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1. 发明申请

US20070019960A1 Light-emitting module 有权
标题翻译：发光模块
公开(公告)号：US20070019960A1
公开(公告)日：2007-01-25
申请号：US11319702
申请日：2005-12-29
申请人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Naotaka Mukoyama
发明人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Naotaka Mukoyama
IPC分类号： H04B10/00
CPC分类号： H04B10/0799 , G02B6/32 , G02B6/4206 , H04B10/114
摘要： A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.
摘要翻译：一种发光模块，其经由透镜输出从半导体发光元件发射的激光束，所述发光模块包括第一主平面，安装半导体发光元件的第一主平面上的安装部，透镜保持部分，其保持透镜，使得透镜的光轴对应于与第一主平面成直角交叉的参考线;半导体光接收元件，接收由所发射的激光束中的透镜反射的激光束从半导体发光元件。半导体光接收元件位于透镜的光轴上，半导体发光元件远离透镜的光轴设置。

2. 发明申请

US20070091952A1 Semiconductor laser apparatus and fabrication method of the same 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20070091952A1
公开(公告)日：2007-04-26
申请号：US11338739
申请日：2006-01-25
申请人： Naotaka Mukoyama , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Yasuaki Kuwata
发明人： Naotaka Mukoyama , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Yasuaki Kuwata
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： B82Y20/00 , H01L2224/48091 , H01L2924/19107 , H01S5/02212 , H01S5/02272 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01L2924/00014
摘要： There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.
摘要翻译：提供半导体激光装置。半导体激光二极管的电极通过管芯连接接合，并且半导体激光二极管的电极预先包括Au和除Au之外的组合芯片的至少一种材料。

3. 发明授权

US07684459B2 Semiconductor laser apparatus and fabrication method of the same 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07684459B2
公开(公告)日：2010-03-23
申请号：US11338739
申请日：2006-01-25
申请人： Naotaka Mukoyama , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Yasuaki Kuwata
发明人： Naotaka Mukoyama , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Yasuaki Kuwata
IPC分类号： H01S3/097
CPC分类号： B82Y20/00 , H01L2224/48091 , H01L2924/19107 , H01S5/02212 , H01S5/02272 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01L2924/00014
摘要： There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.
摘要翻译：提供半导体激光装置。半导体激光二极管的电极通过管芯连接接合，并且半导体激光二极管的电极预先包括Au和除Au之外的组合芯片的至少一种材料。

4. 发明授权

US07502566B2 Light-emitting module 有权
标题翻译：发光模块
公开(公告)号：US07502566B2
公开(公告)日：2009-03-10
申请号：US11319702
申请日：2005-12-29
申请人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Naotaka Mukoyama
发明人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii , Naotaka Mukoyama
IPC分类号： H04B10/12 , H04B10/00
CPC分类号： H04B10/0799 , G02B6/32 , G02B6/4206 , H04B10/114
摘要： A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.
摘要翻译：一种发光模块，其经由透镜输出从半导体发光元件发射的激光束，所述发光模块包括第一主平面，安装半导体发光元件的第一主平面上的安装部，透镜保持部分，其保持透镜，使得透镜的光轴对应于与第一主平面成直角交叉的参考线;半导体光接收元件，接收由所发射的激光束中的透镜反射的激光束从半导体发光元件。半导体光接收元件位于透镜的光轴上，半导体发光元件远离透镜的光轴设置。

5. 发明授权

US07995636B2 Semiconductor laser apparatus and manufacturing method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07995636B2
公开(公告)日：2011-08-09
申请号：US10990373
申请日：2004-11-18
申请人： Akemi Murakami , Hideo Nakayama , Yasuaki Kuwata , Teiichi Suzuki , Ryoji Ishii
发明人： Akemi Murakami , Hideo Nakayama , Yasuaki Kuwata , Teiichi Suzuki , Ryoji Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/1301 , H01S5/0261 , H01S5/06825 , H01S5/18311 , H01S5/2009 , Y10S438/979 , Y10S438/983 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.
摘要翻译：半导体激光装置具有齐纳二极管，该齐纳二极管含有第一导电类型的第一半导体区域和与第一半导体区域连接的第二导电类型的第二半导体区域，以及堆叠在齐纳二极管上的垂直腔表面发射半导体激光二极管二极管，并且至少包含第一导电类型的第一镜层，第二导电类型的第二镜层和夹在第一和第二镜层之间的有源区。第一半导体区域和第二镜像层电连接，并且第二半导体区域和第一镜像层电连接。

6. 发明申请

US20050238076A1 Semiconductor laser apparatus and manufacturing method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20050238076A1
公开(公告)日：2005-10-27
申请号：US10978487
申请日：2004-11-02
申请人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii
发明人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii
IPC分类号： H01S5/026 , H01S5/00 , H01S5/068 , H01S5/183 , H01S5/30
CPC分类号： H01S5/0261 , H01S5/06825 , H01S5/18313 , H01S5/305 , H01S5/3054
摘要： A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.
摘要翻译：半导体激光装置包括基板，垂直腔表面发射半导体激光二极管（VCSEL），分别包括第一和第二导电类型的第一和第二反射镜层，第一和第二反射镜层之间的有源区，分别与第一和第二镜层电连接的第一和第二电极层和分别包括第一和第二导电类型的第一和第二半导体区域的至少一个齐纳二极管以及与第一和第二电极层电连接的第三和第四电极层第一和第二半导体区域。第二半导体区域形成在第一半导体区域的一部分中并与第一半导体区域形成PN结。在衬底上形成VCSEL和齐纳二极管。第一和第二电极层分别与第四和第三电极层电连接。

7. 发明申请

US20050271107A1 Semiconductor laser apparatus and manufacturing method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20050271107A1
公开(公告)日：2005-12-08
申请号：US10990373
申请日：2004-11-18
申请人： Akemi Murakami , Hideo Nakayama , Yasuaki Kuwata , Teiichi Suzuki , Ryoji Ishii
发明人： Akemi Murakami , Hideo Nakayama , Yasuaki Kuwata , Teiichi Suzuki , Ryoji Ishii
IPC分类号： H01S5/183 , H01S5/00 , H01S5/026 , H01S5/068
CPC分类号： H01S5/18341 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/1301 , H01S5/0261 , H01S5/06825 , H01S5/18311 , H01S5/2009 , Y10S438/979 , Y10S438/983 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.
摘要翻译：半导体激光装置具有齐纳二极管，该齐纳二极管含有第一导电类型的第一半导体区域和与第一半导体区域连接的第二导电类型的第二半导体区域，以及堆叠在齐纳二极管上的垂直腔表面发射半导体激光二极管二极管，并且至少包含第一导电类型的第一镜层，第二导电类型的第二镜层和夹在第一和第二镜层之间的有源区。第一半导体区域和第二镜像层电连接，并且第二半导体区域和第一镜像层电连接。

8. 发明授权

US07483464B2 Semiconductor laser apparatus and manufacturing method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07483464B2
公开(公告)日：2009-01-27
申请号：US10978487
申请日：2004-11-02
申请人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii
发明人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/0261 , H01S5/06825 , H01S5/18313 , H01S5/305 , H01S5/3054
摘要： A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.
摘要翻译：半导体激光装置包括基板，垂直腔表面发射半导体激光二极管（VCSEL），分别包括第一和第二导电类型的第一和第二反射镜层，第一和第二反射镜层之间的有源区，分别与第一和第二镜层电连接的第一和第二电极层和分别包括第一和第二导电类型的第一和第二半导体区域的至少一个齐纳二极管以及与第一和第二电极层电连接的第三和第四电极层第一和第二半导体区域。第二半导体区域形成在第一半导体区域的一部分中并与第一半导体区域形成PN结。在衬底上形成VCSEL和齐纳二极管。第一和第二电极层分别与第四和第三电极层电连接。

9. 发明授权

US07700955B2 Semiconductor device and optical apparatus 有权
标题翻译：半导体装置及光学装置
公开(公告)号：US07700955B2
公开(公告)日：2010-04-20
申请号：US11982930
申请日：2007-11-06
申请人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
发明人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
IPC分类号： H01L29/26 , H01L27/15 , H01L29/267 , G02B6/26 , G02B6/36 , H01S5/00 , H01S3/20 , H01S3/08
CPC分类号： H01L27/15 , H01L31/173 , H01L33/38
摘要： A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.
摘要翻译：半导体器件包括衬底，形成在衬底上的半导体层和通过使用半导体层的至少一部分形成的光学功能部分。光学功能部分执行发光或光接收。半导体器件还包括与光学功能部分的表面上的半导体层电连接的第一驱动电极，第一驱动电极驱动光学功能部分。半导体器件还包括封装电极，其形成在半导体层上以围绕光学功能部分的周围，并且电连接到第一驱动电极。

10. 发明申请

US20080224167A1 Semiconductor device and optical apparatus 有权
标题翻译：半导体装置及光学装置
公开(公告)号：US20080224167A1
公开(公告)日：2008-09-18
申请号：US11982930
申请日：2007-11-06
申请人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
发明人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L31/173 , H01L33/38
摘要： A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.
摘要翻译：半导体器件包括衬底，形成在衬底上的半导体层和通过使用半导体层的至少一部分形成的光学功能部分。光学功能部分执行发光或光接收。半导体器件还包括与光学功能部分的表面上的半导体层电连接的第一驱动电极，第一驱动电极驱动光学功能部分。半导体器件还包括封装电极，其形成在半导体层上以围绕光学功能部分的周围，并且电连接到第一驱动电极。

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