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1. 发明申请

US20100155963A1 DUMMY VIAS FOR DAMASCENE PROCESS 有权
标题翻译： DAMASCENE过程的DUMMY VIAS
公开(公告)号：US20100155963A1
公开(公告)日：2010-06-24
申请号：US12716980
申请日：2010-03-03
申请人： Kuei Shun Chen , Chin-Hsiang Lin , Vencent Chang , Lawrence Lin , Lai Chien Wen , Jhun Hua Chen
发明人： Kuei Shun Chen , Chin-Hsiang Lin , Vencent Chang , Lawrence Lin , Lai Chien Wen , Jhun Hua Chen
IPC分类号： H01L23/48
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76813 , H01L21/7684 , H01L23/522 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device and method of making the integrated circuit device are disclosed. An exemplary apparatus includes: a semiconductor layer; and a dielectric layer on the semiconductor layer, the dielectric layer having conductive vias and dummy vias formed therein, wherein the conductive vias and dummy vias extend varying distances into the dielectric layer, the conductive vias extending through the dielectric layer to the semiconductor layer, and the dummy vias extending through the dielectric layer to a distance above the semiconductor layer.
摘要翻译：公开了一种集成电路器件及其制造方法。示例性装置包括：半导体层; 以及在该半导体层上的电介质层，该电介质层具有形成在其中的导电通孔和虚拟通孔，其中该导电通路和虚拟通孔将延伸到该介电层的变化距离，该导电通孔延伸穿过该介电层至该半导体层，以及虚拟通孔延伸穿过介电层到半导体层上方一段距离。

2. 发明授权

US07960821B2 Dummy vias for damascene process 有权
标题翻译：用于大马士革过程的虚拟通孔
公开(公告)号：US07960821B2
公开(公告)日：2011-06-14
申请号：US12716980
申请日：2010-03-03
申请人： Kuei Shun Chen , Chin-Hsiang Lin , Vencent Chang , Lawrence Lin , Lai Chien Wen , Jhun Hua Chen
发明人： Kuei Shun Chen , Chin-Hsiang Lin , Vencent Chang , Lawrence Lin , Lai Chien Wen , Jhun Hua Chen
IPC分类号： H01L21/00
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76813 , H01L21/7684 , H01L23/522 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device and method of making the integrated circuit device are disclosed. An exemplary apparatus includes: a semiconductor layer; and a dielectric layer on the semiconductor layer, the dielectric layer having conductive vias and dummy vias formed therein, wherein the conductive vias and dummy vias extend varying distances into the dielectric layer, the conductive vias extending through the dielectric layer to the semiconductor layer, and the dummy vias extending through the dielectric layer to a distance above the semiconductor layer.
摘要翻译：公开了一种集成电路器件及其制造方法。示例性装置包括：半导体层; 以及在该半导体层上的电介质层，该电介质层具有形成在其中的导电通孔和虚拟通孔，其中该导电通路和虚拟通孔将延伸到该介电层的变化距离，该导电通孔延伸穿过该介电层至该半导体层，以及虚拟通孔延伸穿过介电层到半导体层上方一段距离。

3. 发明授权

US07767570B2 Dummy vias for damascene process 有权
标题翻译：用于大马士革过程的虚拟通孔
公开(公告)号：US07767570B2
公开(公告)日：2010-08-03
申请号：US11457032
申请日：2006-07-12
申请人： Kuei Shun Chen , Chin-Hsiang Lin , Vencent Chang , Lawrence Lin , Lai Chien Wen , Jhun Hua Chen
发明人： Kuei Shun Chen , Chin-Hsiang Lin , Vencent Chang , Lawrence Lin , Lai Chien Wen , Jhun Hua Chen
IPC分类号： H01L21/00
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76813 , H01L21/7684 , H01L23/522 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method of making an integrated circuit includes providing a low-k dielectric layer on a substrate, the low-k dielectric layer including or adjacent to a plurality of conductive features; patterning the low-k dielectric layer to form trenches; patterning the low-k dielectric layer to form conductive vias and dummy vias, wherein each of the conductive vias is aligned with at least one of the plurality of the conductive features and at least one of the trenches, and each of the dummy vias is a distance above the plurality of conductive features; filling the trenches, conductive vias, and dummy vias using one or more conductive materials; and planarizing the conductive material(s).
摘要翻译：制造集成电路的方法包括在衬底上提供低k电介质层，低k电介质层包括或邻近多个导电特征; 图案化低k电介质层以形成沟槽; 图案化低k电介质层以形成导电通孔和虚拟通孔，其中每个导电通孔与多个导电特征和至少一个沟槽中的至少一个对准，并且每个虚拟通孔为在多个导电特征之上的距离; 使用一种或多种导电材料填充沟槽，导电通孔和虚拟通孔; 并平坦化导电材料。

4. 发明授权

US07226873B2 Method of improving via filling uniformity in isolated and dense via-pattern regions 有权
标题翻译：改善隔离和致密通孔图案区域中填充均匀性的方法
公开(公告)号：US07226873B2
公开(公告)日：2007-06-05
申请号：US10992668
申请日：2004-11-22
申请人： Yung-Sung Yen , Kuei-Shun Chen , Chia-Hsiang Lin , Lawrence Lin , Tsung Hsien Lin
发明人： Yung-Sung Yen , Kuei-Shun Chen , Chia-Hsiang Lin , Lawrence Lin , Tsung Hsien Lin
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02164 , H01L21/312 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An isotropic-diffusion filling method uses a thermal process on a result structure comprising a photoresist layer and an organic material layer to create a cross-linking layer there between, which minimizes step height differences between isolated and dense via-pattern regions for optimizing a subsequent trench process and simplifying process steps.
摘要翻译：各向同性扩散填充方法对包括光致抗蚀剂层和有机材料层的结果结构使用热处理，以在其之间形成交联层，这使隔离和密集的通孔图案区域之间的步长差最小化，以优化随后的沟槽工艺和简化工艺步骤。

5. 发明申请

US20060110941A1 Method of improving via filling uniformity in isolated and dense via-pattern regions 有权
标题翻译：改善隔离和致密通孔图案区域中填充均匀性的方法
公开(公告)号：US20060110941A1
公开(公告)日：2006-05-25
申请号：US10992668
申请日：2004-11-22
申请人： Yung-Sung Yen , Kuei-Shun Chen , Chia-Hsiang Lin , Lawrence Lin , T. Lin
发明人： Yung-Sung Yen , Kuei-Shun Chen , Chia-Hsiang Lin , Lawrence Lin , T. Lin
IPC分类号： H01L21/31
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02164 , H01L21/312 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An isotropic-diffusion filling method uses a thermal process on a result structure comprising a photoresist layer and an organic material layer to create a cross-linking layer there between, which minimizes step height differences between isolated and dense via-pattern regions for optimizing a subsequent trench process and simplifying process steps.
摘要翻译：各向同性扩散填充方法对包括光致抗蚀剂层和有机材料层的结果结构使用热处理，以在其之间形成交联层，这使隔离和密集的通孔图案区域之间的步长差最小化，以优化随后的沟槽工艺和简化工艺步骤。

6. 发明授权

US06833318B2 Gap-filling process 有权
标题翻译：间隙填充过程
公开(公告)号：US06833318B2
公开(公告)日：2004-12-21
申请号：US10065803
申请日：2002-11-20
申请人： Chun-Jen Weng , Juan-Yi Chen , Hong-Tsz Pan , Cedric Lee , Der-Yuan Wu , Jackson Lin , Yeong-Song Yen , Lawrence Lin , Ying-Chung Tseng
发明人： Chun-Jen Weng , Juan-Yi Chen , Hong-Tsz Pan , Cedric Lee , Der-Yuan Wu , Jackson Lin , Yeong-Song Yen , Lawrence Lin , Ying-Chung Tseng
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/31144
摘要： A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.
摘要翻译：提供间隙填充过程。提供其上具有介电层的基板。电介质层中有一个开口。在电介质层和开口内部形成间隙填充材料层。间隙填充材料的一部分从间隙填充材料层去除以暴露电介质层。进行间隙填充材料层和电介质层的表面的间隙填充材料处理以使间隙填充材料层平坦化，从而在间隙填充材料上形成随后形成的底部抗反射涂层或材料层层可以具有高度的平面度。

7. 发明授权

US06615431B2 Portable massage bed 失效
标题翻译：便携式按摩床
公开(公告)号：US06615431B2
公开(公告)日：2003-09-09
申请号：US10002270
申请日：2001-11-15
申请人： Lawrence Lin
发明人： Lawrence Lin
IPC分类号： A61F500
CPC分类号： A61G13/105 , A61G13/009
摘要： An improved massage bed structure, which is foldable into a compact case to facilitate transport and storage, including a bed frame, a mattress, an inclination adjusting structure and a height adjusting structure. The inclination and height adjusting structures permit easy adjustment of the angles of inclination of a back pad and the massage bed, and the height of a waist and hip pad to comply with ergonomics. A pillow is provided to provide good support for the user's head and is capable of height and angle adjustment. A rest plate is mounted at the lower end of the pillow to provide support for the user's elbows to help the user to relax the shoulder muscles to thereby enhance massaging effects.
摘要翻译：一种改进的按摩床结构，其可折叠成小型壳体以促进运输和储存，包括床架，床垫，倾斜调节结构和高度调节结构。倾斜度和高度调节结构允许容易地调节背垫和按摩床的倾斜角度，以及腰部和臀部垫的高度以符合人体工程学。提供枕头以为用户的头部提供良好的支撑并且能够进行高度和角度调整。休息板安装在枕头的下端，为使用者的肘部提供支撑，以帮助使用者放松肩部肌肉，从而提高按摩效果。

8. 发明授权

US06684426B1 Folding collapsible massage bed 失效
标题翻译：折叠折叠按摩床
公开(公告)号：US06684426B1
公开(公告)日：2004-02-03
申请号：US10225694
申请日：2002-08-22
申请人： Lawrence Lin , Meng-Tsung Chen
发明人： Lawrence Lin , Meng-Tsung Chen
IPC分类号： A47B300
CPC分类号： A61G13/105 , A47B3/087 , A47B2200/0064 , A61G13/009
摘要： A folding collapsible massage bed constructed to include a bedstead formed of two equal open frames hinged together by leaved hinge means, two mattress elements respectively mounted on the open frames, two legs respectively pivoted to the open frames, two cord members bilaterally connected between the legs to limit the outward turning angle of the legs, four folding braces bilaterally symmetrically connected between the legs and hinge leaves of the hinge means, and locking means adapted for locking the folding braces in the extended position.
摘要翻译：折叠折叠式按摩床，其构造为包括由两个相等的开放框架形成的床架，所述床架通过有叶的铰链装置铰接在一起，分别安装在开放框架上的两个床垫元件，分别枢转到开放框架的两个腿部，两个帘线构件，以限制腿部的向外转动角度，四个双向对称地连接在铰链装置的腿部和铰链叶片之间的折叠支架以及适于将折叠支架锁定在伸出位置的锁定装置。

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