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1. 发明申请

US20120167966A1 SOLAR CELL AND METHOD OF FABRICATING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120167966A1
公开(公告)日：2012-07-05
申请号：US13101996
申请日：2011-05-05
申请人： Yen-Cheng Hu , Hsin-Feng Li , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Hsin-Feng Li , Zhen-Cheng Wu
IPC分类号： H01L31/06 , H01L31/20
CPC分类号： H01L31/03685 , H01L31/068 , H01L31/0747 , H01L31/1824 , H01L31/1872 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
摘要翻译：太阳能电池包括半导体基底，第一掺杂半导体层，绝缘层，第二掺杂半导体层和第一电极层。半导体基底具有第一掺杂型。设置在半导体基底上的第一掺杂半导体层具有掺杂的接触区域。绝缘层设置在第一掺杂半导体层上，暴露掺杂的接触区域。第二掺杂半导体层设置在绝缘层和掺杂接触区域上。第一掺杂半导体层，掺杂接触区域和第二掺杂半导体层具有第二掺杂类型，并且第二掺杂半导体层的掺杂剂浓度在第一掺杂半导体层和掺杂接触区域的掺杂浓度之间。第一电极层对应于掺杂的接触区域设置。

2. 发明申请

US20120138127A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120138127A1
公开(公告)日：2012-06-07
申请号：US13038388
申请日：2011-03-02
申请人： Cheng-Chang Kuo , Yen-Cheng Hu , Hsin-Feng Li , Tsung-Pao Chen , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Cheng-Chang Kuo , Yen-Cheng Hu , Hsin-Feng Li , Tsung-Pao Chen , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/06 , H01L31/0232
CPC分类号： H01L31/1864 , H01L31/022441 , H01L31/02363 , H01L31/0682 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell and a manufacturing method thereof are provided. A laser doping process is adopted to form positive and negative doping regions for an accurate control of the doping regions. No metal contact coverage issue arises since a contact opening is formed by later firing process. The solar cell is provided with a comb-like first electrode, a sheet-like second electrode corresponding to the doping regions to obtain high photoelectric conversion efficiency by fully utilizing the space in the semiconductor substrate. Furthermore, the sheet-like second electrode can be formed by a material having high reflectivity to improve the light utilization rate of the solar cell. The manufacturing process of the solar cell is simplified and the processing yield is improved.
摘要翻译：提供太阳能电池及其制造方法。采用激光掺杂工艺形成正掺杂区和负掺杂区，用于精确控制掺杂区。由于通过稍后的烧制工艺形成接触开口，所以不会出现金属接触覆盖问题。太阳能电池设置有梳状的第一电极，对应于掺杂区域的片状的第二电极，通过充分利用半导体衬底中的空间来获得高的光电转换效率。此外，片状第二电极可以由具有高反射率的材料形成，以提高太阳能电池的光利用率。太阳能电池的制造过程简化，加工成品率提高。

3. 发明授权

US08835753B2 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08835753B2
公开(公告)日：2014-09-16
申请号：US13101996
申请日：2011-05-05
申请人： Yen-Cheng Hu , Hsin-Feng Li , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Hsin-Feng Li , Zhen-Cheng Wu
IPC分类号： H01L31/036 , H01L31/0392 , H01L31/18 , H01L31/0747 , H01L31/0368 , H01L31/068
CPC分类号： H01L31/03685 , H01L31/068 , H01L31/0747 , H01L31/1824 , H01L31/1872 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
摘要翻译：太阳能电池包括半导体基底，第一掺杂半导体层，绝缘层，第二掺杂半导体层和第一电极层。半导体基底具有第一掺杂型。设置在半导体基底上的第一掺杂半导体层具有掺杂的接触区域。绝缘层设置在第一掺杂半导体层上，暴露掺杂的接触区域。第二掺杂半导体层设置在绝缘层和掺杂接触区域上。第一掺杂半导体层，掺杂接触区域和第二掺杂半导体层具有第二掺杂类型，并且第二掺杂半导体层的掺杂剂浓度在第一掺杂半导体层和掺杂接触区域的掺杂浓度之间。第一电极层对应于掺杂的接触区域设置。

4. 发明申请

US20120171805A1 METHOD OF FABRICATING A SOLAR CELL 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120171805A1
公开(公告)日：2012-07-05
申请号：US13049886
申请日：2011-03-16
申请人： Yen-Cheng Hu , Cheng-Chang Kuo , Jun-Wei Chen , Hsin-Feng Li , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Cheng-Chang Kuo , Jun-Wei Chen , Hsin-Feng Li , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/18
CPC分类号： H01L31/068 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.
摘要翻译：提供一种制造太阳能电池的方法。提供具有第一表面和第二表面的第一类型的半导体衬底。在第一类型半导体衬底的部分中形成第二类型的掺杂扩散区。第二类掺杂扩散区从第一表面在第一类型半导体衬底内延伸。在第一表面上形成与第二类掺杂扩散区接触的抗反射涂层（ARC）。在ARC上形成包括导电颗粒和掺杂剂的导电浆料。执行用于使导电浆料穿透ARC以形成嵌入ARC中的第一接触导体的共烧制方法。在共烧制过程中，掺杂剂扩散到第二类掺杂扩散区，形成第二类重掺杂扩散区。第二接触导体形成在第二表面上。

5. 发明授权

US08338217B2 Method of fabricating a solar cell 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US08338217B2
公开(公告)日：2012-12-25
申请号：US13049886
申请日：2011-03-16
申请人： Yen-Cheng Hu , Cheng-Chang Kuo , Jun-Wei Chen , Hsin-Feng Li , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Cheng-Chang Kuo , Jun-Wei Chen , Hsin-Feng Li , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/18
CPC分类号： H01L31/068 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.
摘要翻译：提供一种制造太阳能电池的方法。提供具有第一表面和第二表面的第一类型的半导体衬底。在第一类型半导体衬底的部分中形成第二类型的掺杂扩散区。第二类掺杂扩散区从第一表面在第一类型半导体衬底内延伸。在第一表面上形成与第二类掺杂扩散区接触的抗反射涂层（ARC）。在ARC上形成包括导电颗粒和掺杂剂的导电浆料。执行用于使导电浆料穿透ARC以形成嵌入ARC中的第一接触导体的共烧制方法。在共烧制过程中，掺杂剂扩散到第二类掺杂扩散区，形成第二类重掺杂扩散区。第二接触导体形成在第二表面上。

6. 发明授权

US08952244B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08952244B2
公开(公告)日：2015-02-10
申请号：US13089321
申请日：2011-04-19
申请人： Yen-Cheng Hu , Peng Chen , Shuo-Wei Liang , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Peng Chen , Shuo-Wei Liang , Zhen-Cheng Wu
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/0224 , H01L31/0352 , H01L31/068
CPC分类号： H01L31/02168 , H01L31/022441 , H01L31/035209 , H01L31/035227 , H01L31/0682 , Y02E10/547
摘要： A solar cell includes a semiconductor substrate, a doping layer, a quantum well layer, a first passivation layer, a second passivation layer, a first electrode and a second electrode. The semiconductor substrate has a front surface and a back surface, and the front surface of the semiconductor substrate includes nano-rods. The doping layer covers the surface of the nano-rods. The electrode layers cover the doping layer. The quantum well layer having at least one first doping region and at least one second doping region is disposed on the semiconductor substrate. The quantum well layer includes polycrystalline silicon germanium (Si1-xGex). The first passivation layer and the second passivation layer cover the first and the second doping regions of the quantum well layer, respectively. The first electrode and the second electrode are electrically connected to the first doping region and the second doping region of the quantum well layer, respectively.
摘要翻译：太阳能电池包括半导体衬底，掺杂层，量子阱层，第一钝化层，第二钝化层，第一电极和第二电极。半导体衬底具有前表面和后表面，并且半导体衬底的前表面包括纳米棒。掺杂层覆盖纳米棒的表面。电极层覆盖掺杂层。具有至少一个第一掺杂区域和至少一个第二掺杂区域的量子阱层设置在半导体衬底上。量子阱层包括多晶硅锗（Si1-xGex）。第一钝化层和第二钝化层分别覆盖量子阱层的第一和第二掺杂区域。第一电极和第二电极分别电连接到量子阱层的第一掺杂区域和第二掺杂区域。

7. 发明授权

US08334163B1 Method of forming solar cell 有权
标题翻译：形成太阳能电池的方法
公开(公告)号：US08334163B1
公开(公告)日：2012-12-18
申请号：US13439879
申请日：2012-04-05
申请人： Yen-Cheng Hu , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L21/00
CPC分类号： H01L21/2225 , H01L21/2254 , H01L31/022425 , H01L31/02363 , H01L31/0288 , H01L31/068 , Y02E10/547
摘要： A method of forming solar cell includes forming a doping paste on a first surface of a semiconductor substrate to form a selective emitter, to render the selective emitter a non-textured surface, and forming a texturing barrier layer on a second surface of the semiconductor substrate to render the second surface a non-textured surface.
摘要翻译：一种形成太阳能电池的方法包括在半导体衬底的第一表面上形成掺杂膏以形成选择性发射极，使选择性发射极成为非纹理表面，并在半导体衬底的第二表面上形成纹理阻挡层以使第二表面成为非纹理表面。

8. 发明申请

US20120264253A1 METHOD OF FABRICATING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120264253A1
公开(公告)日：2012-10-18
申请号：US13190498
申请日：2011-07-26
申请人： Ming-Hui Chiu , Shih-Hsien Yang , Yen-Cheng Hu , Yu-Chun Chen , Tsung-Pao Chen , Kuan-Chen Wang , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Ming-Hui Chiu , Shih-Hsien Yang , Yen-Cheng Hu , Yu-Chun Chen , Tsung-Pao Chen , Kuan-Chen Wang , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/0288 , H01L31/02963 , H01L31/0323 , H01L31/068 , H01L31/1804 , H01L31/1828 , Y02E10/541 , Y02E10/543 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell is provided. A first type substrate having a first surface and a second surface is provided. A first doping process is performed on the first surface of the first type substrate by using a first dopant, so as to form a first type lightly doped layer. A second doping process is performed on a portion of the first type lightly doped layer by using a second dopant, so as to form a second type heavily doped region. A molecular weight of the second dopant is larger than a molecular weight of the first dopant, and a temperature of the first doping process is higher than a temperature of the second doping process. A first electrode is formed on the second type heavily doped region. A second electrode is formed on the second surface of the first type substrate.
摘要翻译：提供一种制造太阳能电池的方法。提供具有第一表面和第二表面的第一类型基底。通过使用第一掺杂剂在第一类型衬底的第一表面上进行第一掺杂工艺，以形成第一类型的轻掺杂层。通过使用第二掺杂剂在第一类型轻掺杂层的一部分上进行第二掺杂工艺，以形成第二类型重掺杂区域。第二掺杂剂的分子量大于第一掺杂剂的分子量，并且第一掺杂工艺的温度高于第二掺杂工艺的温度。在第二种重掺杂区域上形成第一电极。第二电极形成在第一类型基板的第二表面上。

9. 发明申请

US20120097236A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20120097236A1
公开(公告)日：2012-04-26
申请号：US13100310
申请日：2011-05-04
申请人： Yen-Cheng Hu , Peng Chen , Tsung-Pao Chen , Shuo-Wei Liang , Zhen-Cheng Wu , Chien-Jen Chen
发明人： Yen-Cheng Hu , Peng Chen , Tsung-Pao Chen , Shuo-Wei Liang , Zhen-Cheng Wu , Chien-Jen Chen
IPC分类号： H01L31/0216
CPC分类号： H01L31/0264 , H01L31/02167 , H01L31/02168 , H01L31/18 , Y02E10/50
摘要： A solar cell includes a semi-conductive substrate, a doping layer, an anti-reflection layer, an electrode, a passivation stacked layer and a contact layer. The semi-conductive substrate has a front and a back surface. The doping layer is disposed on the front surface. The anti-reflection layer is disposed on the doping layer. The electrode is disposed on the anti-reflection layer and electrically connected to the doping layer. The passivation stacked layer is disposed on the back surface and has a first dielectric layer, a second dielectric layer and a middle dielectric layer sandwiched between the first and the second dielectric layer. The dielectric constant of the middle dielectric layer is substantially lower than the dielectric constant of the first dielectric layer and the dielectric constant of the second dielectric layer. The contact layer covers the passivation stacked layer and electrically contacts with the back surface of the semi-conductive substrate.
摘要翻译：太阳能电池包括半导体基板，掺杂层，抗反射层，电极，钝化堆叠层和接触层。半导体基板具有前表面和后表面。掺杂层设置在前表面上。抗反射层设置在掺杂层上。电极设置在抗反射层上并与掺杂层电连接。钝化堆叠层设置在背面上，并且具有夹在第一和第二电介质层之间的第一电介质层，第二电介质层和中间电介质层。中间介电层的介电常数基本上低于第一介电层的介电常数和第二介质层的介电常数。接触层覆盖钝化堆叠层并与半导体基板的背面电接触。

10. 发明授权

US08779281B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08779281B2
公开(公告)日：2014-07-15
申请号：US13100310
申请日：2011-05-04
申请人： Yen-Cheng Hu , Peng Chen , Tsung-Pao Chen , Shuo-Wei Liang , Zhen-Cheng Wu , Chien-Jen Chen
发明人： Yen-Cheng Hu , Peng Chen , Tsung-Pao Chen , Shuo-Wei Liang , Zhen-Cheng Wu , Chien-Jen Chen
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/0264 , H01L31/02167 , H01L31/02168 , H01L31/18 , Y02E10/50
摘要： A solar cell includes a semi-conductive substrate, a doping layer, an anti-reflection layer, an electrode, a passivation stacked layer and a contact layer. The semi-conductive substrate has a front and a back surface. The doping layer is disposed on the front surface. The anti-reflection layer is disposed on the doping layer. The electrode is disposed on the anti-reflection layer and electrically connected to the doping layer. The passivation stacked layer is disposed on the back surface and has a first dielectric layer, a second dielectric layer and a middle dielectric layer sandwiched between the first and the second dielectric layer. The dielectric constant of the middle dielectric layer is substantially lower than the dielectric constant of the first dielectric layer and the dielectric constant of the second dielectric layer. The contact layer covers the passivation stacked layer and electrically contacts with the back surface of the semi-conductive substrate.
摘要翻译：太阳能电池包括半导体基板，掺杂层，抗反射层，电极，钝化堆叠层和接触层。半导体基板具有前表面和后表面。掺杂层设置在前表面上。抗反射层设置在掺杂层上。电极设置在抗反射层上并与掺杂层电连接。钝化堆叠层设置在背面上，并且具有夹在第一和第二电介质层之间的第一电介质层，第二电介质层和中间电介质层。中间介电层的介电常数基本上低于第一介电层的介电常数和第二介质层的介电常数。接触层覆盖钝化堆叠层并与半导体基板的背面电接触。

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