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1. 发明授权

US4116722A Method for manufacturing compound semiconductor devices 失效
标题翻译：化合物半导体器件的制造方法
公开(公告)号：US4116722A
公开(公告)日：1978-09-26
申请号：US825717
申请日：1977-08-18
申请人： Kiyoo Kamei , Toshiaki Ikoma , Hirokuni Tokuda , Jeffrey Frey
发明人： Kiyoo Kamei , Toshiaki Ikoma , Hirokuni Tokuda , Jeffrey Frey
IPC分类号： H01L29/78 , H01L21/316 , H01L21/32 , H01L21/338 , H01L29/812 , H01L21/26
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/3167 , H01L21/31679 , H01L21/32 , H01L29/812
摘要： A method for manufacturing compound semiconductor devices includes a step of forming a first oxidized film on a GaAs body and heating it at a high temperature. A second oxidized film is thereafter formed on the body which includes the first oxidized film so as to change it properties, for example, to be easily etched with an etchant.
摘要翻译：制造化合物半导体器件的方法包括在GaAs体上形成第一氧化膜并在高温下加热的步骤。此后，在包括第一氧化膜的主体上形成第二氧化膜，以便改变其性质，例如易于用蚀刻剂蚀刻。

2. 发明授权

US4157610A Method of manufacturing a field effect transistor 失效
标题翻译：制造场效应晶体管的方法
公开(公告)号：US4157610A
公开(公告)日：1979-06-12
申请号：US825720
申请日：1977-08-18
申请人： Kiyoo Kamei , Toshiaki Ikoma , Hirokuni Tokuda
发明人： Kiyoo Kamei , Toshiaki Ikoma , Hirokuni Tokuda
IPC分类号： H01L21/316 , H01L21/336 , H01L29/78 , B01J17/00
CPC分类号： H01L29/66825 , H01L21/02241 , H01L21/02258 , H01L21/31679 , H01L29/78
摘要： The exposed surface of a semi-insulating compound semiconductor substrate is anodized while light is irradiated to the exposed surface to form a gate insulating film on the substrate between source and drain regions.
摘要翻译：半光绝缘化合物半导体衬底的暴露表面被阳极化，同时将光照射到暴露表面，以在源极和漏极区域之间的衬底上形成栅极绝缘膜。

3. 发明授权

US4648095A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4648095A
公开(公告)日：1987-03-03
申请号：US633971
申请日：1984-07-24
申请人： Tamotsu Iwasaki , Toshiaki Ikoma , Tsugunori Okumura
发明人： Tamotsu Iwasaki , Toshiaki Ikoma , Tsugunori Okumura
IPC分类号： H01S5/00 , H01S5/183 , H01S3/19
CPC分类号： H01L33/382 , H01L33/0025 , H01L33/0079 , H01L33/40 , H01S5/18305 , H01S5/18308 , H01S5/2072
摘要： Solid phase reaction products are employed as reflecting planes of a semiconductor laser facing each other with an active layer in between, which significantly improve its performance and productivity.
摘要翻译：使用固相反应产物作为半导体激光器的反射面，其间具有活性层，从而显着提高其性能和生产率。

4. 发明授权

US4636824A Voltage-controlled type semiconductor switching device 失效
标题翻译：电压控制型半导体开关器件
公开(公告)号：US4636824A
公开(公告)日：1987-01-13
申请号：US850065
申请日：1986-04-07
申请人： Toshiaki Ikoma , Hajime Maeda , Hisayoshi Yanai , Ryo Dang , Naoyuki Shigyo
发明人： Toshiaki Ikoma , Hajime Maeda , Hisayoshi Yanai , Ryo Dang , Naoyuki Shigyo
IPC分类号： H01L29/74 , H01L29/78
CPC分类号： H01L29/78 , H01L29/74
摘要： A voltage-control type semiconductor switching device is disclosed which includes a pair of controlled electrodes to which a control voltage signal is supplied, and a semiconductive layer formed between the electrodes so as electrically insulative from the electrodes through insulative layers. The semiconductive layer has a channel region and a carrier-storage region which is substantially nonconductive. The channel region is formed laterally along the longitudinal direction of the electrodes, thereby allowing majority carriers such as electrons of the semiconductive layer to flow in the lateral direction. In the current cut-off mode, the carrier-storage region temporarily stores the carriers which move in the direction of thickness of the semiconductive layer due to the electric field created by the voltage. In the current conduction mode, the carrier-storage region releases the carriers stored therein toward the channel region.
摘要翻译：公开了一种电压控制型半导体开关器件，其包括一对受控电极，控制电压信号被提供给该电压控制电极，以及形成在电极之间的半导体层，以便通过绝缘层与电极电绝缘。半导体层具有基本不导电的沟道区和载流子存储区。通道区域沿着电极的纵向横向地形成，从而允许多数载流子例如半导体层的电子沿横向流动。在当前截止模式中，载流子存储区域暂时存储由于由电压产生的电场而在半导体层的厚度方向上移动的载流子。在电流导通模式中，载流子存储区域释放其中存储的载流子朝向沟道区域。

5. 发明申请

US20140204195A1 MICROSCOPE, OBJECTIVE OPTICAL SYSTEM, AND IMAGE ACQUISITION APPARATUS 审中-公开
标题翻译： MICROSCOPE，目标光学系统和图像采集设备
公开(公告)号：US20140204195A1
公开(公告)日：2014-07-24
申请号：US14240006
申请日：2012-07-30
申请人： Yuji Katashiba , Kazuhiko Kajiyama , Hirofumi Fujii , Toshiaki Ikoma
发明人： Yuji Katashiba , Kazuhiko Kajiyama , Hirofumi Fujii , Toshiaki Ikoma
IPC分类号： G02B27/14 , H04N7/18
CPC分类号： G02B27/14 , G02B21/04 , G02B26/0833 , H04N5/2254 , H04N7/18
摘要： A microscope includes an objective optical system including an imaging optical system configured to form an image of an object, a re-imaging optical system configured to re-form an image of the object image formed by the imaging optical system, and a reflection unit arranged on an optical path between the imaging optical system and the re-imaging optical system and configured to be locally changeable in at least one of a position thereof in an optical axis direction and an inclination thereof relative to an optical axis, and an image sensor configured to capture the image re-formed by the objective optical system.
摘要翻译：显微镜包括物镜光学系统，其包括被配置为形成物体的图像的成像光学系统，被配置为重新形成由所述成像光学系统形成的所述物体图像的图像的再成像光学系统;以及反射单元，在成像光学系统和重新成像光学系统之间的光路上，并且被配置为在光轴方向的位置和相对于光轴的倾斜中的至少一个中局部地变化，以及被配置为以捕获由物镜光学系统重新形成的图像。

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