichi HarakawaTakuya Kono
    • Makoto IkedaShoichi HarakawaTakuya Kono
    • G03F9/00G06F19/00
    • G03F7/70633G03F7/70525
    • A system for controlling an overlay includes a processing data receiving module receiving a processing data string describing a name of an exposure process for a target layer and an original control set value of overlays between the target layer and underlying layers below the target layer; an inspection data receiving module receiving inspection data strings describing names of inspection processes and inspection values determined by the inspection processes inspecting respective overlays between the target layer and the underlying layers; a data combining module combining the processing data string and each of the inspection data strings using a combining condition table so as to create a correction data table; and a control set value calculation module calculating a corrected control set value based on the inspection values of the correction data table.
    • 用于控制覆盖的系统包括处理数据接收模块,其接收描述目标层的曝光处理的名称的处理数据串和目标层之下的目标层和下层之间的覆盖层的原始控制集值; 检查数据接收模块,接收描述由检查过程确定的检查过程名称和检查值的检查数据串,检查目标层和下层之间的各个覆盖层; 数据组合模块,其使用组合条件表来组合处理数据串和每个检查数据串,以便创建校正数据表; 以及控制设定值计算模块,基于校正数据表的检查值来计算校正后的控制设定值。
    • 8. 发明授权
    • Exposure processing system, exposure processing method and method for manufacturing a semiconductor device
    • 曝光处理系统,曝光处理方法以及半导体装置的制造方法
    • US07630052B2
    • 2009-12-08
    • US11024322
    • 2004-12-29
    • Takuya KonoNobuhiro KomineTatsuhiko HigashikiShoichi HarakawaMakato Ikeda
    • Takuya KonoNobuhiro KomineTatsuhiko HigashikiShoichi HarakawaMakato Ikeda
    • G03B27/32G03B27/54G03D5/00G03C5/00H01L21/00
    • H01L21/67253
    • An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.
    • 曝光处理系统包括:曝光装置,用于在晶片上曝光抗蚀剂,加热装置包括加热装置单元,加热装置通过加热装置单元中的加热装置加热曝光的抗蚀剂;显影装置,包括显影装置单元, 显影装置通过显影装置单元中的显影装置单元显影曝光和加热的抗蚀剂;以及控制装置,通过使用校正数据来控制曝光装置,使得处理对象被曝光的晶片,校正数据是用于校正的数据 由一对加热装置单元和用于处理对象上的晶片的显影装置单元引起的抗蚀剂图案的尺寸分散,所述一对加热显影装置单元包括使用的加热和显影装置中的加热和显影装置单元 用于处理对象上的晶圆。