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1. 发明专利

JP2011233742A Semiconductor carrier lifetime measuring apparatus and method therefor 有权
标题翻译：半导体载体寿命测量装置及其方法
公开(公告)号：JP2011233742A
公开(公告)日：2011-11-17
申请号：JP2010103331
申请日：2010-04-28
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAMATSU HIROYUKI , HAYASHI KAZUSHI , SAKOTA HISAKAZU , INUI MASAHIRO , FUKUMOTO YOSHITO , SUMIE SHINGO
IPC分类号： H01L21/66 , G01N22/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor carrier lifetime measuring apparatus and a method therefor, by which a lifetime of carriers can be measured with good precision.SOLUTION: A semiconductor carrier lifetime measuring apparatus Xa includes: a light-irradiation unit 1 for irradiating first and second different regions in a semiconductor as a measurement sample SW with first and second lights having different wavelengths; a measurement wave input/output unit 2 for irradiating the first and second regions with predetermined measurement waves respectively, and for using a first reflected or transmitted wave and a second reflected or transmitted wave with no changes to generate a difference-measurement wave which is a difference between the first reflected or transmitted wave of the measurement wave from the first region and the second reflected or transmitted wave of the measurement wave from the second region; a detection unit 3 for detecting the difference-measurement wave of the measurement wave input/output unit 2; and a calculation-control unit 4 for determining a carrier lifetime in the semiconductor of the measurement sample SW based on a result of detection by the detection unit 3.
摘要翻译：要解决的问题：提供一种可以以高精度测量载流子寿命的半导体载体寿命测量装置及其方法。解决方案：半导体载体寿命测量装置Xa包括：光照射单元1，用于照射具有不同波长的第一和第二光的半导体中的第一和第二不同区域作为测量样品SW; 用于分别用预定测量波照射第一和第二区域的测量波输入/输出单元2，并且用于使用第一反射或透射波和不改变的第二反射或发射波，以产生差分测量波，该差测量波是来自第一区域的测量波的第一反射或发射波与来自第二区域的测量波的第二反射或透射波之间的差; 用于检测测量波输入/输出单元2的差测量波的检测单元3; 以及计算控制单元4，用于基于检测单元3的检测结果来确定测量样本SW的半导体中的载流子寿命。版权所有：（C）2012，JPO＆INPIT

2. 发明专利

JP2009212341A Ion implantation amount measuring apparatus 有权
标题翻译：离子植入量测量装置
公开(公告)号：JP2009212341A
公开(公告)日：2009-09-17
申请号：JP2008054628
申请日：2008-03-05
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAMATSU HIROYUKI , SAKOTA HISAKAZU , OSHIMA FUTOSHI
IPC分类号： H01L21/265 , H01J37/317 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an ion implantation amount measuring apparatus capable of highly accurately measuring an ion implantation amount in a semiconductor subjected to ion implantation into a surface layer by a comparatively simple constitution without damaging the semiconductor. SOLUTION: In the ion implantation amount measuring apparatus, a microwave is applied from a microwave oscillator 1 to a sample 6 which is an ion implantation object, excitation light having energy of which the penetration length into the sample 6 is shorter than the ion implantation depth in the sample 6 and is above a band gap of the sample 6 is applied from an excitation laser light source 12 to the sample 6, the strength of a reflected microwave from the sample 6 which is changed by the application of the excitation light is detected by a mixer 10, an index value of lifetime of a light excitation carrier is detected from a signal of the detected strength by a lock-in amplifier 15, and an ion implantation amount is calculated from the index value by a computer 16. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种离子注入量测量装置，其能够通过相对简单的结构将离子注入的半导体中的离子注入量高度精确地测量到表面层中而不损坏半导体。解决方案：在离子注入量测量装置中，微波从微波振荡器1施加到作为离子注入对象的样品6，具有能够进入样品6的穿透长度的能量的激发光短于样品6中的离子注入深度和样品6的带隙高于激发激光光源12至样品6，来自样品6的反射微波的强度通过施加激发而改变通过混频器10检测光，通过锁定放大器15从检测到的强度的信号中检测光激励载波的寿命的指标值，并且根据计算机16的指标值计算离子注入量版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009042114A Apparatus and method for extracting light-sectioning line 有权
标题翻译：提取分光线的装置和方法
公开(公告)号：JP2009042114A
公开(公告)日：2009-02-26
申请号：JP2007208353
申请日：2007-08-09
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TAKAHASHI EIJI , SAKOTA HISAKAZU , MORIMOTO TSUTOMU
IPC分类号： G01B11/24 , B29D30/00 , G06T1/00
摘要： PROBLEM TO BE SOLVED: To perform the processing of inputting luminance information of pick-up images including images of line light irradiated to the surface of a moving object to be measured and extracting light-sectioning lines on the basis of the inputted information at high speed.
SOLUTION: The processing of parallel input of luminance information of a plurality of pixel blocks, which is acquired by dividing one horizontal line of a pixel group, by a circuit 610 for every pixel block; a series of a plurality of stages of the processing, by each of circuits 611a-611d, of a comparison of every two items of luminance information among all the luminance information recorded in one previous stage on the side of its previous stage and the processing of the recording of luminance information of one having higher luminance and its coordinate information; and the processing of a comparison of the luminance information recorded by the circuits 612 in its final stage and luminance information recorded last time and the recording of maximum-luminance information and coordinate information of one having higher luminance are parallelly executed in synchronization with prescribe clock signals CLK. The maximum-luminance information and its coordinate information is sequentially and additionally written in an SDRAM 62 in synchronization with horizontal synchronizing signals Hsync, and the maximum information is initialized in synchronization with the horizontal synchronizing signals.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：执行输入包括照射到待测移动物体的表面的线光的图像的拾取图像的亮度信息的处理，并且基于输入的信息提取光分割线高速解决方案：通过电路610对每个像素块对由像素组划分一条水平线而获得的多个像素块的亮度信息的并行输入进行处理; 通过电路611a-611d中的每个处理的多个级的一系列处理在前一级的一个前一级中记录的所有亮度信息中的每两个亮度信息的比较，以及处理具有较高亮度的亮度信息及其坐标信息的记录; 并且与规定的时钟信号同步地并行地执行由最终级中的电路612记录的亮度信息和上次记录的亮度信息以及最大亮度信息的记录和具有较高亮度的一个的坐标信息的比较的处理 CLK。与水平同步信号Hsync同步地将最大亮度信息及其坐标信息顺序地和附加地写入SDRAM 62，并且与水平同步信号同步地初始化最大信息。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007327812A Diameter measuring method, and diameter measuring device 审中-公开
标题翻译：直径测量方法和直径测量装置
公开(公告)号：JP2007327812A
公开(公告)日：2007-12-20
申请号：JP2006158254
申请日：2006-06-07
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： MORIMOTO TSUTOMU , SAKOTA HISAKAZU
IPC分类号： G01B11/08
摘要： PROBLEM TO BE SOLVED: To provide a method of measuring a diameter of a circular diskcapable of measuring the diameter by calculation by eliminating the effect of gravity in the measurement of circular disk such as a wafer etc., capable of measuring the true diameter in no gravity state, by correcting the essentially provided warpage even in the state of no external force into a flat face state a remaining warp of the circular disk provided even in a state of no external force into the correct circular flat disk is obtained by calculation.
SOLUTION: The diameter measurement method for calculating under the no gravity state is provided as follows: the reference deviation of the diameter of the reference circular disk approximated by the actual measurement disk being the measurement object supported in a prescribed state is previously calculated, then the diameter of the actual measurement circular disk is measured in the same prescribed supporting state, and the actual measurement diameter in no gravity state is calculated by correcting the actual measurement diameter with the reference deviation amount.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过消除在诸如晶片等的圆盘的测量中的重力的影响而计算出的测量直径的圆盘的直径的方法，其能够测量真实直径在无重力状态下，通过即使在没有外力的状态下校正基本上提供的翘曲成平面状态，即使在没有外力的状态下设置在圆形平盘中的圆盘的剩余翘曲也可以通过计算。
解决方案：在无重力状态下计算的直径测量方法如下：预先计算由作为在规定状态下支撑的测量对象的实际测量盘近似的参考圆盘的直径的参考偏差然后在相同的规定支撑状态下测量实际测量圆盘的直径，并且通过用参考偏差量校正实际测量直径来计算不重力状态下的实际测量直径。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007147288A Shape-measuring apparatus 有权
标题翻译：形状测量装置
公开(公告)号：JP2007147288A
公开(公告)日：2007-06-14
申请号：JP2005338015
申请日：2005-11-24
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： MORIMOTO TSUTOMU , TAKAHASHI EIJI , SAKOTA HISAKAZU , TAKAMATSU HIROYUKI
IPC分类号： G01B11/24
摘要： PROBLEM TO BE SOLVED: To improve accuracy in measuring the shapes of the edge parts of objects to be measured, in a shape-measuring apparatus for noncontact measurement of edge parts by means of an optical technique.
SOLUTION: The shape of an edge part 11 of a wafer 10 is measured on the basis of reflected light reflected from the edge part 11 in the shape measuring apparatus X. An optical system 21 is moved over the wafer 10 in the directions of arrows R1 (R6, R3) shown in Fig. by a moving stage 22. Displacement detection sensors 20a (20b, 20c) detect a set of positional coordinates of a light-transmitting lens 26, at which the quantity of light of reflected light incident onto a photodiode 28 becomes maximum at each position of movement. The set of positional coordinates thus indicate the detailed shape of the wafer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过光学技术在用于非接触测量边缘部分的形状测量装置中提高测量对象的边缘部分的形状的精度。解决方案：基于在形状测量装置X中从边缘部分11反射的反射光来测量晶片10的边缘部分11的形状。光学系统21沿晶片10的方向移动的箭头R1（R6，R3）。位移检测传感器20a（20b，20c）检测入射到光电二极管28上的反射光的光量在每个移动位置处变得最大的透光透镜26的位置坐标。因此，该位置坐标表示晶片的详细形状。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2017115198A 還元鉄の製造装置及び方法有权
公开(公告)号：JP2017115198A
公开(公告)日：2017-06-29
申请号：JP2015250919
申请日：2015-12-24
申请人：株式会社神戸製鋼所 , Kobe Steel Ltd
发明人： TSUTSUMI HIROBUMI , SAKOTA HISAKAZU
IPC分类号： C21B13/10 , F27D21/00 , F27D21/04
摘要：【課題】回転床式還元炉を備えた還元鉄の製造装置及び当該還元炉を用いた製造方法において、その運転効率の向上が可能なものを、提供する。【解決手段】製造装置は、回転方向に移動可能な炉床18を含む還元炉10と、装入位置で炉床18への還元鉄原料2の装入を行う原料装入装置21と、排出位置で炉床18上の還元鉄を排出する排出装置14と、排出位置の下流側でかつ装入位置の上流側に設定された監視対象領域Amtにおける炉床18の表面の状態を監視するための監視装置と、を備える。監視装置は、表面状態に関する情報を検出する検出部と、その情報を蓄積して炉床18の全周にわたる表面状態についての監視用情報を作成する監視用情報作成部と、作成された監視用情報を出力する出力部と、を有する。【選択図】図1

7. 发明专利

JP2014131815A Ring material rolling method 有权
标题翻译：环材料滚压方法
公开(公告)号：JP2014131815A
公开(公告)日：2014-07-17
申请号：JP2013045201
申请日：2013-03-07
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TAKI YASUHISA , MAEDA YASUSHI , TANAKA TOMOFUMI , SAKOTA HISAKAZU , AOTO RYOHEI
IPC分类号： B21B5/00 , B21B3/00 , B21C51/00
摘要： PROBLEM TO BE SOLVED: To provide a ring material rolling method capable of depressing stably without floating and generating overheat and deformation to a ring material.SOLUTION: Shaft centers of a king roll 2 and a mandrel roll 3 are disposed in a straight manner in a vertical direction, and a thickness in a radial direction of a ring material 1 is depressed by the king roll 2 and the mandrel roll 3 so as to roll the ring material 1. By posture control means for controlling roll caliber tool in/out posture of the ring material 1, floating of the ring material 1 is suppressed. In addition, an inclination α of the ring material 1 in both in/out sides 1a, 1b of the roll caliber tool to a plane surface P is controlled to in a range of -20°≤α≤20°.
摘要翻译：要解决的问题：提供能够稳定地压下而不会浮起并产生环材料过热和变形的环材轧制方法。解决方案：主辊2和心轴辊3的轴中心以直线方式设置在垂直方向和环形材料1的径向厚度被主辊2和心轴辊3压下以使环材1滚动。通过姿势控制装置，用于控制辊口径工具的进/出姿势环材料1浮起的环材1被抑制。此外，将环形材料1在辊口径工具的两个内侧/外侧1a，1b的平面P上的倾斜度α控制在-20°≤α≤20°的范围内。

8. 发明专利

JP2012083120A Evaluation device and method of crystallinity of semiconductor thin film 审中-公开
标题翻译：评价装置和半导体薄膜的结晶方法
公开(公告)号：JP2012083120A
公开(公告)日：2012-04-26
申请号：JP2010227183
申请日：2010-10-07
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： SAKOTA HISAKAZU , TAKAMATSU HIROYUKI , OSIMA FUTOSHI
IPC分类号： G01N21/33 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a nondestructive evaluation device and method of crystallinity of a semiconductor thin film, capable of evaluating crystallinity of a semiconductor layer formed on a substrate through a conductive layer of a measuring object, without controlling measurement environment.SOLUTION: A measuring object WA has a semiconductor layer LA3 formed on a substrate LA1 through a conductive layer LA2 having conductivity. An evaluation device Da of crystallinity of a semiconductor thin film comprises: a measurement part 1 which measures reflected beams of measuring beams reflected from the measuring object WA which is irradiated with measuring beams having a wavelength range with a penetration length shorter than the thickness of the semiconductor layer LA3; and a calculation part 2 which obtains information of predetermined peaks of a reflection spectrum based on output of the measurement part 1, and obtains an evaluation index which represents evaluation of crystallinity of the semiconductor layer LA3 based on the obtained information.
摘要翻译：解决的问题：提供半导体薄膜的非破坏性评价装置和结晶化方法，其能够通过测量对象的导电层来评估在基板上形成的半导体层的结晶性，而无需控制测量环境。解决方案：测量对象WA具有通过具有导电性的导电层LA2在衬底LA1上形成的半导体层LA3。半导体薄膜的结晶度的评价装置Da包括：测量部件1，其测量从测量对象WA反射的测量光束的反射光束，其被测量光束照射，所述测量光束具有的穿透长度短于半导体层LA3; 以及计算部分2，其基于测量部分1的输出获得反射光谱的预定峰值的信息，并且基于获得的信息获得表示半导体层LA3的结晶度的评估的评价指标。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010043906A Crystallinity evaluating device and crystallinity evaluation method of semiconductor thin film 有权
标题翻译：晶体厚度评估装置和半导体薄膜的结晶评估方法
公开(公告)号：JP2010043906A
公开(公告)日：2010-02-25
申请号：JP2008207084
申请日：2008-08-11
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： SAKOTA HISAKAZU , TAKAMATSU HIROYUKI , OSHIMA FUTOSHI
IPC分类号： G01N22/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To evaluate crystallinity of a semiconductor thin film with accuracy, regardless of the fluctuations of the thickness and dielectric constant of a base material.
SOLUTION: This device is equipped with: an excitation light source 6 for irradiating excitation light onto the surface of a p-Si semiconductor thin film 3; a microwave radiating part 7 for irradiating a microwave to the p-Si semiconductor thin film 3; a detection part 8, capable of detecting intensity of a direct-current component fluctuating due to the dielectric constant and the thickness of a glass substrate 2, and the intensity of an alternating-current component, fluctuating due to the dielectric constant, the thickness and generation of a carrier, in the reflected waves of the microwave from the p-Si semiconductor thin film 3; and a computer 9 for storing index data, showing crystallinity of the p-Si semiconductor thin film by using as parameters, the intensity of the direct-current component measured beforehand relative to a sample 4 set so as to have a known dielectric constant, thickness and crystallinity, and a peak value of the intensity of the alternating-current component, and evaluating the crystallinity of the p-Si semiconductor thin film 3, based on the peak values of the intensity of the direct-current component and the intensity of the alternating-current component detected by the detection part 8 and the index data.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：无论基材的厚度和介电常数的波动如何，都能准确地评价半导体薄膜的结晶度。解决方案：该装置配备有用于将激发光照射到p-Si半导体薄膜3的表面上的激发光源6; 用于向p-Si半导体薄膜3照射微波的微波辐射部7; 检测部分8，其能够检测由于介电常数和玻璃基板2的厚度而波动的直流分量的强度，以及由于介电常数而引起的交流分量的强度，厚度和在来自p-Si半导体薄膜3的微波的反射波中产生载流子; 以及计算机9，用于存储索引数据，通过使用参数来显示p-Si半导体薄膜的结晶度，相对于样品4预先测量的直流分量的强度为已知的介电常数，厚度和结晶度，以及交流分量的强度的峰值，并且基于直流分量的强度和强度的峰值来评价p-Si半导体薄膜3的结晶度由检测部分8检测的交流分量和索引数据。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010038697A Device and method for evaluating crystallinity of silicon semiconductor thin film 有权
标题翻译：用于评估硅半导体薄膜的晶体结构的装置和方法
公开(公告)号：JP2010038697A
公开(公告)日：2010-02-18
申请号：JP2008201099
申请日：2008-08-04
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , Nihon Univ , 学校法人日本大学 , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： SHIMIZU HIROBUMI , IKEDA MASANORI , TAKAMATSU HIROYUKI , SAKOTA HISAKAZU , OSHIMA FUTOSHI
IPC分类号： G01N27/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To quickly and accurately obtain evaluation results of the crystallinity of a silicon semiconductor thin film without destroying a sample.
SOLUTION: The device for evaluating the crystallinity of a silicon semiconductor thin film formed on a substrate includes: a LED1 emitting the exciting light 14 for exciting carriers to the predetermined region of the surface of the silicon semiconductor thin film; a transparent electrode 6 detecting the surface light voltage at the predetermined region to output the detection signal; and a signal processing device 11 making the data for evaluating the crystallinity of the silicon semiconductor thin film by processing the detection signal.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：快速且准确地获得硅半导体薄膜的结晶度的评估结果，而不破坏样品。解决方案：用于评估形成在衬底上的硅半导体薄膜的结晶度的装置包括：LED1，发射用于激励载流子的激发光14到硅半导体薄膜的表面的预定区域; 透明电极6，检测预定区域的表面光电压，以输出检测信号; 以及信号处理装置11，其通过处理检测信号来制作用于评估硅半导体薄膜的结晶度的数据。版权所有（C）2010，JPO＆INPIT

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