会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of fabricating a semiconductor device comprising a MOS portion
and a bipolar portion
    • 制造包括MOS部分和双极部分的半导体器件的方法
    • US6004840A
    • 1999-12-21
    • US744524
    • 1996-11-06
    • Koji KimuraYuichi NakashimaHiroshi Kawamoto
    • Koji KimuraYuichi NakashimaHiroshi Kawamoto
    • H01L21/768H01L21/8249
    • H01L21/76895H01L21/8249
    • In a semiconductor device, a first conductive film made of, for example, polysilicon is formed on the element region of the semiconductor substrate. An insulation film is formed on the semiconductor substrate, for covering at least the first conductive film. A second conductive film covers at least the end portion of the insulation film. The first conductive film is used as a gate electrode of the MOS transistor, and the second conductive film is used as a protection film for covering and protecting the end portion of the insulation film and a lead-out electrode of the bipolar transistor. The end portion of the insulation film is covered and protected by the second conductive film obtained by patterning the conductive layer made of, for example, polysilicon. Further, the conductive layer is patterned so that stepped portions formed on the insulation film and the end portion of the insulation film are covered, and using this pattern, anisotropic etching is carried out. Thus, formation of residue on the side-wall of the second conductive film, on the stepped portions formed as covering the first conductive film, can be avoided. In a later step, the pattern of the second conductive film which covers the stepped portion is removed by etching.
    • 在半导体器件中,在半导体衬底的元件区域上形成由例如多晶硅制成的第一导电膜。 绝缘膜形成在半导体衬底上,用于至少覆盖第一导电膜。 第二导电膜至少覆盖绝缘膜的端部。 第一导电膜用作MOS晶体管的栅电极,第二导电膜用作覆盖和保护绝缘膜的端部和双极晶体管的引出电极的保护膜。 绝缘膜的端部由通过图案化例如由多晶硅制成的导电层获得的第二导电膜覆盖和保护。 此外,导电层被图案化,使得形成在绝缘膜上的阶梯部分和绝缘膜的端部被覆盖,并且使用该图案进行各向异性蚀刻。 因此,可以避免在形成为覆盖第一导电膜的阶梯部分上在第二导电膜的侧壁上形成残留物。 在后续步骤中,通过蚀刻去除覆盖阶梯部分的第二导电膜的图案。
    • 2. 发明授权
    • Semiconductor device with an insulation film having an end covered by a
conductive film
    • 具有绝缘膜的半导体器件,其端部被导电膜覆盖
    • US5604371A
    • 1997-02-18
    • US421795
    • 1995-04-14
    • Koji KimuraYuichi NakashimaHiroshi Kawamoto
    • Koji KimuraYuichi NakashimaHiroshi Kawamoto
    • H01L21/768H01L21/8249H01L29/41
    • H01L21/8249H01L21/76895
    • In a semiconductor device, a first conductive film made of, for example, polysilicon is formed on the element region of the semiconductor substrate. An insulation film is formed on the semiconductor substrate, for covering at least the first conductive film. A second conductive film covers at least the end portion of the insulation film. The first conductive film is used as a gate electrode of the MOS transistor, and the second conductive film is used as a protection film for covering and protecting the end portion of the insulation film and a lead-out electrode of the bipolar transistor. The end portion of the insulation film is covered and protected by the second conductive film obtained by patterning the conductive layer made of, for example, polysilicon. Further, the conductive layer is patterned so that stepped portions formed on the insulation film and the end portion of the insulation film are covered, and using this pattern, anisotropic etching is carried out. Thus, formation of residue on the side-wall of the second conductive film, on the stepped portions formed as covering the first conductive film, can be avoided. In a later step, the pattern of the second conductive film which covers the stepped portion is removed by etching.
    • 在半导体器件中,在半导体衬底的元件区域上形成由例如多晶硅制成的第一导电膜。 绝缘膜形成在半导体衬底上,用于至少覆盖第一导电膜。 第二导电膜至少覆盖绝缘膜的端部。 第一导电膜用作MOS晶体管的栅电极,第二导电膜用作覆盖和保护绝缘膜的端部和双极晶体管的引出电极的保护膜。 绝缘膜的端部由通过图案化例如由多晶硅制成的导电层获得的第二导电膜覆盖和保护。 此外,导电层被图案化,使得形成在绝缘膜上的阶梯部分和绝缘膜的端部被覆盖,并且使用该图案进行各向异性蚀刻。 因此,可以避免在形成为覆盖第一导电膜的阶梯部分上在第二导电膜的侧壁上形成残留物。 在后续步骤中,通过蚀刻去除覆盖阶梯部分的第二导电膜的图案。
    • 9. 发明申请
    • Lubricant composition, bearing apparatus, sliding member and triazine-ring compound
    • 润滑剂组合物,轴承装置,滑动构件和三嗪环化合物
    • US20070054814A1
    • 2007-03-08
    • US11512084
    • 2006-08-30
    • Masayuki NegoroKen KawataHiroshi Kawamoto
    • Masayuki NegoroKen KawataHiroshi Kawamoto
    • C07D251/54
    • C07D251/54
    • The novel lubricant composition is disclosed. The composition comprises at least one compound, exhibiting a minimum friction coefficient under a pressure equal to or greater than 10 MPa with the increase of a pressure and a viscosity-pressure coefficient equal to or less than 20 GPa−1 at 40° C., represented by a formula (1). In the formula, Y and Z respectively represent a single bond or a bivalent linking group selected from the group consisting of NRa where Ra is a hydrogen atom or a C1-30 alkyl group, oxygen, sulfur, carbonyl, sulfonyl and any combinations thereof; A and B respectively represent a substituted or non-substituted, alkyl group, alkenyl group, alkynyl group, aryl group or heterocyclic group; T is —S—R1, —O—R2 or —NR3R4; and R1, R2, R3 and R4 respectively represent a substituted or non-substituted, alkyl group, alkenyl group, alkynyl group, aryl group or heterocyclic group.
    • 公开了新的润滑剂组合物。 该组合物包含至少一种化合物,在压力等于或大于10MPa的压力和粘度压力系数等于或小于20GPa -1的情况下表现出最小的摩擦系数。 > 40℃,由式(1)表示。 在该式中,Y和Z分别表示单键或选自NR a的二价连接基团,其中R a是氢原子或C 1 -C 30烷基,氧,硫, 羰基,磺酰基及其任何组合; A和B分别表示取代或未取代的烷基,烯基,炔基,芳基或杂环基; T是-S-R 1,-O-R 2或-NR 3 R 4; R 1,R 2,R 3和R 4分别表示取代或未取代的烷基 烯基,炔基,芳基或杂环基。