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1. 发明专利

JP2011233742A Semiconductor carrier lifetime measuring apparatus and method therefor 有权
标题翻译：半导体载体寿命测量装置及其方法
公开(公告)号：JP2011233742A
公开(公告)日：2011-11-17
申请号：JP2010103331
申请日：2010-04-28
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAMATSU HIROYUKI , HAYASHI KAZUSHI , SAKOTA HISAKAZU , INUI MASAHIRO , FUKUMOTO YOSHITO , SUMIE SHINGO
IPC分类号： H01L21/66 , G01N22/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor carrier lifetime measuring apparatus and a method therefor, by which a lifetime of carriers can be measured with good precision.SOLUTION: A semiconductor carrier lifetime measuring apparatus Xa includes: a light-irradiation unit 1 for irradiating first and second different regions in a semiconductor as a measurement sample SW with first and second lights having different wavelengths; a measurement wave input/output unit 2 for irradiating the first and second regions with predetermined measurement waves respectively, and for using a first reflected or transmitted wave and a second reflected or transmitted wave with no changes to generate a difference-measurement wave which is a difference between the first reflected or transmitted wave of the measurement wave from the first region and the second reflected or transmitted wave of the measurement wave from the second region; a detection unit 3 for detecting the difference-measurement wave of the measurement wave input/output unit 2; and a calculation-control unit 4 for determining a carrier lifetime in the semiconductor of the measurement sample SW based on a result of detection by the detection unit 3.
摘要翻译：要解决的问题：提供一种可以以高精度测量载流子寿命的半导体载体寿命测量装置及其方法。解决方案：半导体载体寿命测量装置Xa包括：光照射单元1，用于照射具有不同波长的第一和第二光的半导体中的第一和第二不同区域作为测量样品SW; 用于分别用预定测量波照射第一和第二区域的测量波输入/输出单元2，并且用于使用第一反射或透射波和不改变的第二反射或发射波，以产生差分测量波，该差测量波是来自第一区域的测量波的第一反射或发射波与来自第二区域的测量波的第二反射或透射波之间的差; 用于检测测量波输入/输出单元2的差测量波的检测单元3; 以及计算控制单元4，用于基于检测单元3的检测结果来确定测量样本SW的半导体中的载流子寿命。版权所有：（C）2012，JPO＆INPIT

2. 发明专利

JP2011082312A Device and method for measuring semiconductor carrier life 有权
标题翻译：用于测量半导体载体寿命的装置和方法
公开(公告)号：JP2011082312A
公开(公告)日：2011-04-21
申请号：JP2009232880
申请日：2009-10-06
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： HAYASHI KAZUYUKI , TAKAMATSU HIROYUKI , FUKUMOTO YOSHITO , SUMINOE SHINGO
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor carrier life measuring device and method allowing measurement in a production line, and allowing more accurate measurement of the carrier life with no need of preliminary pretreatment and assumption of a diffusion coefficient as conventionally performed. SOLUTION: The semiconductor carrier life measuring device A utilizes a microwave photo-conduction attenuating method. When a measured sample X of a semiconductor is in a first surface recombination velocity state, the measured sample X is irradiated with at least two kinds of lights having mutually different wavelengths by a light application section 1 and is irradiated with measuring waves by a measuring wave input/output section 2 to obtain a first difference in a time-based relative change of reflected waves or transmitted waves detected by a detection section 3, a second difference in a second surface recombination velocity state is obtained like the first difference, and the carrier life of the measured sample X is obtained based on the first difference and the second difference. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体载体寿命测量装置和方法，其允许在生产线中进行测量，并且允许更准确地测量载体寿命，而不需要预先预处理和假定如以往进行的扩散系数。解决方案：半导体载体寿命测量装置A利用微波光导衰减方法。当半导体的测量样本X处于第一表面复合速度状态时，通过光施加部分1用至少两种具有相互不同波长的光照射测量样品X，并通过测量波照射测量波输入/输出部分2以获得由检测部分3检测的反射波或透射波的基于时间的相对变化的第一差异，获得与第一差异相似的第二表面复合速度状态的第二差异，并且载体基于第一差异和第二差异获得测量样本X的寿命。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009109289A Near field probe, high frequency dielectric constant measuring device equipped with the near field probe, and replacement component of near field probe 审中-公开
标题翻译：近场探头，配有近场探测器的高频电介质恒定测量装置，以及近场探头的替代部件
公开(公告)号：JP2009109289A
公开(公告)日：2009-05-21
申请号：JP2007280658
申请日：2007-10-29
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： INOUE KOJI , TAKAMATSU HIROYUKI , FUKUMOTO YOSHITO , MORIMOTO HIROYUKI , UENO KAZUYA
IPC分类号： G01R27/26 , G01N22/00
摘要： PROBLEM TO BE SOLVED: To provide a near field probe which can attain a high resolution, while maintaining a near field having a sufficient strength for measurement, a high frequency dielectric constant measuring device equipped with this probe and a replacement component of the near field probe.
SOLUTION: A minute shaft part 121 includes an outer peripheral surface 21a of which the diameter is smaller than that of an inner conductor 20, and is provided at the tip of the inner conductor 20 so that it projects from the body 22 of the inner conductor along the central axis C. A minute opening 35 which makes an internal space S communicate with the outside along the central axis C, through which the minute shaft part 121 can be inserted and of which the diameter is smaller than a wavelength of the resonance frequency of resonance, is provided on the tip side of an outer conductor 30. The relative positions of the minute shaft part 121 and the minute opening 35 are set so that the minute shaft part 121 is inserted through the minute opening 35 without contacting with the outer conductor 30 and that the tip of the shaft part is put on the same plane as the outer surface of the outer conductor 30 or slightly projects outward from the outer surface.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够获得高分辨率的近场探针，同时保持具有足够的测量强度的近场，配备有该探针的高频介电常数测量装置和近场探头解决方案：微小轴部分121包括直径小于内导体20的直径的外周表面21a，并且设置在内导体20的尖端处，使得其从主体22突出沿着中心轴线C的内部导体。使内部空间S沿着中心轴线C与外部连通的微小开口35，微小轴部121可以穿过该中心轴线C，并且其直径小于在外部导体30的末端侧设置共振的共振频率。微小轴部121和微小开口35的相对位置被设定为使得微小轴部121不通过微小开口部35插入外导体30和轴部的顶端与外导体30的外表面放置在同一平面上，或者从外表面向外突出。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2012069896A Composite winding element and transformer, transformation system using the same, and composite winding element for noise cut filter 有权
标题翻译：复合绕组元件和变压器，使用其的变压系统和用于噪声切割过滤器的复合绕组元件
公开(公告)号：JP2012069896A
公开(公告)日：2012-04-05
申请号：JP2010235067
申请日：2010-10-20
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： HASHIMOTO HIROSHI , MIYAZAKI TAKAYOSHI , ZAITSU TAKASHI , FUKUMOTO YOSHITO , GOTO YUICHIRO , NOGI TOSHIHIRO , INOUE KENICHI , MITANI HIROYUKI , INOUE KOJI
IPC分类号： H01F30/00 , H01F37/00
CPC分类号： H01F27/2847 , H01F17/04 , H01F27/2871 , H01F2027/2857 , H02M1/126
摘要： PROBLEM TO BE SOLVED: To provide a composite winding element having a structure that facilitates manufacturing compared with prior art, and to provide a transformer, a transformation system using the same, and a composite winding element for noise cut filters.SOLUTION: A transformer Tra in a composite winding element comprises a plurality of coils 1, and a magnetic coupling member 2a for coupling the plurality of coils 1 magnetically. The plurality of coils 1 are formed, respectively, by winding a belt-like conductor member so that the width direction thereof extends in the axial direction of the coil, and contained in the magnetic coupling member 2a.
摘要翻译：要解决的问题：提供一种具有与现有技术相比有利于制造的结构的复合绕组元件，并提供变压器，使用该变压器的变换系统和用于噪声截止滤波器的复合绕组元件。解决方案：复合绕组元件中的变压器Tra包括多个线圈1和用于磁耦合多个线圈1的磁耦合部件2a。多个线圈1分别通过缠绕带状导体部件而形成，使得其宽度方向在线圈的轴向方向上延伸并容纳在磁性耦合部件2a中。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011035219A Composite heat sink 有权
标题翻译：复合散热器
公开(公告)号：JP2011035219A
公开(公告)日：2011-02-17
申请号：JP2009181181
申请日：2009-08-04
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： INOUE KOJI , FUKUMOTO YOSHITO , AMANAKA MASAHITO , TSUJI TOSHIYUKI , INOUE KENICHI
IPC分类号： H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a structure that suppresses mountain-shaped distortion of a metal heat sink joined to an insulating heat sink. SOLUTION: The composite heat sink is used to dissipate heat of an electronic component, and includes an insulating substrate and a first metal plate 4. The first metal plate 4 is joined to the insulating substrate, and has a larger coefficient of thermal expansion than the insulating substrate. On a first surface 4s, a plurality of first grooves 41 are linearly formed and on a second surface 4t, a plurality of second grooves 42 are linearly formed. Center line parts of the respective first grooves 41 and center line parts of the respective second grooves 42 are not positioned on the same straight line along a direction (vertical direction D) perpendicular to the first surface 4s. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供抑制与绝缘散热器接合的金属散热器的山形变形的结构。解决方案：复合散热器用于散发电子部件的热量，并且包括绝缘基板和第一金属板4.第一金属板4接合到绝缘基板，并且具有较大的热系数膨胀比绝缘基板。在第一表面4s上，多个第一凹槽41线性地形成，并且在第二表面4t上，多个第二凹槽42线性地形成。各个第一槽41的中心线部分和各个第二槽42的中心线部分不沿垂直于第一表面4s的方向（垂直方向D）定位在相同的直线上。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010025724A Temperature measuring device and method for measuring temperature 有权
标题翻译：温度测量装置及测量温度的方法
公开(公告)号：JP2010025724A
公开(公告)日：2010-02-04
申请号：JP2008186854
申请日：2008-07-18
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： INOUE KOJI , TAKAMATSU HIROYUKI , FUKUMOTO YOSHITO
IPC分类号： G01K11/24 , G01K1/14 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a temperature measuring device that precisely measures temperature of an object to be processed such as a semiconductor wafer to be applied with various processes while avoiding contamination. SOLUTION: An ultrasonic wave is output to a process wafer 1 on a wafer stage 2 and a reference wafer 1x (made of a material the same as that of the process wafer 1) on a reference wafer support section 2x under a stable condition that both are in roughly the same temperature. Characteristic amounts (a resonance frequency, a time period of propagation of an ultrasonic wave, a phase and the like) of a detection signal of the reflected ultrasonic wave are detected, and an adjustment value of a thickness of the process wafer 1 is calculated on the basis of the characteristic amounts. The temperature of the process wafer 1 is calculated on the basis of the characteristic amounts of the detection signal of the reflected ultrasonic wave of the process wafer 1 in the processing, and the adjustment value of the thickness. A relationship between the temperature and a propagation speed of the ultrasonic wave of the process wafer 1 is adjusted on the basis of the detection temperature of the reference wafer 1x under a normal condition and the characteristic amounts. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种温度测量装置，其可以精确地测量待处理物体的温度，例如半导体晶片，以应用各种工艺，同时避免污染。解决方案：将超声波输出到晶片载台2上的处理晶片1和参考晶片1x（由与处理晶片1的材料相同的材料制成）在稳定的基准晶片支撑部分2x上条件是两者都处于大致相同的温度。检测出反射超声波的检测信号的特征量（共振频率，超声波的传播时间，相位等），并且计算处理晶片1的厚度的调整值特征量的基础。根据处理用晶片1的反射超声波的检测信号的特征量和厚度的调整值，算出处理晶片1的温度。基于正常条件下的基准晶片1x的检测温度和特征量，调整处理用晶片1的超声波的温度与传播速度之间的关系。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2008129838A Rfid tag for high temperature 有权
标题翻译： RFID标签用于高温
公开(公告)号：JP2008129838A
公开(公告)日：2008-06-05
申请号：JP2006313859
申请日：2006-11-21
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUKUMOTO YOSHITO , KEGASA MITSUYOSHI , MANABE CHITAKA , TAMURA NAOKI
IPC分类号： G06K19/07 , G06K19/077
摘要： PROBLEM TO BE SOLVED: To provide a RFID tag for high temperature, which is applicable to even an object which may be heated up to a very high temperature. SOLUTION: The RFID tag includes a RFID tag body 14 and a heat insulating member 16 for protecting the RFID tag body. The heat insulating member 16 includes a first heat insulator 20 made of machinable ceramics and a second heat insulator 22 made of porous ceramics having a thermal conductivity lower than that of the first heat insulator. The first heat insulator 20 has a bottom wall part 24 to be attached to an object material and a peripheral wall 26 rising from the bottom wall part 24, and the second heat insulator 22 is stored in an inside storage space of the peripheral wall 26, and the RFID tag body 14 is disposed on the second heat insulator 22. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于高温的RFID标签，其可以适用于甚至可以被加热到非常高的温度的物体。解决方案：RFID标签包括RFID标签主体14和用于保护RFID标签主体的绝热构件16。绝热构件16包括由可加工陶瓷制成的第一绝热体20和由导热率低于第一绝热体的导热率的多孔陶瓷制成的第二绝热体22。第一绝热体20具有安装在物体上的底壁部24和从底壁部24上升的周壁26，第二隔热体22被储存在周壁26的内部收纳空间内，并且RFID标签主体14设置在第二绝热体22上。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007099540A Porous substrate and its preparation 有权
标题翻译：多孔基材及其制备
公开(公告)号：JP2007099540A
公开(公告)日：2007-04-19
申请号：JP2005289250
申请日：2005-09-30
申请人： Kobe Steel Ltd , Kyoto Univ , 国立大学法人京都大学 , 株式会社神戸製鋼所
发明人： HIRANO TAKAYUKI , KAWAKAMI NOBUYUKI , TANAKA TAKEHARU , SUZUKI TETSUO , FUKUMOTO YOSHITO , NAKANISHI KAZUKI , KANAMORI KAZUYOSHI
IPC分类号： C04B38/04 , B32B5/18 , B32B27/00 , C01B33/12 , H05K1/03
CPC分类号： H05K3/0011 , B32B21/04 , H05K1/024 , H05K1/0306 , H05K2201/0116 , Y10T428/249953 , Y10T428/249969
摘要： PROBLEM TO BE SOLVED: To provide a low transmission loss porous substrate which is a silicon-containing porous plate having an arbitrary thickness and a smooth surface and is provided with a smooth face homogeneous in nature with and nearly equivalent in thickness to the skeletal phase inside the porous substrate on the surface part of one face on which an electric/electronic circuit is formed. SOLUTION: A porous substrate provided with a smooth face homogeneous in nature with and nearly equivalent in thickness to the skeletal phase inside a porous substrate on the surface part of one face on which an electric/electronic circuit is formed is obtained by a method comprising the step of forming wet gel in a state separated into a three-dimensional network skeletal phase (solid phase) and a solvent-rich solution phase by a sol-gel reaction in the gap between a pair of flat plates, the step of drying and removing the solution from the wet gel, and the step of removing at least either of the pair of the flat plates. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种低透射率损失多孔基材，其是具有任意厚度和光滑表面的含硅多孔板，并且具有平滑表面，其性质与厚度相当且几乎等同于在其上形成电/电子电路的一个面的表面部分上的多孔基材内的骨架相。解决方案：在其上形成有电/电子电路的一个面的表面部分上的多孔基材内部具有平滑表面的多孔基材，其本质上具有均匀的光滑表面，并且几乎等同于多孔基材内的骨架相，其通过方法包括在一对平板之间的间隙中通过溶胶 - 凝胶反应在分离成三维网状骨架相（固相）和溶剂 - 凝胶反应的状态下形成湿凝胶的步骤，干燥并从湿凝胶中除去溶液，以及除去一对平板中的至少任一个的步骤。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005253044A Wireless communications apparatus 有权
标题翻译：无线通信设备
公开(公告)号：JP2005253044A
公开(公告)日：2005-09-15
申请号：JP2004340730
申请日：2004-11-25
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUKUMOTO YOSHITO , MANABE CHITAYOSHI , GOTO YUICHIRO , IKEDA HIDEO , INOUE KOJI , KEGASA MITSUYOSHI
IPC分类号： H04B1/40 , H04B7/212
CPC分类号： H04B1/52
摘要： PROBLEM TO BE SOLVED: To ensure high-speed wireless communication in other frequency bands, such as a submillimeter wave band to a millimeter wave band in stable communication quality, by making effective use of an existing modem of time division duplex (TDD), as it is. SOLUTION: A circulator 11 is connected with TDD modem 1 or 2, inputs the sending signals to output them to the first end connection p1, as well as input signals from the second end connection p2 to TDD modem 1 and 2. A frequency converter 2a raises signals from the circulator 11 by the previously fixed frequency range and lowers frequency of signals from a receiving antenna 32 by the previously fixed frequency range. The wireless communication apparatus comprises the circulator 11 and the frequency converter 2a. The settings for a frequency conversion range in the upward and downward directions are made different. There may be employed a wireless communication apparatus, wherein a filter which intercepts a transmitted radio frequency and passes a received radio frequency can be set between the receiving antenna 32 and a frequency converter 22a. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过有效利用现有的时分双工（TDD）调制解调器，确保通信质量稳定的其他频段（如亚毫米波段到毫米波段）的高速无线通信），因为它是。解决方案：循环器11与TDD调制解调器1或2连接，输入发送信号以将其输出到第一端连接p1，以及从第二端连接p2到TDD调制解调器1和2的输入信号。变频器2a将来自环行器11的信号提前预先固定的频率范围，并将来自接收天线32的信号的频率降低到预先固定的频率范围。无线通信装置包括环行器11和变频器2a。使向上和向下方向的频率转换范围的设置不同。可以采用无线通信装置，其中可以在接收天线32和变频器22a之间设置截取所发射的射频并通过接收的射频的滤波器。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005231970A Method of forming porous film and porous film formed by the same method 有权
标题翻译：形成多孔膜和多孔膜的方法
公开(公告)号：JP2005231970A
公开(公告)日：2005-09-02
申请号：JP2004045565
申请日：2004-02-23
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KAWAKAMI NOBUYUKI , HIRANO TAKAYUKI , FUKUMOTO YOSHITO
IPC分类号： C04B38/04
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a porous film hardly shrunk and deformed even when a thermal treatment is applied after the formation of the porous film by densifying a matrix part of a primary film to the utmost without being shrunk in the formation of the porous film, and the porous film formed by the method.
SOLUTION: The method of forming the porous film has a primary film forming process for forming the primary film having the matrix part formed from a matrix material and a porogen part formed from a porogen, a matrix raw material supply process for supplying the matrix raw material forming the matrix material dissolved in a super critical fluid or a subcritical fluid to the primary film and a removing process for removing the porogen from the porogen part of the primary film. In the removing process, it is preferable that the removal of the porogen is carried out in the super-critical fluid or the sub-critical fluid.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：为了提供形成多孔膜的方法，即使当在形成多孔膜之后进行热处理时，几何收缩和变形，通过最大限度地致密化初级膜的矩阵部分而不被收缩在多孔膜的形成中，以及通过该方法形成的多孔膜。解决方案：形成多孔膜的方法具有用于形成具有由基质材料形成的基体部分和由致孔剂形成的致孔剂部分的基膜的初始膜形成工艺，用于供应将形成基质材料的基质原料溶解在超临界流体或亚临界流体中的一次膜，以及从初级膜的致孔剂部分除去致孔剂的去除方法。在去除过程中，优选在超临界流体或亚临界流体中进行致孔剂的去除。版权所有（C）2005，JPO＆NCIPI

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