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1. 发明授权

US06495805B2 Method of determining set temperature trajectory for heat treatment system 有权
标题翻译：确定热处理系统设定温度轨迹的方法
公开(公告)号：US06495805B2
公开(公告)日：2002-12-17
申请号：US09933671
申请日：2001-08-22
申请人： Koichi Sakamoto , Wenling Wang , Fujio Suzuki , Moyuru Yasuhara , Keisuke Suzuki
发明人： Koichi Sakamoto , Wenling Wang , Fujio Suzuki , Moyuru Yasuhara , Keisuke Suzuki
IPC分类号： H05B302
CPC分类号： H01L21/67757 , H01L21/67248 , H01L21/67781
摘要： This invention is a method of determining set temperature trajectories for a heat treatment system that conducts a first heat treatment process and a second heat treatment process to an object to be processed. The method comprises the steps of: conducting the first heat treatment process to a first test object to be processed, by using a temporary first set temperature trajectory; measuring a result of the first heat treatment process produced on the first test object to be processed; and determining a first set temperature trajectory for the first heat treatment process by correcting the temporary first set temperature trajectory on the basis of the measured result of the first heat treatment process. The method also comprises the steps of: conducting the second heat treatment process to a second test object to be processed to which the first heat treatment process has been conducted by using the determined first set temperature trajectory, by using a temporary second set temperature trajectory; measuring a result of the first heat treatment process and the second heat treatment process produced on the second test object to be processed; and determining a second set temperature trajectory for the second heat treatment process by correcting the temporary second set temperature trajectory on the basis of the measured result of the first heat treatment process and the second heat treatment process.
摘要翻译：本发明是一种确定对待处理物体进行第一热处理和第二热处理的热处理系统的设定温度轨迹的方法。该方法包括以下步骤：通过使用临时的第一设定温度轨迹对待处理的第一测试对象进行第一热处理过程; 测量在待处理的第一测试对象上产生的第一热处理过程的结果; 以及通过基于第一热处理过程的测量结果校正临时第一设定温度轨迹来确定用于第一热处理过程的第一设定温度轨迹。该方法还包括以下步骤：通过使用临时第二设定温度轨迹，通过使用所确定的第一设定温度轨迹，将第二热处理过程执行到已经进行了第一热处理过程的待处理的第二测试对象; 测量在待处理的第二测试对象上产生的第一热处理过程和第二热处理过程的结果; 以及通过基于第一热处理过程和第二热处理过程的测量结果校正临时第二设定温度轨迹来确定第二热处理过程的第二设定温度轨迹。

2. 发明授权

US06329643B1 Method of temperature-calibrating heat treating apparatus 有权
标题翻译：热处理装置的温度校准方法
公开(公告)号：US06329643B1
公开(公告)日：2001-12-11
申请号：US09653460
申请日：2000-08-31
申请人： Fujio Suzuki , Koichi Sakamoto , Wenling Wang , Moyuru Yasuhara
发明人： Fujio Suzuki , Koichi Sakamoto , Wenling Wang , Moyuru Yasuhara
IPC分类号： H05B102
CPC分类号： H01L21/67253 , C30B25/10 , C30B31/12 , F27D19/00 , H01L21/67248
摘要： A second vertical heat treating apparatus is temperature-calibrated based on a heat treatment result obtained by a first vertical heat treating apparatus for reference. First, temperature measurement wafers is heated in the first apparatus to obtain set values of temperature controllers for a target value of temperature. Then, wafers are subjected to an oxidizing process in the first apparatus by using these set values to form an oxide film. The thickness of the oxide film is measured and recorded as a reference film thickness. Then, wafers are subjected to an oxidizing process in a second apparatus at temperatures near the target value to form an oxide film. The thickness of the oxide film is measured, and difference in thickness between the oxide film formed in the second apparatus and the reference film thickness is obtained. The oxidizing process in the second apparatus is repeated to obtain set values of temperature controllers for the second apparatus at the time when the difference in film thickness becomes zero. The second apparatus is temperature-calibrated on the basis of the set value thus obtained.
摘要翻译：基于由第一垂直热处理装置获得的热处理结果进行参考的第二垂直热处理装置进行温度校准。首先，在第一装置中加热温度测量晶片，以获得目标温度值的温度控制器的设定值。然后，通过使用这些设定值在第一装置中对晶片进行氧化处理，形成氧化膜。氧化膜的厚度被测量并记录为参考膜厚度。然后，在靠近目标值的温度下，在第二装置中对晶片进行氧化处理，以形成氧化膜。测量氧化膜的厚度，并且获得在第二装置中形成的氧化膜之间的厚度差和参考膜厚度。重复第二装置中的氧化处理，以获得当膜厚度差为零时第二装置的温度控制器的设定值。基于由此获得的设定值对第二装置进行温度校准。

3. 发明授权

US07138607B2 Determining method of thermal processing condition 有权
标题翻译：热处理条件的确定方法
公开(公告)号：US07138607B2
公开(公告)日：2006-11-21
申请号：US10871277
申请日：2004-06-21
申请人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara
发明人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara
IPC分类号： F27B5/14
CPC分类号： H01L22/20 , H01L21/3185 , H01L21/324 , Y10S438/907 , Y10S438/909 , Y10S438/935
摘要： The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups.
摘要翻译：本发明是一种根据各自对应的设定温度曲线来确定控制多个组的各个衬底温度的方法的设定温度曲线的方法。本发明包括第一热处理步骤，根据分类为多个组的第一批衬底的各自的预定临时设定温度曲线来控制多个组的各个衬底温度，以及引入工艺气体以进行热处理以在基材上形成薄膜; 测量形成在基板上的膜的厚度的第一膜厚测量步骤; 以及第一设定温度曲线修正步骤，分别基于所测量的厚度修正临时设定温度曲线，使得在加热过程中形成的薄膜的厚度在多个组之间基本相同。

4. 发明授权

US06787377B2 Determining method of thermal processing condition 有权
公开(公告)号：US06787377B2
公开(公告)日：2004-09-07
申请号：US10333585
申请日：2003-01-24
申请人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara
发明人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara
IPC分类号： G01R3126
CPC分类号： H01L22/20 , H01L21/3185 , H01L21/324 , Y10S438/907 , Y10S438/909 , Y10S438/935
摘要： The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups. In the first heat processing step, the provisional set temperature profiles are profiles whose set temperatures change as time passes.

5. 发明授权

US06803548B2 Batch-type heat treatment apparatus and control method for the batch-type heat treatment apparatus 有权
标题翻译：批式热处理装置和批式热处理装置的控制方法
公开(公告)号：US06803548B2
公开(公告)日：2004-10-12
申请号：US09950876
申请日：2001-09-13
申请人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara , Sunil Shah , Pradeep Pandey , Mark Erickson
发明人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara , Sunil Shah , Pradeep Pandey , Mark Erickson
IPC分类号： H05B102
CPC分类号： H01L21/67109 , C23C16/46 , C23C16/52 , C30B31/18 , F27D19/00 , F27D21/0014 , G05D23/1932 , H01L21/67248
摘要： A heat treatment apparatus for making a heat treatment while estimating temperatures of objects-to-be-processed that can estimate correct temperatures of the objects-to-be-processed. A reaction tube includes heaters and temperature sensors, and receives a wafer boat. A controller estimates temperatures of wafers and temperatures of the temperature sensors in zones in the reaction tube corresponding to the heaters by using the temperature sensors and electric powers of the heaters. Based on relationships between estimated temperatures of the temperature sensors and really metered temperatures, functions expressing the relationships between the estimated temperatures and the really metered temperatures are given for the respective zones. The functions are substituted by the estimated wafer temperatures to correct the estimated wafer temperatures. Electric powers to be fed to the respective heaters are respectively controlled so that the corrected wafer temperatures are converged to target temperature trajectories.
摘要翻译：一种用于进行热处理的热处理装置，同时估计能够估计被处理物体的正确温度的待处理物体的温度。反应管包括加热器和温度传感器，并接收晶片舟。控制器通过使用温度传感器和加热器的电力来估计对应于加热器的反应管中的晶片温度和温度传感器的温度。基于温度传感器的估计温度和真正计量温度之间的关系，给出了各个区域表达估计温度和真实计量温度之间的关系的函数。功能由估计的晶片温度代替，以校正估计的晶片温度。分别控制供给到各个加热器的电力，使得校正的晶片温度收敛到目标温度轨迹。

6. 发明授权

US06730885B2 Batch type heat treatment system, method for controlling same, and heat treatment method 有权
标题翻译：批式热处理系统，其控制方法和热处理方法
公开(公告)号：US06730885B2
公开(公告)日：2004-05-04
申请号：US09897908
申请日：2001-07-05
申请人： Fujio Suzuki , Wenling Wang , Koichi Sakamoto , Moyuru Yasuhara , Sunil Shah , Pradeep Pandey
发明人： Fujio Suzuki , Wenling Wang , Koichi Sakamoto , Moyuru Yasuhara , Sunil Shah , Pradeep Pandey
IPC分类号： H05B302
CPC分类号： H01L21/67248 , H01L21/67109
摘要： There is provided a batch type heat treatment system, control method and heat treatment method capable of appropriately coping with a multi-product small-lot production. A reaction tube 2 comprises a plurality of heaters 31 through 35 and a plurality of temperature sensors, and houses therein a wafer boat 23. A control part 100 stores therein many mathematical models for estimating (calculating) the temperature of wafers W in the reaction tube 2, in accordance with the number and arranged position of the wafers W mounted on the wafer boat 23, and many target temperature trajectories. If the wafer boat 23 is loaded in the reaction tube 2, a mathematical model and a target temperature trajectory corresponding to the number and arranged position of the mounted wafers W are read. If a deposition process is started, the output of a temperature sensor S and the model are used for estimating the temperature of the wafers W in the reaction tube 2, and the powers to be supplied to the heaters 31 through 35 are separately controlled so that the estimated temperature approaches the target temperature trajectory.
摘要翻译：提供能够适当应对多产品小批量生产的批式热处理系统，控制方法和热处理方法。反应管2包括多个加热器31至35和多个温度传感器，以及在其中容纳晶片舟23.控制部分100存储许多用于根据安装在晶片舟23上的晶片W的数量和布置位置来估计（计算）反应管2中的晶片W的温度的数学模型，以及许多目标温度轨迹。如果晶片舟23装载在反应管2中，则读取与安装的晶片W的数量和排列位置对应的数学模型和目标温度轨迹。如果开始沉积工艺，则使用温度传感器S和模型的输出来估计反应管2中的晶片W的温度，并且分别控制供给到加热器31至35的功率，使得估计的温度接近目标温度轨迹。

7. 发明授权

US06847015B2 Heat treatment apparatus and controller for heat treatment apparatus and control method for heat treatment apparatus 有权
标题翻译：热处理装置用热处理装置及控制装置及热处理装置的控制方法
公开(公告)号：US06847015B2
公开(公告)日：2005-01-25
申请号：US09963381
申请日：2001-09-27
申请人： Wenling Wang , Koichi Sakamoto , Youngchul Park , Fujio Suzuki
发明人： Wenling Wang , Koichi Sakamoto , Youngchul Park , Fujio Suzuki
IPC分类号： C23C16/46 , C23C16/52 , C30B25/16 , C30B31/18 , F27B5/18 , F27D19/00 , G05D23/19 , H01L21/205 , H01L21/22 , H01L21/66 , H05B1/02 , H05B3/02
CPC分类号： H05B1/0233 , C30B25/16 , C30B31/18 , F27D19/00 , G05D23/1917 , G05D23/1931 , H01L22/12
摘要： Temperature control is made without the risk of contaminating object-to-be-processed and with high accuracy. Temperatures are metered out of contact with the objects-to-be-processed, and based on a metered result, estimated temperatures of the objects-to-be-processed are computed. Furthermore, estimation errors of the estimated temperatures are computed to correct the estimated temperatures. Based on a temperature recipe stating relationships between set temperatures and times and the corrected estimated temperatures, a heater is controlled.
摘要翻译：进行温度控制，没有污染被处理物体和高精度的风险。温度与被处理物体不接触地计量，并且基于计量结果，计算待处理对象的估计温度。此外，计算估计温度的估计误差以校正估计的温度。根据描述设定温度和时间之间的关系的温度配方以及校正的估计温度，控制加热器。

8. 发明授权

US06622104B2 Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system 有权
公开(公告)号：US06622104B2
公开(公告)日：2003-09-16
申请号：US09909861
申请日：2001-07-23
申请人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Takashi Yokota
发明人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Takashi Yokota
IPC分类号： G06F1900
CPC分类号： G01K15/005
摘要： A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

9. 发明授权

US06922522B2 Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system 有权
标题翻译：热处理装置，装置的温度测量系统的校准方法和热处理系统
公开(公告)号：US06922522B2
公开(公告)日：2005-07-26
申请号：US10611908
申请日：2003-07-03
申请人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Takashi Yokota
发明人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Takashi Yokota
IPC分类号： G01J5/02 , C23C16/46 , C23C16/52 , F27B5/06 , F27D19/00 , G01J5/00 , G01J5/10 , G01K15/00 , H01L21/205 , H05B1/02
CPC分类号： G01K15/005
摘要： A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.
摘要翻译：一种热处理设备，具有设置有温度估计器（110）的控制器（100），用于通过温度传感器（Sin，Sout）和温度校准器（120）的检测信号来估计晶片的温度，晶圆。为了校准温度，使用存储在偏移表（122）中的偏移值。基于在实验热处理工艺中形成的膜的膜厚与工艺温度之间的关系来确定偏移值。

10. 发明申请

US20060116337A1 Use of glycyrrhizin and its derivatives as MCP-1 production inhibitors 审中-公开
标题翻译：甘草甜及其衍生物作为MCP-1生产抑制剂的使用
公开(公告)号：US20060116337A1
公开(公告)日：2006-06-01
申请号：US11265328
申请日：2005-11-01
申请人： Fujio Suzuki , Makiko Kobayashi , Tokuichiro Utsunomiya , Hiroatsu Matsumoto , Midori Takeda , Shigemi Iwata
发明人： Fujio Suzuki , Makiko Kobayashi , Tokuichiro Utsunomiya , Hiroatsu Matsumoto , Midori Takeda , Shigemi Iwata
IPC分类号： A61K31/704 , A61K31/235
CPC分类号： A61K31/473 , A61K31/57 , A61K31/704 , A61K31/7052
摘要： The object of the present invention is to provide the use of glycyrrhizin and its derivatives for inhibition of MCP-1 production. The present invention discloses an MCP-1 production inhibition method and pharmaceutical composition for the same comprising administration of glycyrrhizin and its derivatives in an amount effective for said inhibition to mammals in which migration of monocytes or T lymphocytes is increased, or production of IL-10 is increased, and inhibition of said increase is desired, thereby treating or preventing decreases in infection resistance.
摘要翻译：本发明的目的是提供甘草甜素及其衍生物用于抑制MCP-1产生的用途。本发明公开了一种MCP-1产生抑制方法及其药物组合物，其含有对所述抑制单核细胞或T淋巴细胞迁移的哺乳动物有效量的甘草甜素及其衍生物的给药量，或产生IL-10 并且希望抑制所述增加，从而治疗或防止耐感染性降低。

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