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1. 发明申请

US20060141384A1 Process for refining crude resin for electronic material 有权
标题翻译：电解材料粗树脂精制工艺
公开(公告)号：US20060141384A1
公开(公告)日：2006-06-29
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂当与水结合时分离成两层，（b2）水。

2. 发明授权

US07312015B2 Process for refining crude resin for electronic material 有权
标题翻译：电解材料粗树脂精制工艺
公开(公告)号：US07312015B2
公开(公告)日：2007-12-25
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , C08F6/00 , C08J3/00
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂当与水结合时分离成两层，（b2）水。

3. 发明授权

US07276575B2 Process for refining crude resin for resist 有权
标题翻译：精制粗树脂抗蚀剂的方法
公开(公告)号：US07276575B2
公开(公告)日：2007-10-02
申请号：US10544324
申请日：2004-01-29
申请人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
发明人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
IPC分类号： C08F6/00
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The refining process for the crude resin of resist resin (A) used in a photoresist composition includes at least the resist resin (A) and an acid generator (B) dissolved in a first organic solvent (C1), such that if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution including the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译：用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。用于光致抗蚀剂组合物中的抗蚀剂树脂（A）的粗树脂的精制方法至少包含溶解在第一有机溶剂（C 1）中的抗蚀剂树脂（A）和酸产生剂（B），使得如果浓度在光致抗蚀剂组合物中的组分（A）的标记为X，并且包含溶解在第二有机溶剂（C 2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度被标记为Y，然后（i）制备粗制树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。

4. 发明申请

US20060135745A1 Process for refining crude resin for resist 有权
标题翻译：精制粗树脂抗蚀剂的方法
公开(公告)号：US20060135745A1
公开(公告)日：2006-06-22
申请号：US10544324
申请日：2004-01-29
申请人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
发明人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
IPC分类号： C08F6/00
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist is provided, which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The process provides a refining process for the crude resin of a resist resin (A) used in a photoresist composition comprising at least the resist resin (A) and an acide generator (B) dissolved in a first organic solvent (C1), wherein if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution comprising the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译：提供了用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。该方法为至少包含溶解在第一有机溶剂（C1）中的抗蚀剂树脂（A）和酰化发生剂（B））的光致抗蚀剂组合物中用于抗蚀剂树脂（A）的粗树脂提供精制方法，其中如果将光致抗蚀剂组合物中组分（A）的浓度标记为X，将包含溶于第二有机溶剂（C2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度）标记为Y，然后（i）制备粗树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。

5. 发明申请

US20060014098A1 Process for producing photoresist composition, filter, coater and photoresist composition 有权
标题翻译：光刻胶组合物，滤光片，涂布机和光致抗蚀剂组合物的制造方法
公开(公告)号：US20060014098A1
公开(公告)日：2006-01-19
申请号：US10536047
申请日：2003-12-18
申请人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
发明人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
IPC分类号： G03C1/76
CPC分类号： B01D61/58 , B01D69/02 , B01D71/26 , B01D71/56 , G03F7/0397 , G03F7/16 , G03F7/162
摘要： A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.
摘要翻译：提供了获得能够减少显影后的抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术。此外，获得具有优异的储存稳定性特性的光致抗蚀剂组合物作为抗蚀剂溶液的技术（保存稳定性）; 并且提供了一种获得光刻胶组合物的技术，其提供了几乎完全降低了处理后的灵敏度变化和抗蚀剂图案尺寸的技术。含有树脂组分（A），产生暴露酸的产酸组分（B）和有机溶剂（C）的光致抗蚀剂组合物通过第一过滤器2，第一过滤器2配备有具有ζ电位为在pH 7.0的蒸馏水中大于-20mV，但不超过15mV。

6. 发明授权

US07771911B2 Process for producing photoresist composition, filter, coater and photoresist composition 有权
标题翻译：光致抗蚀剂组合物，过滤器，涂布机和光致抗蚀剂组合物的制造方法
公开(公告)号：US07771911B2
公开(公告)日：2010-08-10
申请号：US10536047
申请日：2003-12-18
申请人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
发明人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
IPC分类号： G03C1/00 , C02F1/44
CPC分类号： B01D61/58 , B01D69/02 , B01D71/26 , B01D71/56 , G03F7/0397 , G03F7/16 , G03F7/162
摘要： A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.
摘要翻译：提供了获得能够减少显影后的抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术。此外，获得具有优异的储存稳定性特性的光致抗蚀剂组合物作为抗蚀剂溶液的技术（保存稳定性）; 并且提供了一种获得光刻胶组合物的技术，其提供了几乎完全降低了处理后的灵敏度变化和抗蚀剂图案尺寸的技术。含有树脂组分（A），产生暴露酸的产酸组分（B）和有机溶剂（C）的光致抗蚀剂组合物通过配备有具有更多ζ电位的第一膜的第一过滤器2a 在pH 7.0的蒸馏水中为-20mV，但不超过15mV。

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