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1. 发明申请

US20050209118A1 Photoresist residue remover composition and semiconductor circuit element production process employing the same 审中-公开
标题翻译：光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法
公开(公告)号：US20050209118A1
公开(公告)日：2005-09-22
申请号：US11008019
申请日：2004-12-09
申请人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
发明人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
IPC分类号： H01L21/027 , G03F7/42 , H01L21/02 , H01L21/304 , C11D1/00
CPC分类号： G03F7/423 , H01L21/02063 , H01L21/02071
摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.
摘要翻译：提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。还提供了一种制造半导体电路元件的方法，其中在形成铝，铜，钨和任何这些金属作为主要成分的合金的任何金属的布线的步骤中，使用光刻胶残渣去除剂组合物用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

2. 发明授权

US07816313B2 Photoresist residue remover composition and semiconductor circuit element production process employing the same 失效
标题翻译：光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法
公开(公告)号：US07816313B2
公开(公告)日：2010-10-19
申请号：US12082173
申请日：2008-04-08
申请人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
发明人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
IPC分类号： H01L21/02
CPC分类号： G03F7/423 , H01L21/02063 , H01L21/02071
摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.
摘要翻译：提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。还提供了一种用于制造半导体电路元件的方法，其中在以任何这些金属为主要成分的铝，铜，钨和任何金属的任何金属的布线形成步骤中，使用光刻胶残渣去除剂组合物用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

3. 发明申请

US20080318424A1 Photoresist residue remover composition and semiconductor circuit element production process employing the same 失效
标题翻译：光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法
公开(公告)号：US20080318424A1
公开(公告)日：2008-12-25
申请号：US12082173
申请日：2008-04-08
申请人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
发明人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
IPC分类号： H01L21/44
CPC分类号： G03F7/423 , H01L21/02063 , H01L21/02071
摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.
摘要翻译：提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。还提供了一种用于制造半导体电路元件的方法，其中在以任何这些金属为主要成分的铝，铜，钨和任何金属的任何金属的布线形成步骤中，使用光刻胶残渣去除剂组合物用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

4. 发明授权

US07345352B2 Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效
标题翻译：绝缘管，采用该管的半导体器件及其制造方法
公开(公告)号：US07345352B2
公开(公告)日：2008-03-18
申请号：US11715844
申请日：2007-03-09
申请人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
发明人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
IPC分类号： H01L29/00
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译：绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔，具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。

5. 发明授权

US06995472B2 Insulating tube 失效
标题翻译：绝缘管
公开(公告)号：US06995472B2
公开(公告)日：2006-02-07
申请号：US10693504
申请日：2003-10-27
申请人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
发明人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
IPC分类号： H01L23/48
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译：绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔，具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。

6. 发明授权

US07282437B2 Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效
标题翻译：绝缘管，采用该管的半导体器件及其制造方法
公开(公告)号：US07282437B2
公开(公告)日：2007-10-16
申请号：US11244293
申请日：2005-10-06
申请人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
发明人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
IPC分类号： H01L21/4763
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译：绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔，具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。

7. 发明申请

US20070170594A1 Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效
公开(公告)号：US20070170594A1
公开(公告)日：2007-07-26
申请号：US11715844
申请日：2007-03-09
申请人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
发明人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.

8. 发明申请

US20060054990A1 Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效
标题翻译：绝缘管，采用该管的半导体器件及其制造方法
公开(公告)号：US20060054990A1
公开(公告)日：2006-03-16
申请号：US11244293
申请日：2005-10-06
申请人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
发明人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
IPC分类号： H01L21/76 , H01L29/00 , H01L21/44
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译：绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔，具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。

9. 发明申请

US20050023690A1 Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效
标题翻译：绝缘管，采用该管的半导体器件及其制造方法
公开(公告)号：US20050023690A1
公开(公告)日：2005-02-03
申请号：US10693504
申请日：2003-10-27
申请人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
发明人： Tsuyoshi Matsumura , Takahito Nakajima , Hiroshi Kawamoto , Mikie Miyasato , Yoshihiro Uozumi
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/44 , H01L23/48
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译：绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔，具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。

10. 发明授权

US08758521B2 Apparatus and method for cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的装置和方法
公开(公告)号：US08758521B2
公开(公告)日：2014-06-24
申请号：US12845371
申请日：2010-07-28
申请人： Yoshihiro Ogawa , Hajime Onoda , Hiroshi Kawamoto
发明人： Yoshihiro Ogawa , Hajime Onoda , Hiroshi Kawamoto
IPC分类号： B08B3/04
CPC分类号： H01L21/67028 , B08B3/022 , C11D11/0047 , H01L21/02057
摘要： A semiconductor substrate cleaning method includes cleaning a semiconductor substrate formed with a line-and-space pattern, rinsing the substrate, supplying the rinse water to rinse the substrate, and drying the substrate. The rinsing includes supplying deionized water and hydrochloric acid into a mixing section to mix the deionized water and the hydrochloric acid into a mixture, heating the mixture in the mixing section by a heater, detecting a pH value and a temperature of the mixture by a pH sensor and a temperature sensor respectively, adjusting an amount of hydrochloric acid supplied into the mixing section so that the rinse water has a predetermined pH value indicative of acidity, and energizing or de-energizing the heater so that the temperature of the mixture detected by the temperature sensor reaches a predetermined temperature, thereby producing the rinse water which has a temperature of not less than 70° C. and is acidic.
摘要翻译：半导体衬底清洁方法包括清洗形成有线间距图案的半导体衬底，漂洗衬底，供应冲洗水以冲洗衬底以及干燥衬底。漂洗包括将去离子水和盐酸加入到混合部分中以将去离子水和盐酸混合成混合物，通过加热器加热混合部分中的混合物，通过pH检测混合物的pH值和温度传感器和温度传感器，调节供应到混合部分中的盐酸的量，使得冲洗水具有指示酸度的预定pH值，以及给加热器通电或断电，使得由温度传感器达到预定温度，从而产生温度不低于70℃并呈酸性的冲洗水。

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