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1. 发明申请

US20070245757A1 Shielding Member and Indoor Unit of an Air Conditioner 失效
标题翻译：空调屏蔽室内机组
公开(公告)号：US20070245757A1
公开(公告)日：2007-10-25
申请号：US11666681
申请日：2005-10-31
申请人： Kiyoshi Inoue , Katsuhiko Wakihara , Naoko Asai , Toshiaki Yamada , Ikuhiro Yamada , Shiro Kashiwa
发明人： Kiyoshi Inoue , Katsuhiko Wakihara , Naoko Asai , Toshiaki Yamada , Ikuhiro Yamada , Shiro Kashiwa
IPC分类号： F24F13/20
CPC分类号： F24F1/0007 , F24F1/0059 , F24F11/83 , F24F11/84 , F24F13/20 , F24F13/30 , F28D1/04 , F28D2001/0266 , F28F13/00 , F28F27/02 , F28F2265/00
摘要： A shielding member includes a shielding plate for covering a part of a heat exchanger, heat transfer tube engagement sections for engaging with heat transfer tubes of the heat exchanger, fin engagement portions for engaging with fins of the heat exchanger, a bypass preventing rib for preventing air from being directed to the part of the heat exchanger, and a mismounting preventing portion for preventing the shielding member from being mounted on a heat exchanger that does not require blocking of air flow. The heat exchanger in which the part covered with the shielding member has no heat exchanging function is manufactured with the same components as those of a heat exchanger on which the shielding member is not mounted and the whole of which has a heat exchanging function.
摘要翻译：遮蔽构件包括用于覆盖热交换器的一部分的遮蔽板，用于与热交换器的传热管接合的传热管接合部，用于与热交换器的翅片接合的翅片接合部，用于防止空气被引导到热交换器的一部分，以及用于防止屏蔽构件安装在不需要阻塞空气流动的热交换器上的不匹配防止部分。用与屏蔽部件覆盖的部分不具有热交换功能的热交换器制造成与未安装屏蔽部件并且其全部具有热交换功能的热交换器相同的部件。

2. 发明授权

US07694526B2 Shielding member and indoor unit of an air conditioner 失效
标题翻译：空调屏蔽构件和室内机
公开(公告)号：US07694526B2
公开(公告)日：2010-04-13
申请号：US11666681
申请日：2005-10-31
申请人： Kiyoshi Inoue , Katsuhiro Wakihara , Naoko Asai , Toshiaki Yamada , Ikuhiro Yamada , Shiro Kashiwa
发明人： Kiyoshi Inoue , Katsuhiro Wakihara , Naoko Asai , Toshiaki Yamada , Ikuhiro Yamada , Shiro Kashiwa
IPC分类号： F25D17/06
CPC分类号： F24F1/0007 , F24F1/0059 , F24F11/83 , F24F11/84 , F24F13/20 , F24F13/30 , F28D1/04 , F28D2001/0266 , F28F13/00 , F28F27/02 , F28F2265/00
摘要： A shielding member includes a shielding plate for covering a part of a heat exchanger, heat transfer tube engagement sections for engaging with heat transfer tubes of the heat exchanger, fin engagement portions for engaging with fins of the heat exchanger, a bypass preventing rib for preventing air from being directed to the part of the heat exchanger, and a mismounting preventing portion for preventing the shielding member from being mounted on a heat exchanger that does not require blocking of air flow. The heat exchanger in which the part covered with the shielding member has no heat exchanging function is manufactured with the same components as those of a heat exchanger on which the shielding member is not mounted and the whole of which has a heat exchanging function.
摘要翻译：遮蔽构件包括用于覆盖热交换器的一部分的遮蔽板，用于与热交换器的传热管接合的传热管接合部，用于与热交换器的翅片接合的翅片接合部，用于防止空气被引导到热交换器的一部分，以及用于防止屏蔽构件安装在不需要阻塞空气流动的热交换器上的不匹配防止部分。用与屏蔽部件覆盖的部分不具有热交换功能的热交换器制造成与未安装屏蔽部件并且其全部具有热交换功能的热交换器相同的部件。

3. 发明授权

US06461776B1 Resist pattern forming method using anti-reflective layer, with variable extinction coefficient 有权
标题翻译：抗蚀图案形成方法采用抗反射层，具有可变消光系数
公开(公告)号：US06461776B1
公开(公告)日：2002-10-08
申请号：US10054932
申请日：2002-01-25
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03F900
CPC分类号： G03F7/091 , Y10S430/151
摘要： Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.
摘要翻译：公开了形成抗蚀剂图案的方法，该抗蚀剂图案解决了由于来自基板的反射光引起的由于偏离和干扰现象引起的问题。在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。在基板和抗蚀剂膜之间形成由用于曝光光的上部干涉膜构成的两层抗反射膜和具有比上部膜更高的曝光吸光度的下部膜并用作遮光膜的第二种方法。第三种方法在基板和抗蚀剂膜之间形成由反射曝光光的下膜和作为曝光光的干涉膜的上膜构成的两层抗反射膜。

4. 发明授权

US06548312B1 Manufacturing method of semiconductor integrated circuit devices and mask manufacturing methods 失效
标题翻译：半导体集成电路器件的制造方法和掩模制造方法
公开(公告)号：US06548312B1
公开(公告)日：2003-04-15
申请号：US09640721
申请日：2000-08-18
申请人： Katsuya Hayano , Norio Hasegawa , Akira Imai , Naoko Asai , Eiji Tsujimoto , Takahiro Watanabe
发明人： Katsuya Hayano , Norio Hasegawa , Akira Imai , Naoko Asai , Eiji Tsujimoto , Takahiro Watanabe
IPC分类号： H01L2100
CPC分类号： G03F7/70433
摘要： In order to inhibit or prevent a pattern abnormality such as the deformation or misalignment of a pattern of a semiconductor integrated circuit device, a light intensity is calculated based on the pattern data DBP of a mask and the aberration data DBL of a lens of a pattern exposure device (step 101) and then the results of the light intensity calculation is compared with the results of the light intensity calculated on condition that the lens of the pattern exposure device has no aberration (step 102), and then a pattern data exceeding an allowable level, of the pattern data of the mask, is corrected according to the amount of correction calculated on the basis of the results of the comparison such that the pattern data does not exceed the allowable level (step 104). The mask is manufactured by using the mask making data DBM after the correction and then is mounted on the pattern exposure device to transfer a predetermined pattern to a semiconductor wafer.
摘要翻译：为了抑制或防止诸如半导体集成电路器件的图案的变形或未对准的图案异常，基于掩模的图案数据DBP和图案的透镜的像差数据DBL计算光强度曝光装置（步骤101），然后将光强度计算的结果与在图案曝光装置的透镜没有像差的条件下计算的光强度的结果进行比较（步骤102），然后模式数据超过根据比较结果计算出的校正量，使图案数据不超过允许值（步骤104），对掩模的图案数据的允许电平进行校正。通过在校正后使用掩模制作数据DBM来制造掩模，然后安装在图案曝光装置上以将预定图案转印到半导体晶片。

5. 发明授权

US5985517A Resist pattern forming method using anti-reflective layer resist 有权
标题翻译：抗蚀剂图案形成方法采用抗反射层抗蚀剂
公开(公告)号：US5985517A
公开(公告)日：1999-11-16
申请号：US285010
申请日：1999-04-01
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03F7/09 , G03C1/825
CPC分类号： G03F7/091 , Y10S430/151
摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
摘要翻译：公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度膜或具有不平坦表面的基底。在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜并且用作遮光膜。在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。利用这些方法，可以形成精细且高精度的抗蚀剂图案。这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

6. 发明授权

US06555295B1 Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed 有权
标题翻译：使用抗反射层的抗蚀剂图案形成方法，形成的抗蚀剂图案，以及形成的抗蚀剂图案和产品的蚀刻方法
公开(公告)号：US06555295B1
公开(公告)日：2003-04-29
申请号：US10229216
申请日：2002-08-28
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03C500
CPC分类号： G03F7/091 , Y10S430/151
摘要： A very high reflection prevention effect can be produced for a variety of kinds of substrates, including those having transparent films and those having high reflectivity like metallic films, without posing any problem, such as aspect ratios, during the process of forming anti-reflective films This method can form fine and precise resist patterns and therefore improve the yield and reliability of devices to be manufactured. When applied to logic LSIs, this invention enables them to be manufactured at high dimensional precision and increases their operation speeds. While we have shown and described several embodiments in accordance with the present invention, it is understood that the same is not limited thereto, but is susceptible to numerous changes and modifications as is known in the art; and we therefore do not wish to be limited to the details shown and described herein, but intend to cover all such modifications as are encompassed by the scope of the appended claims.
摘要翻译：可以在形成抗反射膜的工艺期间，在各种各样的基板（包括具有透明膜和具有高反射率的金属膜的那些基板）中产生非常高的防反射效果，而不会产生诸如纵横比的任何问题该方法可以形成精细和精确的抗蚀剂图案，从而提高要制造的器件的产量和可靠性。当应用于逻辑LSI时，本发明使得它们能够以高尺寸精度制造并提高它们的操作速度。尽管我们已经示出和描述了根据本发明的几个实施例，但是应当理解，其不限于此，容易受到本领域已知的许多改变和修饰; 因此，我们不希望限于本文所示和描述的细节，而是旨在涵盖由所附权利要求的范围所包含的所有这样的修改。

7. 发明授权

US6162588A Resist pattern forming method using anti-reflective layer and method of etching using resist pattern 有权
标题翻译：使用抗反射层的抗蚀剂图案形成方法和使用抗蚀剂图案的蚀刻方法
公开(公告)号：US6162588A
公开(公告)日：2000-12-19
申请号：US440111
申请日：1999-11-15
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03F7/09 , G03C5/00
CPC分类号： G03F7/091 , Y10S430/151
摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
摘要翻译：公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度膜或具有不平坦表面的基底。在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜并且用作遮光膜。在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。利用这些方法，可以形成精细且高精度的抗蚀剂图案。这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

8. 发明授权

US5846693A Resist pattern forming method using anti-reflective layer with variable extinction coefficient 失效
标题翻译：使用具有可变消光系数的抗反射层的抗蚀图案形成方法
公开(公告)号：US5846693A
公开(公告)日：1998-12-08
申请号：US21186
申请日：1998-02-10
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03F7/09 , G03C1/825
CPC分类号： G03F7/091 , Y10S430/151
摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method.forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
摘要翻译：公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度膜或具有不平坦表面的基底。在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜并且用作遮光膜。在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。利用这些方法，可以形成精细且高精度的抗蚀剂图案。这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

9. 发明授权

US06255036B1 Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed 有权
标题翻译：使用抗反射层的抗蚀剂图案形成方法，形成的抗蚀剂图案，以及形成的抗蚀剂图案和产品的蚀刻方法
公开(公告)号：US06255036B1
公开(公告)日：2001-07-03
申请号：US09664554
申请日：2000-09-18
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03C500
CPC分类号： G03F7/091 , Y10S430/151
摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
摘要翻译：公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度膜或具有不平坦表面的基底。在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜并且用作遮光膜。在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。利用这些方法，可以形成精细且高精度的抗蚀剂图案。这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

10. 发明授权

US5733712A Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed 失效
标题翻译：使用抗反射层的抗蚀剂图案形成方法，形成的抗蚀剂图案，以及形成的抗蚀剂图案和产品的蚀刻方法
公开(公告)号：US5733712A
公开(公告)日：1998-03-31
申请号：US601361
申请日：1996-02-16
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03F7/09 , G03C1/825
CPC分类号： G03F7/091 , Y10S430/151
摘要： A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
摘要翻译：在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜并且用作遮光膜。在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。利用这些方法，可以形成精细且高精度的抗蚀剂图案。这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

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