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1. 发明授权

US5757164A Apparatus for supplying electric power to electrically heated catalysts attached to the exhaust gas passage of a vehicle 失效
标题翻译：用于向附着在车辆废气通道上的电加热催化剂供电的装置
公开(公告)号：US5757164A
公开(公告)日：1998-05-26
申请号：US662853
申请日：1996-06-12
申请人： Kouji Yoshizaki , Yukio Terashima
发明人： Kouji Yoshizaki , Yukio Terashima
IPC分类号： B01J35/02 , F01N3/20 , F01N13/02 , F01N13/04 , H01M10/46 , H02J7/14 , H02J7/16 , H02P9/10
CPC分类号： H02J7/1438 , F01N13/0097 , F01N13/011 , F01N3/2026 , H01M10/46 , Y02T10/26 , Y02T10/7005
摘要： An apparatus for supplying electric power to heating devices of a vehicle, making it possible to utilize the maximum amount of electric power generated by an alternator when a plurality of electrically heated catalysts mounted on the vehicle are to be supplied with electric power from the alternator only. The apparatus for supplying electric power to the heating devices of the vehicle comprises the alternator driven by a drive source of the vehicle to generate electricity, a battery charging circuit contained in the alternator, and a battery capable of being charged or discharged, wherein between the stator coil of the alternator and the battery charging circuit are provided a change-over switch for connecting a rectifier that rectifies the electric power generated in the stator coil to either the electrically heated catalysts or the battery charging circuit, and another change-over switch for connecting the rotor coil to either the battery charging circuit or ground, so that, when the battery is not being charged, the output of the stator coil is supplied to the output terminals of the alternator and that the rotor coil is connected to the battery. The two electrically heated catalysts are connected in series with the output terminals, the outer cylinders of the two electrically heated catalysts being grounded. When the electrically heated catalysts are to be heated, the electric power is supplied directly from the alternator and the ability of the alternator is utilized to the maximum degree.
摘要翻译：一种用于向车辆的加热装置提供电力的装置，使得当安装在车辆上的多个电加热催化剂只能从交流发电机提供电力时，可以利用由交流发电机产生的最大量的电力。用于向车辆的加热装置供电的装置包括由车辆的驱动源驱动的交流发电机，容纳在交流发电机中的电池充电电路和能够充电或放电的电池，交流发电机的定子线圈和电池充电电路设置有用于连接整流器的转换开关，该整流器将定子线圈中产生的电力整流到电加热的催化剂或电池充电电路，以及另一个转换开关，将转子线圈连接到电池充电电路或接地，使得当电池未被充电时，定子线圈的输出被提供给交流发电机的输出端子，并且转子线圈连接到电池。两个电加热催化剂与输出端串联连接，两个电加热催化剂的外圆筒接地。当电加热的催化剂被加热时，直接从交流发电机供电，最大程度地利用交流发电机的能力。

2. 发明授权

US08118933B2 Method of manufacturing a silicon carbide single crystal 有权
标题翻译：制造碳化硅单晶的方法
公开(公告)号：US08118933B2
公开(公告)日：2012-02-21
申请号：US12296145
申请日：2007-04-05
申请人： Hidemitsu Sakamoto , Yukio Terashima
发明人： Hidemitsu Sakamoto , Yukio Terashima
IPC分类号： C03B15/02
CPC分类号： C30B29/36 , C30B17/00 , C30B19/04
摘要： Silicon raw material is filled into a graphite crucible (10), the graphite crucible (10) is heated to form molten silicon (M), at least one rare earth element and at least one of Sn, Al, and Ge are added to molten silicon (M), and a temperature gradient is maintained in the molten silicon in which the temperature decreases from within the molten silicon toward the surface while growing an silicon carbide single crystal starting from an silicon carbide seed crystal (14) held immediately below the surface of the molten liquid.
摘要翻译：将硅原料填充到石墨坩埚（10）中，将石墨坩埚（10）加热形成熔融硅（M），将至少一种稀土元素和Sn，Al和Ge中的至少一种加入熔融硅（M），并且在熔融硅中保持温度梯度，其中温度从熔融硅内朝向表面降温，同时从立即在表面下方保持的碳化硅晶种（14）开始生长碳化硅单晶的熔融液体。

3. 发明申请

US20100288188A1 METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20100288188A1
公开(公告)日：2010-11-18
申请号：US12812662
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B9/06 , C30B17/00
CPC分类号： C30B29/36 , C30B15/00 , C30B17/00 , C30B19/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过将C与C的溶液接触，所述溶液通过将C溶解到含有Si，Cr和X的熔体中，所述熔融物由至少一种Sn组成， In和Ga，使得熔体的整个组成中的Cr的比例为30〜70at。％，X的比例为1〜25at。％，并且碳化硅晶体从溶液中生长。

4. 发明授权

US08702864B2 Method for growing silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶的方法
公开(公告)号：US08702864B2
公开(公告)日：2014-04-22
申请号：US12812613
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B9/00
CPC分类号： C30B29/36 , C30B17/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过使衬底与含有C的溶液接触，所述溶液通过将C溶解到含有Cr和X的熔体中，所述熔体包含至少一种Ce和Nd元素使得熔体的整个组成中的Cr的比例在30〜70at 3的范围内。％，并且熔体的整个组成中的X的比例在0.5at。的范围内。％至20 at。在X为Ce的情况下，或在1at的范围内。％至25点。在X为Nd的情况下，从溶液中生长碳化硅单晶。

5. 发明授权

US4406908A Tetrazolylcoumarin derivatives and antiallergic compositions containing the same 失效
标题翻译：四唑基香豆素衍生物和含有它们的抗过敏组合物
公开(公告)号：US4406908A
公开(公告)日：1983-09-27
申请号：US260900
申请日：1981-05-06
申请人： Tetsuo Matsuda , Jun Nakano , Yukio Terashima , Yuji Suzuki , Kiyonoshin Itikawa
发明人： Tetsuo Matsuda , Jun Nakano , Yukio Terashima , Yuji Suzuki , Kiyonoshin Itikawa
IPC分类号： C07D405/04 , A61K31/41 , A61P37/08 , C07D311/12 , C07D311/14 , C07D311/16 , C07D257/04
CPC分类号： C07D311/14 , C07D311/12 , C07D311/16 , Y10S514/826 , Y10S514/914
摘要： Tetrazolylcoumarin derivatives of the general formula: ##STR1## wherein R is hydrogen atom, an alkyl group, an alkenyl group, an alkoxyalkyl group or phenyl group, n is an integer of 2 to 4, and the R--O--(CH.sub.2).sub.n --O-- group is substituted at any of the 5, 6, 7 and 8 positions of the coumarin ring, and the salts thereof. The compounds are useful as antiallergic agents for preventing and treating allergic diseases.
摘要翻译：其中R为氢原子，烷基，烯基，烷氧基烷基或苯基，n为2〜4的整数，RO-（CH2）nO-基团在香豆素环的5,6,7和8位中的任何一个被取代，及其盐。该化合物可用作预防和治疗过敏性疾病的抗过敏剂。

6. 发明授权

US08685163B2 Method for growing silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶的方法
公开(公告)号：US08685163B2
公开(公告)日：2014-04-01
申请号：US12599520
申请日：2008-11-18
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B19/02
CPC分类号： C30B9/10 , C30B19/02 , C30B29/36
摘要： A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from the melt, wherein the melt comprises 30 to 70 percent by atom, based on the total atoms of the melt, of chromium and 1 to 25 percent by atom, based on the total atoms of the melt, of X, where X is at least one selected from the group consisting of nickel and cobalt, and carbon. It is possible to improve morphology of a surface of the crystal growth layer obtained by a solution method.
摘要翻译：一种用于在单晶衬底上生长碳化硅单晶的方法，包括以下步骤：在石墨坩埚中加热硅以形成熔体，使碳化硅单晶衬底与熔体接触，并沉积和生长碳化硅单晶体，其中熔体包含30至70％原子，基于熔体的总原子，铬和1至25％原子，基于熔体的总原子X，其中X为选自镍和钴中的至少一种和碳。可以改善通过溶液法获得的晶体生长层的表面的形态。

7. 发明授权

US08123857B2 Method for producing p-type SiC semiconductor single crystal 有权
标题翻译：生产p型SiC半导体单晶的方法
公开(公告)号：US08123857B2
公开(公告)日：2012-02-28
申请号：US12366076
申请日：2009-02-05
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C30B17/00 , C30B19/02
摘要： A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p-type SiC semiconductor single crystal on a SiC single crystal substrate from the solution.
摘要翻译：一种p型SiC半导体单晶的制造方法，其特征在于，使用将C溶解在Si熔体中的溶液和30〜70at。％Cr和0.1〜20at。％Al，基于Si熔体的总重量，Cr和Al添加到Si熔体中，以从溶液中在SiC单晶衬底上生长p型SiC半导体单晶。

8. 发明申请

US20100236472A1 METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20100236472A1
公开(公告)日：2010-09-23
申请号：US12599520
申请日：2008-11-18
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B11/02
CPC分类号： C30B9/10 , C30B19/02 , C30B29/36
摘要： A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from the melt, wherein the melt comprises 30 to 70 percent by atom, based on the total atoms of the melt, of chromium and 1 to 25 percent by atom, based on the total atoms of the melt, of X, where X is at least one selected from the group consisting of nickel and cobalt, and carbon. It is possible to improve morphology of a surface of the crystal growth layer obtained by a solution method.
摘要翻译：一种用于在单晶衬底上生长碳化硅单晶的方法，包括以下步骤：在石墨坩埚中加热硅以形成熔体，使碳化硅单晶衬底与熔体接触，并沉积和生长碳化硅单晶体，其中熔体包含30至70％原子，基于熔体的总原子，铬和1至25％原子，基于熔体的总原子X，其中X为选自镍和钴中的至少一种和碳。可以改善通过溶液法获得的晶体生长层的表面的形态。

9. 发明授权

US08287644B2 Method for growing silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶的方法
公开(公告)号：US08287644B2
公开(公告)日：2012-10-16
申请号：US12812662
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B17/00 , C30B15/02
CPC分类号： C30B29/36 , C30B15/00 , C30B17/00 , C30B19/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过将C与C的溶液接触，所述溶液通过将C溶解到含有Si，Cr和X的熔体中，所述熔融物由至少一种Sn组成， In和Ga，使得熔体的整个组成中的Cr的比例为30〜70at。％，X的比例为1〜25at。％，并且碳化硅晶体从溶液中生长。

10. 发明申请

US20100288187A1 METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20100288187A1
公开(公告)日：2010-11-18
申请号：US12812613
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B11/02
CPC分类号： C30B29/36 , C30B17/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过使衬底与含有C的溶液接触，所述溶液通过将C溶解在含有Cr和X的熔体中而形成，所述Cr和X由至少一种Ce和Nd元素组成使得熔体的整个组成中的Cr的比例在30〜70at 3的范围内。％，并且熔体的整个组成中的X的比例在0.5at。的范围内。％至20 at。在X为Ce的情况下，或在1at的范围内。％至25点。在X为Nd的情况下，从溶液中生长碳化硅单晶。

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