会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS
    • 具有特征自由层的CPP型磁阻效应元件
    • US20090061258A1
    • 2009-03-05
    • US11847521
    • 2007-08-30
    • Tomohito MIZUNOYoshihiro TSUCHIYAShinji HARAKoji SHIMAZAWATsutomu CHOU
    • Tomohito MIZUNOYoshihiro TSUCHIYAShinji HARAKoji SHIMAZAWATsutomu CHOU
    • G11B5/39
    • B82Y25/00G01R33/093G11B5/3932Y10T428/1129
    • A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface.
    • 磁场检测元件包括:堆叠,其包括其磁化方向根据外部磁场而变化的第一,第二和第三磁性层,夹在第一磁性层和第二磁性层之间的第一非磁性中间层 在第一磁性层和第二磁性层之间产生磁阻效应的第一非磁性中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层,第二非磁性中间层 中间层,允许第二磁性层和第三磁性层交换耦合,使得其磁化方向在没有磁场的情况下彼此反平行,所述堆叠适于使得感测电流沿垂直于 其膜表面; 以及偏置磁性层,其设置在所述堆叠的一侧,所述侧面与所述堆叠的空气支承表面相对,所述偏置磁性层沿垂直于所述空气轴承的方向向所述堆叠施加偏置磁场 表面。
    • 3. 发明申请
    • MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM
    • 磁阻效应器件,薄膜磁头,头盖组件和硬盘系统
    • US20080106827A1
    • 2008-05-08
    • US11931219
    • 2007-10-31
    • Koji SHIMAZAWAYoshihiro TsuchiyaTomohito MizunoKei Hirata
    • Koji SHIMAZAWAYoshihiro TsuchiyaTomohito MizunoKei Hirata
    • G11B5/33
    • G11B5/39B82Y25/00B82Y40/00G01R33/093G11B5/3906G11B5/3993H01F10/3272H01F41/306H01L43/08
    • The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages: the semiconductor layer forming a part of the spacer layer can be so thicker than ever while keeping the area resistivity of the device low as desired, ever higher MR performance is achievable, and the variation of the area resistivity of the device can be substantially held back with much more improvements in film performance.
    • 本发明提供一种包括间隔层的CPP-GMR装置。 间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层,以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层,还包括功函数控制层 形成在第一非磁性金属层和半导体层之间和/或第二非磁性金属层与半导体层之间。 半导体层是n型半导体,功函数控制层由功函数小于所述第一非磁性金属层的功函数和所述第二非磁性金属层构成。 因此,可以获得更多的改进的优点:形成间隔层的一部分的半导体层可以比以往更厚,同时保持器件的面积电阻率低,可以实现更高的MR性能,并且变化 可以基本上阻止装置的面积电阻率,同时具有更多的薄膜性能的改进。
    • 4. 发明申请
    • MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD
    • 磁阻效应元件和薄膜磁头
    • US20080218907A1
    • 2008-09-11
    • US11682421
    • 2007-03-06
    • Tomohito MIZUNOKei HIRATAYoshihiro TSUCHIYAKoji SHIMAZAWA
    • Tomohito MIZUNOKei HIRATAYoshihiro TSUCHIYAKoji SHIMAZAWA
    • G11B5/39
    • G11B5/59683
    • A magneto-resistance effect element (MR element) used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first non-magnetic metal layer, a semiconductor layer, and a second non-magnetic metal layer. The first non-magnetic metal layer and the second non-magnetic metal layer comprise CuPt films having a thickness ranging from a minimum of 0.2 nm to a maximum of 2.0 nm, and the Pt content ranges from a minimum of 5 at % to a maximum of 25 at %. The semiconductor layer comprises a ZnO film, ZnS film, or GaN film having a thickness ranging from a minimum of 1.0 nm to a maximum of 2.5 nm.
    • 用于薄膜磁头的磁阻效应元件(MR元件)由层叠的缓冲层,反铁磁层,钉扎层,间隔层,自由层和覆盖层构成 并且感测电流经由下屏蔽层和上屏蔽层沿着与层表面正交的方向流过元件。 被钉扎层包括其中磁化方向固定的外层,非磁性中间层和作为铁磁层的内层。 间隔层包括第一非磁性金属层,半导体层和第二非磁性金属层。 第一非磁性金属层和第二非磁性金属层包括厚度范围最小为0.2nm至最大2.0nm的CuPt膜,并且Pt含量范围为最小值5at%至最大值 为25原子%。 半导体层包括厚度范围为1.0nm至最大2.5nm的ZnO膜,ZnS膜或GaN膜。
    • 5. 发明申请
    • MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM
    • 磁阻效应器件,薄膜磁头,头盖组件和硬盘系统
    • US20080100968A1
    • 2008-05-01
    • US11870097
    • 2007-10-10
    • Koji SHIMAZAWAYoshihiro TsuchiyaTomohito MizunoKei Hirata
    • Koji SHIMAZAWAYoshihiro TsuchiyaTomohito MizunoKei Hirata
    • G11B5/33
    • G11B5/3909B82Y10/00B82Y25/00B82Y40/00G01R33/093G11B5/3906G11B2005/3996H01F10/3272H01F41/305Y10T29/49044Y10T29/49048
    • The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The free layer functions such that the direction of magnetization changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer. It is thus possible to achieve very favorable advantages of obtaining high MR performance without increasing the head noise, and holding back variations of device's area resistivity (AR), thereby making much more improvements in the reliability of film characteristics.
    • 本发明提供了一种具有CPP(垂直于平面的电流)结构的巨磁阻效应器件(CPP-GMR器件),该结构包括间隔层,以及固定磁化层和自由层,间隔层介于 它们具有沿堆叠方向施加的感测电流。 自由层起着使得磁化方向取决于外部磁场的作用。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层,以及形成在第一和第二非磁性金属层之间的半导体层。 半导体层是n型氧化物半导体。 当依次形成第一和第二非磁性金属层时,在第二非磁性金属层之前形成第一非磁性金属层,并且在第一和半导体层之间形成抗氧化层。 抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。 因此,可以获得非常有利的优点,即不增加磁头噪声,并且抑制器件面积电阻率(AR)的变化,从而在膜特性的可靠性方面进一步提高,从而获得高MR性能。