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1. 发明授权

US07431158B2 Flexible substrate storage equipment and flexible substrate storing method 有权
标题翻译：柔性基板储存设备和柔性基板储存方法
公开(公告)号：US07431158B2
公开(公告)日：2008-10-07
申请号：US10779693
申请日：2004-02-18
申请人： Kimihiko Yamada , Yoshiki Nakatani , Tetsuya Aita
发明人： Kimihiko Yamada , Yoshiki Nakatani , Tetsuya Aita
IPC分类号： B65D85/48
CPC分类号： H01L21/67383 , B65D25/107
摘要： A flexible substrate storage equipment of the present invention includes at least a pair of opposed members that constitute an outer frame of a storage equipment main body, wherein the pair of opposed members are disposed so as to maintain a predetermined interval to wedge a plurality of flexible substrates in between to hold them in a shape of a curve. As a result, a flexible substrate storage equipment for surely storing and holding a plastic substrate or other flexible substrate with a simple structure, and a storing method of such substrate can be realized.
摘要翻译：本发明的柔性基板储存装置包括构成储存装置主体的外框的至少一对相对的构件，其中一对相对的构件被设置成保持预定间隔以楔住多个柔性衬底之间以将其保持为曲线的形状。结果，可以实现用于可靠地存储和保持具有简单结构的塑料基板或其它柔性基板的柔性基板存储设备以及这种基板的存储方法。

2. 发明申请

US20090039495A1 WIRING SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：接线基板和包括其的显示装置
公开(公告)号：US20090039495A1
公开(公告)日：2009-02-12
申请号：US12089059
申请日：2006-06-13
申请人： Kenichi Yamashita , Yoshiki Nakatani , Tetsuya Aita
发明人： Kenichi Yamashita , Yoshiki Nakatani , Tetsuya Aita
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L24/81 , G02F1/1345 , G02F2202/28 , H01L23/49838 , H01L23/5387 , H01L24/12 , H01L24/17 , H01L24/28 , H01L24/32 , H01L24/83 , H01L2224/10135 , H01L2224/10155 , H01L2224/10165 , H01L2224/13099 , H01L2224/16225 , H01L2224/16238 , H01L2224/26145 , H01L2224/26152 , H01L2224/26175 , H01L2224/27013 , H01L2224/81136 , H01L2224/81139 , H01L2224/8114 , H01L2224/81141 , H01L2224/81191 , H01L2224/81801 , H01L2224/83051 , H01L2224/83139 , H01L2224/8314 , H01L2224/83141 , H01L2224/83385 , H01L2224/83851 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01057 , H01L2924/01058 , H01L2924/01074 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/3511 , H05K3/303 , H05K3/323 , H05K2201/09709 , H05K2201/09909 , H05K2201/10674 , H05K2201/2036 , H05K2203/167 , Y02P70/613 , H01L2224/2919 , H01L2924/00 , H01L2224/29099
摘要： An active matrix substrate includes a first substrate and a driving integrated circuit chip mounted on the first substrate. A support member is provided between the active matrix substrate and the driving IC chip so as to be in contact with both the active matrix substrate and the driving IC chip.
摘要翻译：有源矩阵基板包括安装在第一基板上的第一基板和驱动集成电路芯片。在有源矩阵基板和驱动IC芯片之间设置有与有源矩阵基板和驱动IC芯片接触的支撑部件。

3. 发明授权

US09024311B2 Thin film transistor, method for manufacturing same, active matrix substrate, display panel and display device 有权
标题翻译：薄膜晶体管，制造方法，有源矩阵基板，显示面板和显示装置
公开(公告)号：US09024311B2
公开(公告)日：2015-05-05
申请号：US13379670
申请日：2010-04-06
申请人： Takeshi Hara , Hirohiko Nishiki , Yoshimasa Chikama , Kazuo Nakagawa , Yoshifumi Ohta , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Yoshiyuki Miyajima , Michiko Takei , Yoshiyuki Harumoto , Hinae Mizuno
发明人： Takeshi Hara , Hirohiko Nishiki , Yoshimasa Chikama , Kazuo Nakagawa , Yoshifumi Ohta , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Yoshiyuki Miyajima , Yuuji Mizuno , Michiko Takei , Yoshiyuki Harumoto
IPC分类号： H01L29/786 , H01L21/336 , H01L27/12
CPC分类号： H01L27/1288 , H01L27/1225 , H01L29/7869
摘要： The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.
摘要翻译：本发明提供了一种薄膜晶体管，其包括用于电连接信号电极（6a）和漏电极（7a）的氧化物半导体层（4），所述氧化物半导体层由氧化物半导体制成; 以及由选自Ti，Mo，W，Nb，Ta，Cr，氮化物中的至少一种及其合金制成的阻挡层（6b），阻挡层（6b）与信号电极（6a）和氧化物半导体层（4），并且将信号电极（6a）与氧化物半导体层（4）分离。由于这种结构，薄膜晶体管可以在第一电极和沟道层之间形成并保持欧姆接触，从而成为具有良好性能的薄膜晶体管。

4. 发明授权

US08582072B2 Method for manufacturing display device and display device 有权
标题翻译：制造显示装置和显示装置的方法
公开(公告)号：US08582072B2
公开(公告)日：2013-11-12
申请号：US12933763
申请日：2009-03-03
申请人： Tohru Okabe , Takeshi Hara , Tetsuya Aita , Tsuyoshi Inoue
发明人： Tohru Okabe , Takeshi Hara , Tetsuya Aita , Tsuyoshi Inoue
IPC分类号： G02F1/1333
CPC分类号： B29D11/0073 , B32B37/0015 , B32B37/12 , B32B37/144 , B32B37/28 , B32B38/0008 , B32B43/006 , B32B2037/1253 , B32B2307/538 , B32B2307/734 , B32B2309/02 , B32B2309/027 , B32B2309/10 , B32B2310/0831 , B32B2310/0843 , B32B2315/08 , B32B2457/20 , G02F1/1303 , G02F1/133305 , G02F2201/54
摘要： A method for manufacturing a display device 10 includes a substrate supporting step for supporting a plastic substrate 19 on a support substrate 50, with the plastic substrate 19 curved, and a thin film lamination step for laminating a plurality of thin films on the plastic substrate 19 supported on the support substrate 50.
摘要翻译：制造显示装置10的方法包括：基板支撑步骤，用于将塑料基板19支撑在支撑基板50上，塑料基板19弯曲;以及薄膜层叠步骤，用于在塑料基板19上层叠多个薄膜支撑在支撑基板50上。

5. 发明授权

US09177974B2 Active matrix substrate and liquid crystal display panel including the same, and method for manufacturing active matrix substrate with gate insulating film not provided where auxiliary capacitor is provided 有权
标题翻译：有源矩阵基板和包括该基板的有源矩阵基板和液晶显示面板的制造方法以及不提供辅助电容器的栅极绝缘膜制造有源矩阵基板的方法
公开(公告)号：US09177974B2
公开(公告)日：2015-11-03
申请号：US13501534
申请日：2010-07-26
申请人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Hinae Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
发明人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Yuuiji Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/136 , H01L27/12 , G02F1/1362
CPC分类号： H01L27/1255 , G02F1/136213 , G02F2201/40 , H01L27/1225 , H01L27/124 , H01L27/1248
摘要： An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines (11b) extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (5), one for each of the pixels, a protective film (16a) covering the TFTs (5), a plurality of pixel electrodes (18a) arranged in a matrix on the protective film (16a) and connected to the respective corresponding TFTs (5), and a plurality of auxiliary capacitors (6), one for each of the pixels. Each of the auxiliary capacitors (6) includes the corresponding capacitor line (11b), the corresponding pixel electrode (18a), and the protective film (16a) between the corresponding capacitor line (11b) and the corresponding pixel electrode (18a).
摘要翻译：有源矩阵基板包括以矩阵形式布置的多个像素，多个电容线（11b），其中像素彼此排列并且彼此平行的方向中的一个方向延伸;多个TFT（5），一个用于每个像素，覆盖TFT（5）的保护膜（16a），在保护膜（16a）上以矩阵布置并连接到相应的TFT（5）的多个像素电极（18a）和多个辅助电容器（6），每个像素一个。每个辅助电容器（6）包括相应的电容器线（11b），对应的像素电极（18a）和相应的电容器线（11b）和相应的像素电极（18a）之间的保护膜（16a）。

6. 发明授权

US08823002B2 Method for manufacturing semiconductor device, semiconductor device, and display device 有权
标题翻译：半导体器件，半导体器件和显示器件的制造方法
公开(公告)号：US08823002B2
公开(公告)日：2014-09-02
申请号：US13510315
申请日：2010-08-23
申请人： Michiko Takei , Tohru Okabe , Tetsuya Aita , Tsuyoshi Inoue , Yoshiyuki Harumoto , Takeshi Yaneda
发明人： Michiko Takei , Tohru Okabe , Tetsuya Aita , Tsuyoshi Inoue , Yoshiyuki Harumoto , Takeshi Yaneda
IPC分类号： H01L31/036 , H01L21/268 , H01L27/12 , H01L29/66 , H01L29/786 , H01L29/04
CPC分类号： H01L21/268 , H01L27/1229 , H01L27/1285 , H01L29/04 , H01L29/66765 , H01L29/78678
摘要： An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer (34) with energy, thereby obtaining a microcrystalline silicon layer; and forming a doped semiconductor layer (35) on the amorphous silicon layer (34). In the step of irradiating, the amorphous silicon layer (34) is irradiated with energy that has a first quantity, thereby forming a first microcrystalline silicon layer (34A) including a channel layer for a first TFT (30A), and is also irradiated with energy that has a second quantity, which is larger than the first quantity, thereby forming a second microcrystalline silicon layer (34B) including a channel layer for a second TFT (30B).
摘要翻译：本发明的目的是提供一种半导体器件，其中具有高迁移率的TFT被布置在显示器和外围电路区域中。根据本发明的半导体器件制造方法包括以下步骤：用能量照射非晶硅层（34），从而获得微晶硅层; 以及在所述非晶硅层（34）上形成掺杂半导体层（35）。在照射步骤中，用具有第一量的能量照射非晶硅层（34），由此形成包括用于第一TFT（30A）的沟道层的第一微晶硅层（34A），并且还用具有大于第一量的第二量的能量，由此形成包括用于第二TFT（30B）的沟道层的第二微晶硅层（34B）。

7. 发明授权

US08441016B2 Thin-film transistor, display device, and manufacturing method for thin-film transistors 有权
标题翻译：薄膜晶体管，显示装置和薄膜晶体管的制造方法
公开(公告)号：US08441016B2
公开(公告)日：2013-05-14
申请号：US13383077
申请日：2010-07-08
申请人： Tsuyoshi Inoue , Tohru Okabe , Tetsuya Aita , Michiko Takei , Yoshiyuki Harumoto , Takeshi Yaneda
发明人： Tsuyoshi Inoue , Tohru Okabe , Tetsuya Aita , Michiko Takei , Yoshiyuki Harumoto , Takeshi Yaneda
IPC分类号： H01L33/08
CPC分类号： H01L29/78627 , G02F1/1368 , G02F2202/104 , H01L29/41733 , H01L29/66765 , H01L29/78624
摘要： Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer (34) that contains a channel region (34C) having a microcrystalline semiconductor; source and drain contact layers (35S and 35D) that contains impurities; a first source metal layer (36S) and a first drain metal layer (36D), and a second source metal layer (37S) and a second drain metal layer (37D). The end portion of the second metal source layer (37S) is located at a position receded from the end portion of the first metal source layer (36S) and the end portion of the second drain metal layer (37D) is located at a position receded from the end portion of the first drain metal layer (36D). The semiconductor layer (34) contains low concentration impurity diffusion regions formed near the end portions of the aforementioned source contact layer (35S) and drain contact layer (35D).
摘要翻译：公开了一种其中泄漏电流最小化的高品质，高效制造的薄膜晶体管。薄膜晶体管设置有包含具有微晶半导体的沟道区（34C）的半导体层（34）源极和漏极接触层（35S和35D），其含有杂质; 第一源极金属层（36S）和第一漏极金属层（36D）以及第二源极金属层（37S）和第二漏极金属层（37D）。第二金属源层（37S）的端部位于从第一金属源层（36S）的端部退出的位置，第二漏极金属层（37D）的端部位于退出的位置从第一漏极金属层（36D）的端部开始。半导体层（34）包含在上述源极接触层（35S）和漏极接触层（35D）的端部附近形成的低浓度杂质扩散区域。

8. 发明申请

US20120001190A1 THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120001190A1
公开(公告)日：2012-01-05
申请号：US13259154
申请日：2010-02-09
申请人： Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Yoshiyuki Harumoto
发明人： Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Yoshiyuki Harumoto
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02532 , H01L21/02678 , H01L27/1285 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： The invention provides a thin film transistor that can improve its operating speed by improving crystallinity near a bottom surface of a channel layer. Of laser light irradiated onto an amorphous silicon layer, light transmitted through the amorphous silicon layer is absorbed by a gate electrode 130 and thereby produces heat. Since the gate electrode 130 is made of a titanium layer 102 with a low thermal conductivity, the produced heat is less likely to be transmitted through a gate wiring line 110 and dissipated and thus increases the temperature of the gate electrode 130. Radiant heat from the gate electrode 130 is provided to a bottom surface of the amorphous silicon layer and thus the amorphous silicon layer is also heated from its bottom surface. As a result, an amorphous silicon layer 106a melts not only from its top surface but also from its bottom surface and is solidified, whereby crystallization proceeds, and thus, the amorphous silicon layer 106a turns into a polycrystalline silicon layer 106b. Hence, the mobility near a bottom surface of the polycrystalline silicon layer 106b also increases, improving the operating speed of a thin film transistor 100.
摘要翻译：本发明提供一种薄膜晶体管，其可以通过改善沟道层底表面附近的结晶度来提高其工作速度。照射到非晶硅层上的激光，透过非晶硅层的光被栅电极130吸收，从而产生热量。由于栅电极130由具有低热导率的钛层102制成，所产生的热不太可能通过栅极布线110透射并消散，因此增加了栅电极130的温度。来自栅电极130被提供到非晶硅层的底表面，因此非晶硅层也从其底表面加热。结果，非晶硅层106a不仅从其顶表面而且从其底表面熔化并且固化，从而进行结晶，因此非晶硅层106a变成多晶硅层106b。因此，多晶硅层106b的底表面附近的迁移率也增加，提高了薄膜晶体管100的工作速度。

9. 发明授权

US09087749B2 Active matrix substrate, and display panel 有权
标题翻译：有源矩阵基板和显示面板
公开(公告)号：US09087749B2
公开(公告)日：2015-07-21
申请号：US13976056
申请日：2011-12-20
申请人： Takeshi Hara , Hirohiko Nishiki , Hisao Ochi , Tetsuya Aita , Tohru Okabe , Yuya Nakano
发明人： Takeshi Hara , Hirohiko Nishiki , Hisao Ochi , Tetsuya Aita , Tohru Okabe , Yuya Nakano
IPC分类号： H01L29/12 , H01L27/12 , H01L29/49 , H01L29/786 , G02F1/1362 , G02F1/1368 , H01L29/45
CPC分类号： H01L27/1248 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , H01L27/124 , H01L27/1296 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An active matrix substrate (20a) includes a gate electrode (25) formed on an insulating substrate (10a), and a planarizing film (26) formed on the gate electrode (25) and made of a baked SOG material. The gate electrode (25) is a multilayer film including a first conductive film (27) formed on the insulating substrate (10a) and made of a metal except copper, a second conductive film (28) formed on the first conductive film (27) and made of copper, and a third conductive film (29) formed on the second conductive film (28) and made of the metal except copper.
摘要翻译：有源矩阵基板（20a）包括形成在绝缘基板（10a）上的栅极（25）和形成在栅电极（25）上并由焙烧的SOG材料制成的平坦化膜（26）。栅电极（25）是包括形成在绝缘基板（10a）上的由铜以外的金属制成的第一导电膜（27）的多层膜，形成在第一导电膜（27）上的第二导电膜（28）并由铜制成，第三导电膜（29）形成在第二导电膜（28）上，并由除铜以外的金属制成。

10. 发明授权

US08685803B2 Semiconductor device and method for producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08685803B2
公开(公告)日：2014-04-01
申请号：US13514081
申请日：2010-12-03
申请人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto , Hinae Mizuno
发明人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Yuuji Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , G02F1/13458 , G02F1/136213 , H01L27/124 , H01L27/1244 , H01L27/1248
摘要： A semiconductor device includes: a thin film transistor having a gate line (3a), a first insulating film (5), an island-shaped oxide semiconductor layer (7a), a second insulating film (9), a source line (13as), a drain electrode (13ad), and a passivation film; and a terminal portion having a first connecting portion (3c) made of the same conductive film as the gate line, a second connecting portion (13c) made of the same conductive film as the source line and the drain electrode, and a third connecting portion (19c) formed on the second connecting portion. The second connecting portion is in contact with the first connecting portion within a first opening (11c) provided in the first and second insulating films; the third connecting portion (19c) is in contact with the second connecting portion within a second opening (17c) provided in the passivation film; and the second connecting portion (13c) covers end faces of the first and second insulating films within the first opening (11c), but does not cover an end face of the passivation film (15) within the second opening (17c). As a result, the taper shape of a contact hole of the terminal portion can be controlled with a high precision.
摘要翻译：半导体器件包括：具有栅极线（3a），第一绝缘膜（5），岛状氧化物半导体层（7a），第二绝缘膜（9），源极线（13as））的薄膜晶体管，，漏电极（13ad）和钝化膜; 以及具有由与栅极线相同的导电膜制成的第一连接部分（3c）的端子部分，由与源极线和漏极电极相同的导电膜制成的第二连接部分（13c）和第三连接部分（19c）形成在第二连接部分上。第二连接部分在设置在第一和第二绝缘膜中的第一开口（11c）内与第一连接部分接触; 所述第三连接部分（19c）在设置在所述钝化膜中的第二开口（17c）内与所述第二连接部分接触; 并且所述第二连接部分（13c）覆盖所述第一开口（11c）内的所述第一绝缘膜和所述第二绝缘膜的端面，但不覆盖所述第二开口（17c）内的所述钝化膜（15）的端面。结果，可以高精度地控制端子部分的接触孔的锥形形状。

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