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1. 发明申请

US20070091962A1 Substrate for vertical cavity surface emitting laser ( VCSEL) and method for manufacturing VCSEL device 审中-公开
标题翻译：用于垂直腔表面发射激光器（VCSEL）的基板和用于制造VCSEL器件的方法
公开(公告)号：US20070091962A1
公开(公告)日：2007-04-26
申请号：US11491794
申请日：2006-07-24
申请人： Akemi Murakami , Hiromi Otoma , Ryoji Ishii
发明人： Akemi Murakami , Hiromi Otoma , Ryoji Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01L2224/48463 , H01S5/0014 , H01S5/0201 , H01S5/02288 , H01S5/0425
摘要： The present invention provides a substrate for a VCSEL that improves reliability and yield. A substrate for VCSEL includes multiple element regions separated by an element dividing region that is scribed or diced. In each element region, a light emitter that emits laser light in a direction perpendicular to the substrate, and an electrode pad electrically coupled to the light emitter are formed. In the element dividing region, electrode pads for inspection each electrically coupled to the light emitter of each element region is formed.
摘要翻译：本发明提供了一种提高可靠性和产率的VCSEL用基板。用于VCSEL的衬底包括由被刻划或切割的元素划分区域分隔开的多个元件区域。在每个元件区域中，形成在垂直于衬底的方向上发射激光的光发射器和与发光体电耦合的电极焊盘。在元件分割区域中，形成电耦合到每个元件区域的发光体的用于检查的电极焊盘。

2. 发明申请

US20070019960A1 Light-emitting module 有权
标题翻译：发光模块
公开(公告)号：US20070019960A1
公开(公告)日：2007-01-25
申请号：US11319702
申请日：2005-12-29
申请人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Naotaka Mukoyama
发明人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Naotaka Mukoyama
IPC分类号： H04B10/00
CPC分类号： H04B10/0799 , G02B6/32 , G02B6/4206 , H04B10/114
摘要： A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.
摘要翻译：一种发光模块，其经由透镜输出从半导体发光元件发射的激光束，所述发光模块包括第一主平面，安装半导体发光元件的第一主平面上的安装部，透镜保持部分，其保持透镜，使得透镜的光轴对应于与第一主平面成直角交叉的参考线;半导体光接收元件，接收由所发射的激光束中的透镜反射的激光束从半导体发光元件。半导体光接收元件位于透镜的光轴上，半导体发光元件远离透镜的光轴设置。

3. 发明授权

US5809052A Semiconductor laser array driving method, semiconductor laser array driving device and image forming apparatus 失效
标题翻译：半导体激光阵列驱动方法，半导体激光阵列驱动装置和图像形成装置
公开(公告)号：US5809052A
公开(公告)日：1998-09-15
申请号：US731750
申请日：1996-10-18
申请人： Yasuji Seko , Akemi Murakami , Hiromi Otoma , Nobuaki Ueki , Hideki Fukunaga , Hideo Nakayama , Mario Fuse
发明人： Yasuji Seko , Akemi Murakami , Hiromi Otoma , Nobuaki Ueki , Hideki Fukunaga , Hideo Nakayama , Mario Fuse
IPC分类号： H01S5/062 , H01S5/40 , H01S3/08
CPC分类号： H01S5/4031 , H01S5/0021 , H01S5/06216
摘要： A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current of a pulse width and a duty factor meeting an inequality: .DELTA.T.sub.1 /.DELTA.T.sub.0
摘要翻译：一种用于驱动具有布置在基底构件上的多个发光点的半导体激光器阵列的半导体激光阵列驱动方法。半导体激光阵列驱动方法具有通过满足不等式的脉冲宽度和占空比的驱动脉冲电流来驱动多个发光点的步骤：DELTA T1 / DELTA T0 <+ E，fra 1/2 + EE 其中，当使用连续电流以连续驱动模式驱动半导体激光器阵列时，DELTA T0是发光点的有源层中的温度升高，并且DELTA T1是发光的有源层中的温度升高当使用脉冲电流以脉冲驱动模式驱动半导体激光器阵列时的点。在半导体激光器阵列驱动方法中，多个发光点由占空比为0.4以下的驱动脉冲电流驱动，满足不等式：y <3.1exp（-8.9x），其中x是占空系数 y是脉冲宽度（mu s）。

4. 发明授权

US5124961A Floating head for use with a recording apparatus of magneto-optical memory device 失效
标题翻译：用于与磁光存储器件的记录装置一起使用的浮动头
公开(公告)号：US5124961A
公开(公告)日：1992-06-23
申请号：US633336
申请日：1990-12-27
申请人： Shoji Yamaguchi , Akemi Murakami , Takashi Nomiyama , Kaoru Yasukawa , Daisuke Iguchi
发明人： Shoji Yamaguchi , Akemi Murakami , Takashi Nomiyama , Kaoru Yasukawa , Daisuke Iguchi
IPC分类号： G11B5/127 , G11B5/17 , G11B11/105
CPC分类号： G11B11/10532 , G11B11/10554 , G11B11/1058 , G11B5/127 , G11B5/17
摘要： A floating head for use with a recording apparatus of magneto-optical memory type comprising a floating body which is provided in the vicinity of a rotating optical recording medium and which is made afloat by an air stream created by the rotation of the recording medium, an objective lens which is fitted in an optical path forming aperture in the floating body and which permits converging light from a light source to be focused on a focusing plane of the recording medium, and a coil which is installed in the vicinity of the optical path forming aperture in the floating body and which forms a magnetic field toward the focusing plane of the recording medium. The floating body is made of a soft magnetic material and is provided with a rim made of a soft magnetic material which is formed along the peripheral edge of the optical path forming aperture on the side closer to the optical recording medium and which projects toward the same. The rim is tapered in such a way that its wall thickness decreases gradually toward the center of the optical path forming aperture.
摘要翻译：一种与磁光存储器类型的记录装置一起使用的浮动头，包括设置在旋转光记录介质附近并被由记录介质的旋转产生的空气流漂浮的浮体，物镜安装在浮动体的光路形成孔中，并且允许会聚来自光源的光聚焦在记录介质的聚焦平面上;线圈，其安装在光路形成附近并且朝向记录介质的聚焦平面形成磁场。浮体由软磁性材料制成，并且设置有由柔性磁性材料制成的边缘，沿着光路形成孔的周缘形成在靠近光记录介质的一侧的边缘，。边缘以使其壁厚朝向光路形成孔的中心逐渐减小的方式逐渐变细。

5. 发明授权

US08400482B2 Image hold body and image forming apparatus 有权
标题翻译：图像保持体和图像形成装置
公开(公告)号：US08400482B2
公开(公告)日：2013-03-19
申请号：US12869059
申请日：2010-08-26
申请人： Tatsuo Okuno , Kenji Ogi , Akemi Murakami , Akihiko Noda
发明人： Tatsuo Okuno , Kenji Ogi , Akemi Murakami , Akihiko Noda
IPC分类号： B41J2/39 , B41J2/395 , B41J2/41 , G11B3/00
CPC分类号： B41J2/39 , B41J2/447 , G03G15/32 , G03G2215/00957
摘要： An image hold body includes a support body, a plurality of pixel electrodes, charge storage members, switch members, scanning lines, signal lines and shield members. A latent image voltage is applied to the plurality of pixel electrodes based on an image signal. The charge storage members store charge corresponding to the latent image voltage. The scanning lines select and scan pixel electrode groups through the switch members. The signal lines apply the latent image voltage through the switch members to the pixel electrodes of each of the pixel electrode groups selected by the scanning lines. The shield members are provided on the support body corresponding to the signal lines placed in the proximity of the pixel electrodes, and shield an effect of at least a part of an electric field from the signal line on an electric field based on the latent image voltage of the pixel electrodes.
摘要翻译：图像保持体包括支撑体，多个像素电极，电荷存储构件，开关构件，扫描线，信号线和屏蔽构件。基于图像信号将潜像电压施加到多个像素电极。电荷存储部件存储对应于潜像电压的电荷。扫描线通过开关元件选择和扫描像素电极组。信号线通过开关构件将潜像电压施加到由扫描线选择的每个像素电极组的像素电极。屏蔽构件设置在支撑体上，与放置在像素电极附近的信号线相对应，并且基于潜像电压屏蔽来自信号线的电场的至少一部分对电场的影响的像素电极。

6. 发明授权

US08023539B2 Method for driving surface emitting semiconductor laser, optical transmission module, and handheld electronic device 有权
标题翻译：用于驱动表面发射半导体激光器，光传输模块和手持电子设备的方法
公开(公告)号：US08023539B2
公开(公告)日：2011-09-20
申请号：US12036570
申请日：2008-02-25
申请人： Osamu Ueno , Akira Sakamoto , Kazuhiro Sakai , Hideo Nakayama , Akemi Murakami
发明人： Osamu Ueno , Akira Sakamoto , Kazuhiro Sakai , Hideo Nakayama , Akemi Murakami
IPC分类号： H01S3/10 , H01S3/13 , H01S3/00
CPC分类号： H04B10/504 , H01S5/0427 , H01S5/06812 , H01S5/18311
摘要： Provided is a method for driving a surface emitting semiconductor laser including an active region that generates light, a resonator structure disposed such that it sandwiches the active region, and a driving electrode that provides power to the active region. The surface emitting semiconductor laser has an internal resistance defined by voltage and current applied to the driving electrode. The method includes applying a modulation signal to the driving electrode, in which the modulation signal has a current amplitude defined by a first current value and a second current value that is greater than the first current value. The modulation signal is in a negative gradient region in which the internal resistance decreases in contrast to the increase of the current.
摘要翻译：提供了一种用于驱动表面发射半导体激光器的方法，所述表面发射半导体激光器包括产生光的有源区，设置成使其夹持有源区的谐振器结构以及向有源区提供电力的驱动电极。表面发射半导体激光器具有由施加到驱动电极的电压和电流限定的内部电阻。该方法包括将调制信号施加到驱动电极，其中调制信号具有由第一电流值定义的电流幅度和大于第一电流值的第二电流值。与电流增加相反，调制信号处于负梯度区域，其中内阻减小。

7. 发明授权

US07995636B2 Semiconductor laser apparatus and manufacturing method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07995636B2
公开(公告)日：2011-08-09
申请号：US10990373
申请日：2004-11-18
申请人： Akemi Murakami , Hideo Nakayama , Yasuaki Kuwata , Teiichi Suzuki , Ryoji Ishii
发明人： Akemi Murakami , Hideo Nakayama , Yasuaki Kuwata , Teiichi Suzuki , Ryoji Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/1301 , H01S5/0261 , H01S5/06825 , H01S5/18311 , H01S5/2009 , Y10S438/979 , Y10S438/983 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.
摘要翻译：半导体激光装置具有齐纳二极管，该齐纳二极管含有第一导电类型的第一半导体区域和与第一半导体区域连接的第二导电类型的第二半导体区域，以及堆叠在齐纳二极管上的垂直腔表面发射半导体激光二极管二极管，并且至少包含第一导电类型的第一镜层，第二导电类型的第二镜层和夹在第一和第二镜层之间的有源区。第一半导体区域和第二镜像层电连接，并且第二半导体区域和第一镜像层电连接。

8. 发明授权

US07058104B2 Surface emitting semiconductor laser and method of fabricating the same 失效
公开(公告)号：US07058104B2
公开(公告)日：2006-06-06
申请号：US10375110
申请日：2003-02-28
申请人： Nobuaki Ueki , Hiromi Otoma , Akemi Murakami , Akira Sakamoto
发明人： Nobuaki Ueki , Hiromi Otoma , Akemi Murakami , Akira Sakamoto
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01L2224/48463 , H01S5/02272 , H01S5/02276 , H01S5/0421 , H01S5/0425 , H01S5/06226 , H01S5/18344
摘要： A surface emitting semiconductor laser includes a substrate, a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof, and an electrode portion having a second post construction provided on the substrate. The electrode portion includes a conductive layer electrically connected to the contact region and extends therefrom.

9. 发明申请

US20050238076A1 Semiconductor laser apparatus and manufacturing method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20050238076A1
公开(公告)日：2005-10-27
申请号：US10978487
申请日：2004-11-02
申请人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii
发明人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii
IPC分类号： H01S5/026 , H01S5/00 , H01S5/068 , H01S5/183 , H01S5/30
CPC分类号： H01S5/0261 , H01S5/06825 , H01S5/18313 , H01S5/305 , H01S5/3054
摘要： A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.
摘要翻译：半导体激光装置包括基板，垂直腔表面发射半导体激光二极管（VCSEL），分别包括第一和第二导电类型的第一和第二反射镜层，第一和第二反射镜层之间的有源区，分别与第一和第二镜层电连接的第一和第二电极层和分别包括第一和第二导电类型的第一和第二半导体区域的至少一个齐纳二极管以及与第一和第二电极层电连接的第三和第四电极层第一和第二半导体区域。第二半导体区域形成在第一半导体区域的一部分中并与第一半导体区域形成PN结。在衬底上形成VCSEL和齐纳二极管。第一和第二电极层分别与第四和第三电极层电连接。

10. 发明授权

US06483860B1 Surface emitting semiconductor laser with oxidized post structure 有权
标题翻译：具有氧化柱结构的表面发射半导体激光器
公开(公告)号：US06483860B1
公开(公告)日：2002-11-19
申请号：US09655061
申请日：2000-09-05
申请人： Nobuaki Ueki , Takeshi Nakamura , Akemi Murakami
发明人： Nobuaki Ueki , Takeshi Nakamura , Akemi Murakami
IPC分类号： H01S500
CPC分类号： H01S5/18355 , H01S5/18311 , H01S5/3202 , H01S5/423
摘要： The present invention provides a surface emitting semiconductor laser that, with a relatively simple construction, can control the polarization of laser beam to a given direction and obtain a low threshold current and high output. Also, the present invention provides a laser array that has substantially no variations in polarization properties among plural laser devices arranged on a single substrate. In a surface emitting semiconductor laser in which upper and lower reflecting mirror layers are formed on a main face of a semiconductor substrate to sandwich an active layer, at least one of the upper and lower reflecting films including a selective oxidation layer oxidized in a circumferential part thereof, the main face of the semiconductor substrate is tilted with respect to a face containing a reference crystal axis, and the selective oxidation layer is formed by oxidizing a layer to be oxidized from a circumferential part thereof, wherein the circumferential shape of the layer, when cut by a face parallel to the main face, has at least no singular point and is macroscopically smooth.
摘要翻译：本发明提供了一种表面发射半导体激光器，其具有相对简单的结构，可以将激光束的偏振控制到给定方向，并获得低阈值电流和高输出。此外，本发明提供一种激光器阵列，其在布置在单个基板上的多个激光器件中基本上没有偏振特性的变化。在上半反射镜层和下反射镜层形成在半导体衬底的主面以夹持有源层的表面发射半导体激光器中，上反射膜和下反射膜中的至少一个包括在周向部分氧化的选择性氧化层半导体衬底的主面相对于包含参考晶轴的面倾斜，并且通过从其圆周部氧化被氧化层而形成选择氧化层，其中层的周向形状，当被平行于主面的面切割时，至少没有奇异点，并且在宏观上平滑。

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