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1. 发明授权

US4538179A Image processing for unsharp masking of image 失效
标题翻译：用于图像的钝化掩蔽的图像处理
公开(公告)号：US4538179A
公开(公告)日：1985-08-27
申请号：US493555
申请日：1983-05-11
申请人： Kimura Tsutomu , Hideo Nakayama , Yuichi Fuseda
发明人： Kimura Tsutomu , Hideo Nakayama , Yuichi Fuseda
IPC分类号： G06T5/20 , H04N5/30 , H04N1/40
CPC分类号： G06T5/004 , G06T5/20
摘要： Unsharp masking operations of original video signals are performed by a couple of processor systems (100, 200), which are interconnected in cascades logically to share the burden of the operations. One processor system (100) in the preceding stage executes a part of unsharp masking operations by accumulating the original video signals with respect to the pixels involved in an original image to transfer the resultant data together with the associated original video signals to the other processor system (200) in the subsequent stage. The other processor system (200) receives those data and proceeds the remaining operations required for the unsharp masking operations including averaging by simple or weighted addition. Those operations are executed with respect to all unsharp masks involved in the original image. Since the one processor system (100) shares the unsharp masking operations with the other processor system (200), the total operational speed is increased approximately twice as much as an image processing system composed of a single-processor system, giving rise to a real-time processing of unsharp masking of images.
摘要翻译：原始视频信号的锐化掩蔽操作由几个处理器系统（100,200）执行，这些处理器系统在逻辑上以级联方式互连以分担操作的负担。前一级的一个处理器系统（100）通过相对于原始图像中涉及的像素累积原始视频信号来执行一部分不清晰的掩蔽操作，以将结果数据与相关联的原始视频信号一起传送到另一个处理器系统（200）。另一个处理器系统（200）接收那些数据，并且进行用于非锐化掩蔽操作所需的剩余操作，包括通过简单或加权相加进行平均。相对于原始图像中涉及的所有钝化掩模执行这些操作。由于一个处理器系统（100）与其他处理器系统（200）共享不清晰的掩蔽操作，所以总的操作速度增加了大约是由单处理器系统组成的图像处理系统的两倍，从而产生真实的时间处理图像的钝化掩蔽。

2. 发明授权

US09166370B2 Vertical cavity surface emitting laser, vertical cavity surface emitting laser apparatus, optical transmission apparatus, and information processing apparatus 有权
标题翻译：垂直腔面发射激光器，垂直腔面发射激光装置，光传输装置和信息处理装置
公开(公告)号：US09166370B2
公开(公告)日：2015-10-20
申请号：US13456909
申请日：2012-04-26
申请人： Takashi Kondo , Hideo Nakayama , Kazutaka Takeda , Fumio Koyama
发明人： Takashi Kondo , Hideo Nakayama , Kazutaka Takeda , Fumio Koyama
IPC分类号： H01S5/00 , H01S5/183 , H01S5/10 , H01S5/32 , H01S5/20
CPC分类号： H01S5/18358 , H01S5/1039 , H01S5/18311 , H01S5/209 , H01S5/3211
摘要： A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.
摘要翻译：垂直腔表面发射激光器包括第一半导体多层反射器，谐振器和第二半导体多层反射器。第一半导体多层反射器形成在基板上，并且通过堆叠具有较高折射率的高折射率层和折射率相对较低的低折射率层而构成。谐振器包括形成在第一半导体多层反射器上的有源层。第二半导体多层反射器通过层叠高折射率层和低折射率层而构成。谐振器包括垂直于有源层设置的一对间隔层和形成在一对间隔层的一侧的谐振器延伸区域。谐振器延伸区域包含其中具有晶体缺陷的能级高于没有晶体缺陷的一般能级的材料。

3. 发明授权

US08923742B2 Fixing device and image forming apparatus 有权
标题翻译：固定装置和成像装置
公开(公告)号：US08923742B2
公开(公告)日：2014-12-30
申请号：US13399104
申请日：2012-02-17
申请人： Osamu Ueno , Tomoaki Kojima , Hideo Nakayama , Masateru Yamamoto
发明人： Osamu Ueno , Tomoaki Kojima , Hideo Nakayama , Masateru Yamamoto
IPC分类号： G03G15/20
CPC分类号： G03G15/2007
摘要： A fixing device includes a transport member that transports a recording medium in a first direction, the recording medium having on one side thereof an image formed of an image forming material that is to be fixed by absorbing light; a first chip that has a first light-emitting area in which a plurality of light-emitting elements that emit light toward the one side of the recording medium are arranged two-dimensionally; and a second chip that has a second light-emitting area in which a plurality of light-emitting elements that emit light toward the one side of the recording medium are arranged two-dimensionally. A gap between the first light-emitting area and the second light-emitting area extends at an angle with respect to the first direction, and a portion of the first light-emitting area and a portion of the second light-emitting area overlap each other in the first direction.
摘要翻译：定影装置包括：输送构件，其沿第一方向输送记录介质，所述记录介质的一侧具有通过吸收光而被固定的图像形成材料形成的图像; 具有第一发光区域的第一芯片，其中向记录介质的一侧发射光的多个发光元件被二维布置; 并且具有第二发光区域的第二芯片，其中向记录介质的一侧发射光的多个发光元件被二维布置。第一发光区域和第二发光区域之间的间隙相对于第一方向成一角度延伸，并且第一发光区域和第二发光区域的一部分彼此重叠在第一个方向。

4. 发明授权

US08477821B2 Vertical cavity surface emitting laser, vertical cavity surface emitting laser device, and optical transmission device 有权
标题翻译：垂直腔表面发射激光器，垂直腔表面发射激光器件和光传输器件
公开(公告)号：US08477821B2
公开(公告)日：2013-07-02
申请号：US12861438
申请日：2010-08-23
申请人： Masahiro Yoshikawa , Hideo Nakayama
发明人： Masahiro Yoshikawa , Hideo Nakayama
IPC分类号： H01S5/00
CPC分类号： H01S5/18338 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18313 , H01S5/18347 , H01S5/1835 , H01S5/18355 , H01S5/18358
摘要： A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second reflector of a second conductive type formed on the active region; and a current confining layer formed between the first reflector and the second reflector; and a metallic electrode that is formed on the second reflector, and is electrically connected to the second reflector. A conductive region with an anisotropy where a length in a longitudinal direction is different from a length in a short direction is formed in the current confining layer, and an opening defining a beam aperture is formed in the metallic electrode, and a diameter of the opening in the longitudinal direction is smaller than the length of the conductive region in the longitudinal direction.
摘要翻译：一种垂直腔表面发射激光器，包括：衬底; 形成在所述基板上的第一导电类型的第一反射器; 形成在所述第一反射器上的有源区; 形成在所述有源区上的第二导电类型的第二反射器; 以及形成在所述第一反射器和所述第二反射器之间的电流限制层; 以及金属电极，其形成在所述第二反射器上，并且电连接到所述第二反射器。在电流限制层中形成具有纵向长度不同长度方向的各向异性的导电区域，并且在金属电极中形成限定了光束孔径的开口，开口部的直径在长度方向上比导电区域的长度方向的长度小。

5. 发明授权

US08290670B2 Clutch control device and clutch control method 有权
标题翻译：离合器控制装置和离合器控制方法
公开(公告)号：US08290670B2
公开(公告)日：2012-10-16
申请号：US11919500
申请日：2006-04-26
申请人： Tetsuji Tanaka , Masami Higaki , Hideo Nakayama , Eiichi Sakai , Hidenobu Tsukada
发明人： Tetsuji Tanaka , Masami Higaki , Hideo Nakayama , Eiichi Sakai , Hidenobu Tsukada
IPC分类号： B60W10/02 , B60W10/10 , F16H31/00 , F16H61/00 , G06F17/00 , G06F19/00
CPC分类号： F16H61/061 , F16H61/08 , F16H61/684 , F16H2059/363 , F16H2059/425 , F16H2061/0096 , Y10T477/6394 , Y10T477/6414 , Y10T477/69335
摘要： A clutch control device includes: a plurality of hydraulic clutches built into a transmission; a clutch switching pattern storage device in which a plurality of clutch switching patterns, each defining engage/release changeover timing with which the plurality of hydraulic clutches are engaged/released are stored in correspondence to individual speed change patterns adopted by the transmission; a clutch switching pattern selection device that selects a clutch switching pattern stored in the clutch switching pattern storage device in correspondence to a speed change pattern for the transmission at a time of speed change; and a hydraulic control device that executes hydraulic control for the plurality of hydraulic clutches in correspondence to the clutch switching pattern selected by the clutch switching pattern selection device.
摘要翻译：离合器控制装置包括：内置于变速器中的多个液压离合器; 一种离合器切换模式存储装置，其中，与传送所采用的各个速度变化模式相对应地存储有多个离合器切换模式，每个离合器切换模式各自定义与多个液压离合器接合/释放的接合/释放切换定时; 离合器切换模式选择装置，其对应于速度变化时的变速器的变速模式，选择存储在离合器切换模式存储装置中的离合器切换模式; 以及液压控制装置，其对应于由离合器切换模式选择装置选择的离合器切换模式，对多个液压离合器执行液压控制。

6. 发明申请

US20110150500A1 VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS 审中-公开
标题翻译：垂直孔表面发射激光，垂直孔表面发射激光装置，光传输装置和信息处理装置
公开(公告)号：US20110150500A1
公开(公告)日：2011-06-23
申请号：US12775683
申请日：2010-05-07
申请人： Kazuyuki Matsushita , Hideo Nakayama , Masahiro Yoshikawa , Kazutaka Takeda
发明人： Kazuyuki Matsushita , Hideo Nakayama , Masahiro Yoshikawa , Kazutaka Takeda
IPC分类号： H04B10/04 , H01S5/18 , H01L21/28 , G11B7/00
CPC分类号： H01S5/18313 , H01S5/02212 , H01S5/02284 , H01S5/02288 , H01S5/18347 , H01S5/18377 , H01S5/18394
摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed on the substrate; a current narrowing layer that is formed inside of the columnar structure, and has a conductive region surrounded by an oxidization region selectively oxidized; a first electrode that is formed at a top of the columnar structure, and defines a beam window; a first insulating film that covers the beam window; and a second insulating film of which a second refractive index is larger than the first refractive index. A reflection ratio in a second region where the second insulating film is formed is lower than a reflection ratio in a first region where only the first insulating film is formed.
摘要翻译：一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域第二半导体多层反射器; 形成在基板上的柱状结构; 形成在柱状结构内部的电流变窄层，具有被氧化区域包围的导电区域选择性氧化; 第一电极，其形成在所述柱状结构的顶部，并且限定梁窗; 覆盖梁窗的第一绝缘膜; 第二绝缘膜的第二折射率大于第一折射率。在形成第二绝缘膜的第二区域中的反射率低于仅形成第一绝缘膜的第一区域中的反射率。

7. 发明授权

US07684459B2 Semiconductor laser apparatus and fabrication method of the same 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07684459B2
公开(公告)日：2010-03-23
申请号：US11338739
申请日：2006-01-25
申请人： Naotaka Mukoyama , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Yasuaki Kuwata
发明人： Naotaka Mukoyama , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Yasuaki Kuwata
IPC分类号： H01S3/097
CPC分类号： B82Y20/00 , H01L2224/48091 , H01L2924/19107 , H01S5/02212 , H01S5/02272 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01L2924/00014
摘要： There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.
摘要翻译：提供半导体激光装置。半导体激光二极管的电极通过管芯连接接合，并且半导体激光二极管的电极预先包括Au和除Au之外的组合芯片的至少一种材料。

8. 发明授权

US07502566B2 Light-emitting module 有权
标题翻译：发光模块
公开(公告)号：US07502566B2
公开(公告)日：2009-03-10
申请号：US11319702
申请日：2005-12-29
申请人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Naotaka Mukoyama
发明人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Naotaka Mukoyama
IPC分类号： H04B10/12 , H04B10/00
CPC分类号： H04B10/0799 , G02B6/32 , G02B6/4206 , H04B10/114
摘要： A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.
摘要翻译：一种发光模块，其经由透镜输出从半导体发光元件发射的激光束，所述发光模块包括第一主平面，安装半导体发光元件的第一主平面上的安装部，透镜保持部分，其保持透镜，使得透镜的光轴对应于与第一主平面成直角交叉的参考线;半导体光接收元件，接收由所发射的激光束中的透镜反射的激光束从半导体发光元件。半导体光接收元件位于透镜的光轴上，半导体发光元件远离透镜的光轴设置。

9. 发明申请

US20090016732A1 METHOD FOR DRIVING SURFACE EMITTING SEMICONDUCTOR LASER, OPTICAL TRANSMISSION MODULE, AND HANDHELD ELECTRONIC DEVICE 有权
标题翻译：驱动表面发射半导体激光器，光传输模块和手持式电子设备的方法
公开(公告)号：US20090016732A1
公开(公告)日：2009-01-15
申请号：US12036570
申请日：2008-02-25
申请人： Osamu Ueno , Akira Sakamoto , Kazuhiro Sakai , Hideo Nakayama , Akemi Murakami
发明人： Osamu Ueno , Akira Sakamoto , Kazuhiro Sakai , Hideo Nakayama , Akemi Murakami
IPC分类号： H04B10/00 , H01S5/042
CPC分类号： H04B10/504 , H01S5/0427 , H01S5/06812 , H01S5/18311
摘要： Provided is a method for driving a surface emitting semiconductor laser including an active region that generates light, a resonator structure disposed such that it sandwiches the active region, and a driving electrode that provides power to the active region. The surface emitting semiconductor laser has an internal resistance defined by voltage and current applied to the driving electrode. The method includes applying a modulation signal to the driving electrode, in which the modulation signal has a current amplitude defined by a first current value and a second current value that is greater than the first current value. The modulation signal is in a negative gradient region in which the internal resistance decreases in contrast to the increase of the current.
摘要翻译：提供了一种用于驱动表面发射半导体激光器的方法，所述表面发射半导体激光器包括产生光的有源区，设置成使其夹持有源区的谐振器结构以及向有源区提供电力的驱动电极。表面发射半导体激光器具有由施加到驱动电极的电压和电流限定的内部电阻。该方法包括将调制信号施加到驱动电极，其中调制信号具有由第一电流值定义的电流幅度和大于第一电流值的第二电流值。与电流增加相反，调制信号处于负梯度区域，其中内阻减小。

10. 发明申请

US20050271107A1 Semiconductor laser apparatus and manufacturing method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20050271107A1
公开(公告)日：2005-12-08
申请号：US10990373
申请日：2004-11-18
申请人： Akemi Murakami , Hideo Nakayama , Yasuaki Kuwata , Teiichi Suzuki , Ryoji Ishii
发明人： Akemi Murakami , Hideo Nakayama , Yasuaki Kuwata , Teiichi Suzuki , Ryoji Ishii
IPC分类号： H01S5/183 , H01S5/00 , H01S5/026 , H01S5/068
CPC分类号： H01S5/18341 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/1301 , H01S5/0261 , H01S5/06825 , H01S5/18311 , H01S5/2009 , Y10S438/979 , Y10S438/983 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.
摘要翻译：半导体激光装置具有齐纳二极管，该齐纳二极管含有第一导电类型的第一半导体区域和与第一半导体区域连接的第二导电类型的第二半导体区域，以及堆叠在齐纳二极管上的垂直腔表面发射半导体激光二极管二极管，并且至少包含第一导电类型的第一镜层，第二导电类型的第二镜层和夹在第一和第二镜层之间的有源区。第一半导体区域和第二镜像层电连接，并且第二半导体区域和第一镜像层电连接。

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