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1. 发明申请

US20090194017A1 METHOD FOR PRODUCING p-TYPE SiC SEMICONDUCTOR SINGLE CRYSTAL 有权
标题翻译：生产p型SiC半导体单晶的方法
公开(公告)号：US20090194017A1
公开(公告)日：2009-08-06
申请号：US12366076
申请日：2009-02-05
申请人： Yukio TERASHIMA , Yasuyuki Fujiwara
发明人： Yukio TERASHIMA , Yasuyuki Fujiwara
IPC分类号： C30B19/04
CPC分类号： C30B29/36 , C30B17/00 , C30B19/02
摘要： A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p-type SiC semiconductor single crystal on a SiC single crystal substrate from the solution.
摘要翻译：一种p型SiC半导体单晶的制造方法，其特征在于，使用将C溶解在Si熔体中的溶液和30〜70at。％Cr和0.1〜20at。％Al，基于Si熔体的总重量，Cr和Al添加到Si熔体中，以从溶液中在SiC单晶衬底上生长p型SiC半导体单晶。

2. 发明授权

US08702864B2 Method for growing silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶的方法
公开(公告)号：US08702864B2
公开(公告)日：2014-04-22
申请号：US12812613
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B9/00
CPC分类号： C30B29/36 , C30B17/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过使衬底与含有C的溶液接触，所述溶液通过将C溶解到含有Cr和X的熔体中，所述熔体包含至少一种Ce和Nd元素使得熔体的整个组成中的Cr的比例在30〜70at 3的范围内。％，并且熔体的整个组成中的X的比例在0.5at。的范围内。％至20 at。在X为Ce的情况下，或在1at的范围内。％至25点。在X为Nd的情况下，从溶液中生长碳化硅单晶。

3. 发明授权

US08685163B2 Method for growing silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶的方法
公开(公告)号：US08685163B2
公开(公告)日：2014-04-01
申请号：US12599520
申请日：2008-11-18
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B19/02
CPC分类号： C30B9/10 , C30B19/02 , C30B29/36
摘要： A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from the melt, wherein the melt comprises 30 to 70 percent by atom, based on the total atoms of the melt, of chromium and 1 to 25 percent by atom, based on the total atoms of the melt, of X, where X is at least one selected from the group consisting of nickel and cobalt, and carbon. It is possible to improve morphology of a surface of the crystal growth layer obtained by a solution method.
摘要翻译：一种用于在单晶衬底上生长碳化硅单晶的方法，包括以下步骤：在石墨坩埚中加热硅以形成熔体，使碳化硅单晶衬底与熔体接触，并沉积和生长碳化硅单晶体，其中熔体包含30至70％原子，基于熔体的总原子，铬和1至25％原子，基于熔体的总原子X，其中X为选自镍和钴中的至少一种和碳。可以改善通过溶液法获得的晶体生长层的表面的形态。

4. 发明授权

US08123857B2 Method for producing p-type SiC semiconductor single crystal 有权
标题翻译：生产p型SiC半导体单晶的方法
公开(公告)号：US08123857B2
公开(公告)日：2012-02-28
申请号：US12366076
申请日：2009-02-05
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C30B17/00 , C30B19/02
摘要： A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p-type SiC semiconductor single crystal on a SiC single crystal substrate from the solution.
摘要翻译：一种p型SiC半导体单晶的制造方法，其特征在于，使用将C溶解在Si熔体中的溶液和30〜70at。％Cr和0.1〜20at。％Al，基于Si熔体的总重量，Cr和Al添加到Si熔体中，以从溶液中在SiC单晶衬底上生长p型SiC半导体单晶。

5. 发明申请

US20100236472A1 METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20100236472A1
公开(公告)日：2010-09-23
申请号：US12599520
申请日：2008-11-18
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B11/02
CPC分类号： C30B9/10 , C30B19/02 , C30B29/36
摘要： A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from the melt, wherein the melt comprises 30 to 70 percent by atom, based on the total atoms of the melt, of chromium and 1 to 25 percent by atom, based on the total atoms of the melt, of X, where X is at least one selected from the group consisting of nickel and cobalt, and carbon. It is possible to improve morphology of a surface of the crystal growth layer obtained by a solution method.
摘要翻译：一种用于在单晶衬底上生长碳化硅单晶的方法，包括以下步骤：在石墨坩埚中加热硅以形成熔体，使碳化硅单晶衬底与熔体接触，并沉积和生长碳化硅单晶体，其中熔体包含30至70％原子，基于熔体的总原子，铬和1至25％原子，基于熔体的总原子X，其中X为选自镍和钴中的至少一种和碳。可以改善通过溶液法获得的晶体生长层的表面的形态。

6. 发明授权

US08287644B2 Method for growing silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶的方法
公开(公告)号：US08287644B2
公开(公告)日：2012-10-16
申请号：US12812662
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B17/00 , C30B15/02
CPC分类号： C30B29/36 , C30B15/00 , C30B17/00 , C30B19/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过将C与C的溶液接触，所述溶液通过将C溶解到含有Si，Cr和X的熔体中，所述熔融物由至少一种Sn组成， In和Ga，使得熔体的整个组成中的Cr的比例为30〜70at。％，X的比例为1〜25at。％，并且碳化硅晶体从溶液中生长。

7. 发明申请

US20100288187A1 METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20100288187A1
公开(公告)日：2010-11-18
申请号：US12812613
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B11/02
CPC分类号： C30B29/36 , C30B17/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过使衬底与含有C的溶液接触，所述溶液通过将C溶解在含有Cr和X的熔体中而形成，所述Cr和X由至少一种Ce和Nd元素组成使得熔体的整个组成中的Cr的比例在30〜70at 3的范围内。％，并且熔体的整个组成中的X的比例在0.5at。的范围内。％至20 at。在X为Ce的情况下，或在1at的范围内。％至25点。在X为Nd的情况下，从溶液中生长碳化硅单晶。

8. 发明申请

US20100288188A1 METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20100288188A1
公开(公告)日：2010-11-18
申请号：US12812662
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B9/06 , C30B17/00
CPC分类号： C30B29/36 , C30B15/00 , C30B17/00 , C30B19/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过将C与C的溶液接触，所述溶液通过将C溶解到含有Si，Cr和X的熔体中，所述熔融物由至少一种Sn组成， In和Ga，使得熔体的整个组成中的Cr的比例为30〜70at。％，X的比例为1〜25at。％，并且碳化硅晶体从溶液中生长。

9. 发明授权

US08328937B2 Seed crystal axis for solution growth of single crystal 有权
标题翻译：晶晶轴用于单晶溶液生长
公开(公告)号：US08328937B2
公开(公告)日：2012-12-11
申请号：US12673011
申请日：2009-07-21
申请人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
IPC分类号： C30B11/14
CPC分类号： C30B9/00 , C30B17/00 , C30B29/36 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068 , Y10T428/2918
摘要： A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed crystal axis includes a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent. The laminated carbon sheet includes a plurality of carbon thin films laminated with an adhesive or a plurality of pieces with differing lamination directions arranged in a lattice. Alternatively, a wound carbon sheet including a carbon strip wound concentrically from the center or a wound carbon sheet including a plurality of carbon strips with differing thicknesses which are wound and laminated from the center may be provided.
摘要翻译：提供用于单晶生产系统的溶液生长的晶种轴以防止多晶体的形成并以高生长速率生长单晶。种子晶轴包括结合到晶种支撑构件的晶种，其中在与溶剂的溶液表面垂直的方向上插入具有高热导率的层压碳片。层叠碳片包括层叠有粘合剂的多个碳薄膜或者具有以格子排列的不同层叠方向的多个片。或者，可以提供包括从中心同心卷绕的碳带的卷绕碳片或包括从中心卷绕并层压的多个厚度不同的碳带的卷绕碳片。

10. 发明申请

US20070287202A1 Method for Producing Nano-Scale Low-Dimensional Quantum Structure, and Method for Producing Integrated Circuit Using the Method for Producing the Structure 审中-公开
标题翻译：使用生产结构的方法生产纳米尺度的低维量子结构的方法和生产集成电路的方法
公开(公告)号：US20070287202A1
公开(公告)日：2007-12-13
申请号：US11660931
申请日：2005-08-30
申请人： Kenzo Maehashi , Yasuyuki Fujiwara , Koichi Inoue , Kazuhiko Matsumoto , Yasuhide Ohno
发明人： Kenzo Maehashi , Yasuyuki Fujiwara , Koichi Inoue , Kazuhiko Matsumoto , Yasuhide Ohno
IPC分类号： H01L21/71 , C25B5/00
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/162 , H01L51/0048
摘要： A method of an embodiment of the present of the present application is for producing a nano-scale low dimensional quantum structure. The method includes: bringing a catalyst on a substrate into contact with vaporized carbon source, and emitting an electromagnetic wave to the catalyst so as to form single-walled carbon nano-tubes on the catalyst. As a result, it is possible to form the nano-scale low-dimensional quantum structure on a target area.
摘要翻译：本申请的本发明的实施方案的方法是用于生产纳米尺度的低维量子结构。该方法包括：使催化剂在基板上与汽化碳源接触，并向催化剂发射电磁波，从而在催化剂上形成单壁碳纳米管。结果，可以在目标区域上形成纳米级的低维量子结构。

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