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1. 发明申请

US20080116578A1 Initiation layer for reducing stress transition due to curing 审中-公开
标题翻译：起始层，用于减少由于固化而引起的应力转变
公开(公告)号：US20080116578A1
公开(公告)日：2008-05-22
申请号：US11602857
申请日：2006-11-21
申请人： Kuan-Chen Wang , Zhen-Cheng Wu , Fang Wen Tsai , Yih-Hsing Lo , I-I Chen , Tien-I Bao , Shwang-Ming Jeng
发明人： Kuan-Chen Wang , Zhen-Cheng Wu , Fang Wen Tsai , Yih-Hsing Lo , I-I Chen , Tien-I Bao , Shwang-Ming Jeng
IPC分类号： H01L23/50 , H01L21/44
CPC分类号： H01L21/76834 , H01L21/76825 , H01L21/76832 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes an etch stop layer over a substrate; a UV blocker layer on the etch stop layer, wherein the UV blocker layer has a high extinction coefficient; and a low-k dielectric layer on the UV blocker layer.
摘要翻译：集成电路包括在衬底上的蚀刻停止层; 在所述蚀刻停止层上的UV阻挡层，其中所述UV阻挡层具有高消光系数; 和UV阻挡层上的低k电介质层。

2. 发明授权

US07465676B2 Method for forming dielectric film to improve adhesion of low-k film 有权
标题翻译：用于形成介电膜以改善低k膜的粘附性的方法
公开(公告)号：US07465676B2
公开(公告)日：2008-12-16
申请号：US11409658
申请日：2006-04-24
申请人： Fang Wen Tsai , I-I Chen , Zhen-Cheng Wu , Chih-Lung Lin , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
发明人： Fang Wen Tsai , I-I Chen , Zhen-Cheng Wu , Chih-Lung Lin , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76832 , H01L21/76843
摘要： A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.
摘要翻译：提供了具有改善的低k电介质层和下层之间的粘附性的半导体结构及其形成方法。所述半导体衬底包括半导体衬底上的电介质层，所述电介质层上的粘合层，其中所述粘合层包含初始子层上的过渡子层，并且其中所述过渡子层具有逐渐从下部到上部。在粘合层上形成低k电介质层。在低k电介质层中形成镶嵌开口。过渡子层的顶部具有与低k电介质层的组成基本相似的组成。过渡子层的底部具有与初始子层的组成基本相似的组成。

3. 发明申请

US20080188074A1 Peeling-free porous capping material 审中-公开
标题翻译：无剥离多孔封盖材料
公开(公告)号：US20080188074A1
公开(公告)日：2008-08-07
申请号：US11728623
申请日：2007-03-27
申请人： I-I Chen , Fang Wen Tsai , Zhen-Cheng Wu , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
发明人： I-I Chen , Fang Wen Tsai , Zhen-Cheng Wu , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a cap layer for an interconnect structure is provided. The method includes providing a substrate; depositing a low-k dielectric layer comprising a first porogen over the substrate; depositing a low-k cap layer comprising a second porogen on the low-k dielectric layer; and curing the low-k dielectric layer and the low-k cap layer simultaneously to remove the first and the second porogens, so that a first porosity in the low-k dielectric layer and a second porosity in the low-k cap layer are created. The second porosity is preferably less than the first porosity. Preferably, the low-k dielectric layer and the low-k cap layer comprise a common set of precursors and porogens, and are in-situ performed.
摘要翻译：提供一种用于形成互连结构的盖层的方法。该方法包括提供基板; 在衬底上沉积包含第一致孔剂的低k电介质层; 在低k电介质层上沉积包含第二致孔剂的低k覆盖层; 并且同时固化低k电介质层和低k覆盖层以除去第一和第二致孔剂，从而产生低k电介质层中的第一孔隙和低k覆盖层中的第二孔隙率。第二孔隙率优选小于第一孔隙率。优选地，低k电介质层和低k覆盖层包含一组共同的前体和致孔剂，并且原位进行。

4. 发明申请

US20070249159A1 Method for forming dielectric film to improve adhesion of low-k film 有权
标题翻译：用于形成介电膜以改善低k膜的粘附性的方法
公开(公告)号：US20070249159A1
公开(公告)日：2007-10-25
申请号：US11409658
申请日：2006-04-24
申请人： Fang Tsai , I-I Chen , Zhen-Cheng Wu , Chih-Lung Lin , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
发明人： Fang Tsai , I-I Chen , Zhen-Cheng Wu , Chih-Lung Lin , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76832 , H01L21/76843
摘要： A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.
摘要翻译：提供了具有改进的低k电介质层和下层之间的粘附性的半导体结构及其形成方法。所述半导体衬底包括半导体衬底上的电介质层，所述电介质层上的粘合层，其中所述粘合层包含初始子层上的过渡子层，并且其中所述过渡子层具有逐渐从下部到上部。在粘合层上形成低k电介质层。在低k电介质层中形成镶嵌开口。过渡子层的顶部具有与低k电介质层的组成基本相似的组成。过渡子层的底部具有与初始子层的组成基本相似的组成。

5. 发明申请

US20080272493A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080272493A1
公开(公告)日：2008-11-06
申请号：US11797310
申请日：2007-05-02
申请人： Chung-Chi Ko , Chia-Cheng Chou , Zhen-Cheng Wu , Keng-Chu Lin , Shwang-Ming Jeng
发明人： Chung-Chi Ko , Chia-Cheng Chou , Zhen-Cheng Wu , Keng-Chu Lin , Shwang-Ming Jeng
IPC分类号： H01L23/52
CPC分类号： H01L23/53295 , H01L21/563 , H01L21/7682 , H01L21/76825 , H01L23/5329 , H01L2224/73203 , H01L2224/73204 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079
摘要： A semiconductor device is disclosed. The device includes a substrate, a first porous SiCOH dielectric layer, a second porous SiCOH dielectric layer, and an oxide layer. The first porous SiCOH dielectric layer overlies the substrate. The second porous SiCOH dielectric layer overlies the first porous SiCOH dielectric layer. The oxide layer overlies the second porous SiCOH dielectric layer. The atomic percentage of carbon in the second porous SiCOH dielectric layer is between 16% and 22% of that in the first porous SiCOH dielectric layer.
摘要翻译：公开了一种半导体器件。该器件包括衬底，第一多孔SiCOH电介质层，第二多孔SiCOH电介质层和氧化物层。第一多孔SiCOH介电层覆盖在基底上。第二多孔SiCOH介电层覆盖第一多孔SiCOH介电层。氧化物层覆盖第二多孔SiCOH介电层。第二多孔SiCOH介电层中的碳的原子百分比在第一多孔SiCOH介电层中的原子百分比为16％至22％。

6. 发明授权

US07485949B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07485949B2
公开(公告)日：2009-02-03
申请号：US11797310
申请日：2007-05-02
申请人： Chung-Chi Ko , Chia-Cheng Chou , Zhen-Cheng Wu , Keng-Chu Lin , Shwang-Ming Jeng
发明人： Chung-Chi Ko , Chia-Cheng Chou , Zhen-Cheng Wu , Keng-Chu Lin , Shwang-Ming Jeng
IPC分类号： H01L23/58
CPC分类号： H01L23/53295 , H01L21/563 , H01L21/7682 , H01L21/76825 , H01L23/5329 , H01L2224/73203 , H01L2224/73204 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079
摘要： A semiconductor device is disclosed. The device includes a substrate, a first porous SiCOH dielectric layer, a second porous SiCOH dielectric layer, and an oxide layer. The first porous SiCOH dielectric layer overlies the substrate. The second porous SiCOH dielectric layer overlies the first porous SiCOH dielectric layer. The oxide layer overlies the second porous SiCOH dielectric layer. The atomic percentage of carbon in the second porous SiCOH dielectric layer is between 16% and 22% of that in the first porous SiCOH dielectric layer.
摘要翻译：公开了一种半导体器件。该器件包括衬底，第一多孔SiCOH电介质层，第二多孔SiCOH电介质层和氧化物层。第一多孔SiCOH介电层覆盖在基底上。第二多孔SiCOH介电层覆盖第一多孔SiCOH介电层。氧化物层覆盖第二多孔SiCOH介电层。第二多孔SiCOH介电层中的碳的原子百分比在第一多孔SiCOH介电层中的原子百分比为16％至22％。

7. 发明申请

US20120264253A1 METHOD OF FABRICATING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120264253A1
公开(公告)日：2012-10-18
申请号：US13190498
申请日：2011-07-26
申请人： Ming-Hui Chiu , Shih-Hsien Yang , Yen-Cheng Hu , Yu-Chun Chen , Tsung-Pao Chen , Kuan-Chen Wang , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Ming-Hui Chiu , Shih-Hsien Yang , Yen-Cheng Hu , Yu-Chun Chen , Tsung-Pao Chen , Kuan-Chen Wang , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/0288 , H01L31/02963 , H01L31/0323 , H01L31/068 , H01L31/1804 , H01L31/1828 , Y02E10/541 , Y02E10/543 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell is provided. A first type substrate having a first surface and a second surface is provided. A first doping process is performed on the first surface of the first type substrate by using a first dopant, so as to form a first type lightly doped layer. A second doping process is performed on a portion of the first type lightly doped layer by using a second dopant, so as to form a second type heavily doped region. A molecular weight of the second dopant is larger than a molecular weight of the first dopant, and a temperature of the first doping process is higher than a temperature of the second doping process. A first electrode is formed on the second type heavily doped region. A second electrode is formed on the second surface of the first type substrate.
摘要翻译：提供一种制造太阳能电池的方法。提供具有第一表面和第二表面的第一类型基底。通过使用第一掺杂剂在第一类型衬底的第一表面上进行第一掺杂工艺，以形成第一类型的轻掺杂层。通过使用第二掺杂剂在第一类型轻掺杂层的一部分上进行第二掺杂工艺，以形成第二类型重掺杂区域。第二掺杂剂的分子量大于第一掺杂剂的分子量，并且第一掺杂工艺的温度高于第二掺杂工艺的温度。在第二种重掺杂区域上形成第一电极。第二电极形成在第一类型基板的第二表面上。

8. 发明授权

US08653664B2 Barrier layers for copper interconnect 有权
标题翻译：铜互连屏障层
公开(公告)号：US08653664B2
公开(公告)日：2014-02-18
申请号：US12832790
申请日：2010-07-08
申请人： Nai-Wei Liu , Zhen-Cheng Wu , Cheng-Lin Huang , Po-Hsiang Huang , Yung-Chih Wang , Shu-Hui Su , Dian-Hau Chen , Yuh-Jier Mii
发明人： Nai-Wei Liu , Zhen-Cheng Wu , Cheng-Lin Huang , Po-Hsiang Huang , Yung-Chih Wang , Shu-Hui Su , Dian-Hau Chen , Yuh-Jier Mii
IPC分类号： H01L23/522 , H01L21/44
CPC分类号： H01L21/76846 , H01L21/76831 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A copper interconnect includes a copper layer formed in a dielectric layer, having a first portion and a second portion. A first barrier layer is formed between the first portion of the copper layer and the dielectric layer. A second barrier layer is formed at the boundary between the second portion of the copper layer and the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer.
摘要翻译：铜互连包括形成在电介质层中的铜层，具有第一部分和第二部分。在铜层的第一部分和电介质层之间形成第一阻挡层。在铜层的第二部分和电介质层之间的边界处形成第二阻挡层。第一阻挡层是电介质层，第二阻挡层是金属氧化物层。

9. 发明申请

US20120167966A1 SOLAR CELL AND METHOD OF FABRICATING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120167966A1
公开(公告)日：2012-07-05
申请号：US13101996
申请日：2011-05-05
申请人： Yen-Cheng Hu , Hsin-Feng Li , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Hsin-Feng Li , Zhen-Cheng Wu
IPC分类号： H01L31/06 , H01L31/20
CPC分类号： H01L31/03685 , H01L31/068 , H01L31/0747 , H01L31/1824 , H01L31/1872 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
摘要翻译：太阳能电池包括半导体基底，第一掺杂半导体层，绝缘层，第二掺杂半导体层和第一电极层。半导体基底具有第一掺杂型。设置在半导体基底上的第一掺杂半导体层具有掺杂的接触区域。绝缘层设置在第一掺杂半导体层上，暴露掺杂的接触区域。第二掺杂半导体层设置在绝缘层和掺杂接触区域上。第一掺杂半导体层，掺杂接触区域和第二掺杂半导体层具有第二掺杂类型，并且第二掺杂半导体层的掺杂剂浓度在第一掺杂半导体层和掺杂接触区域的掺杂浓度之间。第一电极层对应于掺杂的接触区域设置。

10. 发明申请

US20120138127A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120138127A1
公开(公告)日：2012-06-07
申请号：US13038388
申请日：2011-03-02
申请人： Cheng-Chang Kuo , Yen-Cheng Hu , Hsin-Feng Li , Tsung-Pao Chen , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Cheng-Chang Kuo , Yen-Cheng Hu , Hsin-Feng Li , Tsung-Pao Chen , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/06 , H01L31/0232
CPC分类号： H01L31/1864 , H01L31/022441 , H01L31/02363 , H01L31/0682 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell and a manufacturing method thereof are provided. A laser doping process is adopted to form positive and negative doping regions for an accurate control of the doping regions. No metal contact coverage issue arises since a contact opening is formed by later firing process. The solar cell is provided with a comb-like first electrode, a sheet-like second electrode corresponding to the doping regions to obtain high photoelectric conversion efficiency by fully utilizing the space in the semiconductor substrate. Furthermore, the sheet-like second electrode can be formed by a material having high reflectivity to improve the light utilization rate of the solar cell. The manufacturing process of the solar cell is simplified and the processing yield is improved.
摘要翻译：提供太阳能电池及其制造方法。采用激光掺杂工艺形成正掺杂区和负掺杂区，用于精确控制掺杂区。由于通过稍后的烧制工艺形成接触开口，所以不会出现金属接触覆盖问题。太阳能电池设置有梳状的第一电极，对应于掺杂区域的片状的第二电极，通过充分利用半导体衬底中的空间来获得高的光电转换效率。此外，片状第二电极可以由具有高反射率的材料形成，以提高太阳能电池的光利用率。太阳能电池的制造过程简化，加工成品率提高。

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