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    • 6. 发明申请
    • MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD
    • 磁阻效应元件和薄膜磁头
    • US20080218907A1
    • 2008-09-11
    • US11682421
    • 2007-03-06
    • Tomohito MIZUNOKei HIRATAYoshihiro TSUCHIYAKoji SHIMAZAWA
    • Tomohito MIZUNOKei HIRATAYoshihiro TSUCHIYAKoji SHIMAZAWA
    • G11B5/39
    • G11B5/59683
    • A magneto-resistance effect element (MR element) used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first non-magnetic metal layer, a semiconductor layer, and a second non-magnetic metal layer. The first non-magnetic metal layer and the second non-magnetic metal layer comprise CuPt films having a thickness ranging from a minimum of 0.2 nm to a maximum of 2.0 nm, and the Pt content ranges from a minimum of 5 at % to a maximum of 25 at %. The semiconductor layer comprises a ZnO film, ZnS film, or GaN film having a thickness ranging from a minimum of 1.0 nm to a maximum of 2.5 nm.
    • 用于薄膜磁头的磁阻效应元件(MR元件)由层叠的缓冲层,反铁磁层,钉扎层,间隔层,自由层和覆盖层构成 并且感测电流经由下屏蔽层和上屏蔽层沿着与层表面正交的方向流过元件。 被钉扎层包括其中磁化方向固定的外层,非磁性中间层和作为铁磁层的内层。 间隔层包括第一非磁性金属层,半导体层和第二非磁性金属层。 第一非磁性金属层和第二非磁性金属层包括厚度范围最小为0.2nm至最大2.0nm的CuPt膜,并且Pt含量范围为最小值5at%至最大值 为25原子%。 半导体层包括厚度范围为1.0nm至最大2.5nm的ZnO膜,ZnS膜或GaN膜。
    • 9. 发明申请
    • CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS
    • 具有特征自由层的CPP型磁阻效应元件
    • US20090061258A1
    • 2009-03-05
    • US11847521
    • 2007-08-30
    • Tomohito MIZUNOYoshihiro TSUCHIYAShinji HARAKoji SHIMAZAWATsutomu CHOU
    • Tomohito MIZUNOYoshihiro TSUCHIYAShinji HARAKoji SHIMAZAWATsutomu CHOU
    • G11B5/39
    • B82Y25/00G01R33/093G11B5/3932Y10T428/1129
    • A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface.
    • 磁场检测元件包括:堆叠,其包括其磁化方向根据外部磁场而变化的第一,第二和第三磁性层,夹在第一磁性层和第二磁性层之间的第一非磁性中间层 在第一磁性层和第二磁性层之间产生磁阻效应的第一非磁性中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层,第二非磁性中间层 中间层,允许第二磁性层和第三磁性层交换耦合,使得其磁化方向在没有磁场的情况下彼此反平行,所述堆叠适于使得感测电流沿垂直于 其膜表面; 以及偏置磁性层,其设置在所述堆叠的一侧,所述侧面与所述堆叠的空气支承表面相对,所述偏置磁性层沿垂直于所述空气轴承的方向向所述堆叠施加偏置磁场 表面。
    • 10. 发明申请
    • MAGNETO-RESISTIVE EFFECT DEVICE AND MAGNETIC DISK SYSTEM
    • 磁电阻效应器和磁盘系统
    • US20080170336A1
    • 2008-07-17
    • US11968911
    • 2008-01-03
    • Yoshihiro TSUCHIYATomohito MizunoKei HirataKoji ShimazawaShinji Hara
    • Yoshihiro TSUCHIYATomohito MizunoKei HirataKoji ShimazawaShinji Hara
    • G11B5/33
    • G01R33/093B82Y10/00B82Y25/00G11B5/3906G11B5/3993G11B2005/3996H01F10/3259H01F10/3272H01L43/10
    • The invention provides a giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of said spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc. It is thus possible to keep the area resistivity of the device low as desired, and make the semiconductor oxide layer forming a part of the spacer layer thick while holding back any noise increase. This makes sure the excellent advantages that any variation of the area resistivity of the device is inhibited while the S/N is prevented from getting worse, and the reliability of film characteristics is much more improved.
    • 本发明提供了一种具有CPP(垂直于平面的电流)结构的巨磁阻效应器件(CPP-GMR器件),该结构包括间隔层,并且第一铁磁层和第二铁磁层彼此层叠,间隔层插入 在它们之间具有沿层叠方向施加的感测电流,其中间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层,以及介于第一非磁性金属层之间的半导体氧化物层 和第二非磁性金属层,形成所述间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分,其中主要成分氧化锌含有添加金属,并且添加金属不太可能被氧化成锌。 因此,可以根据需要保持器件的面积电阻率低,并且使得形成间隔层的一部分的半导体氧化物层变厚,同时阻止任何噪声增加。 这确保了防止S / N变差的装置的面电阻率的任何变化被抑制的优点,并且膜特性的可靠性得到更大的改善。