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1. 发明专利

IN2201DE2012A "E-3 IN HALER" 未知
公开(公告)号：IN2201DE2012A
公开(公告)日：2015-09-25
申请号：IN2201DE2012
申请日：2012-07-17
申请人： PRADEEP PANDEY
发明人： PRADEEP PANDEY
IPC分类号： A61B20060101
摘要： A complete asthmatic inhaler with two MDI medicines in a single body, which is easier to use because of the button system. Medicine will be replaced with new one. No need to throw whole body. It is slimmer and easy to carry. It can be fit in pocket without any hassle. It's used vibrator to well shake the two different me dice.

2. 发明申请

US20070255991A1 MONITORING A THERMAL PROCESSING SYSTEM 有权
标题翻译：监测热处理系统
公开(公告)号：US20070255991A1
公开(公告)日：2007-11-01
申请号：US11278012
申请日：2006-03-30
申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
发明人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
IPC分类号： G01R31/28
CPC分类号： H01L22/20
摘要： A method of monitoring a thermal processing system in real-time using a built-in self test (BIST) table to detect, diagnose and/or predict fault conditions and/or degraded performance. The method includes positioning a plurality of wafers in a processing chamber in the thermal processing system, performing a self test process, determining a real-time transient error from a measured transient response and a baseline transient response determined by a BIST rule stored in the BIST table, and comparing the transient error to operational limits and warning limits established by the BIST rule for the self test process.
摘要翻译：使用内置自检（BIST）表来实时监测热处理系统的方法来检测，诊断和/或预测故障状况和/或降级的性能。该方法包括将多个晶片定位在热处理系统中的处理室中，执行自测试过程，从测量的瞬态响应确定实时瞬态误差，以及由存储在BIST中的BIST规则确定的基线瞬态响应表，并将瞬态误差与BIST规则为自检过程建立的运行极限和警告限制进行比较。

3. 发明申请

US20070233427A1 MONITORING A SINGLE-WAFER PROCESSING SYSTEM 有权
标题翻译：监测单波加工系统
公开(公告)号：US20070233427A1
公开(公告)日：2007-10-04
申请号：US11456020
申请日：2006-07-06
申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
发明人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
IPC分类号： G06F19/00 , B05C11/00 , G21C17/00 , H01L21/306
CPC分类号： G05B19/41875 , C23C16/52 , G05B23/0254 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a single-wafer processing system in real-time using low-pressure based modeling techniques that include processing a wafer in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种使用基于低压的建模技术来实时监测单晶片处理系统的方法，其包括在处理室中处理晶片; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

4. 发明申请

US20060241891A1 Wafer curvature estimation, monitoring, and compensation 失效
标题翻译：晶圆曲率估计，监测和补偿
公开(公告)号：US20060241891A1
公开(公告)日：2006-10-26
申请号：US11094715
申请日：2005-03-30
申请人： Sanjeev Kaushal , Kenji Sugishima , Pradeep Pandey
发明人： Sanjeev Kaushal , Kenji Sugishima , Pradeep Pandey
IPC分类号： G06F15/00
CPC分类号： H01L21/67248 , H01L21/67288 , H01L22/12
摘要： A method of determining wafer curvature in real-time is presented. The method includes establishing a first temperature profile for a hotplate surface, where the hotplate surface is divided into a plurality of temperature control zones. The method further includes positioning a wafer at a first height above the hotplate surface and determining a second temperature profile for the hotplate surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model of a processing system is presented and wafer curvature can be incorporated into the dynamic model.
摘要翻译：提出了一种实时确定晶片曲率的方法。该方法包括建立热板表面的第一温度曲线，其中将热板表面分成多个温度控制区。该方法还包括将晶片定位在加热板表面上方的第一高度处，并确定用于加热板表面的第二温度分布。然后通过使用第二温度分布来确定晶片曲率。此外，呈现处理系统的动态模型，并且可以将晶片曲率并入到动态模型中。

5. 发明申请

US20060165890A1 Method and apparatus for monolayer deposition (MLD) 有权
标题翻译：单层沉积方法和装置（MLD）
公开(公告)号：US20060165890A1
公开(公告)日：2006-07-27
申请号：US11043199
申请日：2005-01-26
申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
发明人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
IPC分类号： C23C16/00
CPC分类号： C23C16/45527 , C23C16/52
摘要： An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the MLD processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors.
摘要翻译：提出了一种包括多变量控制器的自适应实时热处理系统。该方法包括创建MLD处理系统的动态模型，并将虚拟传感器并入动态模型中。该方法包括使用包括智能设定点，动态模型和/或虚拟传感器的过程配方。

6. 发明授权

US06803548B2 Batch-type heat treatment apparatus and control method for the batch-type heat treatment apparatus 有权
标题翻译：批式热处理装置和批式热处理装置的控制方法
公开(公告)号：US06803548B2
公开(公告)日：2004-10-12
申请号：US09950876
申请日：2001-09-13
申请人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara , Sunil Shah , Pradeep Pandey , Mark Erickson
发明人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara , Sunil Shah , Pradeep Pandey , Mark Erickson
IPC分类号： H05B102
CPC分类号： H01L21/67109 , C23C16/46 , C23C16/52 , C30B31/18 , F27D19/00 , F27D21/0014 , G05D23/1932 , H01L21/67248
摘要： A heat treatment apparatus for making a heat treatment while estimating temperatures of objects-to-be-processed that can estimate correct temperatures of the objects-to-be-processed. A reaction tube includes heaters and temperature sensors, and receives a wafer boat. A controller estimates temperatures of wafers and temperatures of the temperature sensors in zones in the reaction tube corresponding to the heaters by using the temperature sensors and electric powers of the heaters. Based on relationships between estimated temperatures of the temperature sensors and really metered temperatures, functions expressing the relationships between the estimated temperatures and the really metered temperatures are given for the respective zones. The functions are substituted by the estimated wafer temperatures to correct the estimated wafer temperatures. Electric powers to be fed to the respective heaters are respectively controlled so that the corrected wafer temperatures are converged to target temperature trajectories.
摘要翻译：一种用于进行热处理的热处理装置，同时估计能够估计被处理物体的正确温度的待处理物体的温度。反应管包括加热器和温度传感器，并接收晶片舟。控制器通过使用温度传感器和加热器的电力来估计对应于加热器的反应管中的晶片温度和温度传感器的温度。基于温度传感器的估计温度和真正计量温度之间的关系，给出了各个区域表达估计温度和真实计量温度之间的关系的函数。功能由估计的晶片温度代替，以校正估计的晶片温度。分别控制供给到各个加热器的电力，使得校正的晶片温度收敛到目标温度轨迹。

7. 发明授权

US06730885B2 Batch type heat treatment system, method for controlling same, and heat treatment method 有权
标题翻译：批式热处理系统，其控制方法和热处理方法
公开(公告)号：US06730885B2
公开(公告)日：2004-05-04
申请号：US09897908
申请日：2001-07-05
申请人： Fujio Suzuki , Wenling Wang , Koichi Sakamoto , Moyuru Yasuhara , Sunil Shah , Pradeep Pandey
发明人： Fujio Suzuki , Wenling Wang , Koichi Sakamoto , Moyuru Yasuhara , Sunil Shah , Pradeep Pandey
IPC分类号： H05B302
CPC分类号： H01L21/67248 , H01L21/67109
摘要： There is provided a batch type heat treatment system, control method and heat treatment method capable of appropriately coping with a multi-product small-lot production. A reaction tube 2 comprises a plurality of heaters 31 through 35 and a plurality of temperature sensors, and houses therein a wafer boat 23. A control part 100 stores therein many mathematical models for estimating (calculating) the temperature of wafers W in the reaction tube 2, in accordance with the number and arranged position of the wafers W mounted on the wafer boat 23, and many target temperature trajectories. If the wafer boat 23 is loaded in the reaction tube 2, a mathematical model and a target temperature trajectory corresponding to the number and arranged position of the mounted wafers W are read. If a deposition process is started, the output of a temperature sensor S and the model are used for estimating the temperature of the wafers W in the reaction tube 2, and the powers to be supplied to the heaters 31 through 35 are separately controlled so that the estimated temperature approaches the target temperature trajectory.
摘要翻译：提供能够适当应对多产品小批量生产的批式热处理系统，控制方法和热处理方法。反应管2包括多个加热器31至35和多个温度传感器，以及在其中容纳晶片舟23.控制部分100存储许多用于根据安装在晶片舟23上的晶片W的数量和布置位置来估计（计算）反应管2中的晶片W的温度的数学模型，以及许多目标温度轨迹。如果晶片舟23装载在反应管2中，则读取与安装的晶片W的数量和排列位置对应的数学模型和目标温度轨迹。如果开始沉积工艺，则使用温度传感器S和模型的输出来估计反应管2中的晶片W的温度，并且分别控制供给到加热器31至35的功率，使得估计的温度接近目标温度轨迹。

8. 发明授权

US5517594A Thermal reactor optimization 失效
标题翻译：热反应器优化
公开(公告)号：US5517594A
公开(公告)日：1996-05-14
申请号：US324416
申请日：1994-10-17
申请人： Sunil C. Shah , Pradeep Pandey
发明人： Sunil C. Shah , Pradeep Pandey
IPC分类号： C23C16/52 , H01L21/00 , H05B1/02 , C23C14/54
CPC分类号： H01L21/67248 , C23C16/52
摘要： A system for controlling a thermal reactor is disclosed that characterizes the thermal reactor with a reactor model that indicates behavior of the thermal reactor and of a load contained in the thermal reactor and that accounts for interaction among a set of heating zones of the thermal reactor. An online reactor model is then determined that estimates the thermal behavior of the load based upon an online input power to the thermal reactor and upon an online temperature indication from the thermal reactor. A time varying temperature and reactant flow recipe is determined that minimizes end of run parameters on the load. A multi-variable controller is employed to minimize temperature deviations of the load from a predetermined temperature recipe or time varying trajectory.
摘要翻译：公开了一种用于控制热反应器的系统，其特征在于用反应器模型表征热反应器，该反应器模型指示热反应器和包含在热反应器中的负载的行为，并且考虑到热反应器的一组加热区之间的相互作用。然后确定在线反应器模型，其基于来自热反应堆的在线输入功率以及来自热反应器的在线温度指示来估计负载的热性能。确定时间变化的温度和反应物流动配方，其最小化负载上的运行参数的结束。使用多变量控制器来使负载与预定温度配方或时变轨迹的温度偏差最小化。

9. 发明授权

US07519885B2 Monitoring a monolayer deposition (MLD) system using a built-in self test (BIST) table 失效
标题翻译：使用内置自检（BIST）表监测单层沉积（MLD）系统
公开(公告)号：US07519885B2
公开(公告)日：2009-04-14
申请号：US11278382
申请日：2006-03-31
申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
发明人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
IPC分类号： G06F11/00 , G11C29/00 , G06F11/30 , G06F19/00 , G01R31/26
CPC分类号： G05B19/41875 , C23C16/45546 , C23C16/52 , G05B23/0254 , G05B2219/1112 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , G05B2223/02 , Y02P90/14 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a processing system in real-time using low-pressure based modeling techniques that include processing one or more of wafers in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种使用基于低压的建模技术实时监控处理系统的方法，所述技术包括处理处理室中的一个或多个晶片; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

10. 发明授权

US07459175B2 Method for monolayer deposition 有权
标题翻译：单层沉积方法
公开(公告)号：US07459175B2
公开(公告)日：2008-12-02
申请号：US11043459
申请日：2005-01-26
申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
发明人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
IPC分类号： C23C16/52 , C23C14/22 , C23C16/44 , H01L21/66
CPC分类号： C23C16/45527 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/52
摘要： An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the MLD processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors.
摘要翻译：提出了一种包括多变量控制器的自适应实时热处理系统。该方法包括创建MLD处理系统的动态模型，并将虚拟传感器并入动态模型中。该方法包括使用包括智能设定点，动态模型和/或虚拟传感器的过程配方。

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