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1. 发明授权

US08310791B2 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US08310791B2
公开(公告)日：2012-11-13
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

2. 发明授权

US08009392B2 Thin film magnetic head and magnetic disk device 有权
标题翻译：薄膜磁头和磁盘装置
公开(公告)号：US08009392B2
公开(公告)日：2011-08-30
申请号：US12318924
申请日：2009-01-13
申请人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
发明人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33 , G11B5/48 , G11B5/60
CPC分类号： G11B5/3932 , G01R33/098
摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
摘要翻译：薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内为0.8〜1.3。通过该结构，噪声的发生率降低。

3. 发明申请

US20100232074A1 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20100232074A1
公开(公告)日：2010-09-16
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

4. 发明申请

US20100177440A1 Thin film magnetic head and magnetic disk device 有权
标题翻译：薄膜磁头和磁盘装置
公开(公告)号：US20100177440A1
公开(公告)日：2010-07-15
申请号：US12318924
申请日：2009-01-13
申请人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
发明人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/127 , G11B5/48 , G11B5/60
CPC分类号： G11B5/3932 , G01R33/098
摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
摘要翻译：薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内为0.8〜1.3。通过该结构，噪声的发生率降低。

5. 发明申请

US20090190270A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090190270A1
公开(公告)日：2009-07-30
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

6. 发明申请

US20090109580A1 MAGNETIC FIELD DETECTING ELEMENT INCLUDING TRI-LAYER STACK WITH STEPPED PORTION 有权
标题翻译：磁场检测元件，包括带有步进部分的三层堆叠
公开(公告)号：US20090109580A1
公开(公告)日：2009-04-30
申请号：US11925030
申请日：2007-10-26
申请人： Toshiyuki AYUKAWA , Daisuke MIYAUCHI , Koji SHIMAZAWA , Takahiko MACHITA
发明人： Toshiyuki AYUKAWA , Daisuke MIYAUCHI , Koji SHIMAZAWA , Takahiko MACHITA
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetic field detecting element comprises; a stack including an upper magnetic layer and a lower magnetic layer, and a non-magnetic intermediate layer sandwiched between said upper magnetic layer and said lower magnetic layer, wherein magnetization of said upper magnetic layer and said lower magnetic layer changes in accordance with an external magnetic field; an upper shield electrode layer and a lower shield electrode layer which is provided to sandwich said stack therebetween in a direction of the stacking of said stack, wherein said upper shield electrode layer and said lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield said stack; a bias magnetic layer which is provided on a surface of said stack opposite to an air bearing surface, and wherein said bias magnetic layer applies a bias magnetic field to said upper magnetic layer and said lower magnetic layer in a direction perpendicular to the air bearing surface; and insulating layers which are provided on both sides of said stack in a track width direction thereof, wherein a stepped portion is formed so that a length of said upper magnetic layer in the track width direction is different from that of said lower magnetic layer.
摘要翻译：磁场检测元件包括：包括上磁性层和下磁性层的堆叠以及夹在所述上磁性层和所述下磁性层之间的非磁性中间层，其中所述上磁性层和所述下磁性层的磁化根据外部磁性层而变化磁场; 上屏蔽电极层和下屏蔽电极层，其设置成在堆叠的堆叠方向上夹着所述堆叠，其中所述上屏蔽电极层和所述下屏蔽电极层沿堆叠方向提供感测电流，并且磁屏蔽所述堆叠; 偏置磁性层，其设置在与空气轴承表面相对的所述堆叠的表面上，并且其中所述偏磁层在与所述空气轴承表面垂直的方向上向所述上磁性层和所述下磁性层施加偏置磁场 ; 以及设置在所述堆叠的轨道宽度方向两侧的绝缘层，其中形成台阶部分，使得所述上磁性层在轨道宽度方向上的长度与所述下磁性层的长度不同。

7. 发明授权

US08149546B2 Magnetic field detecting element including tri-layer stack with stepped portion 有权
标题翻译：磁场检测元件包括具有阶梯部分的三层叠层
公开(公告)号：US08149546B2
公开(公告)日：2012-04-03
申请号：US11925030
申请日：2007-10-26
申请人： Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa , Takahiko Machita
发明人： Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa , Takahiko Machita
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetic field detecting element comprises a stack including upper and lower magnetic layers, and a non-magnetic intermediate layer sandwiched therebetween, wherein magnetization of the magnetic layers changes in accordance with an external magnetic field; upper and lower shield electrode layers sandwiching the stack in a direction of stacking, wherein the upper and lower shield electrode layers supply sense current in the direction of stacking, and magnetically shield the stack; a bias magnetic layer provided on a surface of the stack opposite to an air bearing surface, and wherein the bias magnetic layer applies a bias magnetic field to the upper and lower magnetic layers in a direction perpendicular to the air bearing surface; and insulating layers provided on both sides of the stack in a track width direction thereof, wherein the stack has a stepped portion formed at the non-magnetic intermediate layer.
摘要翻译：磁场检测元件包括包括上下磁性层的堆叠和夹在其间的非磁性中间层，其中磁性层的磁化根据外部磁场而变化; 上下屏蔽电极层沿层叠方向夹着堆叠，其中上下屏蔽电极层在堆叠方向上提供感测电流，并对堆叠进行磁屏蔽; 偏置磁性层，其设置在与空气轴承表面相对的所述堆叠的表面上，并且其中所述偏置磁性层在垂直于所述空气轴承表面的方向上向所述上部和下部磁性层施加偏置磁场; 以及设置在堆叠的轨道宽度方向两侧的绝缘层，其中堆叠具有形成在非磁性中间层的台阶部分。

8. 发明授权

US08094420B2 Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system 有权
标题翻译： CCP的磁阻器件（电流垂直于平面）型，具有单域控制磁化，以及相关的磁盘系统
公开(公告)号：US08094420B2
公开(公告)日：2012-01-10
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.
摘要翻译：本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。磁阻单元包括夹在铁磁层之间的非磁性中间层。平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

9. 发明申请

US20100163519A1 Method for manufacturing CPP-type magnetoresistance effect element 有权
标题翻译： CPP型磁阻效应元件的制造方法
公开(公告)号：US20100163519A1
公开(公告)日：2010-07-01
申请号：US12318481
申请日：2008-12-30
申请人： Toshiyuki Ayukawa , Shinji Hara , Daisuke Miyauchi , Takahiko Machita , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Shinji Hara , Daisuke Miyauchi , Takahiko Machita , Yoshihiro Tsuchiya
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G11B5/3929
摘要： A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer.
摘要翻译：制造薄膜磁头的方法包括形成MR层叠体的步骤; 用于形成由通过湿蚀刻除去的材料制成的第一牺牲层的步骤，随后在所述第一牺牲层的上表面上形成盖层; 另外，用于对MR层叠体和盖层进行图案化，然后用偏磁层填充MR层状体和盖层的去除区域的一部分，剩余的具有绝缘层的步骤; 通过干蚀刻去除盖层的步骤，随后通过湿法蚀刻去除第一牺牲层; 以及在MR层叠体和偏磁层上形成第二屏蔽层的工序。

10. 发明申请

US20100103563A1 Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 审中-公开
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对铁磁层
公开(公告)号：US20100103563A1
公开(公告)日：2010-04-29
申请号：US12289517
申请日：2008-10-29
申请人： Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Toshiyuki Ayukawa
发明人： Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： A magnetoresistive element includes first and second shield portions and an MR stack. Each of the first and second shield portions includes a shield bias magnetic field applying layer, and a closed-magnetic-path-forming portion that forms a closed magnetic path in conjunction of the shield bias magnetic field applying layer. The closed-magnetic-path-forming portion includes a single magnetic domain portion. The MR stack is sandwiched between the respective single magnetic domain portions of the first and second shield portions. The closed-magnetic-path-forming portion includes a magnetic-path-expanding portion that forms a magnetic path, the magnetic path being a portion of the closed magnetic path and located between the shield bias magnetic field applying layer and the single magnetic domain portion. The magnetic-path-expanding portion has two end portions located at both ends of the magnetic path, and a middle portion located between the two end portions. A cross section of the magnetic path at the middle portion is greater in width than a cross section of the magnetic path at each of the two end portions.
摘要翻译：磁阻元件包括第一和第二屏蔽部分和MR堆叠。第一和第二屏蔽部分中的每一个包括屏蔽偏置磁场施加层和闭合磁路形成部分，其结合屏蔽偏置磁场施加层形成闭合磁路。封闭磁路形成部分包括单个磁畴部分。 MR堆叠被夹在第一和第二屏蔽部分的相应单个磁畴部分之间。闭磁路形成部分包括形成磁路的磁路扩展部分，磁路是封闭磁路的一部分，位于屏蔽偏置磁场施加层和单磁畴部分之间。磁路扩展部分具有位于磁路两端的两个端部和位于两个端部之间的中间部分。在中间部分处的磁路的横截面的宽度大于在两个端部中的每一个处的磁路的横截面。

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