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1. 发明申请

US20100236998A1 CHARGING APPARATUS 有权
标题翻译：充电器
公开(公告)号：US20100236998A1
公开(公告)日：2010-09-23
申请号：US12678108
申请日：2008-09-25
申请人： Koji Nakagawa , Masaaki Muroi , Shinichi Torigoe , Fumihiro Nagaike , Ryohei Nakamura , Kenichi Higashi , Tsuyoshi Gouda
发明人： Koji Nakagawa , Masaaki Muroi , Shinichi Torigoe , Fumihiro Nagaike , Ryohei Nakamura , Kenichi Higashi , Tsuyoshi Gouda
IPC分类号： B01D35/157
CPC分类号： B01D37/00
摘要： Intended is to reduce pressure fluctuations across a filter (14) for filtering a resist liquid. Provided is a charging apparatus comprising a charge liquid tank (2) reserving the resist liquid, a charge liquid passage (4) for feeding the resist liquid fed from the charge liquid tank (2) by a feed pump (10), to a charge nozzle (8), a recovery passage (16) branched from a branch portion (18) midway of the charge liquid passage (4) and communicating with the charge liquid tank (2), a charge valve (12) disposed in the charge liquid passage (4) on the downstream side of the branch portion (18) (or in the downstream portion (4B) of the charge liquid passage (4)), a recovery valve (20) disposed in the recovery passage (16), the filter (14) interposed between the pump (10) and the branch portion (18), servomotors for driving the charge valve (12) and the recovery valve (20) individually, and a control device (24) for controlling the servomotors to adjust the openings of the charge valve (12) and the recovery valve (20). The opening of the recovery valve (20) is so controlled that the pressures on the upstream side and the downstream side of the filter (14) may not fluctuate.
摘要翻译：旨在减少用于过滤抗蚀剂液体的过滤器（14）上的压力波动。本发明提供一种充电装置，其特征在于，包括：储存所述抗蚀剂液体的充电液体罐（2），用于将由所述进料泵（10）供给的所述补充液体罐（2）的所述抗蚀剂液体供给到充电液体通道喷嘴（8），从充液液体通道（4）中间的分支部分（18）分支并与充注液体罐（2）连通的回收通道（16），设置在充液液体在分支部分18的下游侧（或充液液体通道（4）的下游部分（4B））中的通道（4）），设置在回收通道（16）中的回收阀（20）介于泵（10）和分支部（18）之间的过滤器（14），用于分别驱动增压阀（12）和回收阀（20）的伺服电机，以及用于控制伺服电机调节的控制装置充气阀（12）和回收阀（20）的开口。回收阀（20）的打开被控制，使得过滤器（14）的上游侧和下游侧的压力可能不波动。

2. 发明授权

US08409431B2 Charging apparatus 有权
标题翻译：充电设备
公开(公告)号：US08409431B2
公开(公告)日：2013-04-02
申请号：US12678108
申请日：2008-09-25
申请人： Koji Nakagawa , Masaaki Muroi , Shinichi Torigoe , Fumihiro Nagaike , Ryohei Nakamura , Kenichi Higashi , Tsuyoshi Gouda
发明人： Koji Nakagawa , Masaaki Muroi , Shinichi Torigoe , Fumihiro Nagaike , Ryohei Nakamura , Kenichi Higashi , Tsuyoshi Gouda
IPC分类号： B01D29/60
CPC分类号： B01D37/00
摘要： Intended is to reduce pressure fluctuations across a filter (14) for filtering a resist liquid. A charging apparatus is provided including a charge liquid tank (2) of resist liquid, a feed pump (10), a charge nozzle (8), a recovery passage (16), a recovery valve (20) disposed in the recovery passage (16), the filter (14), and a control device (24) for controlling the servomotors to adjust the openings of the charge valve (12) and the recovery valve (20) so that the pressures on the upstream side and the downstream side of the filter (14) may not fluctuate.
摘要翻译：旨在减少用于过滤抗蚀剂液体的过滤器（14）上的压力波动。本发明提供一种充电装置，包括：抗蚀剂液体的充注液罐（2），进料泵（10），充气喷嘴（8），回收通道（16），回收通道（20） 16），过滤器（14）和控制装置（24），用于控制伺服电机调节充气阀（12）和回收阀（20）的开口，使得上游侧和下游侧的压力的过滤器（14）可能不会波动。

3. 发明授权

US07695889B2 Copolymer for semiconductor lithography and process for production thereof 失效
标题翻译：半导体光刻用共聚物及其制造方法
公开(公告)号：US07695889B2
公开(公告)日：2010-04-13
申请号：US11430738
申请日：2006-05-09
申请人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
发明人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
IPC分类号： G03F7/00 , G03F7/004 , C08F2/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0046
摘要： A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid.The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.
摘要翻译：一种用于半导体光刻的共聚物，其至少包含具有羧酸酯结构的重复单元（A），其通过酸和含羧基的重复单元（B）的作用而在碱中的溶解度增加，该共聚物经由（共）聚合至少一种产生重复单元的单体（A）的步骤（P）和形成重复单元（B）的步骤（Q），在含有重复单元（A）的（共））聚合物和/或提供重复单元（A）的单体和酸。该共聚物用于生产半导体，作为抗蚀剂聚合物，其粗糙度小，显影缺陷少，并且光刻性能如DOF等优异。

4. 发明申请

US20090092924A1 METHOD OF PRODUCING POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：生产正极性组合物的方法，阳性电阻组合物和形成电阻图案的方法
公开(公告)号：US20090092924A1
公开(公告)日：2009-04-09
申请号：US11996052
申请日：2006-05-18
申请人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo
发明人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo
IPC分类号： G03F7/028 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/16 , G03F7/162 , Y10S430/111
摘要： A method of forming a positive resist composition of the present invention includes a step (I) of passing a positive resist composition, which is obtained by dissolving a resin component (A) that displays increased alkali solubility under the action of acid and an acid generator component (B) that generates acid upon exposure in an organic solvent (S), through a filter (f1) equipped with a nylon membrane, wherein the resin component (A) is a copolymer containing at least two structural units obtained by polymerizing at least one monomer in the presence of acid. According to the present invention, it is possible to provide a method of producing a positive resist composition, a positive resist composition, and a method of forming a resist pattern that are capable of forming a resist pattern with reduced levels of both bridge-type defects and reprecipitation-type defects.
摘要翻译：形成本发明的正型抗蚀剂组合物的方法包括使通过溶解在酸和酸发生剂的作用下显示出增加的碱溶性的树脂组分（A）获得的正型抗蚀剂组合物的步骤（I）通过配备尼龙膜的过滤器（f1）在有机溶剂（S）中暴露时产生酸的组分（B），其中树脂组分（A）是含有至少两个通过至少聚合得到的结构单元的共聚物一种单体在存在酸的情况下。根据本发明，可以提供一种制造正型抗蚀剂组合物，正型抗蚀剂组合物的方法和形成抗蚀剂图案的方法，该抗蚀剂图案能够形成两种桥型缺陷水平的抗蚀剂图案和再沉淀型缺陷。

5. 发明申请

US20060257784A1 Copolymer for semiconductor lithography and process for production thereof 失效
标题翻译：半导体光刻用共聚物及其制造方法
公开(公告)号：US20060257784A1
公开(公告)日：2006-11-16
申请号：US11430738
申请日：2006-05-09
申请人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
发明人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0046
摘要： A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid. The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.
摘要翻译：一种用于半导体光刻的共聚物，其至少包含具有羧酸酯结构的重复单元（A），其通过酸和含羧基的重复单元（B）的作用而在碱中的溶解度增加，该共聚物经由（共）聚合至少一种产生重复单元的单体（A）的步骤（P）和形成重复单元（B）的步骤（Q），在含有重复单元（A）的（共））聚合物和/或提供重复单元（A）的单体和酸。该共聚物用于生产半导体，作为抗蚀剂聚合物，其粗糙度小，显影缺陷少，并且光刻性能如DOF等优异。

6. 发明申请

US20060141384A1 Process for refining crude resin for electronic material 有权
标题翻译：电解材料粗树脂精制工艺
公开(公告)号：US20060141384A1
公开(公告)日：2006-06-29
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂当与水结合时分离成两层，（b2）水。

7. 发明授权

US07972762B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07972762B2
公开(公告)日：2011-07-05
申请号：US11913912
申请日：2006-04-26
申请人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita , Takanori Yamagishi , Tomo Oikawa
发明人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita , Takanori Yamagishi , Tomo Oikawa
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/111
摘要： Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (α-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.
摘要翻译：提供了具有较少缺陷和优异的光刻特性的正型抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包括在主链上具有衍生自（α-低级烷基）丙烯酸酯的结构单元并且在酸的作用下表现出增加的碱溶解性的酸性产生组分（B）的树脂组分（A）），其中树脂组分（A）是具有至少两个结构单元的共聚物，其中该结构单元在聚合至少一种用于制备它们的单体时通过掺入酸而获得。

8. 发明授权

US07879527B2 Method of producing positive resist composition, positive resist composition, and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物的制造方法，正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07879527B2
公开(公告)日：2011-02-01
申请号：US11996052
申请日：2006-05-18
申请人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo
发明人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/16 , G03F7/162 , Y10S430/111
摘要： A method of forming a positive resist composition of the present invention includes a step (I) of passing a positive resist composition, which is obtained by dissolving a resin component (A) that displays increased alkali solubility under the action of acid and an acid generator component (B) that generates acid upon exposure in an organic solvent (S), through a filter (f1) equipped with a nylon membrane, wherein the resin component (A) is a copolymer containing at least two structural units obtained by polymerizing at least one monomer in the presence of acid. According to the present invention, it is possible to provide a method of producing a positive resist composition, a positive resist composition, and a method of forming a resist pattern that are capable of forming a resist pattern with reduced levels of both bridge-type defects and reprecipitation-type defects.
摘要翻译：形成本发明的正型抗蚀剂组合物的方法包括使通过溶解在酸和酸发生剂的作用下显示出增加的碱溶性的树脂组分（A）而获得的正型抗蚀剂组合物的步骤（I）通过配备有尼龙膜的过滤器（f1）在有机溶剂（S）中暴露时产生酸的组分（B），其中树脂组分（A）是含有至少两个通过至少聚合得到的结构单元的共聚物一种单体在存在酸的情况下。根据本发明，可以提供一种制造正型抗蚀剂组合物，正型抗蚀剂组合物的方法和形成抗蚀剂图案的方法，该抗蚀剂图案能够形成两种桥型缺陷水平的抗蚀剂图案和再沉淀型缺陷。

9. 发明申请

US20090233220A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20090233220A1
公开(公告)日：2009-09-17
申请号：US11913912
申请日：2006-04-26
申请人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita , Takanori Yamagishi , Tomo Oikawa
发明人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita , Takanori Yamagishi , Tomo Oikawa
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/111
摘要： Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (α-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.
摘要翻译：提供了具有较少缺陷和优异的光刻特性的正型抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包括在主链上具有衍生自（α-低级烷基）丙烯酸酯的结构单元并且在酸的作用下表现出增加的碱溶解性的酸性产生组分（B）的树脂组分（A）），其中树脂组分（A）是具有至少两个结构单元的共聚物，其中该结构单元在聚合至少一种用于制备它们的单体时通过掺入酸而获得。

10. 发明授权

US07276575B2 Process for refining crude resin for resist 有权
标题翻译：精制粗树脂抗蚀剂的方法
公开(公告)号：US07276575B2
公开(公告)日：2007-10-02
申请号：US10544324
申请日：2004-01-29
申请人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
发明人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
IPC分类号： C08F6/00
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The refining process for the crude resin of resist resin (A) used in a photoresist composition includes at least the resist resin (A) and an acid generator (B) dissolved in a first organic solvent (C1), such that if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution including the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译：用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。用于光致抗蚀剂组合物中的抗蚀剂树脂（A）的粗树脂的精制方法至少包含溶解在第一有机溶剂（C 1）中的抗蚀剂树脂（A）和酸产生剂（B），使得如果浓度在光致抗蚀剂组合物中的组分（A）的标记为X，并且包含溶解在第二有机溶剂（C 2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度被标记为Y，然后（i）制备粗制树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。

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